A model of the operational amplifier based on VHDL-AMS is proposed. According to needs of simulating the total ionizing dose(TID) radiation effect, parameters of operational amplifier are taken into account when the p...A model of the operational amplifier based on VHDL-AMS is proposed. According to needs of simulating the total ionizing dose(TID) radiation effect, parameters of operational amplifier are taken into account when the performance is specified. The operational amplifier model used for the TID radiation effect simulation is completed after verifying each modeled parameter. And a parameter for describing the external environment is introduced to make the model combined with TID. Finally, an example is used to illustrate the TID effect on the operational amplifier of MC14573, proving the validity of the model.展开更多
Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work comb...Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.展开更多
Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on...Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on endurance and access speed,which is considered to be one of the candidates to replace SRAM for space application.However,little attention has been given to theγ-ray irradiation effect on the SOT-MRAM device yet.Here,we report the Co-60 irradiation results for both SOT(spin-orbit torque)magnetic films and SOT-Hall devices with the same stacks.The properties of magnetic films are not affected by radiation even with an accumulated dose up to 300 krad(Si)while the magnetoelectronic properties of SOTHall devices exhibit a reversible change behavior during the radiation.We propose a non-equilibrium anomalous Hall effect model to understand the phenomenon.Achieved results and proposed analysis in this work can be used for the material and structure design of memory cell in radiation-hardened SOT-MRAM.展开更多
战术信息分发系统(tactical information distribution system,TIDS)是指挥信息系统的重要组成部分。针对层次分析法(the analytic hierarchy process,AHP)进行系统作战效能评估的缺陷,在充分考虑TIDS作战效能评估特殊性的基础上,研究...战术信息分发系统(tactical information distribution system,TIDS)是指挥信息系统的重要组成部分。针对层次分析法(the analytic hierarchy process,AHP)进行系统作战效能评估的缺陷,在充分考虑TIDS作战效能评估特殊性的基础上,研究了基于网络分析法(the analytic network process,ANP)的TIDS作战效能评估框架,给出了影响系统作战效能的主要指标集,分析了各指标间的影响关系,建立了系统作战效能评估的ANP模型,提出了基于ANP法的TIDS作战效能评估思路,并通过实例进行了模型的验证,为基于使命的TIDS作战效能评估提供了理论参考。展开更多
Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative thr...Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.展开更多
The influence of characteristics’ measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied. We find that measuring the front-gate curves has no influence on tota...The influence of characteristics’ measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect.However, the back-gate curves’ measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the backgate curves’ measurement, which are: Fowler–Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling.The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves’ measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.展开更多
基金supported by the National Natural Science Foundation of China (No. 61303034)Aeronautical Science Foundation of China (No. 2013ZD31007)
文摘A model of the operational amplifier based on VHDL-AMS is proposed. According to needs of simulating the total ionizing dose(TID) radiation effect, parameters of operational amplifier are taken into account when the performance is specified. The operational amplifier model used for the TID radiation effect simulation is completed after verifying each modeled parameter. And a parameter for describing the external environment is introduced to make the model combined with TID. Finally, an example is used to illustrate the TID effect on the operational amplifier of MC14573, proving the validity of the model.
基金This work was financially supported by the National Natural Science Foundation of China(No.61704189)the Common Information System Equipment Pre-Research Special Technology Project(31513020404-2)Youth Innovation Promotion Association of Chinese Academy of Sciences and the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,and the Key Research Program of Frontier Sciences,CAS(Grant ZDBS-LY-JSC015)。
文摘Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.
基金This work is financially supported by Strategic Priority Research Program of the CAS(Grant No.XDA18000000)Youth Innovation Promotion Association of CAS(Grant No.2015097).
文摘Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on endurance and access speed,which is considered to be one of the candidates to replace SRAM for space application.However,little attention has been given to theγ-ray irradiation effect on the SOT-MRAM device yet.Here,we report the Co-60 irradiation results for both SOT(spin-orbit torque)magnetic films and SOT-Hall devices with the same stacks.The properties of magnetic films are not affected by radiation even with an accumulated dose up to 300 krad(Si)while the magnetoelectronic properties of SOTHall devices exhibit a reversible change behavior during the radiation.We propose a non-equilibrium anomalous Hall effect model to understand the phenomenon.Achieved results and proposed analysis in this work can be used for the material and structure design of memory cell in radiation-hardened SOT-MRAM.
文摘战术信息分发系统(tactical information distribution system,TIDS)是指挥信息系统的重要组成部分。针对层次分析法(the analytic hierarchy process,AHP)进行系统作战效能评估的缺陷,在充分考虑TIDS作战效能评估特殊性的基础上,研究了基于网络分析法(the analytic network process,ANP)的TIDS作战效能评估框架,给出了影响系统作战效能的主要指标集,分析了各指标间的影响关系,建立了系统作战效能评估的ANP模型,提出了基于ANP法的TIDS作战效能评估思路,并通过实例进行了模型的验证,为基于使命的TIDS作战效能评估提供了理论参考。
基金Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147)the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
文摘The influence of characteristics’ measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect.However, the back-gate curves’ measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the backgate curves’ measurement, which are: Fowler–Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling.The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves’ measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.
