期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors 被引量:12
1
作者 Sohail Ahmed Jiabao Yi 《Nano-Micro Letters》 SCIE EI CAS 2017年第4期152-174,共23页
Two-dimensional(2D) materials have attracted extensive interest due to their excellent electrical, thermal,mechanical, and optical properties. Graphene has been one of the most explored 2D materials. However, its zero... Two-dimensional(2D) materials have attracted extensive interest due to their excellent electrical, thermal,mechanical, and optical properties. Graphene has been one of the most explored 2D materials. However, its zero band gap has limited its applications in electronic devices. Transition metal dichalcogenide(TMDC), another kind of 2D material,has a nonzero direct band gap(same charge carrier momentum in valence and conduction band) at monolayer state,promising for the efficient switching devices(e.g., field-effect transistors). This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2DTMDC materials and also includes an introduction of 2D materials along with the synthesis techniques. Finally, this review describes the possible methodology and future prospective to enhance the charge carrier mobility for electronic devices. 展开更多
关键词 2D materials tmdc layers Charge carrier mobility Field-effect transistor HETEROSTRUCTURE Charge carrier scattering
在线阅读 下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部