Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si, Al films deposited on n-Si (Al/n-Si) and glass (SiO2) (Al/glass) substrates, using pulsed rf supermagnetron plasma chemical vapor deposition (...Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si, Al films deposited on n-Si (Al/n-Si) and glass (SiO2) (Al/glass) substrates, using pulsed rf supermagnetron plasma chemical vapor deposition (CVD) with N2/i-C4H10 mixed gases. The rf powers (13.56 MHz) of both the upper and lower electrodes were modulated by a 2.5-kHz pulse at a duty ratio of 12.5%. N2 gas concentration was controlled at 70%. The optical band gap of a-CNx:H films was about 0.75 eV. The a-CNx:H films deposited on substrates of p-Si, Al/n-Si and Al/glass showed low threshold emission electric fields (ETH) of 10, 13 and 12 V/μm, respectively. The a-CNx:H film deposited on low-cost Al film (Al/glass) showed a sufficiently low ETH of 12 V/μm, eliminating the need for high-cost p-Si substrates.展开更多
Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si wafers set on a lower elec-trode by pulsed supermagnetron plasma CVD using i-C4H10 and N2 gases. Lower electrode RF power (LORF) of 13.56 MHz (...Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si wafers set on a lower elec-trode by pulsed supermagnetron plasma CVD using i-C4H10 and N2 gases. Lower electrode RF power (LORF) of 13.56 MHz (50 - 800 W) was modulated by a 2.5-kHz pulse at a duty ratio of 12.5%, and upper electrode RF power (UPRF) of 50 - 400 W was supplied continuously. The optical band gap decreased with an increase in LORF at each UPRF. The open circuit voltage of Au/a-CNx:H/p-Si photovoltaic cells (a-CNx:H film thickness: 25 nm) was about 200 mV for each cell, and the short circuit current density and energy conversion efficiency increased with LORF for each UPRF. The highest energy conversion efficiency of 0.81% was obtained at UPRF/LORF of 200/800 W.展开更多
By generating closed-loop electron E × B drift over the front and back surface of a band magnetron cathode, a uniform magnetron plasma can be formed over the front surface. Here, we attempted to generate a unifor...By generating closed-loop electron E × B drift over the front and back surface of a band magnetron cathode, a uniform magnetron plasma can be formed over the front surface. Here, we attempted to generate a uniform supermagnetron plasma under a stationary magnetic field by situating two such band magnetron cathodes face-to-face in parallel. Performing uniform supermagnetron plasma chemical vapor deposition (CVD) with tetraethylorthosilicate (TEOS)/O2 CVD, SiO2 films with good uniformity (±5%) at the central region of the cathode could be achieved under a stationary magnetic field of about 160 G. Using this supermagnetron plasma CVD apparatus, a-CNx:H films were then deposited to investigate their characteristics using isobutane (i-C4H10)/N2 mixed gases. A relatively high deposition rate of about 100 nm/min was obtained. The a-CNx:H films obtained had a hardness of about 25 GPa, higher than that of glass (22 GPa).展开更多
Hydrogenated amorphous carbon nitride (a-CN<sub>x</sub>:H) films were formed on Al films deposited on Si or glass (SiO<sub>2</sub>) substrates, using pulsed radio frequency (PRF) supermagnetron...Hydrogenated amorphous carbon nitride (a-CN<sub>x</sub>:H) films were formed on Al films deposited on Si or glass (SiO<sub>2</sub>) substrates, using pulsed radio frequency (PRF) supermagnetron plasma (SMP) chemical vapor deposition (CVD) with N<sub>2</sub>/i-C<sub>4</sub>H<sub>10</sub> mixed gases. a-CN<sub>x</sub>:H films were grown under the upper and lower electrode RF powers (13.56 MHz) of continuous and pulsed conditions, respectively, which showed low band gap of about 0.7 eV. a-CN<sub>x</sub>:H films deposited on the Al/Si or Al/SiO<sub>2</sub> substrates showed same low threshold emission electric field (ETH) of 12 V/μm. Multiple layer of Al or ITO (anode)/50nm-SiO<sub>2</sub>/a-CN<sub>x</sub>:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CN<sub>x</sub>:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron conduction models were proposed for the active states of both the field emission and FN tunneling devices and photovoltaic cells.展开更多
文摘Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si, Al films deposited on n-Si (Al/n-Si) and glass (SiO2) (Al/glass) substrates, using pulsed rf supermagnetron plasma chemical vapor deposition (CVD) with N2/i-C4H10 mixed gases. The rf powers (13.56 MHz) of both the upper and lower electrodes were modulated by a 2.5-kHz pulse at a duty ratio of 12.5%. N2 gas concentration was controlled at 70%. The optical band gap of a-CNx:H films was about 0.75 eV. The a-CNx:H films deposited on substrates of p-Si, Al/n-Si and Al/glass showed low threshold emission electric fields (ETH) of 10, 13 and 12 V/μm, respectively. The a-CNx:H film deposited on low-cost Al film (Al/glass) showed a sufficiently low ETH of 12 V/μm, eliminating the need for high-cost p-Si substrates.
文摘Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si wafers set on a lower elec-trode by pulsed supermagnetron plasma CVD using i-C4H10 and N2 gases. Lower electrode RF power (LORF) of 13.56 MHz (50 - 800 W) was modulated by a 2.5-kHz pulse at a duty ratio of 12.5%, and upper electrode RF power (UPRF) of 50 - 400 W was supplied continuously. The optical band gap decreased with an increase in LORF at each UPRF. The open circuit voltage of Au/a-CNx:H/p-Si photovoltaic cells (a-CNx:H film thickness: 25 nm) was about 200 mV for each cell, and the short circuit current density and energy conversion efficiency increased with LORF for each UPRF. The highest energy conversion efficiency of 0.81% was obtained at UPRF/LORF of 200/800 W.
文摘By generating closed-loop electron E × B drift over the front and back surface of a band magnetron cathode, a uniform magnetron plasma can be formed over the front surface. Here, we attempted to generate a uniform supermagnetron plasma under a stationary magnetic field by situating two such band magnetron cathodes face-to-face in parallel. Performing uniform supermagnetron plasma chemical vapor deposition (CVD) with tetraethylorthosilicate (TEOS)/O2 CVD, SiO2 films with good uniformity (±5%) at the central region of the cathode could be achieved under a stationary magnetic field of about 160 G. Using this supermagnetron plasma CVD apparatus, a-CNx:H films were then deposited to investigate their characteristics using isobutane (i-C4H10)/N2 mixed gases. A relatively high deposition rate of about 100 nm/min was obtained. The a-CNx:H films obtained had a hardness of about 25 GPa, higher than that of glass (22 GPa).
文摘Hydrogenated amorphous carbon nitride (a-CN<sub>x</sub>:H) films were formed on Al films deposited on Si or glass (SiO<sub>2</sub>) substrates, using pulsed radio frequency (PRF) supermagnetron plasma (SMP) chemical vapor deposition (CVD) with N<sub>2</sub>/i-C<sub>4</sub>H<sub>10</sub> mixed gases. a-CN<sub>x</sub>:H films were grown under the upper and lower electrode RF powers (13.56 MHz) of continuous and pulsed conditions, respectively, which showed low band gap of about 0.7 eV. a-CN<sub>x</sub>:H films deposited on the Al/Si or Al/SiO<sub>2</sub> substrates showed same low threshold emission electric field (ETH) of 12 V/μm. Multiple layer of Al or ITO (anode)/50nm-SiO<sub>2</sub>/a-CN<sub>x</sub>:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CN<sub>x</sub>:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron conduction models were proposed for the active states of both the field emission and FN tunneling devices and photovoltaic cells.
