IV-VI compounds are considered as promising thermoelectric materials, and high thermoelectric performance was achieved in IV-VI solid solutions. In this work, the thermoelectric properties of Pb-Sn-Te-Se-based solid s...IV-VI compounds are considered as promising thermoelectric materials, and high thermoelectric performance was achieved in IV-VI solid solutions. In this work, the thermoelectric properties of Pb-Sn-Te-Se-based solid solutions were systematically investigated. Among these solid solutions, it is found that a figure of merit （ZT） peak value of 1.0 at 873 K can be obtained in （PbTe）0.5（SnTe）o.5, on account of the combination of superior electrical properties in SnTe and low thermal conductivity in PbTe. Furthermore, we investigated and summarized the thermoelectric transport properties and proposed the thermoelectric performance maps for the IV- VI solid solutions in Pb-Sn-Te-Se system. This comprehensive investigation on Pb-Sn-Te-Se-based solid solutions can effectively guide and scan thermoelectric performance for a given unknown composition and enhance the thermoelectric properties in IV-VI compounds.展开更多
This study investigates the effect of interfacial electric field redistribution caused by interfacial metal phase transition on the performance of Te-Se alloy-based shortwave infrared photodiode under high interfacial...This study investigates the effect of interfacial electric field redistribution caused by interfacial metal phase transition on the performance of Te-Se alloy-based shortwave infrared photodiode under high interfacial stress conditions.Microscopic analysis of the Te_(0.6)Se_(0.4)/ZnO interface reveals that stress at the boundary induces the diffusion of Se atoms into the ZnO region,leading to the formation of a new Te-rich metallic phase of Te_(0.75)Se_(0.25).This metallic phase would significantly impede carrier migration and negatively impact the photoelectric performance of the device.The incorporation of a TeO_(2) modified layer would reduce interface stress,and avoid the formation of the metallic phase,which notably reduces dark current and enhances quantum efficiency.This study explores how interfacial stress influences the structure–property relationship of TeSe/ZnO heterojunctions,offering a novel approach to optimizing interface engineering for Te-based infrared detectors.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos. 51671015. 51571007 and 51772012)the 111 project (No. B17002)+1 种基金the Beijing Municipal Science and Technology Commission (No. 2171100002017002)the Shenzhen Peacock Plan Team (No. KQTD2016022619565991)
文摘IV-VI compounds are considered as promising thermoelectric materials, and high thermoelectric performance was achieved in IV-VI solid solutions. In this work, the thermoelectric properties of Pb-Sn-Te-Se-based solid solutions were systematically investigated. Among these solid solutions, it is found that a figure of merit （ZT） peak value of 1.0 at 873 K can be obtained in （PbTe）0.5（SnTe）o.5, on account of the combination of superior electrical properties in SnTe and low thermal conductivity in PbTe. Furthermore, we investigated and summarized the thermoelectric transport properties and proposed the thermoelectric performance maps for the IV- VI solid solutions in Pb-Sn-Te-Se system. This comprehensive investigation on Pb-Sn-Te-Se-based solid solutions can effectively guide and scan thermoelectric performance for a given unknown composition and enhance the thermoelectric properties in IV-VI compounds.
基金supported by the National Key Research and Development Program of China(Nos.2022YFA1204800,2023YFB360890,and 2021YFA0715502)supported by the National Natural Science Foundation of China(No.62174064)the Innovation Project of Optics Valley Laboratory(No.OVL2023ZD002).
文摘This study investigates the effect of interfacial electric field redistribution caused by interfacial metal phase transition on the performance of Te-Se alloy-based shortwave infrared photodiode under high interfacial stress conditions.Microscopic analysis of the Te_(0.6)Se_(0.4)/ZnO interface reveals that stress at the boundary induces the diffusion of Se atoms into the ZnO region,leading to the formation of a new Te-rich metallic phase of Te_(0.75)Se_(0.25).This metallic phase would significantly impede carrier migration and negatively impact the photoelectric performance of the device.The incorporation of a TeO_(2) modified layer would reduce interface stress,and avoid the formation of the metallic phase,which notably reduces dark current and enhances quantum efficiency.This study explores how interfacial stress influences the structure–property relationship of TeSe/ZnO heterojunctions,offering a novel approach to optimizing interface engineering for Te-based infrared detectors.
