Nanocrystalline alloy wlth graln size of about 10～20nm was prepared by mechanlcal alloying of elemen- tal powders in an imnliscible Ta-Cu system, The structure changes of Ta_70Cu_30 during mechanical alloying were mo...Nanocrystalline alloy wlth graln size of about 10～20nm was prepared by mechanlcal alloying of elemen- tal powders in an imnliscible Ta-Cu system, The structure changes of Ta_70Cu_30 during mechanical alloying were monitored by X-ray diffraction. scanning electron microscopy and transmission electron microscopy. High-energy ball milling can efficiently reduce the grain size and considerably increase the Cu solubility in Ta. The significant enhancement of hardness of alloyed powders was also observed.展开更多
在阻挡层化学机械抛光(CMP)过程中,阻挡层材料钽(Ta)易与铜(Cu)发生电偶腐蚀。针对这一问题,通过电化学分析方法研究了碱性抛光液中非离子表面活性剂对铜钽腐蚀电位的影响;通过CMP实验研究了非离子表面活性剂对铜钽去除速率的影响。结...在阻挡层化学机械抛光(CMP)过程中,阻挡层材料钽(Ta)易与铜(Cu)发生电偶腐蚀。针对这一问题,通过电化学分析方法研究了碱性抛光液中非离子表面活性剂对铜钽腐蚀电位的影响;通过CMP实验研究了非离子表面活性剂对铜钽去除速率的影响。结果表明,随着非离子表面活性剂体积分数增加至9%,铜钽的腐蚀电位均降低。最终确定最佳非离子表面活性剂的体积分数为6%。此时,在静态条件下,铜钽电极之间的电位差为1 m V;在动态条件下,铜钽电极之间的电位差为40 m V,可极大地减弱铜钽电偶腐蚀。同时,铜钽的去除速率分别为47 nm·min-1和39 nm·min-1,铜钽去除速率选择比满足阻挡层CMP要求。展开更多
超大规模集成电路Cu互连中的核心技术之一是制备性能优异的扩散阻挡层。本文采用直流磁控反应溅射在N2/Ar气氛中制备了不同组分比的Ta-N薄膜,并原位制备了Cu/Ta-N/基底复合结构,对部分样品在N2保护下进行了快速热处理(RTA),采用台阶仪...超大规模集成电路Cu互连中的核心技术之一是制备性能优异的扩散阻挡层。本文采用直流磁控反应溅射在N2/Ar气氛中制备了不同组分比的Ta-N薄膜,并原位制备了Cu/Ta-N/基底复合结构,对部分样品在N2保护下进行了快速热处理(RTA),采用台阶仪、四探针测试仪、原子力显微镜(AFM)、扫描电镜、X射线衍射(XRD)对薄膜形貌结构进行了表征。结果表明,随着N2流量比的增加,薄膜沉积速率下降,表面趋于平滑,Ta-N薄膜热稳定性能及阻挡性能随之提高,而电阻率则上升。氮流量比为0.3制备的厚度为100nm的Ta-N薄膜经600℃/5m in RTA后,仍可保持对Cu的有效阻挡;在更高温度下退火,Cu将穿过阻挡层与Si发生反应,导致阻挡层失效。展开更多
文摘Nanocrystalline alloy wlth graln size of about 10～20nm was prepared by mechanlcal alloying of elemen- tal powders in an imnliscible Ta-Cu system, The structure changes of Ta_70Cu_30 during mechanical alloying were monitored by X-ray diffraction. scanning electron microscopy and transmission electron microscopy. High-energy ball milling can efficiently reduce the grain size and considerably increase the Cu solubility in Ta. The significant enhancement of hardness of alloyed powders was also observed.
基金Postgraduate Innovation Programs of Jiangsu Scientific Research(CXLX11_0921)The Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD)
文摘在阻挡层化学机械抛光(CMP)过程中,阻挡层材料钽(Ta)易与铜(Cu)发生电偶腐蚀。针对这一问题,通过电化学分析方法研究了碱性抛光液中非离子表面活性剂对铜钽腐蚀电位的影响;通过CMP实验研究了非离子表面活性剂对铜钽去除速率的影响。结果表明,随着非离子表面活性剂体积分数增加至9%,铜钽的腐蚀电位均降低。最终确定最佳非离子表面活性剂的体积分数为6%。此时,在静态条件下,铜钽电极之间的电位差为1 m V;在动态条件下,铜钽电极之间的电位差为40 m V,可极大地减弱铜钽电偶腐蚀。同时,铜钽的去除速率分别为47 nm·min-1和39 nm·min-1,铜钽去除速率选择比满足阻挡层CMP要求。
基金Major National Science and Technology Special Projects(2016ZX02301003-004-007)Natural Science Foundation of Hebei Province,China(E2014202147,F2015202267)Key Laboratory of Electronic Materials and Devices of Tianjin,China
文摘超大规模集成电路Cu互连中的核心技术之一是制备性能优异的扩散阻挡层。本文采用直流磁控反应溅射在N2/Ar气氛中制备了不同组分比的Ta-N薄膜,并原位制备了Cu/Ta-N/基底复合结构,对部分样品在N2保护下进行了快速热处理(RTA),采用台阶仪、四探针测试仪、原子力显微镜(AFM)、扫描电镜、X射线衍射(XRD)对薄膜形貌结构进行了表征。结果表明,随着N2流量比的增加,薄膜沉积速率下降,表面趋于平滑,Ta-N薄膜热稳定性能及阻挡性能随之提高,而电阻率则上升。氮流量比为0.3制备的厚度为100nm的Ta-N薄膜经600℃/5m in RTA后,仍可保持对Cu的有效阻挡;在更高温度下退火,Cu将穿过阻挡层与Si发生反应,导致阻挡层失效。
