The well number and the cavity length of 1.55μm wavelength In 1-x-y Ga y Al x As MQW DFB lasers are optimized using a simple model.A low threshold,maximum operating temperature of 550～560K,and high relaxat...The well number and the cavity length of 1.55μm wavelength In 1-x-y Ga y Al x As MQW DFB lasers are optimized using a simple model.A low threshold,maximum operating temperature of 550～560K,and high relaxation oscillation frequency of over 30GHz MQW DFB laser is presented.展开更多
The relationship between gain and carrier density is analysed. In the quantum well (QW) lasers, initially, the gain increases rapidly with the carrier density and then starts to saturate. It can be seen that QW lasers...The relationship between gain and carrier density is analysed. In the quantum well (QW) lasers, initially, the gain increases rapidly with the carrier density and then starts to saturate. It can be seen that QW lasers have a higher differential gain because of the step-like state density, and that the gain saturates at higher carrier densities because of the constant state density of the lowest subband. It is shown that simple logarithmic gain-carrier density is more accurate than the traditional linearized form for a QW laser.展开更多
分析了梯度折射率分别限制单量子阱 (GRIN-SCH-SQW)结构的特点以及对大功率半导体激光器特性的影响。利用分子束外延系统生长 Ga Al As/Ga As GRIN-SCH-SQW结构 ,经光荧光谱、X-射线双晶衍射、和载流子浓度测试 ,结果表明 ,该结构各参...分析了梯度折射率分别限制单量子阱 (GRIN-SCH-SQW)结构的特点以及对大功率半导体激光器特性的影响。利用分子束外延系统生长 Ga Al As/Ga As GRIN-SCH-SQW结构 ,经光荧光谱、X-射线双晶衍射、和载流子浓度测试 ,结果表明 ,该结构各参数均满足设计要求。应用此结构制成激光器阵列 ,室温准连续输出功率达5 8W(t=2 0 0 μs,f=5 0 Hz) ,峰值波长为 80 8nm。展开更多
为了研制满足光纤通讯需求的高性能半导体激光器,对压应变In Ga As Sb/Ga As Sb量子阱激光器有源区进行了研究。根据应变量子阱能带理论、固体模型理论和克龙尼克-潘纳模型,确定了激射波长与量子阱材料组分及阱宽的关系。基于Lastip软...为了研制满足光纤通讯需求的高性能半导体激光器,对压应变In Ga As Sb/Ga As Sb量子阱激光器有源区进行了研究。根据应变量子阱能带理论、固体模型理论和克龙尼克-潘纳模型,确定了激射波长与量子阱材料组分及阱宽的关系。基于Lastip软件建立了条宽为50μm、腔长为800μm的半导体激光器仿真模型,模拟器件的输出特性,讨论了量子阱个数对器件光电特性的影响。结果表明:当量子阱组分为In0.44Ga0.56As0.92Sb0.08/Ga As0.92Sb0.08、阱宽为9 nm、量子阱个数为2时,器件的性能达到最佳,阈值电流为48 m A,斜率效率为0.76 W/A。展开更多
文摘The well number and the cavity length of 1.55μm wavelength In 1-x-y Ga y Al x As MQW DFB lasers are optimized using a simple model.A low threshold,maximum operating temperature of 550～560K,and high relaxation oscillation frequency of over 30GHz MQW DFB laser is presented.
文摘The relationship between gain and carrier density is analysed. In the quantum well (QW) lasers, initially, the gain increases rapidly with the carrier density and then starts to saturate. It can be seen that QW lasers have a higher differential gain because of the step-like state density, and that the gain saturates at higher carrier densities because of the constant state density of the lowest subband. It is shown that simple logarithmic gain-carrier density is more accurate than the traditional linearized form for a QW laser.
文摘为了研制满足光纤通讯需求的高性能半导体激光器,对压应变In Ga As Sb/Ga As Sb量子阱激光器有源区进行了研究。根据应变量子阱能带理论、固体模型理论和克龙尼克-潘纳模型,确定了激射波长与量子阱材料组分及阱宽的关系。基于Lastip软件建立了条宽为50μm、腔长为800μm的半导体激光器仿真模型,模拟器件的输出特性,讨论了量子阱个数对器件光电特性的影响。结果表明:当量子阱组分为In0.44Ga0.56As0.92Sb0.08/Ga As0.92Sb0.08、阱宽为9 nm、量子阱个数为2时,器件的性能达到最佳,阈值电流为48 m A,斜率效率为0.76 W/A。
