利用快速热压烧结法制备了Bi2Te2.5Se0.5热电合金。通过XRD、SEM、四点探针法以及热电材料测试仪等分析了合金试片的微观结构与热电性能。结果表明:二次热压烧结后合金内部的晶粒具有特殊的排列方向,这可增强其热电性能。经二次热压烧结...利用快速热压烧结法制备了Bi2Te2.5Se0.5热电合金。通过XRD、SEM、四点探针法以及热电材料测试仪等分析了合金试片的微观结构与热电性能。结果表明:二次热压烧结后合金内部的晶粒具有特殊的排列方向,这可增强其热电性能。经二次热压烧结后,合金的室温电导率增至700 S/cm,塞贝克系数维持在-200μV/K左右,故其室温功率因子可增至2.9 m W/(m·K^2)。通过计算得出二次烧结后其热电优值在325~425 K时皆大于1。展开更多
Doping modification is one of the most effective ways to optimize the thermoelectric properties of Bi_(2)Te_(3)-based alloys.P-type Bi_(2−x)Sb_(x)Te_(3) thermoelectric materials have been successfully prepared by dire...Doping modification is one of the most effective ways to optimize the thermoelectric properties of Bi_(2)Te_(3)-based alloys.P-type Bi_(2−x)Sb_(x)Te_(3) thermoelectric materials have been successfully prepared by direct Sb doping method.It can be found that doping Sb into Bi_(2)Te_(3) lattice array for Bi-site replacement facilitates the generation of Sb′Te anti-site defects.This anti-site defects can increase the hole concentration and optimize electrical transport properties of Bi_(2−x)Sb_(x)Te_(3) alloys.In addition,the point defects induced by mass and stress fluctuations and the Sb impurities produced during the sintering process can enhance the multi-scale phonon scattering and reduce the lattice thermal conductivity.As a result,the Bi_(0.47)Sb_(1.63)Te_(3) sample has a maximum thermoelectric figure of merit ZT of 1.04 at 350 K.It is worth noting that the bipolar effect of Bi_(2)Te_(3)-based alloys can be weakened with the increase of Sb content.The Bi_(0.44)Sb_(1.66)Te_(3) sample has a maximum average ZT value(0.93)in the temperature range of 300–500 K,indicating that direct doping of Sb can broaden the temperature range corresponding to the optimal ZT value.This work provides an idea for developing high-performance near room temperature thermoelectric materials with a wide temperature range.展开更多
文摘利用快速热压烧结法制备了Bi2Te2.5Se0.5热电合金。通过XRD、SEM、四点探针法以及热电材料测试仪等分析了合金试片的微观结构与热电性能。结果表明:二次热压烧结后合金内部的晶粒具有特殊的排列方向,这可增强其热电性能。经二次热压烧结后,合金的室温电导率增至700 S/cm,塞贝克系数维持在-200μV/K左右,故其室温功率因子可增至2.9 m W/(m·K^2)。通过计算得出二次烧结后其热电优值在325~425 K时皆大于1。
基金National Natural Science Foundation of China under Grant(50401008)the Specialized Prophasic Research Project of Key Basic Research Plan(2004CCA03200)of China.
基金supported by the Anhui Province Natural Science Foundation for Excellent Youth Scholars(2208085Y17)the University Synergy Innovation Program of Anhui Province(GXXT-2022-008+1 种基金GXXT-2021-022)the Anhui Key Lab of Metal Material and Processing Open Project.
文摘Doping modification is one of the most effective ways to optimize the thermoelectric properties of Bi_(2)Te_(3)-based alloys.P-type Bi_(2−x)Sb_(x)Te_(3) thermoelectric materials have been successfully prepared by direct Sb doping method.It can be found that doping Sb into Bi_(2)Te_(3) lattice array for Bi-site replacement facilitates the generation of Sb′Te anti-site defects.This anti-site defects can increase the hole concentration and optimize electrical transport properties of Bi_(2−x)Sb_(x)Te_(3) alloys.In addition,the point defects induced by mass and stress fluctuations and the Sb impurities produced during the sintering process can enhance the multi-scale phonon scattering and reduce the lattice thermal conductivity.As a result,the Bi_(0.47)Sb_(1.63)Te_(3) sample has a maximum thermoelectric figure of merit ZT of 1.04 at 350 K.It is worth noting that the bipolar effect of Bi_(2)Te_(3)-based alloys can be weakened with the increase of Sb content.The Bi_(0.44)Sb_(1.66)Te_(3) sample has a maximum average ZT value(0.93)in the temperature range of 300–500 K,indicating that direct doping of Sb can broaden the temperature range corresponding to the optimal ZT value.This work provides an idea for developing high-performance near room temperature thermoelectric materials with a wide temperature range.
