Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silico...Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silicon^([1,2]).As a repre-sentative TMD and a promising 2D channel material for high-performance,scalable p-type transistors,tungsten diselenide(WSe_(2))has attracted considerable academic and industrial interest for its potential in advanced complementary metal−oxide−semiconductor(CMOS)logic technology and in extending Moore’s Law^([3−7]).展开更多
研究了深亚微米pMOS器件的热载流子注入(hot-carrier injection,HCI)和负偏压温度不稳定效应(negative bias temperature instability,NBTI)的耦合效应和物理机制.器件在室温下的损伤特性由HCI效应来控制.高温条件下,器件受到HCI和NBTI...研究了深亚微米pMOS器件的热载流子注入(hot-carrier injection,HCI)和负偏压温度不稳定效应(negative bias temperature instability,NBTI)的耦合效应和物理机制.器件在室温下的损伤特性由HCI效应来控制.高温条件下,器件受到HCI和NBTI效应的共同作用,二者的混合效应表现为NBTI不断增强的HCI效应.在HCI条件下器件的阈值电压漂移依赖沟道长度,而NBTI效应中器件的阈值电压漂移与沟道长度无关,给出了分解HCI和NBTI耦合效应的方法.展开更多
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silicon^([1,2]).As a repre-sentative TMD and a promising 2D channel material for high-performance,scalable p-type transistors,tungsten diselenide(WSe_(2))has attracted considerable academic and industrial interest for its potential in advanced complementary metal−oxide−semiconductor(CMOS)logic technology and in extending Moore’s Law^([3−7]).
文摘研究了深亚微米pMOS器件的热载流子注入(hot-carrier injection,HCI)和负偏压温度不稳定效应(negative bias temperature instability,NBTI)的耦合效应和物理机制.器件在室温下的损伤特性由HCI效应来控制.高温条件下,器件受到HCI和NBTI效应的共同作用,二者的混合效应表现为NBTI不断增强的HCI效应.在HCI条件下器件的阈值电压漂移依赖沟道长度,而NBTI效应中器件的阈值电压漂移与沟道长度无关,给出了分解HCI和NBTI耦合效应的方法.
