Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative thr...Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.展开更多
Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work comb...Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.展开更多
Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on...Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on endurance and access speed,which is considered to be one of the candidates to replace SRAM for space application.However,little attention has been given to theγ-ray irradiation effect on the SOT-MRAM device yet.Here,we report the Co-60 irradiation results for both SOT(spin-orbit torque)magnetic films and SOT-Hall devices with the same stacks.The properties of magnetic films are not affected by radiation even with an accumulated dose up to 300 krad(Si)while the magnetoelectronic properties of SOTHall devices exhibit a reversible change behavior during the radiation.We propose a non-equilibrium anomalous Hall effect model to understand the phenomenon.Achieved results and proposed analysis in this work can be used for the material and structure design of memory cell in radiation-hardened SOT-MRAM.展开更多
The total ionizing dose（TID） response of 65-nm CMOS transistors is studied by 10-ke V x-ray and 3-Me V protons up to 1 Grad（SiO_2） total dose.The degradation levels induced by the two radiation sources are differe...The total ionizing dose（TID） response of 65-nm CMOS transistors is studied by 10-ke V x-ray and 3-Me V protons up to 1 Grad（SiO_2） total dose.The degradation levels induced by the two radiation sources are different to some extent.The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons.The holes＇ recombination also contributes to the difference.Compared to these two mechanisms,the influence of the dose rate is negligible.展开更多
This work presents a systematic analysis of proton-induced total ionizing dose(TID)effects in 1.2 k V silicon carbide(SiC)power devices with various edge termination structures.Three edge terminations including ring-a...This work presents a systematic analysis of proton-induced total ionizing dose(TID)effects in 1.2 k V silicon carbide(SiC)power devices with various edge termination structures.Three edge terminations including ring-assisted junction termination extension(RA-JTE),multiple floating zone JTE(MFZ-JTE),and field limiting rings(FLR)were fabricated and irradiated with45 Me V protons at fluences ranging from 1×10^(12) to 1×10^(14) cm^(-2).Experimental results,supported by TCAD simulations,show that the RA-JTE structure maintained stable breakdown performance with less than 1%variation due to its effective electric field redistribution by multiple P+rings.In contrast,MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1%and 15.2%,respectively,under the highest fluence.These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened Si C power devices in space and other highradiation environments.展开更多
基金Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147)the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
基金This work was financially supported by the National Natural Science Foundation of China(No.61704189)the Common Information System Equipment Pre-Research Special Technology Project(31513020404-2)Youth Innovation Promotion Association of Chinese Academy of Sciences and the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,and the Key Research Program of Frontier Sciences,CAS(Grant ZDBS-LY-JSC015)。
文摘Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.
基金This work is financially supported by Strategic Priority Research Program of the CAS(Grant No.XDA18000000)Youth Innovation Promotion Association of CAS(Grant No.2015097).
文摘Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on endurance and access speed,which is considered to be one of the candidates to replace SRAM for space application.However,little attention has been given to theγ-ray irradiation effect on the SOT-MRAM device yet.Here,we report the Co-60 irradiation results for both SOT(spin-orbit torque)magnetic films and SOT-Hall devices with the same stacks.The properties of magnetic films are not affected by radiation even with an accumulated dose up to 300 krad(Si)while the magnetoelectronic properties of SOTHall devices exhibit a reversible change behavior during the radiation.We propose a non-equilibrium anomalous Hall effect model to understand the phenomenon.Achieved results and proposed analysis in this work can be used for the material and structure design of memory cell in radiation-hardened SOT-MRAM.
文摘The total ionizing dose（TID） response of 65-nm CMOS transistors is studied by 10-ke V x-ray and 3-Me V protons up to 1 Grad（SiO_2） total dose.The degradation levels induced by the two radiation sources are different to some extent.The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons.The holes＇ recombination also contributes to the difference.Compared to these two mechanisms,the influence of the dose rate is negligible.
基金supported by the IITP(Institute for Information&Communications Technology Planning&Evaluation)under the ITRC(Information Technology Research Center)support program(IITP-2025-RS-2024-00438288)grant funded by the Korea government(MSIT)+1 种基金National Research Council of Science&Technology(NST)grant by the MSIT(Aerospace Semiconductor Strategy Research Project No.GTL25051-000)supported by the IC Design Education Center(IDEC),Korea。
文摘This work presents a systematic analysis of proton-induced total ionizing dose(TID)effects in 1.2 k V silicon carbide(SiC)power devices with various edge termination structures.Three edge terminations including ring-assisted junction termination extension(RA-JTE),multiple floating zone JTE(MFZ-JTE),and field limiting rings(FLR)were fabricated and irradiated with45 Me V protons at fluences ranging from 1×10^(12) to 1×10^(14) cm^(-2).Experimental results,supported by TCAD simulations,show that the RA-JTE structure maintained stable breakdown performance with less than 1%variation due to its effective electric field redistribution by multiple P+rings.In contrast,MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1%and 15.2%,respectively,under the highest fluence.These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened Si C power devices in space and other highradiation environments.
