Strained germanium hole spin qubits are promising for quantum computing,but the devices hosting these qubits face challenges from high interface trap density,which originates from the naturally oxidized surface of the...Strained germanium hole spin qubits are promising for quantum computing,but the devices hosting these qubits face challenges from high interface trap density,which originates from the naturally oxidized surface of the wafer.These traps can degrade the device stability and cause an excessively high threshold voltage.Surface passivation is regarded as an effective method to mitigate these impacts.In this study,we perform low-thermal-budget chemical passivation using the nitric acid oxidation of silicon method on the surface of strained germanium devices and investigate the impact of passivation on the device stability.The results demonstrate that surface passivation effectively reduces the interface defect density.This not only improves the stability of the device's threshold voltage but also enhances its long-term static stability.Furthermore,we construct a band diagram of hole surface tunneling at the static operating point to gain a deeper understanding of the physical mechanism through which passivation affects the device stability.This study provides valuable insights for future optimization of strained Ge-based quantum devices and advances our understanding of how interface states affect device stability.展开更多
Mechanical strain can induce noteworthy structural and electronic changes in vanadium dioxide, imparting substantial scientific importance to both the exploration of phase transitions and the development of potential ...Mechanical strain can induce noteworthy structural and electronic changes in vanadium dioxide, imparting substantial scientific importance to both the exploration of phase transitions and the development of potential technological applications. Unlike the traditional rutile(R) phase, bronze-phase vanadium dioxide [VO_(2)(B)] exhibits an in-plane anisotropic structure. When subjected to stretching along distinct crystallographic axes, VO_(2)(B) may further manifest the axial dependence in lattice–electron interactions, which is beneficial for gaining insights into the anisotropy of electronic transport.Here, we report an anisotropic room-temperature metal–insulator transition in single-crystal VO_(2)(B) by applying in-situ uniaxial tensile strain. This material exhibits significantly different electromechanical responses along two anisotropic axes.We reveal that such an anisotropic electromechanical response mainly arises from the preferential arrangement of a straininduced unidirectional stripe state in the conductive channel. This insulating stripe state could be attributed to the in-plane dimerization within the distorted zigzag chains of vanadium atoms, evidenced by strain-modulated Raman spectra. Our work may open up a promising avenue for exploiting the anisotropy of metal–insulator transition in vanadium dioxide for potential technological applications.展开更多
Materials with kagome lattices have attracted significant research attention due to their nontrivial features in energy bands.We theoretically investigate the evolution of electronic band structures of kagome lattices...Materials with kagome lattices have attracted significant research attention due to their nontrivial features in energy bands.We theoretically investigate the evolution of electronic band structures of kagome lattices in response to uniaxial strain using both a tight-binding model and an antidot model based on a periodic muffin-tin potential.It is found that the Dirac points move with applied strain.Furthermore,the flat band of unstrained kagome lattices is found to develop into a highly anisotropic shape under a stretching strain along y direction,forming a partially flat band with a region dispersionless along ky direction while dispersive along kx direction.Our results shed light on the possibility of engineering the electronic band structures of kagome materials by mechanical strain.展开更多
The Türkiye earthquake sequence on February 6, 2023, was featured by the closely located earthquake doublet of M_(W)7.8 and M_(W)7.5. The consequent strong ground motions are supposed to be able to impose high de...The Türkiye earthquake sequence on February 6, 2023, was featured by the closely located earthquake doublet of M_(W)7.8 and M_(W)7.5. The consequent strong ground motions are supposed to be able to impose high demands on the ultra-low-cycle fatigue performance of metallic dampers in buildings, including the widely used buckling restrained braces. This study evaluates the cumulative plastic deformation(CPD) demands on bucklingrestrained braces(BRBs) in multi-story buildings imposed by the strong ground motions in the 2023 Türkiye earthquake doublet. Thirty-two records of the highest peak ground accelerations were selected from the strong motion database. Among them, eight captured the ground motions during both events, and the rest only captured the shaking of either of the events. The CPD demands on the BRBs in reinforced concrete frames with various fundamental periods, brace-to-frame stiffness ratios, and BRB ductility ratio are calculated by nonlinear time history analyses and are summarized in the form of enveloped spectra of CPD ratios at constant ductility. The results show that the CPD demands on BRBs increase with smaller brace-toframe stiffness ratios and larger BRB ductility ratios. The enveloped CPD demands are several hundreds of times the nominal yield deformation of the BRB, which are much higher than the CPD demands for the calibration tests of BRBs stipulated by AISC 341 in the US.展开更多
The fabrication and characterization of strained-Si material grown on a relaxed Si0.79 Ge0.21/graded Si1-x- Gex/Si virtual substrate, using reduced pressure chemical vapor deposition, are presented. The Ge concentrati...The fabrication and characterization of strained-Si material grown on a relaxed Si0.79 Ge0.21/graded Si1-x- Gex/Si virtual substrate, using reduced pressure chemical vapor deposition, are presented. The Ge concentration of the constant composition SiGe layer and the grading rate of the graded SiGe layer are estimated with double-crystal X-ray diffraction and further confirmed by SIMS measurements. The surface root mean square roughness of the strained Si cap layer is 2.36nm,and the strain is about 0.83% as determined by atomic force microscopy and Raman spectra, respectively. The threading dislocation density is on the order of 4 × 10^4cm^-2. Furthermore, it is found that the stress in the strained Si cap layer is maintained even after the high thermal budget process, nMOSFET devices are fabricated and measured in strained-Si and unstrained bulk-Si channels. Compared to the co-processed bulk-Si MOSFETs at room temperature,a significant low vertical field mobility enhancement of about 85% is observed in the strained-Si devices.展开更多
We investigate the binding energies of excitons in a strained （111）-oriented zinc-blende GaN/Al0.3 Ga0.7 N quantum well screened by the electron-hole （e-h） gas under hydrostatic pressure by combining a variational...We investigate the binding energies of excitons in a strained （111）-oriented zinc-blende GaN/Al0.3 Ga0.7 N quantum well screened by the electron-hole （e-h） gas under hydrostatic pressure by combining a variational method and a selfconsistent procedure. A built-in electric field produced by the strain-induced piezoelectric polarization is considered in our calculations. The result indicates that the binding energies of excitons increase nearly linearly with pressure,even though the modification of strain with hydrostatic pressure is considered, and the influence of pressure is more apparent under higher e-h densities. It is also found that as the density of an e-h gas increases,the binding energies first increase slowly to a maximum and then decrease rapidly when the e-h density is larger than about 1 ×10^11 cm^-2. The excitonic binding energies increase obviously as the barrier thickness decreases due to the decrease of the built-in electric field.展开更多
Based on an analysis of symmetry, the dispersion relations near the Ai valley in strained Si1-x Gex （0≤x〈0.45）/ （001）, （111）, （101）Si are derived using the KP method with perturbation theory. These relations...Based on an analysis of symmetry, the dispersion relations near the Ai valley in strained Si1-x Gex （0≤x〈0.45）/ （001）, （111）, （101）Si are derived using the KP method with perturbation theory. These relations demonstrate that △^i levels in strained Si1-x Gex are different from the △1 level in relaxed Si1-x Gex, while the longitudinal and transverse masses （m1^＊ and mt^＊ ） are unchanged under strain. The energy shift between the △^i levels and the △1 level follows the linear deformation potential theory. Finally,a description of the conduction band （CB） edge in biaxially strained layers is given.展开更多
A band edge model in （101）-biaxial strained Si on relaxed Si1-x Gex alloy,or monoclinic Si （m-Si）,is presented using the k · p perturbation method coupled with deformation potential theory. Results show that ...A band edge model in （101）-biaxial strained Si on relaxed Si1-x Gex alloy,or monoclinic Si （m-Si）,is presented using the k · p perturbation method coupled with deformation potential theory. Results show that the [001], [001], [100], [100] valleys constitute the conduction band （CB） edge,which moves up in electron energy as the Ge fraction （x） increases. Furthermore,the CB splitting energy is in direct proportion to x and all the valence band （VB） edges move up in electron energy as x increases. In addition, the decrease in the indirect bandgap and the increase in the VB edge splitting energy as x increases are found. The quantitative data from the models supply valuable references for the design of the devices.展开更多
GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed r...GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.展开更多
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor ...Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor （PMOSFET）, analytical expressions of the threshold voltages for buried channel and surface channel are presented. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel （compressive strained SiGe） than in the surface channel （tensile strained Si）, because the hole mobility in the buried channel is higher than that in the surface channel. Thus they offer a good accuracy as compared with the results of device simulator ISE. With this model, the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted, such as Ge fraction, layer thickness, and doping concentration. This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si1-yGey metal-oxide-semiconductor field-effect transistor （MOSFET） designs.展开更多
The valence subband energies and wave functions of a tensile strained quantum well are calculated by the plane wave expansion method within the 6×6 Luttinger Kohn model.The effect of the number and period of pla...The valence subband energies and wave functions of a tensile strained quantum well are calculated by the plane wave expansion method within the 6×6 Luttinger Kohn model.The effect of the number and period of plane waves used for expansion on the stability of energy eigenvalues is examined.For practical calculation,it should choose the period large sufficiently to ensure the envelope functions vanish at the boundary and the number of plane waves large enough to ensure the energy eigenvalues keep unchanged within a prescribed range.展开更多
An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. The model deals directly with the strain tensor,and thus is independent of the manufacturing process. It is sui...An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. The model deals directly with the strain tensor,and thus is independent of the manufacturing process. It is suitable for （100〉/ 〈110） channel nMOSFETs under biaxial or （100〉/〈 110 ） uniaxial stress and can be implemented in conventional device simulation tools .展开更多
A semiconductor optical amplifier gate based on tensile strained quasi bulk InGaAs is developed.At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band filling effect...A semiconductor optical amplifier gate based on tensile strained quasi bulk InGaAs is developed.At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band filling effect.Moreover,the most important is that very low polarization dependence of gain (<0 7dB),fiber to fiber lossless operation current (70～90mA) and a high extinction ratio (>50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520～1609nm) which nearly covers the spectral region of the whole C band (1525～1565nm) and the whole L band (1570～1610nm).The gating time is also improved by decreasing carrier lifetime.The wide band polarization insensitive SOA gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems.展开更多
The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain...The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.展开更多
The feature of conduction band （CB） of Tensile-Strained Si（TS-Si） on a relaxed Si1-xGex substrate is systematically investigated, including the number of equivalent CB edge energy extrema, CB energy minima, the po...The feature of conduction band （CB） of Tensile-Strained Si（TS-Si） on a relaxed Si1-xGex substrate is systematically investigated, including the number of equivalent CB edge energy extrema, CB energy minima, the position of the extremal point, and effective mass. Based on an analysis of symmetry under strain, the number of equivalent CB edge energy extrema is presented; Using the K.P method with the help of perturbation theory, dispersion relation near minima of CB bottom energy, derived from the linear deformation potential theory, is determined, from which the parameters, namely, the position of the extremal point, and the longitudinal and transverse masses （m1^＊ and mt^＊）are obtained.展开更多
A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Sil-xGex layer for p-MOSFET and an electron quantu...A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Sil-xGex layer for p-MOSFET and an electron quantum well channel in the tensile strained Si layer for n-MOSFET. The device possesses several advantages including： 1） the integration of electron quantum well channel with hole quantum well channel into the same vertical layer structure; 2） the gate work function modifiability due to the introduction of poly-SiGe as a gate material; 3） better transistor matching; and 4） flexibility of layout design of CMOSFET by adopting exactly the same material lays for both n-channel and p-channel. The MEDICI simulation result shows that p-MOSFET and n-MOSFET have approximately the same matching threshold voltages. Nice performances are displayed in transfer characteristic, transconductance and cut-off frequency. In addition, its operation as an inverter confirms the CMOSFET structured device to be normal and effective in function.展开更多
Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface chann...Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.展开更多
Constrained groove pressing（CGP） is a new severe plastic deformation method suitable for producing ultra-fine grained sheet metals. In this work, the processing efficiency for a muti-pass CGP of pure copper was inve...Constrained groove pressing（CGP） is a new severe plastic deformation method suitable for producing ultra-fine grained sheet metals. In this work, the processing efficiency for a muti-pass CGP of pure copper was investigated. With a relatively small groove width of 2 mm and tight constraint, a sharp variation of mechanical properties with pass number is observed. Subgrains with the size of＊0.5 lm have distinct boundaries, which is the predominant feature in the microstructure after three passes. The evolution of deformation homogeneity characterized by micro-hardness distribution was examined in detail.Observations of optical micrographs and fracture surface morphology confirm the evolution rule. The relation between electrical resistivity and accumulative plastic strain was discussed. Crystalline defects, micro-cracks, and microstructure uniformity together determine the change of electrical resistivity of CGP copper.展开更多
The electronic structures of (CdSe)n/(ZnSe)m strained-lager soperfattice (SLS) were investigated by the recursion method in the tight-bindiop opproximation. The total,local, and partial density of states were calculat...The electronic structures of (CdSe)n/(ZnSe)m strained-lager soperfattice (SLS) were investigated by the recursion method in the tight-bindiop opproximation. The total,local, and partial density of states were calculated for n=1, m=5.The total density of states (TDOS) for bulk CdSe, ZnSe and n=1, 3, m=1, 3, 5, for SLS were investigated.Fermi energy, the band gap, the valence of an atom, and the ionization potential and the electron affinity were discassed.展开更多
In this study,the conversion efficiency(CE),open-circuit voltage(V_(OC))and short-circuit current density(J_(SC))of wurtzite In_(x)Ga_(1-x)N/ZnSnN_(2)core/shell quantum dot(QD)solar cells are studied by using the deta...In this study,the conversion efficiency(CE),open-circuit voltage(V_(OC))and short-circuit current density(J_(SC))of wurtzite In_(x)Ga_(1-x)N/ZnSnN_(2)core/shell quantum dot(QD)solar cells are studied by using the detailed balance model.The effects of strain and external electric field have been considered.The results show that with the increase of the core size,the V_(OC)increases,while the J_(SC)and CE decrease.With the increase of shell size or In content,the V_(OC)decreases,while the J_(SC)and CE increase.In addition,our calculations show that the band gap of QD increases due to strain,which leads to an increase of the V_(OC),but decreases of the CE and J_(SC).By contrast,the situation is opposite under the effect of external electric field.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.92265113,12034018,12474490,and 62404248)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302300)。
文摘Strained germanium hole spin qubits are promising for quantum computing,but the devices hosting these qubits face challenges from high interface trap density,which originates from the naturally oxidized surface of the wafer.These traps can degrade the device stability and cause an excessively high threshold voltage.Surface passivation is regarded as an effective method to mitigate these impacts.In this study,we perform low-thermal-budget chemical passivation using the nitric acid oxidation of silicon method on the surface of strained germanium devices and investigate the impact of passivation on the device stability.The results demonstrate that surface passivation effectively reduces the interface defect density.This not only improves the stability of the device's threshold voltage but also enhances its long-term static stability.Furthermore,we construct a band diagram of hole surface tunneling at the static operating point to gain a deeper understanding of the physical mechanism through which passivation affects the device stability.This study provides valuable insights for future optimization of strained Ge-based quantum devices and advances our understanding of how interface states affect device stability.
基金Project supported by the National Key R&D Program of China (Grant No. 2023YFF1203600)the National Natural Science Foundation of China (Grant Nos. 62122036, 62034004, 12322407, 61921005, and 12074176)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44000000)supported by the program for Outstanding Ph D Candidates of Nanjing University。
文摘Mechanical strain can induce noteworthy structural and electronic changes in vanadium dioxide, imparting substantial scientific importance to both the exploration of phase transitions and the development of potential technological applications. Unlike the traditional rutile(R) phase, bronze-phase vanadium dioxide [VO_(2)(B)] exhibits an in-plane anisotropic structure. When subjected to stretching along distinct crystallographic axes, VO_(2)(B) may further manifest the axial dependence in lattice–electron interactions, which is beneficial for gaining insights into the anisotropy of electronic transport.Here, we report an anisotropic room-temperature metal–insulator transition in single-crystal VO_(2)(B) by applying in-situ uniaxial tensile strain. This material exhibits significantly different electromechanical responses along two anisotropic axes.We reveal that such an anisotropic electromechanical response mainly arises from the preferential arrangement of a straininduced unidirectional stripe state in the conductive channel. This insulating stripe state could be attributed to the in-plane dimerization within the distorted zigzag chains of vanadium atoms, evidenced by strain-modulated Raman spectra. Our work may open up a promising avenue for exploiting the anisotropy of metal–insulator transition in vanadium dioxide for potential technological applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11904261 and 11904259).
文摘Materials with kagome lattices have attracted significant research attention due to their nontrivial features in energy bands.We theoretically investigate the evolution of electronic band structures of kagome lattices in response to uniaxial strain using both a tight-binding model and an antidot model based on a periodic muffin-tin potential.It is found that the Dirac points move with applied strain.Furthermore,the flat band of unstrained kagome lattices is found to develop into a highly anisotropic shape under a stretching strain along y direction,forming a partially flat band with a region dispersionless along ky direction while dispersive along kx direction.Our results shed light on the possibility of engineering the electronic band structures of kagome materials by mechanical strain.
基金supported by the Natural Science Foundation of China [grant number 52122811]。
文摘The Türkiye earthquake sequence on February 6, 2023, was featured by the closely located earthquake doublet of M_(W)7.8 and M_(W)7.5. The consequent strong ground motions are supposed to be able to impose high demands on the ultra-low-cycle fatigue performance of metallic dampers in buildings, including the widely used buckling restrained braces. This study evaluates the cumulative plastic deformation(CPD) demands on bucklingrestrained braces(BRBs) in multi-story buildings imposed by the strong ground motions in the 2023 Türkiye earthquake doublet. Thirty-two records of the highest peak ground accelerations were selected from the strong motion database. Among them, eight captured the ground motions during both events, and the rest only captured the shaking of either of the events. The CPD demands on the BRBs in reinforced concrete frames with various fundamental periods, brace-to-frame stiffness ratios, and BRB ductility ratio are calculated by nonlinear time history analyses and are summarized in the form of enveloped spectra of CPD ratios at constant ductility. The results show that the CPD demands on BRBs increase with smaller brace-toframe stiffness ratios and larger BRB ductility ratios. The enveloped CPD demands are several hundreds of times the nominal yield deformation of the BRB, which are much higher than the CPD demands for the calibration tests of BRBs stipulated by AISC 341 in the US.
文摘The fabrication and characterization of strained-Si material grown on a relaxed Si0.79 Ge0.21/graded Si1-x- Gex/Si virtual substrate, using reduced pressure chemical vapor deposition, are presented. The Ge concentration of the constant composition SiGe layer and the grading rate of the graded SiGe layer are estimated with double-crystal X-ray diffraction and further confirmed by SIMS measurements. The surface root mean square roughness of the strained Si cap layer is 2.36nm,and the strain is about 0.83% as determined by atomic force microscopy and Raman spectra, respectively. The threading dislocation density is on the order of 4 × 10^4cm^-2. Furthermore, it is found that the stress in the strained Si cap layer is maintained even after the high thermal budget process, nMOSFET devices are fabricated and measured in strained-Si and unstrained bulk-Si channels. Compared to the co-processed bulk-Si MOSFETs at room temperature,a significant low vertical field mobility enhancement of about 85% is observed in the strained-Si devices.
文摘We investigate the binding energies of excitons in a strained （111）-oriented zinc-blende GaN/Al0.3 Ga0.7 N quantum well screened by the electron-hole （e-h） gas under hydrostatic pressure by combining a variational method and a selfconsistent procedure. A built-in electric field produced by the strain-induced piezoelectric polarization is considered in our calculations. The result indicates that the binding energies of excitons increase nearly linearly with pressure,even though the modification of strain with hydrostatic pressure is considered, and the influence of pressure is more apparent under higher e-h densities. It is also found that as the density of an e-h gas increases,the binding energies first increase slowly to a maximum and then decrease rapidly when the e-h density is larger than about 1 ×10^11 cm^-2. The excitonic binding energies increase obviously as the barrier thickness decreases due to the decrease of the built-in electric field.
文摘Based on an analysis of symmetry, the dispersion relations near the Ai valley in strained Si1-x Gex （0≤x〈0.45）/ （001）, （111）, （101）Si are derived using the KP method with perturbation theory. These relations demonstrate that △^i levels in strained Si1-x Gex are different from the △1 level in relaxed Si1-x Gex, while the longitudinal and transverse masses （m1^＊ and mt^＊ ） are unchanged under strain. The energy shift between the △^i levels and the △1 level follows the linear deformation potential theory. Finally,a description of the conduction band （CB） edge in biaxially strained layers is given.
基金the National Ministries and Commissions of China(Nos.51308040203,9140A08060407DZ0103)~~
文摘A band edge model in （101）-biaxial strained Si on relaxed Si1-x Gex alloy,or monoclinic Si （m-Si）,is presented using the k · p perturbation method coupled with deformation potential theory. Results show that the [001], [001], [100], [100] valleys constitute the conduction band （CB） edge,which moves up in electron energy as the Ge fraction （x） increases. Furthermore,the CB splitting energy is in direct proportion to x and all the valence band （VB） edges move up in electron energy as x increases. In addition, the decrease in the indirect bandgap and the increase in the VB edge splitting energy as x increases are found. The quantitative data from the models supply valuable references for the design of the devices.
文摘GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.
基金Project supported by the National Defence Pre-research Foundation of China (Grant Nos. 51308040203,9140A08060407DZ0103,and 6139801)
文摘Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor （PMOSFET）, analytical expressions of the threshold voltages for buried channel and surface channel are presented. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel （compressive strained SiGe） than in the surface channel （tensile strained Si）, because the hole mobility in the buried channel is higher than that in the surface channel. Thus they offer a good accuracy as compared with the results of device simulator ISE. With this model, the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted, such as Ge fraction, layer thickness, and doping concentration. This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si1-yGey metal-oxide-semiconductor field-effect transistor （MOSFET） designs.
文摘The valence subband energies and wave functions of a tensile strained quantum well are calculated by the plane wave expansion method within the 6×6 Luttinger Kohn model.The effect of the number and period of plane waves used for expansion on the stability of energy eigenvalues is examined.For practical calculation,it should choose the period large sufficiently to ensure the envelope functions vanish at the boundary and the number of plane waves large enough to ensure the energy eigenvalues keep unchanged within a prescribed range.
文摘An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. The model deals directly with the strain tensor,and thus is independent of the manufacturing process. It is suitable for （100〉/ 〈110） channel nMOSFETs under biaxial or （100〉/〈 110 ） uniaxial stress and can be implemented in conventional device simulation tools .
文摘A semiconductor optical amplifier gate based on tensile strained quasi bulk InGaAs is developed.At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band filling effect.Moreover,the most important is that very low polarization dependence of gain (<0 7dB),fiber to fiber lossless operation current (70～90mA) and a high extinction ratio (>50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520～1609nm) which nearly covers the spectral region of the whole C band (1525～1565nm) and the whole L band (1570～1610nm).The gating time is also improved by decreasing carrier lifetime.The wide band polarization insensitive SOA gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems.
文摘The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.
文摘The feature of conduction band （CB） of Tensile-Strained Si（TS-Si） on a relaxed Si1-xGex substrate is systematically investigated, including the number of equivalent CB edge energy extrema, CB energy minima, the position of the extremal point, and effective mass. Based on an analysis of symmetry under strain, the number of equivalent CB edge energy extrema is presented; Using the K.P method with the help of perturbation theory, dispersion relation near minima of CB bottom energy, derived from the linear deformation potential theory, is determined, from which the parameters, namely, the position of the extremal point, and the longitudinal and transverse masses （m1^＊ and mt^＊）are obtained.
文摘A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Sil-xGex layer for p-MOSFET and an electron quantum well channel in the tensile strained Si layer for n-MOSFET. The device possesses several advantages including： 1） the integration of electron quantum well channel with hole quantum well channel into the same vertical layer structure; 2） the gate work function modifiability due to the introduction of poly-SiGe as a gate material; 3） better transistor matching; and 4） flexibility of layout design of CMOSFET by adopting exactly the same material lays for both n-channel and p-channel. The MEDICI simulation result shows that p-MOSFET and n-MOSFET have approximately the same matching threshold voltages. Nice performances are displayed in transfer characteristic, transconductance and cut-off frequency. In addition, its operation as an inverter confirms the CMOSFET structured device to be normal and effective in function.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005)the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200807010010)
文摘Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.
基金financially supported by the National Natural Science Foundation of China (No.51375269)Program for New Century Excellent Talents in University (No.NCET-080337)Graduate Independent Innovation Foundation of Shandong University (No. yzc12122)
文摘Constrained groove pressing（CGP） is a new severe plastic deformation method suitable for producing ultra-fine grained sheet metals. In this work, the processing efficiency for a muti-pass CGP of pure copper was investigated. With a relatively small groove width of 2 mm and tight constraint, a sharp variation of mechanical properties with pass number is observed. Subgrains with the size of＊0.5 lm have distinct boundaries, which is the predominant feature in the microstructure after three passes. The evolution of deformation homogeneity characterized by micro-hardness distribution was examined in detail.Observations of optical micrographs and fracture surface morphology confirm the evolution rule. The relation between electrical resistivity and accumulative plastic strain was discussed. Crystalline defects, micro-cracks, and microstructure uniformity together determine the change of electrical resistivity of CGP copper.
文摘The electronic structures of (CdSe)n/(ZnSe)m strained-lager soperfattice (SLS) were investigated by the recursion method in the tight-bindiop opproximation. The total,local, and partial density of states were calculated for n=1, m=5.The total density of states (TDOS) for bulk CdSe, ZnSe and n=1, 3, m=1, 3, 5, for SLS were investigated.Fermi energy, the band gap, the valence of an atom, and the ionization potential and the electron affinity were discassed.
基金supported by the National Natural Science Foundation of China(No.12164033)the Natural Science Foundation of Inner Mongolia(Nos.2019MS01006 and 2020MS01008)。
文摘In this study,the conversion efficiency(CE),open-circuit voltage(V_(OC))and short-circuit current density(J_(SC))of wurtzite In_(x)Ga_(1-x)N/ZnSnN_(2)core/shell quantum dot(QD)solar cells are studied by using the detailed balance model.The effects of strain and external electric field have been considered.The results show that with the increase of the core size,the V_(OC)increases,while the J_(SC)and CE decrease.With the increase of shell size or In content,the V_(OC)decreases,while the J_(SC)and CE increase.In addition,our calculations show that the band gap of QD increases due to strain,which leads to an increase of the V_(OC),but decreases of the CE and J_(SC).By contrast,the situation is opposite under the effect of external electric field.
