Traditional chaotic maps struggle with narrow chaotic ranges and inefficiencies,limiting their use for lightweight,secure image encryption in resource-constrained Wireless Sensor Networks(WSNs).We propose the SPCM,a n...Traditional chaotic maps struggle with narrow chaotic ranges and inefficiencies,limiting their use for lightweight,secure image encryption in resource-constrained Wireless Sensor Networks(WSNs).We propose the SPCM,a novel one-dimensional discontinuous chaotic system integrating polynomial and sine functions,leveraging a piecewise function to achieve a broad chaotic range()and a high Lyapunov exponent(5.04).Validated through nine benchmarks,including standard randomness tests,Diehard tests,and Shannon entropy(3.883),SPCM demonstrates superior randomness and high sensitivity to initial conditions.Applied to image encryption,SPCM achieves 0.152582 s(39%faster than some techniques)and 433.42 KB/s throughput(134%higher than some techniques),setting new benchmarks for chaotic map-based methods in WSNs.Chaos-based permutation and exclusive or(XOR)diffusion yield near-zero correlation in encrypted images,ensuring strong resistance to Statistical Attacks(SA)and accurate recovery.SPCM also exhibits a strong avalanche effect(bit difference),making it an efficient,secure solution for WSNs in domains like healthcare and smart cities.展开更多
In-optical-sensor computing architectures based on neuro-inspired optical sensor arrays have become key milestones for in-sensor artificial intelligence(AI)technology,enabling intelligent vision sensing and extensive ...In-optical-sensor computing architectures based on neuro-inspired optical sensor arrays have become key milestones for in-sensor artificial intelligence(AI)technology,enabling intelligent vision sensing and extensive data processing.These architectures must demonstrate potential advantages in terms of mass production and complementary metal oxide semiconductor compatibility.Here,we introduce a visible-light-driven neuromorphic vision system that integrates front-end retinomorphic photosensors with a back-end artificial neural network(ANN),employing a single neuro-inspired indium-g allium-zinc-oxide photo transistor(NIP)featuring an aluminum sensitization layer(ASL).By methodically adjusting the ASL coverage on IGZO phototransistors,a fast-switching response-type and a synaptic response-type of IGZO photo transistors are successfully developed.Notably,the fabricated NIP shows a remarkable retina-like photoinduced synaptic plasticity under wavelengths up to 635 nm,with over256-states,weight update nonlinearity below 0.1,and a dynamic range of 64.01.Owing to this technology,a 6×6 neuro-inspired optical image sensor array with the NIP can perform highly integrated sensing,memory,and preprocessing functions,including contrast enhancement,and handwritten digit image recognition.The demonstrated prototype highlights the potential for efficient hardware implementations in in-sensor AI technologies.展开更多
Daytime star images captured by dedicated near-space star sensors are characterized by short exposures,high noise,and low Signal-to-Noise Ratios(SNRs).Such imaging is also affected by atmospheric turbulence,causing op...Daytime star images captured by dedicated near-space star sensors are characterized by short exposures,high noise,and low Signal-to-Noise Ratios(SNRs).Such imaging is also affected by atmospheric turbulence,causing optical phenomena,such as scintillation,distortion,and jitter.This causes difficulty in recording high-precision star images during the daytime.This study proposes an adaptive star point extraction method based on dynamically predicting stars'positions.First,it predicts the approximate position of stars based on the star catalog,sensor attitude,observation time,and other information,improving the extraction accuracy.Second,it employs a regional SNR sorting method that adaptively selects star images with higher SNRs,suppressing the scintillation effect and enhancing the SNR of star images.Third,depending on the star's motion trajectory characteristics on the image plane,it utilizes the centroid smoothing method for extraction,thus overcoming the impact of star drift.Field experiments demonstrate that the proposed method can effectively overcome star scintillation,drift,and irregular imaging caused by atmospheric turbulence,achieving a 100%success rate.Moreover,the extraction accuracy improves by more than 80%compared to traditional adaptive methods,attaining a value of 0.05 pixels(0.5"),thereby meeting the requirements of daytime astronomical attitude determination and positioning.展开更多
Various novel conjugated polymers(CPs)have been developed for organic photodetectors(OPDs),but their application to practical image sensors such as X-ray,R/G/B,and fingerprint sensors is rare.In this article,we report...Various novel conjugated polymers(CPs)have been developed for organic photodetectors(OPDs),but their application to practical image sensors such as X-ray,R/G/B,and fingerprint sensors is rare.In this article,we report the entire process from the synthesis and molecular engineering of novel CPs to the development of OPDs and fingerprint image sensors.We synthesized six benzo[1,2-d:4,5-d’]bis(oxazole)(BBO)-based CPs by modifying the alkyl side chains of the CPs.Several relationships between the molecular structure and the OPD performance were revealed,and increasing the number of linear octyl side chains on the conjugated backbone was the best way to improve Jph and reduce Jd in the OPDs.The optimized CP demonstrated promising OPD performance with a responsivity(R)of 0.22 A/W,specific detectivity(D^(*))of 1.05×10^(13)Jones at a bias of-1 V,rising/falling response time of 2.9/6.9μs,and cut-off frequency(f_(-3dB))of 134 kHz under collimated 530 nm LED irradiation.Finally,a fingerprint image sensor was fabricated by stacking the POTB1-based OPD layer on the organic thin-film transistors(318 ppi).The image contrast caused by the valleys and ridges in the fingerprints was obtained as a digital signal.展开更多
A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifier...A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifiers with gain boost structure, and biasing all the cells with the same voltage bias source, which requires careful layout design and large capacitors. In addition,capacitor array DAC is also applied to reduce power consumption,and low threshold voltage MOS transistors are used to achieve a large signal processing range. The ADC was implemented in a 0.18μm 4M-1 P CMOS process,and the experimental results indicate that it consumes only 7mW, which is much less than general pipeline ADCs. The ADC was used in a 300000 pixels CMOS image sensor.展开更多
A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction p...A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction photogate transistor is analyzed and simulated.The simulated results illustrate that the bipolar junction photogate transistor has the similar characteristics of the traditional photogate transistor.The photocurrent density of the bipolar junction photogate transistor increases exponentially with the incidence light power due to introducing the injection p+n junction.Its characteristic of blue response is rather improved compared to the traditional photogate transistor that benefits to increase the color photograph made up of the red,the green,and the blue.展开更多
A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 4...A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.展开更多
To further extend study on celestial attitude determination with strapdown star sensor from static into dynamic field, one prerequisite is to generate precise dynamic simulating star maps. First a neat analytical solu...To further extend study on celestial attitude determination with strapdown star sensor from static into dynamic field, one prerequisite is to generate precise dynamic simulating star maps. First a neat analytical solution of the smearing trajectory caused by spacecraft attitude maneuver is deduced successfully, whose parameters cover the geometric size of optics, three-axis angular velocities and CCD integral time. Then for the first time the mathematical law and method are discovered about how to synthesize the two formulae of smearing trajectory and the static Gaussian distribution function （GDF） model, the key of which is a line integral with regard to the static GDF attenuated by a factor 1/Ls （Ls is the arc length of the smearing trajectory） along the smearing trajectory. The dynamic smearing model is then obtained, also in an analytical form. After that, three sets of typical simulating maps and data are simulated from this dynamic model manifesting the expected smearing effects, also compatible with the linear model as its special case of no boresight rotation. Finally, model validity tests on a rate turntable are carried out, which results in a mean correlation coefficient 0.920 0 between the camera images and the corresponding model simulated ones with the same parameters. The sufficient similarity verifies the validity of the dynamic smearing model. This model, after pa- rameter calibration, can serve as a front-end loop of the ground semi-physical simulation system for celestial attitude determination with strapdown star sensor.展开更多
The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic par...The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.展开更多
Visual image sensor is developed to detect the weld pool images in pulsed MIG welding. An exposure controller, which is composed of the modules of the voltage transforming, the exposure parameters presetting, the comp...Visual image sensor is developed to detect the weld pool images in pulsed MIG welding. An exposure controller, which is composed of the modules of the voltage transforming, the exposure parameters presetting, the complex programmable logic device （CPLD） based logic controlling, exposure signal processing, the arc state detecting, the mechanical iris driving and so on, is designed at first. Then, a visual image sensor consists of an ordinary CCD camera, optical system and exposure controller is established. The exposure synchronic control logic is described with very-high-speed integrated circuit hardware description language （VHDL） and programmed with CPLD , to detect weld pool images at the stage of base current in pulsed MIG welding. Finally, both bead on plate welding and V groove filled welding are carried out, clear and consistent weld pool images are acquired.展开更多
A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added...A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.展开更多
We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide(aIGZO) thin-film transistors(TFTs) with a circular structure. The TFT, configured with the inner electrode...We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide(aIGZO) thin-film transistors(TFTs) with a circular structure. The TFT, configured with the inner electrode as source and outer electrode as drain, typically exhibits good saturation electrical characteristics, where the device has a constant drive current despite variations in drain voltage. Due to the very high output resistance exhibited by this asymmetric TFT structure with a circular shape, the pixel circuit considered here in common-drain configuration provides a higher gain of operation than a pixel circuit implemented with rectangular a-IGZO TFTs. They can be used as driving TFTs in active image sensor circuits. They are, therefore,good candidates for digital X-ray detectors in applications such as medical diagnostic procedures.展开更多
In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaA...In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.展开更多
A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correl...A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correlative double sampling(CDS),pixel FPN is cancelled and column FPN is stored and eliminated by the sampleand-hold operation of digitally programmable gain amplifier(DPGA).The bandwidth balance technology based on operational amplifier(op-amp) sharing is also introduced to decrease the power dissi...展开更多
In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metal...In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 gm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source.展开更多
A signal chain model of single-bit and multi-bit quanta image sensors(QISs)is established.Based on the proposed model,the photoresponse characteristics and signal error rates of QISs are investigated,and the effects o...A signal chain model of single-bit and multi-bit quanta image sensors(QISs)is established.Based on the proposed model,the photoresponse characteristics and signal error rates of QISs are investigated,and the effects of bit depth,quantum efficiency,dark current,and read noise on them are analyzed.When the signal error rates towards photons and photoelectrons counting are lower than 0.01,the high accuracy photon and photoelectron counting exposure ranges are determined.Furthermore,an optimization method of integration time to ensure that the QIS works in these high accuracy exposure ranges is presented.The trade-offs between pixel area,the mean value of incident photons,and integration time under different illuminance level are analyzed.For the 3-bit QIS with 0.16 e-/s dark current and 0.21 e-r.m.s.read noise,when the illuminance level and pixel area are 1 lux and 1.21μm^(2),or 10000 lux and 0.21μm^(2),the recommended integration time is 8.8 to 30 ms,or 10 to21.3μs,respectively.The proposed method can guide the design and operation of single-bit and multi-bit QISs.展开更多
The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environmen...The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environments,there are radiation related degradation and var-ious uncertainties affecting the positioning accuracy of CMOS image sensors,which further leads to a reliability reduction of CMOS image sensors.Obviously,the reliability of CMOS image sensors is related to their specified function,degradation,and uncertainties;however,current research has not fully described this relationship.In this paper,a comprehensive approach to reliability modelling of CMOs image sensors is proposed based on the reliability science principles.Firstly,the perfor-mance margin modelling of centroid positioning accuracy is conducted.Then,the degradation model of CMOS image sensors is derived considering the dark current increase induced by the total ionizing dose effects.Finally,various uncertainties are analyzed and quantified,and the measure-ment equation of reliability is proposed.A case study of a CMOS image sensor is conducted to apply the proposed method,and the sensitivity analysis can provide suggestions for design and use of CMOS image sensors to ensure reliability.A simulation study is conducted to present the advantages oftheproposed comprehensive approach.展开更多
To test high resolution and dynamic performance of star sensor, a method of consideration image motion on Modeling the motion blur of star sensor is proposed. Firstly, image motion geometric model based on the rotatio...To test high resolution and dynamic performance of star sensor, a method of consideration image motion on Modeling the motion blur of star sensor is proposed. Firstly, image motion geometric model based on the rotation of Starlight vector is studied. Secondly, with the help of the normal distribution of static star image energy model, introducing the star image motion speed, obtaining the energy distribution function of moving stars, implementing high dynamic simulation of star map. Finally, establishing the simulation environment, through adjusting input parameters such as integral time, rate of change of three attitude angle, the launch time, location, then, important simulation data of stars observed by star sensor in orbit can quickly be obtained, such as navigation stars information, value and direction of image motion, intensity distribution, signal to noise ratio. This work is very important to research and evaluate the star image motion compensation algorithm.展开更多
This paper designs and implements an image transmission algorithm applied to plant information collection based on the wireless sensor network. It can effectively reduce the volume of transmitted data, low-energy, hig...This paper designs and implements an image transmission algorithm applied to plant information collection based on the wireless sensor network. It can effectively reduce the volume of transmitted data, low-energy, high-availability image compression algorithm. This algorithm mainly has two aspects of improvement measures: the first is to reduce the number of pixels that transmit images, from interlaced scanning to interlaced neighbor scanning;the second is to use JPEG image compression algorithm [1], changing the value of the quantization table in the algorithm [2]. After image compression, the image data volume is greatly reduced;the transmission efficiency is improved;and the problem of excessive data volume during image transmission is effectively solved.展开更多
The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random t...The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random telegraph signal noise in the pixel source follower based on the binomial distribution is set up. The number of electrons captured or released by the oxide traps in the unit time is described as the random variables which obey the binomial distribution. As a result,the output states and the corresponding probabilities of the first and the second samples of the correlated double sampling circuit are acquired. The standard deviation of the output states after the correlated double sampling circuit can be obtained accordingly. In the simulation section, one hundred thousand samples of the source follower MOSFET have been simulated,and the simulation results show that the proposed model has the similar statistical characteristics with the existing models under the effect of the channel length and the density of the oxide trap. Moreover, the noise histogram of the proposed model has been evaluated at different environmental temperatures.展开更多
基金supported by the National Research Foundation of Korea(NRF)grant funded by the Korean government Ministry of Science and ICT(MIST)(RS-2022-00165225).
文摘Traditional chaotic maps struggle with narrow chaotic ranges and inefficiencies,limiting their use for lightweight,secure image encryption in resource-constrained Wireless Sensor Networks(WSNs).We propose the SPCM,a novel one-dimensional discontinuous chaotic system integrating polynomial and sine functions,leveraging a piecewise function to achieve a broad chaotic range()and a high Lyapunov exponent(5.04).Validated through nine benchmarks,including standard randomness tests,Diehard tests,and Shannon entropy(3.883),SPCM demonstrates superior randomness and high sensitivity to initial conditions.Applied to image encryption,SPCM achieves 0.152582 s(39%faster than some techniques)and 433.42 KB/s throughput(134%higher than some techniques),setting new benchmarks for chaotic map-based methods in WSNs.Chaos-based permutation and exclusive or(XOR)diffusion yield near-zero correlation in encrypted images,ensuring strong resistance to Statistical Attacks(SA)and accurate recovery.SPCM also exhibits a strong avalanche effect(bit difference),making it an efficient,secure solution for WSNs in domains like healthcare and smart cities.
基金supported by the National Research Foundation of Korea(NRF)Grant funded by the Korea government(MSIT)(Grant No.RS-2023-00256917)Samsung Display。
文摘In-optical-sensor computing architectures based on neuro-inspired optical sensor arrays have become key milestones for in-sensor artificial intelligence(AI)technology,enabling intelligent vision sensing and extensive data processing.These architectures must demonstrate potential advantages in terms of mass production and complementary metal oxide semiconductor compatibility.Here,we introduce a visible-light-driven neuromorphic vision system that integrates front-end retinomorphic photosensors with a back-end artificial neural network(ANN),employing a single neuro-inspired indium-g allium-zinc-oxide photo transistor(NIP)featuring an aluminum sensitization layer(ASL).By methodically adjusting the ASL coverage on IGZO phototransistors,a fast-switching response-type and a synaptic response-type of IGZO photo transistors are successfully developed.Notably,the fabricated NIP shows a remarkable retina-like photoinduced synaptic plasticity under wavelengths up to 635 nm,with over256-states,weight update nonlinearity below 0.1,and a dynamic range of 64.01.Owing to this technology,a 6×6 neuro-inspired optical image sensor array with the NIP can perform highly integrated sensing,memory,and preprocessing functions,including contrast enhancement,and handwritten digit image recognition.The demonstrated prototype highlights the potential for efficient hardware implementations in in-sensor AI technologies.
基金funded by the National Natural Science Foundation of China(Nos.42374011,42074013)through the Natural Science Foundation’s Outstanding Youth Fund Program of Henan Province,China(Nos.242300421150,242300421151)。
文摘Daytime star images captured by dedicated near-space star sensors are characterized by short exposures,high noise,and low Signal-to-Noise Ratios(SNRs).Such imaging is also affected by atmospheric turbulence,causing optical phenomena,such as scintillation,distortion,and jitter.This causes difficulty in recording high-precision star images during the daytime.This study proposes an adaptive star point extraction method based on dynamically predicting stars'positions.First,it predicts the approximate position of stars based on the star catalog,sensor attitude,observation time,and other information,improving the extraction accuracy.Second,it employs a regional SNR sorting method that adaptively selects star images with higher SNRs,suppressing the scintillation effect and enhancing the SNR of star images.Third,depending on the star's motion trajectory characteristics on the image plane,it utilizes the centroid smoothing method for extraction,thus overcoming the impact of star drift.Field experiments demonstrate that the proposed method can effectively overcome star scintillation,drift,and irregular imaging caused by atmospheric turbulence,achieving a 100%success rate.Moreover,the extraction accuracy improves by more than 80%compared to traditional adaptive methods,attaining a value of 0.05 pixels(0.5"),thereby meeting the requirements of daytime astronomical attitude determination and positioning.
基金funded by the National Research Foundation(NRF)of Korea(2020M3H4A3081816,RS-2023-00304936,and RS-2024-00398065).
文摘Various novel conjugated polymers(CPs)have been developed for organic photodetectors(OPDs),but their application to practical image sensors such as X-ray,R/G/B,and fingerprint sensors is rare.In this article,we report the entire process from the synthesis and molecular engineering of novel CPs to the development of OPDs and fingerprint image sensors.We synthesized six benzo[1,2-d:4,5-d’]bis(oxazole)(BBO)-based CPs by modifying the alkyl side chains of the CPs.Several relationships between the molecular structure and the OPD performance were revealed,and increasing the number of linear octyl side chains on the conjugated backbone was the best way to improve Jph and reduce Jd in the OPDs.The optimized CP demonstrated promising OPD performance with a responsivity(R)of 0.22 A/W,specific detectivity(D^(*))of 1.05×10^(13)Jones at a bias of-1 V,rising/falling response time of 2.9/6.9μs,and cut-off frequency(f_(-3dB))of 134 kHz under collimated 530 nm LED irradiation.Finally,a fingerprint image sensor was fabricated by stacking the POTB1-based OPD layer on the organic thin-film transistors(318 ppi).The image contrast caused by the valleys and ridges in the fingerprints was obtained as a digital signal.
文摘A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifiers with gain boost structure, and biasing all the cells with the same voltage bias source, which requires careful layout design and large capacitors. In addition,capacitor array DAC is also applied to reduce power consumption,and low threshold voltage MOS transistors are used to achieve a large signal processing range. The ADC was implemented in a 0.18μm 4M-1 P CMOS process,and the experimental results indicate that it consumes only 7mW, which is much less than general pipeline ADCs. The ADC was used in a 300000 pixels CMOS image sensor.
文摘A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction photogate transistor is analyzed and simulated.The simulated results illustrate that the bipolar junction photogate transistor has the similar characteristics of the traditional photogate transistor.The photocurrent density of the bipolar junction photogate transistor increases exponentially with the incidence light power due to introducing the injection p+n junction.Its characteristic of blue response is rather improved compared to the traditional photogate transistor that benefits to increase the color photograph made up of the red,the green,and the blue.
文摘A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.
文摘To further extend study on celestial attitude determination with strapdown star sensor from static into dynamic field, one prerequisite is to generate precise dynamic simulating star maps. First a neat analytical solution of the smearing trajectory caused by spacecraft attitude maneuver is deduced successfully, whose parameters cover the geometric size of optics, three-axis angular velocities and CCD integral time. Then for the first time the mathematical law and method are discovered about how to synthesize the two formulae of smearing trajectory and the static Gaussian distribution function （GDF） model, the key of which is a line integral with regard to the static GDF attenuated by a factor 1/Ls （Ls is the arc length of the smearing trajectory） along the smearing trajectory. The dynamic smearing model is then obtained, also in an analytical form. After that, three sets of typical simulating maps and data are simulated from this dynamic model manifesting the expected smearing effects, also compatible with the linear model as its special case of no boresight rotation. Finally, model validity tests on a rate turntable are carried out, which results in a mean correlation coefficient 0.920 0 between the camera images and the corresponding model simulated ones with the same parameters. The sufficient similarity verifies the validity of the dynamic smearing model. This model, after pa- rameter calibration, can serve as a front-end loop of the ground semi-physical simulation system for celestial attitude determination with strapdown star sensor.
基金the National Natural Science Foundation of China (No.10075029).
文摘The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.
基金This work was supported by the National High Technology Research and Development Program("863"Program) of China ( ContractNo 2007AA04Z258)
文摘Visual image sensor is developed to detect the weld pool images in pulsed MIG welding. An exposure controller, which is composed of the modules of the voltage transforming, the exposure parameters presetting, the complex programmable logic device （CPLD） based logic controlling, exposure signal processing, the arc state detecting, the mechanical iris driving and so on, is designed at first. Then, a visual image sensor consists of an ordinary CCD camera, optical system and exposure controller is established. The exposure synchronic control logic is described with very-high-speed integrated circuit hardware description language （VHDL） and programmed with CPLD , to detect weld pool images at the stage of base current in pulsed MIG welding. Finally, both bead on plate welding and V groove filled welding are carried out, clear and consistent weld pool images are acquired.
基金Supported by National Natural Science Foundation of China (No.60576025).
文摘A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.
文摘We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide(aIGZO) thin-film transistors(TFTs) with a circular structure. The TFT, configured with the inner electrode as source and outer electrode as drain, typically exhibits good saturation electrical characteristics, where the device has a constant drive current despite variations in drain voltage. Due to the very high output resistance exhibited by this asymmetric TFT structure with a circular shape, the pixel circuit considered here in common-drain configuration provides a higher gain of operation than a pixel circuit implemented with rectangular a-IGZO TFTs. They can be used as driving TFTs in active image sensor circuits. They are, therefore,good candidates for digital X-ray detectors in applications such as medical diagnostic procedures.
基金supported by the National Natural Science Foundation of China(No.61575059,No.61675062,No.21501038)the Fundamental Research Funds for the Central Universities(No.JZ2018HGPB0275,No.JZ2018HGTA0220,and No.JZ2018HGXC0001).
文摘In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.
基金Supported by National Natural Science Foundation of China (No.60806010,No.60976030)Tianjin Innovation Special Funds for Science and Technology (No.05FZZDGX00200)
文摘A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correlative double sampling(CDS),pixel FPN is cancelled and column FPN is stored and eliminated by the sampleand-hold operation of digitally programmable gain amplifier(DPGA).The bandwidth balance technology based on operational amplifier(op-amp) sharing is also introduced to decrease the power dissi...
基金Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61036004)the Shenzhen Science & Technology Foundation, China (Grant No. CXB201005250031A)+1 种基金the Fundamental Research Project of Shenzhen Science & Technology Foundation, China (Grant No. JC201005280670A)the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A)
文摘In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 gm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source.
基金supported by the Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology。
文摘A signal chain model of single-bit and multi-bit quanta image sensors(QISs)is established.Based on the proposed model,the photoresponse characteristics and signal error rates of QISs are investigated,and the effects of bit depth,quantum efficiency,dark current,and read noise on them are analyzed.When the signal error rates towards photons and photoelectrons counting are lower than 0.01,the high accuracy photon and photoelectron counting exposure ranges are determined.Furthermore,an optimization method of integration time to ensure that the QIS works in these high accuracy exposure ranges is presented.The trade-offs between pixel area,the mean value of incident photons,and integration time under different illuminance level are analyzed.For the 3-bit QIS with 0.16 e-/s dark current and 0.21 e-r.m.s.read noise,when the illuminance level and pixel area are 1 lux and 1.21μm^(2),or 10000 lux and 0.21μm^(2),the recommended integration time is 8.8 to 30 ms,or 10 to21.3μs,respectively.The proposed method can guide the design and operation of single-bit and multi-bit QISs.
基金the National Natural Science Foundation of China (No.51775020)the Science Challenge Project,China (No.TZ2018007)+1 种基金the National Natural Science Foundation of China (No.62073009)the Fundamental Research Funds for Central Universities,China (No.YWF-19-BJ-J-515).
文摘The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environments,there are radiation related degradation and var-ious uncertainties affecting the positioning accuracy of CMOS image sensors,which further leads to a reliability reduction of CMOS image sensors.Obviously,the reliability of CMOS image sensors is related to their specified function,degradation,and uncertainties;however,current research has not fully described this relationship.In this paper,a comprehensive approach to reliability modelling of CMOs image sensors is proposed based on the reliability science principles.Firstly,the perfor-mance margin modelling of centroid positioning accuracy is conducted.Then,the degradation model of CMOS image sensors is derived considering the dark current increase induced by the total ionizing dose effects.Finally,various uncertainties are analyzed and quantified,and the measure-ment equation of reliability is proposed.A case study of a CMOS image sensor is conducted to apply the proposed method,and the sensitivity analysis can provide suggestions for design and use of CMOS image sensors to ensure reliability.A simulation study is conducted to present the advantages oftheproposed comprehensive approach.
文摘To test high resolution and dynamic performance of star sensor, a method of consideration image motion on Modeling the motion blur of star sensor is proposed. Firstly, image motion geometric model based on the rotation of Starlight vector is studied. Secondly, with the help of the normal distribution of static star image energy model, introducing the star image motion speed, obtaining the energy distribution function of moving stars, implementing high dynamic simulation of star map. Finally, establishing the simulation environment, through adjusting input parameters such as integral time, rate of change of three attitude angle, the launch time, location, then, important simulation data of stars observed by star sensor in orbit can quickly be obtained, such as navigation stars information, value and direction of image motion, intensity distribution, signal to noise ratio. This work is very important to research and evaluate the star image motion compensation algorithm.
文摘This paper designs and implements an image transmission algorithm applied to plant information collection based on the wireless sensor network. It can effectively reduce the volume of transmitted data, low-energy, high-availability image compression algorithm. This algorithm mainly has two aspects of improvement measures: the first is to reduce the number of pixels that transmit images, from interlaced scanning to interlaced neighbor scanning;the second is to use JPEG image compression algorithm [1], changing the value of the quantization table in the algorithm [2]. After image compression, the image data volume is greatly reduced;the transmission efficiency is improved;and the problem of excessive data volume during image transmission is effectively solved.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61372156 and 61405053)the Natural Science Foundation of Zhejiang Province of China(Grant No.LZ13F04001)
文摘The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random telegraph signal noise in the pixel source follower based on the binomial distribution is set up. The number of electrons captured or released by the oxide traps in the unit time is described as the random variables which obey the binomial distribution. As a result,the output states and the corresponding probabilities of the first and the second samples of the correlated double sampling circuit are acquired. The standard deviation of the output states after the correlated double sampling circuit can be obtained accordingly. In the simulation section, one hundred thousand samples of the source follower MOSFET have been simulated,and the simulation results show that the proposed model has the similar statistical characteristics with the existing models under the effect of the channel length and the density of the oxide trap. Moreover, the noise histogram of the proposed model has been evaluated at different environmental temperatures.
