期刊文献+
共找到10篇文章
< 1 >
每页显示 20 50 100
基于椭圆偏振光谱线法研究温度对NiMn_(2)O_(4)薄膜光电性能的影响
1
作者 胡轶 李子建 刘磊 《材料科学与工程学报》 北大核心 2025年第3期486-492,共7页
采用磁控溅射法在Si(100)衬底上制备NiMn_(2)O_(4)薄膜。利用X射线衍射仪、扫描电子显微镜、原子力显微镜对薄膜微观结构和表面粗糙度进行表征,采用椭圆偏振光谱法,在300~850 nm波段内研究NiMn_(2)O_(4)薄膜。考察20~220℃温度下薄膜的... 采用磁控溅射法在Si(100)衬底上制备NiMn_(2)O_(4)薄膜。利用X射线衍射仪、扫描电子显微镜、原子力显微镜对薄膜微观结构和表面粗糙度进行表征,采用椭圆偏振光谱法,在300~850 nm波段内研究NiMn_(2)O_(4)薄膜。考察20~220℃温度下薄膜的光学特性,采用Tauc-Lorentz色散函数研究NiMn_(2)O_(4)薄膜的折射率、消光系数以及材料光学特性随温度的变化规律,并通过复介电函数虚部同变温XPS进一步证明,温度引起NiMn_(2)O_(4)薄膜材料光学特性变化的原因是源于材料内部Mn^(3+)/Mn^(4+)浓度比的变化。 展开更多
关键词 椭圆偏振光谱法 NiMn_(2)O_(4)薄膜 tauc-Lorentz色散函数
在线阅读 下载PDF
Optical Spectroscopy Methods for Determining Semiconductor Bandgaps
2
作者 ZHANG Yong 《发光学报》 北大核心 2025年第7期1271-1282,共12页
Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic a... Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot. 展开更多
关键词 semiconductor material bandgap excitonic absorption modulation spectroscopy tauc plot
在线阅读 下载PDF
非晶氧化铝薄膜结构及其不同色散模型光谱椭偏对比研究 被引量:1
3
作者 石树正 马宏 +1 位作者 王占英 庞永俊 《燕山大学学报》 CAS 北大核心 2024年第3期265-273,共9页
针对非晶态氧化铝纳米薄膜材料性能预测难度较大的问题,本文提出一种基于光谱椭偏技术的不同色散模型对比分析方法,用于测算纳米薄膜的结构和光电特性。通过建立Tauc-Lorentz和Forouhi-Bloomer色散模型,系统地研究了原子层沉积技术制备... 针对非晶态氧化铝纳米薄膜材料性能预测难度较大的问题,本文提出一种基于光谱椭偏技术的不同色散模型对比分析方法,用于测算纳米薄膜的结构和光电特性。通过建立Tauc-Lorentz和Forouhi-Bloomer色散模型,系统地研究了原子层沉积技术制备的氧化铝薄膜的物相结构、微观形貌和光电特性。结果表明,该薄膜具有无定型结构,表面光滑无裂纹。不同模型获得的结构参数及光电常数并不一致,Forouhi-Bloomer模型得到薄膜厚度与扫描电子显微镜测量的结果更接近,而Tauc-Lorentz模型的粗糙度更符合原子力显微镜测试结果。Tauc-Lorentz模型提取的带隙结果与Tauc法外推出的禁带宽度均保持在3 eV左右。根据分析发现,结构参数的差异主要是由于模型间数学处理方式和参数描述差异导致的,光电参数的不同主要源于模型推导过程中假设条件和收敛特性的差异。 展开更多
关键词 非晶氧化铝 原子层沉积 光谱椭偏 tauc-Lorentz模型 Forouhi-Bloomer模型
在线阅读 下载PDF
TiAlON系薄膜材料的椭偏研究
4
作者 刘文德 陈赤 +4 位作者 杜淼 郝雷 徐英莹 樊其明 张静 《应用光学》 CAS CSCD 北大核心 2011年第6期1202-1205,共4页
对新型太阳能用薄膜材料TiAlON材料进行了椭偏研究。采用Cauchy,Lorentz和Tauc Lorentz模型对绝缘性TiAlON薄膜的椭偏测量结果进行了模拟,得到了薄膜的光学常数。通过比较色散模型及薄膜结构在不同波段的应用情况,说明Tauc Lorentz模型... 对新型太阳能用薄膜材料TiAlON材料进行了椭偏研究。采用Cauchy,Lorentz和Tauc Lorentz模型对绝缘性TiAlON薄膜的椭偏测量结果进行了模拟,得到了薄膜的光学常数。通过比较色散模型及薄膜结构在不同波段的应用情况,说明Tauc Lorentz模型更适合于从紫外到近红外宽光谱的拟合。结果表明光谱椭偏术可以作为表征TiAlON材料系的可靠手段,是进一步表征多层膜系光学性质的基础。 展开更多
关键词 TiAlON薄膜 光谱椭偏术 Lorentz模型 Cauchy模型 tauc-Lorentz模型
在线阅读 下载PDF
脉冲反应磁控溅射氧化钒薄膜的光谱椭偏研究
5
作者 董翔 吴志明 +3 位作者 许向东 于贺 顾德恩 蒋亚东 《半导体光电》 CAS 北大核心 2015年第2期220-225,共6页
采用脉冲直流反应磁控溅射技术在不同的占空比条件下制备了氧化钒薄膜。利用X射线光电子能谱仪测定了薄膜的组分,用光谱椭偏仪在300~850nm的波长范围内对薄膜的光学性质进行了研究。实验结果表明降低占空比具有促进金属钒氧化的作用,而... 采用脉冲直流反应磁控溅射技术在不同的占空比条件下制备了氧化钒薄膜。利用X射线光电子能谱仪测定了薄膜的组分,用光谱椭偏仪在300~850nm的波长范围内对薄膜的光学性质进行了研究。实验结果表明降低占空比具有促进金属钒氧化的作用,而通过采用TaucLorentz谐振子色散模型结合有效介质近似模型对椭偏参数Ψ和Δ进行拟合,得到了较为理想的拟合结果。薄膜的复折射率和透过率均由椭偏拟合结果确定,结果发现占空比的下降,导致了可见光范围内薄膜折射率和消光系数的降低以及透过率的提高。 展开更多
关键词 氧化钒薄膜 光谱椭偏 脉冲直流反应磁控溅射 占空比 tauc-Lorentz模型
原文传递
Electrical and optical properties of lithium borate glasses doped with Nd_2O_3 被引量:4
6
作者 R.S. Gedam D.D. Ramteke 《Journal of Rare Earths》 SCIE EI CAS CSCD 2012年第8期785-789,共5页
Glass series with general formula 25Li2O-(75-x)B2O3-xNd2O3 was prepared by conventional melt quench technique. Electrical and optical characterizations of these glasses were carried out. It was observed that conduct... Glass series with general formula 25Li2O-(75-x)B2O3-xNd2O3 was prepared by conventional melt quench technique. Electrical and optical characterizations of these glasses were carried out. It was observed that conductivity of glasses decreased and activation energy in- creased with the addition of Nd2O3. The density and refractive index of the glasses increased while optical band gap and radiation length de- creased due to structural changes. 展开更多
关键词 CONDUCTIVITY density refractive index optical absorption tauc's plot rare earths
原文传递
Junction properties and conduction mechanism of new terbium complexes with triethylene glycol ligand for potential application in organic electronic device 被引量:2
7
作者 N.K.Za’aba M.A.Mohd Sarjidan +2 位作者 W.H.Abd.Majid Eny Kusrini Muhammad I.Saleh 《Journal of Rare Earths》 SCIE EI CAS CSCD 2014年第7期633-640,共8页
Terbium-picrate triethylene glycol(EO3-Tb-Pic) complex was prepared in thin film and single layer device structure of ITO/EO3-Tb-Pic/Al, using spin coating technique. The UV-Vis absorption spectroscopy analysis was ... Terbium-picrate triethylene glycol(EO3-Tb-Pic) complex was prepared in thin film and single layer device structure of ITO/EO3-Tb-Pic/Al, using spin coating technique. The UV-Vis absorption spectroscopy analysis was performed to evaluate the electronic molecular transition of the complex. The optical band gap, Eg estimated from the Tauc model revealed that EO3-Tb-Pic thin film exhibited a direct transition with Eg of 2.70 eV. The electronic parameters of the ITO/EO3-Tb-Pic/Al device such as the ideality factor n, barrier height Φb, saturation current Io, and series resistance Rs, were extracted from the conventional lnI-V, Cheung's functions and Norde's method. It was found that the evaluated parameters calculated from Norde's and Cheung's methods were consistent with those calculated from the conventional I-V method. In the double logarithmic I-V plot, three distinct regions based on the slope were identified, and the conduction mechanisms were discussed and explained. The mobility, μ value was estimated from SCLC region as 2.58×10^–7 cm2/(V·s). This newly obtained lanthanide complex may be potentially utilized in electronic devices. 展开更多
关键词 terbium-picrate complex triethylene glycol tauc model optical band gap CURRENT-VOLTAGE rare earths
原文传递
含氢DLC膜的疏水性研究 被引量:1
8
作者 魏晓丽 张玲 +1 位作者 陈厦平 王辅明 《表面技术》 EI CAS CSCD 北大核心 2016年第5期154-161,共8页
目的通过疏水性质的研究,证明源电极式和浸入式PECVD方法制备含氢DLC膜存在结构和性质上的差别,并且证明浸入式PECVD方法制备的含氢DLC膜更适于需要强疏水性的表面改性应用。方法在PECVD腔体中通入甲烷和氢气混合气体,同时在面对源电极... 目的通过疏水性质的研究,证明源电极式和浸入式PECVD方法制备含氢DLC膜存在结构和性质上的差别,并且证明浸入式PECVD方法制备的含氢DLC膜更适于需要强疏水性的表面改性应用。方法在PECVD腔体中通入甲烷和氢气混合气体,同时在面对源电极的绝缘样品架上放置石英基片并沉积类聚合物DLC膜;在源电极上放置石英基片并沉积常规含氢DLC膜。在PECVD腔体中通入乙炔、氢气和四氟化碳混合气体,在面对源电极的绝缘样品架上放置石英基片并沉积掺氟DLC膜。改变气体压强和射频功率,生长一系列含氢DLC膜。利用紫外可见近红外光度计测试DLC膜的透射谱,扫描电子显微镜及原子力显微镜测试其表面形貌。利用接触角测量仪测试两种含氢DLC和一种掺氟DLC膜表面与水、甘油、乙二醇的接触角,并计算其表面能。比较两种含氢DLC膜接触角和表面能的差别,并根据类聚合物DLC膜的微观结构分析可能的原因。比较掺氟和不掺氟DLC膜的接触角并讨论比较结果。结果类聚合物DLC膜的接触角和表面能与具有相同光学带隙的常规含氢DLC膜存在明显差异。类聚合物DLC膜的接触角更大,表面能更低,因而具有更强的疏水性。类聚合物和常规含氢DLC膜与蒸馏水的接触角最大分别为91.2°和79.2°。类聚合物DLC膜中的碳原子具有更高的氢化率,可能是它表面能低和疏水性好的原因。掺氟DLC膜的接触角比具有相同带隙的类聚合物和常规含氢DLC膜都低,这与文献报道的掺氟能提高接触角的现象完全相反。结论类聚合物DLC膜的疏水性更强。结合其更小的内应力、更宽的光学带隙范围和更快的生长速度等特征,使它在医疗、光学保护涂层等领域具有更强的应用性。浸入式PECVD方法生长的掺氟DLC膜不但未提高反而降低了DLC膜的疏水性,需要更多的研究来揭示其中的原因。 展开更多
关键词 类金刚石 PECVD 含氢 掺氟 带隙 接触角 疏水性
在线阅读 下载PDF
The Signatures of Acid Concentration on the Optical Band Gap and Associated Band Tails of Chitosan from Shrimp for Application in Optoelectronic Devices
9
作者 Edwin Atego John O. Agumba Godfrey O. Barasa 《Advances in Chemical Engineering and Science》 2022年第1期1-12,共12页
Over the recent years, the global increase of electronic wastes from electrical and electronic devices (e-wastes) has been on an alarming trend in quantity and toxicity and e-waste<span style="font-family:Verd... Over the recent years, the global increase of electronic wastes from electrical and electronic devices (e-wastes) has been on an alarming trend in quantity and toxicity and e-waste<span style="font-family:Verdana;">s</span><span style="font-family:""><span style="font-family:Verdana;"> are non-biodegradable resulting in its cumulative increase over time. Changes in technology and unrestricted regional movement of electrical devices have facilitated the generation of more e-wastes leading to high levels of air, soil and water pollution. To address these challenges, biodegradable organic components such as chitosan have been used to replace their inorganic counterparts for optoelectronic device applications. However, in-depth knowledge on how such materials can be used to tune the optical properties of their hybrid semiconductors is unrivaled. Thus, systematic studies of the interplay between the preparation methods and optical </span><span style="font-family:Verdana;">band gap and Urbach energy of such organic components are vital. This study has thus been dedicated to map out the effect of acid concentrations</span><span style="font-family:Verdana;"> during chitosan extraction on the corresponding optical band gap and Urbach energy with a view to improving its applications in optoelectronic devices. The,</span></span><span style="font-family:""> </span><span style="font-family:Verdana;">1.0 to 2.5 molar hydrochloric acid (HCl) was used for 12 hours at room temperature during demineralization and 2.0 molar sodium hydroxide (NaOH) during deprotonation processes. The absorbance spectrum of the samples was collected by UV-Vis spectrophotometer and band gap energies were analyzed by performing Tauc’s plot. This study revealed that the energy band gap of chitosan extracted from 1 M HCl, 1.5 M HCl, 2.0 M HCl and 2.5 M HCl were 3.72 eV, 3.50 eV</span><span style="font-family:Verdana;">,</span><span style="font-family:Verdana;"> 3.45 eV and 3.36 eV respectively. Furthermore, the Urbach energy of chitosan extracted from 1 M HCl, 1.5 M HCl, 2.0 M HCl and 2.5 M HCl were 0.60496 eV, 0.5292 eV, 4724 eV and 0.2257 eV, respectively.</span> 展开更多
关键词 Chitosa Optical Band Gap Urbach Energy Absorbance Spectrum tauc Plot
在线阅读 下载PDF
氢化非晶硅薄膜的光谱椭偏研究 被引量:3
10
作者 何剑 李伟 +3 位作者 徐睿 郭安然 祁康成 蒋亚东 《光学学报》 EI CAS CSCD 北大核心 2013年第10期293-300,共8页
氢化非晶硅(a-Si…H)薄膜在微电子和光电子工业中有着重要的应用,而椭偏分析技术是一种重要的薄膜表征手段。利用椭偏测量技术并采用Tauc-Lorentz(TL)模型和Forouhi-Bloomer(FB)模型,从不同角度对比研究了a-Si…H薄膜的结构和光学特性... 氢化非晶硅(a-Si…H)薄膜在微电子和光电子工业中有着重要的应用,而椭偏分析技术是一种重要的薄膜表征手段。利用椭偏测量技术并采用Tauc-Lorentz(TL)模型和Forouhi-Bloomer(FB)模型,从不同角度对比研究了a-Si…H薄膜的结构和光学特性。分析结果表明,用两种不同模型得到的a-Si…H薄膜厚度、粗糙层厚度以及光学常数并不一致,由TL模型得到的薄膜厚度更接近扫描电镜(SEM)测量的结果,粗糙层厚度更接近原子力显微镜(AFM)测量结果对应的经验值。结合已发表的文献,分析发现膜厚差异主要来自于模型对薄膜光学参数的不同描述,而光学参数的差异是由于模型推导过程中的不同假设和数学处理产生的。 展开更多
关键词 薄膜 椭偏分析 tauc—Lorentz模型 Forouhi—Bloomer模型
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部