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Microstructure and corrosion resistance of vanadium films deposited at different target-substrate distance by HPPMS 被引量:2
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作者 Chun-Wei Li Xiu-Bo Tian +2 位作者 Tian-Wei Liu Jian-Wei Qin Chun-Zhi Gong 《Rare Metals》 SCIE EI CAS CSCD 2014年第5期587-593,共7页
High power pulsed magnetron sputtering(HPPMS), a novel physical vapor deposition technology, was applied to prepare vanadium films on aluminum alloy substrate in this paper. The influence of target–substrate dista... High power pulsed magnetron sputtering(HPPMS), a novel physical vapor deposition technology, was applied to prepare vanadium films on aluminum alloy substrate in this paper. The influence of target–substrate distance(Dt–s)(ranging from 8 to 20 cm) on phase structure, surface morphology, deposition rate, and corrosion resistance of vanadium films was investigated. The results show that the vanadium films are textured with a preferential orientation in the(111) direction except for that fabricated at 20 cm. With Dt–sincreasing, the intensity of(111) diffraction peak of the films decreases and there exists a proper distance leading to the minimum surface roughness of 0.65 nm. The deposition rate decreases with Dt–sincreasing. All the V-coated aluminum samples possess better corrosion resistance than the control sample. The sample fabricated at Dt–sof 12 cm demonstrates the best corrosion resistance with the corrosion potential increasing by 0.19 V and the corrosion current decreasing by an order of magnitude compared with that of the substrate. The samples gain further improvement in corrosion resistance after annealing, and if compared with that of annealed aluminum alloy, then the corrosion potential of the sample fabricated at 20 cm increases by 0.415 V and the corrosion current decreases by two orders of magnitude after annealed at 200 °C. If the annealing temperature further rises to 300 °C, then the corrosion resistance of samples increases less obviously than that of the control sample. 展开更多
关键词 High power pulsed magnetron sputtering Vanadium films targetsubstrate distance MICROSTRUCTURE Corrosion resistance
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Influence of the distance between target and substrate on the properties of transparent conducting Al-Zr co-doped zinc oxide thin films 被引量:4
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作者 张化福 刘汉法 +1 位作者 周爱萍 袁长坤 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第11期17-20,共4页
Highly transparent and conducting Al-Zr co-doped zinc oxide (ZAZO) thin films were successfully prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. The distance between tar... Highly transparent and conducting Al-Zr co-doped zinc oxide (ZAZO) thin films were successfully prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. The distance between target and substrate was varied from 45 to 70 mm. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 70 to 50 mm. However, as the distance decreases further, the crystallinity decreases and the electrical resistivity increases. When the distance between target and substrate is 50 ram, it is found that the lowest resistivity is 6.9 × 10^-4Ω cm. All the deposited films show a high average transmittance of above 92% in the visible range. 展开更多
关键词 Al-Zr co-doped zinc oxide films transparent conducting films magnetron sputtering distance between target and substrate
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