The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases fr...The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies （Or） within the a-IGZO layer is suppressed by increasing Po2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing Po2. Therefore, the improved interface quality with increasing Po2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.展开更多
The suitability of indium gallium zinc oxide(IGZO) thin-film transistors(TFT) for implementation of active matrix display of organic light emitting diodes(AMOLED) compensation pixel circuits is addressed in this paper...The suitability of indium gallium zinc oxide(IGZO) thin-film transistors(TFT) for implementation of active matrix display of organic light emitting diodes(AMOLED) compensation pixel circuits is addressed in this paper. In particular, the impact of mobility on compensating performance for the implementation in AMOLED pixel circuits is investigated. Details of the effective mobility modeling using the power law of gate-to-source voltage are provided, and parameters are extracted according to the measured current-to-voltage data of IGZO TFT samples. The investigated AMOLED pixel circuit consists of 4 switching TFTs, 1 driving TFT, and 1 capacitor. A "source-follower" structure is used for the threshold voltage extraction of the driving transistor. A new timing diagram is proposed; thus the current error of the pixel circuit is almost independent of the effective mobility. But, to improve the precision of the threshold voltage extraction of the driving transistor, the mobility is required to be greater than5 cm^2 V^(-1) s^(-1). On the other hand, the optimized storage capacitance is reversely proportional to the effective mobility. Thus, the layout area of the pixel circuit can be decreased from 100 × 100 to 100 × 68 μm2, with the effective mobility increased from 10 to50 cm^2 V^(-1) s^(-1). Therefore, IGZO TFT is a good alternative backplane technology for AMOLED displays, and a higher effective mobility is preferred for high compensation performance and compact layout.展开更多
A p-type low-temperature poly-Si thin film transistors（LTPS TFTs） integrated gate driver using 2 nonoverlapped clocks is proposed.This gate driver features charge-sharing structure to turn off buffer TFT and suppres...A p-type low-temperature poly-Si thin film transistors（LTPS TFTs） integrated gate driver using 2 nonoverlapped clocks is proposed.This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects.It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period.The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases.The proposed gate driver shows a simple circuit,as only 6 TFTs and 1 capacitor are used for single-stage,and the buffer TFT is used for both pulling-down and pulling-up of output electrode.Feasibility of the proposed gate driver is proven through detailed analyses.Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than0.8 pF,and pulse of gate driver outputs can be reduced to 5μs.The proposed gate driver can still function properly with positive V（TH）shift within 0.4 V and negative V（TH） shift within-1.2 V and it is robust and promising for high-resolution display.展开更多
设计了一个基于金属氧化物薄膜晶体管工艺的8位电流舵数/模转换器(Digital to Analog Converter,DAC),包括定时刷新模块、同步寄存器电路、分段译码电路、开关驱动电路、开关阵列和电流源阵列、多路选择器网络、随机序列发生器。在数字...设计了一个基于金属氧化物薄膜晶体管工艺的8位电流舵数/模转换器(Digital to Analog Converter,DAC),包括定时刷新模块、同步寄存器电路、分段译码电路、开关驱动电路、开关阵列和电流源阵列、多路选择器网络、随机序列发生器。在数字电路中设计定时刷新结构解决了传统的自举逻辑门电荷泄露导致的电流源开关驱动电压的下降,避免了在低频信号下采样出错问题的发生。提出采用差分对偶译码的结构,保证打开和关闭两路信号可以同时到达开关驱动电路,保证驱动电路中电压上升和下降窗口的对称性,减小输出的毛刺;同时利用数字电路中的D触发器和译码电路中的逻辑门实现驱动增强电路,保证可以驱动模拟电路中的高位单位电流源,提高转换速率;利用动态元件匹配(Dynamic Elements Matching,DEM)技术提高DAC的动态性能。后仿真结果表明,所设计的DAC面积为73 mm 2,功耗为6.5 mW,输出电流摆幅为301.46μA,最大转换速率为32 kS/s,在单位电流源的随机匹配误差的标准差为0.1的条件下,奈奎斯特频率下的无杂散动态范围(Spurious-Free Dynamic Range,SFDR)可达到42.43 dB,最大的微分非线性(Differential Nonlinearity,DNL)为0.36 LSB,最大的积分非线性(Integral Nonlinearity,INL)为1.75 LSB,满足生物医学用柔性电子系统的需求。展开更多
电极片品质对液晶屏幕的显示效果极为关键。针对薄膜晶体管(Thin Film Transistor,TFT)电极板中缺陷尺寸微小、缺陷类别繁多、背景干扰因素多等问题,设计了一项基于改进的YOLOv5全新的视觉算法模型,可以实现对TFT电极板上常见缺陷的精...电极片品质对液晶屏幕的显示效果极为关键。针对薄膜晶体管(Thin Film Transistor,TFT)电极板中缺陷尺寸微小、缺陷类别繁多、背景干扰因素多等问题,设计了一项基于改进的YOLOv5全新的视觉算法模型,可以实现对TFT电极板上常见缺陷的精准识别。改进的视觉算法模型通过将卷积块注意力模块(Con-volutional Block Attention Module,CBAM)机制融合到YOLOv5的核心网络架构中,有效降低了缺陷背景干扰的影响,并显著提升了对缺陷特征点的检测识别效果。在TFT电极板常见缺陷数据集上进行测试,测试结果显示,修改后的新算法对TFT电极板异物、划痕、裂片和油污4类缺陷的平均检测精度均有提升。展开更多
Predicting player performance in sports is a critical challenge with significant implications for team success,fan engagement,and financial outcomes.Although,inMajor League Baseball(MLB),statistical methodologies such...Predicting player performance in sports is a critical challenge with significant implications for team success,fan engagement,and financial outcomes.Although,inMajor League Baseball(MLB),statistical methodologies such as sabermetrics have been widely used,the dynamic nature of sports makes accurate performance prediction a difficult task.Enhanced forecasts can provide immense value to team managers by aiding strategic player contract and acquisition decisions.This study addresses this challenge by employing the temporal fusion transformer(TFT),an advanced and cutting-edge deep learning model for complex data,to predict pitchers’earned run average(ERA),a key metric in baseball performance analysis.The performance of the TFT model is evaluated against recurrent neural network-based approaches and existing projection systems.In experimental results,the TFT based model consistently outperformed its counterparts,demonstrating superior accuracy in pitcher performance prediction.By leveraging the advanced capabilities of TFT,this study contributes to more precise player evaluations and improves strategic planning in baseball.展开更多
基金Supported by the National Basic Research Program of China under Grant Nos 2010CB327504,2011CB922100 and2011CB301900the National Natural Science Foundation of China under Grant Nos 11104130 and 61322112+2 种基金the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011556 and BK2011050the Priority Academic Program Development of Jiangsu Higher Education Institutionsand the NUPTSF Grant Nos NY213069 and NY214028
文摘The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies （Or） within the a-IGZO layer is suppressed by increasing Po2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing Po2. Therefore, the improved interface quality with increasing Po2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.
基金supported by National Natural Science Foundation of China(60676044,61006057)Electronics Engineering of College of Heilongjiang Province(DZZD20100013)
基金supported by National Natural Science Foundation of China (No. 61404002)the Shenzhen Municipal Scientific Program (No. JCYJ20150626111117384)
文摘The suitability of indium gallium zinc oxide(IGZO) thin-film transistors(TFT) for implementation of active matrix display of organic light emitting diodes(AMOLED) compensation pixel circuits is addressed in this paper. In particular, the impact of mobility on compensating performance for the implementation in AMOLED pixel circuits is investigated. Details of the effective mobility modeling using the power law of gate-to-source voltage are provided, and parameters are extracted according to the measured current-to-voltage data of IGZO TFT samples. The investigated AMOLED pixel circuit consists of 4 switching TFTs, 1 driving TFT, and 1 capacitor. A "source-follower" structure is used for the threshold voltage extraction of the driving transistor. A new timing diagram is proposed; thus the current error of the pixel circuit is almost independent of the effective mobility. But, to improve the precision of the threshold voltage extraction of the driving transistor, the mobility is required to be greater than5 cm^2 V^(-1) s^(-1). On the other hand, the optimized storage capacitance is reversely proportional to the effective mobility. Thus, the layout area of the pixel circuit can be decreased from 100 × 100 to 100 × 68 μm2, with the effective mobility increased from 10 to50 cm^2 V^(-1) s^(-1). Therefore, IGZO TFT is a good alternative backplane technology for AMOLED displays, and a higher effective mobility is preferred for high compensation performance and compact layout.
基金Project supported by the Science and Technology Project of Hunan Province,China(No.2015JC3401)
文摘A p-type low-temperature poly-Si thin film transistors（LTPS TFTs） integrated gate driver using 2 nonoverlapped clocks is proposed.This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects.It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period.The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases.The proposed gate driver shows a simple circuit,as only 6 TFTs and 1 capacitor are used for single-stage,and the buffer TFT is used for both pulling-down and pulling-up of output electrode.Feasibility of the proposed gate driver is proven through detailed analyses.Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than0.8 pF,and pulse of gate driver outputs can be reduced to 5μs.The proposed gate driver can still function properly with positive V（TH）shift within 0.4 V and negative V（TH） shift within-1.2 V and it is robust and promising for high-resolution display.
文摘设计了一个基于金属氧化物薄膜晶体管工艺的8位电流舵数/模转换器(Digital to Analog Converter,DAC),包括定时刷新模块、同步寄存器电路、分段译码电路、开关驱动电路、开关阵列和电流源阵列、多路选择器网络、随机序列发生器。在数字电路中设计定时刷新结构解决了传统的自举逻辑门电荷泄露导致的电流源开关驱动电压的下降,避免了在低频信号下采样出错问题的发生。提出采用差分对偶译码的结构,保证打开和关闭两路信号可以同时到达开关驱动电路,保证驱动电路中电压上升和下降窗口的对称性,减小输出的毛刺;同时利用数字电路中的D触发器和译码电路中的逻辑门实现驱动增强电路,保证可以驱动模拟电路中的高位单位电流源,提高转换速率;利用动态元件匹配(Dynamic Elements Matching,DEM)技术提高DAC的动态性能。后仿真结果表明,所设计的DAC面积为73 mm 2,功耗为6.5 mW,输出电流摆幅为301.46μA,最大转换速率为32 kS/s,在单位电流源的随机匹配误差的标准差为0.1的条件下,奈奎斯特频率下的无杂散动态范围(Spurious-Free Dynamic Range,SFDR)可达到42.43 dB,最大的微分非线性(Differential Nonlinearity,DNL)为0.36 LSB,最大的积分非线性(Integral Nonlinearity,INL)为1.75 LSB,满足生物医学用柔性电子系统的需求。
基金supported by SKKU Global Research Platform Research Fund,Sungkyunkwan University,2024-2025.
文摘Predicting player performance in sports is a critical challenge with significant implications for team success,fan engagement,and financial outcomes.Although,inMajor League Baseball(MLB),statistical methodologies such as sabermetrics have been widely used,the dynamic nature of sports makes accurate performance prediction a difficult task.Enhanced forecasts can provide immense value to team managers by aiding strategic player contract and acquisition decisions.This study addresses this challenge by employing the temporal fusion transformer(TFT),an advanced and cutting-edge deep learning model for complex data,to predict pitchers’earned run average(ERA),a key metric in baseball performance analysis.The performance of the TFT model is evaluated against recurrent neural network-based approaches and existing projection systems.In experimental results,the TFT based model consistently outperformed its counterparts,demonstrating superior accuracy in pitcher performance prediction.By leveraging the advanced capabilities of TFT,this study contributes to more precise player evaluations and improves strategic planning in baseball.
