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Static response analysis of structures with interval parameters using the second-order Taylor series expansion and the DCA for QB 被引量:3
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作者 Qi Li Zhiping Qiu Xudong Zhang 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 2015年第6期845-854,共10页
In this paper, based on the second-order Taylor series expansion and the difference of convex functions algo- rithm for quadratic problems with box constraints (the DCA for QB), a new method is proposed to solve the... In this paper, based on the second-order Taylor series expansion and the difference of convex functions algo- rithm for quadratic problems with box constraints (the DCA for QB), a new method is proposed to solve the static response problem of structures with fairly large uncertainties in interval parameters. Although current methods are effective for solving the static response problem of structures with interval parameters with small uncertainties, these methods may fail to estimate the region of the static response of uncertain structures if the uncertainties in the parameters are fairly large. To resolve this problem, first, the general expression of the static response of structures in terms of structural parameters is derived based on the second-order Taylor series expansion. Then the problem of determining the bounds of the static response of uncertain structures is transformed into a series of quadratic problems with box constraints. These quadratic problems with box constraints can be solved using the DCA approach effectively. The numerical examples are given to illustrate the accuracy and the efficiency of the proposed method when comparing with other existing methods. 展开更多
关键词 Interval parameters · Second-order Taylorseries expansion · static response of uncertain structures Quadratic programming problems · DCA
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Electrical model parameters identification of radiofrequency discharge in argon through 1D3V/PIC-MC model
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作者 Mohamed MOSTAFAOUI Djilali BENYOUCEF 《Plasma Science and Technology》 SCIE EI CAS CSCD 2018年第9期106-113,共8页
This work represents a contribution to the modeling of a radiofrequency(RF) discharge in argon at low pressure(from 25 to 200 mTorr).It is started by the validation of the collision cross sections used in the part... This work represents a contribution to the modeling of a radiofrequency(RF) discharge in argon at low pressure(from 25 to 200 mTorr).It is started by the validation of the collision cross sections used in the particle model through a comparison between the transport coefficients calculated by these data and the measurements of the transport coefficients already exist in the literature,the particle model is also validated by a comparison between the calculated plasma density and that measured in the literature.The electrical model proposed in this work consists of replacing the RF discharge by a passive circuit(resistance in series with a capacitor),where the resistance represents the plasma medium and the obstruction of the passage of the electronic current,and the capacitor represents the sheaths and the appearance of the displacement current in these regions.The parameters of the electrical model are obtained through particle modeling.The electrical model presented accurately reproduces the current of the discharge,but without considering the phenomenon of distortion.The total harmonic distortion rate follows the variation of the plasma density;its maximum value is 5.75% at 100 mTorr. 展开更多
关键词 electrical model least square method particle model radiofrequency discharge static parameters identification
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Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress 被引量:1
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作者 Chenkai Zhu Linna Zhao +1 位作者 Zhuo Yang Xiaofeng Gu 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第9期482-487,共6页
The repetitive unclamped inductive switching(UIS)avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET(C-SGT)and P-ring SGT MOSFETs(P-SGT).It is... The repetitive unclamped inductive switching(UIS)avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET(C-SGT)and P-ring SGT MOSFETs(P-SGT).It is found that the static and dynamic parameters of both devices show different degrees of degradation.Combining experimental and simulation results,the hot holes trapped into the Si/SiO_(2) interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors.Moreover,under repetitive UIS avalanche stress,the reliability of P-SGT overcomes that of C-SGT,benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring. 展开更多
关键词 shield gate trench MOSFET repetitive unclamped inductive switching stress DEGRADATION static and dynamic parameters
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