Spintronics exploits magnetic order parameters to encode binary information and utilizes spin-dependent transport for data processing[1].To date,most spintronic devices have been based on ferromagnetic materials,which...Spintronics exploits magnetic order parameters to encode binary information and utilizes spin-dependent transport for data processing[1].To date,most spintronic devices have been based on ferromagnetic materials,which offer straightforward information writing and reading through manipulation and detection of their magnetization.A prototypical device is the magnetic tunnel junction(MTJ),where non-volatile memory readout is achieved via the tunneling magnetoresistance(TMR)effect—distinct resistance states arising from parallel and antiparallel alignments of ferromagnetic electrodes.MTJs serve as the building blocks of magnetic random-access memories(MRAMs),which have already found commercial applications.展开更多
文摘Spintronics exploits magnetic order parameters to encode binary information and utilizes spin-dependent transport for data processing[1].To date,most spintronic devices have been based on ferromagnetic materials,which offer straightforward information writing and reading through manipulation and detection of their magnetization.A prototypical device is the magnetic tunnel junction(MTJ),where non-volatile memory readout is achieved via the tunneling magnetoresistance(TMR)effect—distinct resistance states arising from parallel and antiparallel alignments of ferromagnetic electrodes.MTJs serve as the building blocks of magnetic random-access memories(MRAMs),which have already found commercial applications.
