Based on the principle of thermal conduction, three metal alloys （stainless steel, copper-tungsten and graphite） were chosen as the material of the high impulse current discharging switch. Experimental results indic...Based on the principle of thermal conduction, three metal alloys （stainless steel, copper-tungsten and graphite） were chosen as the material of the high impulse current discharging switch. Experimental results indicate that the mass loss and surface erosion morphology of the electrode are related with the electrode material （conductivity σ, melting point Tin, density p and thermal capacity c） and the impulse transferred charge （or energy） per impulse for the same total impulse transferred charge. The experimental results indicate that the mass loss of stainless steel, copper-tungsten and graphite are 380.10 μg/C, 118.10 μg/C and 81.90 μg/C respectively under the condition of a total impulse transferred charge of 525 C and a transferred charge per impulse of 10.5 C. Under the same impulse transferred charge, the mass loss of copper-tungsten（118.10 μg/C） with the transferred charge per impulse at 10.5 C is far larger than the mass loss （38.61μg/C） at a 1.48 C transferred charge per impulse. The electrode erosion mechanism under high energy impulse arcs is analyzed briefly and it is suggested that by selecting high conductive metal or metal alloy as the electrode material of a high energy impulse spark gap switch and setting high erosion resistance material at the top of the electrode, the mass loss of the electrode can be reduced and the life of the switch prolonged.展开更多
Plasma jet triggered gas gap switch has obvious advantages in fast control switch.The development of the plasma in the ambient medium is the key factor affecting the triggering conduction of the gas switch.However,the...Plasma jet triggered gas gap switch has obvious advantages in fast control switch.The development of the plasma in the ambient medium is the key factor affecting the triggering conduction of the gas switch.However,the plasma jet process and its characteristic parameters are complicated and the existing test methods cannot fully characterize its development laws.In this work,a two-dimensional transient fluid calculation model of the plasma jet process of the gas gap switch is established based on the renormalization-group k-εturbulence equation.The results show that the characteristic parameters and morphological evolution of the plasma jet are basically consistent with the experimental results,which verifies the accuracy of the simulation model calculation.The plasma jet is a long strip with an initial velocity of 1.0 km·s-1and develops in both axial and radial directions.The jet velocity fluctuates significantly with axial height.As the plasma jet enters the main gap,the pressure inside the trigger cavity drops by80%,resulting in a rapid drop in the jet velocity.When the plasma jet head interacts with the atmosphere,the two-phase fluid compresses each other,generating a forward-propelled pressure wave.The plasma jet heads flow at high velocity,a negative pressure zone is formed in the middle part of the jet,and the pressure peak decreases gradually with height.As the value of the inlet pressure increases,the characteristic parameters of the plasma jet increase.The entrainment phenomenon is evident,which leads to an increase in the pressure imbalance of the atmospheric gas medium,leading to a significant Coanda effect.Compared with air,the characteristic parameters of a plasma jet in SF6are lower,and the morphological evolution is significantly suppressed.The results of this study can provide some insight into the mechanism of action of the switch jet plasma development process.展开更多
The trigger characteristics of a multi-gap gas switch with double insulating layers,a square-groove electrode supporter and a UV pre-ionizing structure are investigated aided by a high sensitivity fiber-bundle array d...The trigger characteristics of a multi-gap gas switch with double insulating layers,a square-groove electrode supporter and a UV pre-ionizing structure are investigated aided by a high sensitivity fiber-bundle array detector, a UV fiber detector, and a framing camera, in addition to standard electrical diagnostics. The fiber-bundle-array detector is used to track the turn-on sequence of each electrode gap at a timing precision of 0.6 ns. Each fiber bundle, including five fibers with different azimuth angles, aims at the whole emitting area of each electrode gap and is fed to a photomultiplier tube. The UV fiber detector with a spectrum response of 260-320 nm,including a fused-quartz fiber of 200 μm in diameter and a solar-blinded photomultiplier tube, is adopted to study the effect of UV pre-ionizing on trigger characteristics. The framing camera,with a capacity of 4 frames per shot and an exposure time of 5 ns, is employed to capture the evolution of channel arcs. Based on the turn-on light signal of each electrode gap, the breakdown delay is divided into statistical delay and formative delay. A decrease in both of them, a smaller switch jitter and more channel arcs are observed with lower gas pressure. An increase in trigger voltage can reduce the statistical delay and its jitter, while higher trigger voltage has a relatively small influence on the formative delay and the number of channel arcs. With the UV pre-ionizing structure at 0.24 MPa gas pressure and 60 kV trigger voltage, the statistical delay and its jitter can be reduced by 1.8 ns and 0.67 ns, while the formative delay and its jitter can only be reduced by 0.5 ns and 0.25 ns.展开更多
Gas pressurized closing switches are one of the most important elements in FLTD-based systems. Improving the trigger performance of gas switches is useful for optimizing the output parameters and the reliability of th...Gas pressurized closing switches are one of the most important elements in FLTD-based systems. Improving the trigger performance of gas switches is useful for optimizing the output parameters and the reliability of the FLTD. In this paper, the breakdown characteristics of the trigger gap and the overvoltage gap are studied experimentally. The reasons for the different breakdown performance of the two gaps are also investigated. The results show that the breakdown delay of the trigger gap is more influenced by the trigger voltage, while the breakdown delay of the overvoltage gap is more influenced by the working coefficient and always higher than that of the trigger gap. The jitter of the trigger gap is more influenced by the trigger voltage and accounts more than 60% of the total switch jitter, while the jitter of the overvoltage gap is hardly changed with the trigger voltage as well as the working coefficient and maintains less than 1.4 ns. It is proved that the discharging product from the trigger gap can effectively reduce the breakdown delay and jitter of the overvoltage gap. Based on that, the effect and improvement of pre-ionization on the two gaps are also studied. It is concluded that the jitter of the trigger gap reduces obviously when the pre-ionization is added, while the pre-ionization almost has no effect on the jitter of the overvoltage gap. The jitter of the overvoltage gap is about two times higher than the trigger gap in the pre-ionizing switch.展开更多
Breakdown characteristics of a gap breakdown load was investigated in this paper, and a reversely switched dynistor （RSD） discharge circuit was designed based on the load. Based on the characteristics of the load, t...Breakdown characteristics of a gap breakdown load was investigated in this paper, and a reversely switched dynistor （RSD） discharge circuit was designed based on the load. Based on the characteristics of the load, the RSD discharge circuit was improved and optimized. The volume of the magnetic switch was reduced. To protect the thyristor and RSD, a diode was anti- parallely connected with the thyristor, which reduced the time requirement when a power voltage was applied to RSD. Experimental results show the circuit designed in this paper can switch a high voltage and high current smoothly, and allows the power voltage to change in a wider range.展开更多
Structural design and tests on the characteristics of the SF6 gas switch with a small gap are presented. This kind of switch often works under high pressure and nanosecond pulse for getting pulse with faster risetime....Structural design and tests on the characteristics of the SF6 gas switch with a small gap are presented. This kind of switch often works under high pressure and nanosecond pulse for getting pulse with faster risetime. The breakdown voltage and breakdown delay of a number of switches with different geometries, gas pressures and pulse waveforms were investigated. Experimental results suggested that the breakdown voltage increases linearly with the gas pressure, and the breakdown delay decreases with an increase in the gas pressure and a reduction in the gap distance of the switch under the same applied pulse. By using this kind of switch with a gap of 3 mm as a peaking switch, a pulse generator can provide an output voltage with a peak voltage of 300 kV and a risetime of 3 ns on a resistance load of 150Ω.展开更多
A multi-gap and multi-channel gas switch with convexo-convex discal planet electrodes was designed and investigated. Eight gaps are formed in series by a trigger electrode, six intermediate electrodes and two high vol...A multi-gap and multi-channel gas switch with convexo-convex discal planet electrodes was designed and investigated. Eight gaps are formed in series by a trigger electrode, six intermediate electrodes and two high voltage electrodes with a uniform gap length of 5 ram. The self breakdown and triggered breakdown performance of the switch are reported. Both the delay time and jitter decrease with the increase in the trigger voltage, switching coefficient and the decrease in the trigger isolating resistor. The delay time of the switch is about 40 ns, and the jitter is less than 2 ns when charged with 4-85 kV and triggered by a voltage pule of -75 kV. The inductance of the switch is about 30 nH.展开更多
A metal foil spark gap switch is fabricated by using magnetron sputtering deposition technology and standard microelectronic technology. The switch has two main electrodes and a trigger electrode. Stylus profiler is e...A metal foil spark gap switch is fabricated by using magnetron sputtering deposition technology and standard microelectronic technology. The switch has two main electrodes and a trigger electrode. Stylus profiler is employed to measure the distance between the main electrodes and the dimensions of the trigger electrode. The discharge characteristics of the metal foil spark gap switch are discussed. The switch has short delay time and low time jitter. When it is fired by a conventional capacitive discharge unit (CDU), the firing circuit has low inductance and resistance. Because of its low profile structure, it can be easily integrated with the bridge foil used in a conventional exploding foil initiator system (EFIS).展开更多
Considering the effect of crack gap, the bending deformation of the Timoshenko beam with switching cracks is studied. To represent a crack with gap as a nonlinear unidirectional rotational spring, the equivalent flexu...Considering the effect of crack gap, the bending deformation of the Timoshenko beam with switching cracks is studied. To represent a crack with gap as a nonlinear unidirectional rotational spring, the equivalent flexural rigidity of the cracked beam is derived with the generalized Dirac delta function. A closed-form general solution is obtained for bending of a Timoshenko beam with an arbitrary number of switching cracks. Three examples of bending of the Timoshenko beam are presented. The influence of the beam＇s slenderness ratio, the crack＇s depth, and the external load on the crack state and bending performances of the cracked beam is analyzed. It is revealed that a cusp exists on the deflection curve, and a jump on the rotation angle curve occurs at a crack location. The relation between the beam＇s deflection and load is bilinear, each part corresponding to an open or closed state of crack, respectively. When the crack is open, flexibility of the cracked beam decreases with the increase of the beam＇s slenderness ratio and the decrease of the crack depth. The results are useful in identifying non-destructive cracks on a beam.展开更多
In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on out...In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.展开更多
文摘Based on the principle of thermal conduction, three metal alloys （stainless steel, copper-tungsten and graphite） were chosen as the material of the high impulse current discharging switch. Experimental results indicate that the mass loss and surface erosion morphology of the electrode are related with the electrode material （conductivity σ, melting point Tin, density p and thermal capacity c） and the impulse transferred charge （or energy） per impulse for the same total impulse transferred charge. The experimental results indicate that the mass loss of stainless steel, copper-tungsten and graphite are 380.10 μg/C, 118.10 μg/C and 81.90 μg/C respectively under the condition of a total impulse transferred charge of 525 C and a transferred charge per impulse of 10.5 C. Under the same impulse transferred charge, the mass loss of copper-tungsten（118.10 μg/C） with the transferred charge per impulse at 10.5 C is far larger than the mass loss （38.61μg/C） at a 1.48 C transferred charge per impulse. The electrode erosion mechanism under high energy impulse arcs is analyzed briefly and it is suggested that by selecting high conductive metal or metal alloy as the electrode material of a high energy impulse spark gap switch and setting high erosion resistance material at the top of the electrode, the mass loss of the electrode can be reduced and the life of the switch prolonged.
基金supported by National Natural Science Foundation of China(No.52107142)。
文摘Plasma jet triggered gas gap switch has obvious advantages in fast control switch.The development of the plasma in the ambient medium is the key factor affecting the triggering conduction of the gas switch.However,the plasma jet process and its characteristic parameters are complicated and the existing test methods cannot fully characterize its development laws.In this work,a two-dimensional transient fluid calculation model of the plasma jet process of the gas gap switch is established based on the renormalization-group k-εturbulence equation.The results show that the characteristic parameters and morphological evolution of the plasma jet are basically consistent with the experimental results,which verifies the accuracy of the simulation model calculation.The plasma jet is a long strip with an initial velocity of 1.0 km·s-1and develops in both axial and radial directions.The jet velocity fluctuates significantly with axial height.As the plasma jet enters the main gap,the pressure inside the trigger cavity drops by80%,resulting in a rapid drop in the jet velocity.When the plasma jet head interacts with the atmosphere,the two-phase fluid compresses each other,generating a forward-propelled pressure wave.The plasma jet heads flow at high velocity,a negative pressure zone is formed in the middle part of the jet,and the pressure peak decreases gradually with height.As the value of the inlet pressure increases,the characteristic parameters of the plasma jet increase.The entrainment phenomenon is evident,which leads to an increase in the pressure imbalance of the atmospheric gas medium,leading to a significant Coanda effect.Compared with air,the characteristic parameters of a plasma jet in SF6are lower,and the morphological evolution is significantly suppressed.The results of this study can provide some insight into the mechanism of action of the switch jet plasma development process.
基金supported by National Natural Science Foundation of China(No.11105109)
文摘The trigger characteristics of a multi-gap gas switch with double insulating layers,a square-groove electrode supporter and a UV pre-ionizing structure are investigated aided by a high sensitivity fiber-bundle array detector, a UV fiber detector, and a framing camera, in addition to standard electrical diagnostics. The fiber-bundle-array detector is used to track the turn-on sequence of each electrode gap at a timing precision of 0.6 ns. Each fiber bundle, including five fibers with different azimuth angles, aims at the whole emitting area of each electrode gap and is fed to a photomultiplier tube. The UV fiber detector with a spectrum response of 260-320 nm,including a fused-quartz fiber of 200 μm in diameter and a solar-blinded photomultiplier tube, is adopted to study the effect of UV pre-ionizing on trigger characteristics. The framing camera,with a capacity of 4 frames per shot and an exposure time of 5 ns, is employed to capture the evolution of channel arcs. Based on the turn-on light signal of each electrode gap, the breakdown delay is divided into statistical delay and formative delay. A decrease in both of them, a smaller switch jitter and more channel arcs are observed with lower gas pressure. An increase in trigger voltage can reduce the statistical delay and its jitter, while higher trigger voltage has a relatively small influence on the formative delay and the number of channel arcs. With the UV pre-ionizing structure at 0.24 MPa gas pressure and 60 kV trigger voltage, the statistical delay and its jitter can be reduced by 1.8 ns and 0.67 ns, while the formative delay and its jitter can only be reduced by 0.5 ns and 0.25 ns.
基金supported by the Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (No. SKLIPR1601)
文摘Gas pressurized closing switches are one of the most important elements in FLTD-based systems. Improving the trigger performance of gas switches is useful for optimizing the output parameters and the reliability of the FLTD. In this paper, the breakdown characteristics of the trigger gap and the overvoltage gap are studied experimentally. The reasons for the different breakdown performance of the two gaps are also investigated. The results show that the breakdown delay of the trigger gap is more influenced by the trigger voltage, while the breakdown delay of the overvoltage gap is more influenced by the working coefficient and always higher than that of the trigger gap. The jitter of the trigger gap is more influenced by the trigger voltage and accounts more than 60% of the total switch jitter, while the jitter of the overvoltage gap is hardly changed with the trigger voltage as well as the working coefficient and maintains less than 1.4 ns. It is proved that the discharging product from the trigger gap can effectively reduce the breakdown delay and jitter of the overvoltage gap. Based on that, the effect and improvement of pre-ionization on the two gaps are also studied. It is concluded that the jitter of the trigger gap reduces obviously when the pre-ionization is added, while the pre-ionization almost has no effect on the jitter of the overvoltage gap. The jitter of the overvoltage gap is about two times higher than the trigger gap in the pre-ionizing switch.
基金supported by National Natural Science Foundation of China (No. 50907025)China Postdoctoral Science Foundation (No. 20080440931)
文摘Breakdown characteristics of a gap breakdown load was investigated in this paper, and a reversely switched dynistor （RSD） discharge circuit was designed based on the load. Based on the characteristics of the load, the RSD discharge circuit was improved and optimized. The volume of the magnetic switch was reduced. To protect the thyristor and RSD, a diode was anti- parallely connected with the thyristor, which reduced the time requirement when a power voltage was applied to RSD. Experimental results show the circuit designed in this paper can switch a high voltage and high current smoothly, and allows the power voltage to change in a wider range.
基金supported by National Natural Science Foundation of China (No. 50437030)
文摘Structural design and tests on the characteristics of the SF6 gas switch with a small gap are presented. This kind of switch often works under high pressure and nanosecond pulse for getting pulse with faster risetime. The breakdown voltage and breakdown delay of a number of switches with different geometries, gas pressures and pulse waveforms were investigated. Experimental results suggested that the breakdown voltage increases linearly with the gas pressure, and the breakdown delay decreases with an increase in the gas pressure and a reduction in the gap distance of the switch under the same applied pulse. By using this kind of switch with a gap of 3 mm as a peaking switch, a pulse generator can provide an output voltage with a peak voltage of 300 kV and a risetime of 3 ns on a resistance load of 150Ω.
基金supported by National Natural Science Foundation of China(Nos.50477019,50637010)the State Key Laboratory of Electrical Insulation and Power Equipment of China(EIPE.09207)
文摘A multi-gap and multi-channel gas switch with convexo-convex discal planet electrodes was designed and investigated. Eight gaps are formed in series by a trigger electrode, six intermediate electrodes and two high voltage electrodes with a uniform gap length of 5 ram. The self breakdown and triggered breakdown performance of the switch are reported. Both the delay time and jitter decrease with the increase in the trigger voltage, switching coefficient and the decrease in the trigger isolating resistor. The delay time of the switch is about 40 ns, and the jitter is less than 2 ns when charged with 4-85 kV and triggered by a voltage pule of -75 kV. The inductance of the switch is about 30 nH.
文摘A metal foil spark gap switch is fabricated by using magnetron sputtering deposition technology and standard microelectronic technology. The switch has two main electrodes and a trigger electrode. Stylus profiler is employed to measure the distance between the main electrodes and the dimensions of the trigger electrode. The discharge characteristics of the metal foil spark gap switch are discussed. The switch has short delay time and low time jitter. When it is fired by a conventional capacitive discharge unit (CDU), the firing circuit has low inductance and resistance. Because of its low profile structure, it can be easily integrated with the bridge foil used in a conventional exploding foil initiator system (EFIS).
文摘Considering the effect of crack gap, the bending deformation of the Timoshenko beam with switching cracks is studied. To represent a crack with gap as a nonlinear unidirectional rotational spring, the equivalent flexural rigidity of the cracked beam is derived with the generalized Dirac delta function. A closed-form general solution is obtained for bending of a Timoshenko beam with an arbitrary number of switching cracks. Three examples of bending of the Timoshenko beam are presented. The influence of the beam＇s slenderness ratio, the crack＇s depth, and the external load on the crack state and bending performances of the cracked beam is analyzed. It is revealed that a cusp exists on the deflection curve, and a jump on the rotation angle curve occurs at a crack location. The relation between the beam＇s deflection and load is bilinear, each part corresponding to an open or closed state of crack, respectively. When the crack is open, flexibility of the cracked beam decreases with the increase of the beam＇s slenderness ratio and the decrease of the crack depth. The results are useful in identifying non-destructive cracks on a beam.
文摘In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.
