Based on the electrical monitoring parameter analysis, physical failure (hot spot) analysis and yield graphics and process characteristics, suspect the subthreshold leakage of kernel device (Core Device) and static re...Based on the electrical monitoring parameter analysis, physical failure (hot spot) analysis and yield graphics and process characteristics, suspect the subthreshold leakage of kernel device (Core Device) and static register (SRAM) circuit leakage affects the total static power consumption, the corresponding failure model, and through the channel doping ion injection condition optimization, gate polysilicon deposition thickness adjustment and the improvement of N inverted well (NW), finally solve the 90nm embedded flash memory chip.展开更多
Our purpose in this study was to present a method for estimating the specific loss power (SLP) in magnetic hyperthermia in the presence of an external static magnetic field (SMF) and to investigate the SLP values esti...Our purpose in this study was to present a method for estimating the specific loss power (SLP) in magnetic hyperthermia in the presence of an external static magnetic field (SMF) and to investigate the SLP values estimated by this method under various diameters (D) of magnetic nanoparticles (MNPs) and amplitudes (H<sub>0</sub>) and frequencies (f) of an alternating magnetic field (AMF). In our method, the SLP was calculated by solving the magnetization relaxation equation of Shliomis numerically, in which the magnetic field strength at time t (H(t)) was assumed to be given by , with H<sub>s</sub> being the strength of the SMF. We also investigated the SLP values in the case when the SMF with a field-free point (FFP) generated by two solenoid coils was used. The SLP value in the quasi steady state (SLP<sub>qss</sub>) decreased with increasing H<sub>s</sub>. The plot of the SLP<sub>qss</sub> values against the position from the FFP became narrow as the gradient strength of the SMF (G<sub>s</sub>) increased. Conversely, it became broad as G<sub>s</sub> decreased. These results suggest that the temperature rise and the area of local heating in magnetic hyperthermia can be controlled by varying the H<sub>s</sub> and G<sub>s</sub> values, respectively. In conclusion, our method will be useful for estimating the SLP in the presence of both the AMF and SMF and for designing an effective local heating system for magnetic hyperthermia in order to reduce the risk of overheating surrounding healthy tissues.展开更多
The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to th...The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value. The RSP I-V characteristics of the power SITH are analyzed in terms of operating mechanism, double carrier injection effect, space charge effect, electron-hole plasma in the channel, and the variation in carrier lifetime. The reverse snapback mechanism is theoretically pro- posed and the mathematical expressions to calculate the voltage and current values at the snapback point are presented. The computing results are compared with the experiment values.展开更多
电力系统具有良好的稳定性是保证电网正常运行的关键,充分应用Power World Simulator电力系统仿真软件对我国西北某地区实际电网进行安全稳定性分析。根据给定的实际电网运行数据搭建电网模型并进行潮流计算,将潮流计算结果与静态安全...电力系统具有良好的稳定性是保证电网正常运行的关键,充分应用Power World Simulator电力系统仿真软件对我国西北某地区实际电网进行安全稳定性分析。根据给定的实际电网运行数据搭建电网模型并进行潮流计算,将潮流计算结果与静态安全理论相结合,对该地区电网模型进行N-1静态安全性分析。针对线路负载率过高以及节点母线电压越限的情况,提出解决措施以达到提高电网运行稳定性的目的。展开更多
Power consumption is the bottleneck of system performance. Power reduction has become an important issue in digital circuit design, especially for high performance portable devices (such as cell phones, PDAs, etc.). M...Power consumption is the bottleneck of system performance. Power reduction has become an important issue in digital circuit design, especially for high performance portable devices (such as cell phones, PDAs, etc.). Many power reduction techniques have also been proposed from the system level down to the circuit level. High-speed computation has thus become the expected norm from the average user, instead of being the province of the few with access to a powerful mainframe. Power must be added to the portable unit, even when power is available in non-portable applications, the issue of low-power design is becoming critical. Thus, it is evident that methodologies for the design of high-throughput, low-power digital systems are needed. Techniques for low-power operation are shown in this paper, which use the lowest possible supply voltage coupled with architectural, logic style, circuit, and technology optimizations. The threshold vol-tages of the MTCMOS devices for both low and high Vth are constructed as the low threshold Vth is approximately 150 - 200 mv whereas the high threshold Vth is managed by varying the thickness of the oxide Tox. Hence we are using different threshold voltages with minimum voltages and hence considered this project as ultra-low power designing.展开更多
文摘Based on the electrical monitoring parameter analysis, physical failure (hot spot) analysis and yield graphics and process characteristics, suspect the subthreshold leakage of kernel device (Core Device) and static register (SRAM) circuit leakage affects the total static power consumption, the corresponding failure model, and through the channel doping ion injection condition optimization, gate polysilicon deposition thickness adjustment and the improvement of N inverted well (NW), finally solve the 90nm embedded flash memory chip.
文摘Our purpose in this study was to present a method for estimating the specific loss power (SLP) in magnetic hyperthermia in the presence of an external static magnetic field (SMF) and to investigate the SLP values estimated by this method under various diameters (D) of magnetic nanoparticles (MNPs) and amplitudes (H<sub>0</sub>) and frequencies (f) of an alternating magnetic field (AMF). In our method, the SLP was calculated by solving the magnetization relaxation equation of Shliomis numerically, in which the magnetic field strength at time t (H(t)) was assumed to be given by , with H<sub>s</sub> being the strength of the SMF. We also investigated the SLP values in the case when the SMF with a field-free point (FFP) generated by two solenoid coils was used. The SLP value in the quasi steady state (SLP<sub>qss</sub>) decreased with increasing H<sub>s</sub>. The plot of the SLP<sub>qss</sub> values against the position from the FFP became narrow as the gradient strength of the SMF (G<sub>s</sub>) increased. Conversely, it became broad as G<sub>s</sub> decreased. These results suggest that the temperature rise and the area of local heating in magnetic hyperthermia can be controlled by varying the H<sub>s</sub> and G<sub>s</sub> values, respectively. In conclusion, our method will be useful for estimating the SLP in the presence of both the AMF and SMF and for designing an effective local heating system for magnetic hyperthermia in order to reduce the risk of overheating surrounding healthy tissues.
文摘The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value. The RSP I-V characteristics of the power SITH are analyzed in terms of operating mechanism, double carrier injection effect, space charge effect, electron-hole plasma in the channel, and the variation in carrier lifetime. The reverse snapback mechanism is theoretically pro- posed and the mathematical expressions to calculate the voltage and current values at the snapback point are presented. The computing results are compared with the experiment values.
文摘电力系统具有良好的稳定性是保证电网正常运行的关键,充分应用Power World Simulator电力系统仿真软件对我国西北某地区实际电网进行安全稳定性分析。根据给定的实际电网运行数据搭建电网模型并进行潮流计算,将潮流计算结果与静态安全理论相结合,对该地区电网模型进行N-1静态安全性分析。针对线路负载率过高以及节点母线电压越限的情况,提出解决措施以达到提高电网运行稳定性的目的。
文摘Power consumption is the bottleneck of system performance. Power reduction has become an important issue in digital circuit design, especially for high performance portable devices (such as cell phones, PDAs, etc.). Many power reduction techniques have also been proposed from the system level down to the circuit level. High-speed computation has thus become the expected norm from the average user, instead of being the province of the few with access to a powerful mainframe. Power must be added to the portable unit, even when power is available in non-portable applications, the issue of low-power design is becoming critical. Thus, it is evident that methodologies for the design of high-throughput, low-power digital systems are needed. Techniques for low-power operation are shown in this paper, which use the lowest possible supply voltage coupled with architectural, logic style, circuit, and technology optimizations. The threshold vol-tages of the MTCMOS devices for both low and high Vth are constructed as the low threshold Vth is approximately 150 - 200 mv whereas the high threshold Vth is managed by varying the thickness of the oxide Tox. Hence we are using different threshold voltages with minimum voltages and hence considered this project as ultra-low power designing.
