As organic thin film transistors(OTFTs)are set to play a crucial role in flexible and cost-effective electronic applica-tions,this paper investigates a high-mobility 6,13-bis(triisopropylsilylethynyl)pentacene(TIPS-pe...As organic thin film transistors(OTFTs)are set to play a crucial role in flexible and cost-effective electronic applica-tions,this paper investigates a high-mobility 6,13-bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene)OTFT for use in flexi-ble electronics.The development of such high-mobility devices necessitates precise device modeling to support technology opti-misation and circuit design.The details of numerical simulation technique is discussed,in which,the electrical behavior of the device is well captured by fine tuning basic semiconductor equations.This technology computer-aided design(TCAD)has been validated with exprimental data.In addition,we have discussed about compact model fitting of the devices as well as parameter extraction procedure employed.This includes verification of Silvaco ATLAS finite element method(FEM)based results against experimental data gained from fabricated OTFT devices.Simulations for p-type TFT-based inverter are also per-formed to assess the performance of compact model in simple circuit simulation.展开更多
基金The DST government of India is appreciated by the researchers for giving them the early career research grant under the project ECR/2017/000179。
文摘As organic thin film transistors(OTFTs)are set to play a crucial role in flexible and cost-effective electronic applica-tions,this paper investigates a high-mobility 6,13-bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene)OTFT for use in flexi-ble electronics.The development of such high-mobility devices necessitates precise device modeling to support technology opti-misation and circuit design.The details of numerical simulation technique is discussed,in which,the electrical behavior of the device is well captured by fine tuning basic semiconductor equations.This technology computer-aided design(TCAD)has been validated with exprimental data.In addition,we have discussed about compact model fitting of the devices as well as parameter extraction procedure employed.This includes verification of Silvaco ATLAS finite element method(FEM)based results against experimental data gained from fabricated OTFT devices.Simulations for p-type TFT-based inverter are also per-formed to assess the performance of compact model in simple circuit simulation.
