In this paper, based on the second-order Taylor series expansion and the difference of convex functions algo- rithm for quadratic problems with box constraints （the DCA for QB）, a new method is proposed to solve the...In this paper, based on the second-order Taylor series expansion and the difference of convex functions algo- rithm for quadratic problems with box constraints （the DCA for QB）, a new method is proposed to solve the static response problem of structures with fairly large uncertainties in interval parameters. Although current methods are effective for solving the static response problem of structures with interval parameters with small uncertainties, these methods may fail to estimate the region of the static response of uncertain structures if the uncertainties in the parameters are fairly large. To resolve this problem, first, the general expression of the static response of structures in terms of structural parameters is derived based on the second-order Taylor series expansion. Then the problem of determining the bounds of the static response of uncertain structures is transformed into a series of quadratic problems with box constraints. These quadratic problems with box constraints can be solved using the DCA approach effectively. The numerical examples are given to illustrate the accuracy and the efficiency of the proposed method when comparing with other existing methods.展开更多
This work represents a contribution to the modeling of a radiofrequency（RF） discharge in argon at low pressure（from 25 to 200 mTorr）.It is started by the validation of the collision cross sections used in the part...This work represents a contribution to the modeling of a radiofrequency（RF） discharge in argon at low pressure（from 25 to 200 mTorr）.It is started by the validation of the collision cross sections used in the particle model through a comparison between the transport coefficients calculated by these data and the measurements of the transport coefficients already exist in the literature,the particle model is also validated by a comparison between the calculated plasma density and that measured in the literature.The electrical model proposed in this work consists of replacing the RF discharge by a passive circuit（resistance in series with a capacitor）,where the resistance represents the plasma medium and the obstruction of the passage of the electronic current,and the capacitor represents the sheaths and the appearance of the displacement current in these regions.The parameters of the electrical model are obtained through particle modeling.The electrical model presented accurately reproduces the current of the discharge,but without considering the phenomenon of distortion.The total harmonic distortion rate follows the variation of the plasma density;its maximum value is 5.75% at 100 mTorr.展开更多
This study provides a new experimental framework to measure the static and dynamic electrical parameters for a solar panel of multiple cells.The study evaluates its static parameters,including its resultant diodes’sa...This study provides a new experimental framework to measure the static and dynamic electrical parameters for a solar panel of multiple cells.The study evaluates its static parameters,including its resultant diodes’saturation currents,diodes’ideality factors,series,and shunt resistances.Such parameters are essential to characterise the steady-state performance of a solar panel.Additionally,the dynamic parameters as the equivalent junction and diffusion capacitances are also experimentally measured.These parameters impact the performance of the panel at variable solar irradiance,temperature,and load conditions.A solar panel of 36 series-connected cells has been utilised in this research to undertake this experimental evaluation.This work addresses a gap in the recent literature regarding a full evaluation of the internal electrical parameters in a whole solar panel of multiple cells.Firstly,a dark experimental environment has been developed so that no influence from external light sources can affect the measurements being taken.The panel is then stimulated with different types of electrical stresses in various circuit configurations to measure the required static and dynamic parameters.For the solar panel under study,the series and shunt resistances per cell have been evaluated to be 18.91 mΩand 5.6 kΩ,respectively,while the junction and diffusion capacitances have shown direct and inverse relationships,respectively,with the applied voltage as expected.The outcomes of these experimental setups highlighted the importance of the developed comprehensive framework in this research to be employed to assess the quality of the solar panel and its real-time performance at variable operational conditions.展开更多
The repetitive unclamped inductive switching(UIS)avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET(C-SGT)and P-ring SGT MOSFETs(P-SGT).It is...The repetitive unclamped inductive switching(UIS)avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET(C-SGT)and P-ring SGT MOSFETs(P-SGT).It is found that the static and dynamic parameters of both devices show different degrees of degradation.Combining experimental and simulation results,the hot holes trapped into the Si/SiO_(2) interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors.Moreover,under repetitive UIS avalanche stress,the reliability of P-SGT overcomes that of C-SGT,benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.展开更多
基金supported by the National Natural Science Foundation of China (Grants 11002013, 11372025)the Defense Industrial Technology Development Program (Grants A0820132001, JCKY2013601B)+1 种基金the Aeronautical Science Foundation of China (Grant 2012ZA51010)111 Project (Grant B07009) for support
文摘In this paper, based on the second-order Taylor series expansion and the difference of convex functions algo- rithm for quadratic problems with box constraints （the DCA for QB）, a new method is proposed to solve the static response problem of structures with fairly large uncertainties in interval parameters. Although current methods are effective for solving the static response problem of structures with interval parameters with small uncertainties, these methods may fail to estimate the region of the static response of uncertain structures if the uncertainties in the parameters are fairly large. To resolve this problem, first, the general expression of the static response of structures in terms of structural parameters is derived based on the second-order Taylor series expansion. Then the problem of determining the bounds of the static response of uncertain structures is transformed into a series of quadratic problems with box constraints. These quadratic problems with box constraints can be solved using the DCA approach effectively. The numerical examples are given to illustrate the accuracy and the efficiency of the proposed method when comparing with other existing methods.
文摘This work represents a contribution to the modeling of a radiofrequency（RF） discharge in argon at low pressure（from 25 to 200 mTorr）.It is started by the validation of the collision cross sections used in the particle model through a comparison between the transport coefficients calculated by these data and the measurements of the transport coefficients already exist in the literature,the particle model is also validated by a comparison between the calculated plasma density and that measured in the literature.The electrical model proposed in this work consists of replacing the RF discharge by a passive circuit（resistance in series with a capacitor）,where the resistance represents the plasma medium and the obstruction of the passage of the electronic current,and the capacitor represents the sheaths and the appearance of the displacement current in these regions.The parameters of the electrical model are obtained through particle modeling.The electrical model presented accurately reproduces the current of the discharge,but without considering the phenomenon of distortion.The total harmonic distortion rate follows the variation of the plasma density;its maximum value is 5.75% at 100 mTorr.
文摘This study provides a new experimental framework to measure the static and dynamic electrical parameters for a solar panel of multiple cells.The study evaluates its static parameters,including its resultant diodes’saturation currents,diodes’ideality factors,series,and shunt resistances.Such parameters are essential to characterise the steady-state performance of a solar panel.Additionally,the dynamic parameters as the equivalent junction and diffusion capacitances are also experimentally measured.These parameters impact the performance of the panel at variable solar irradiance,temperature,and load conditions.A solar panel of 36 series-connected cells has been utilised in this research to undertake this experimental evaluation.This work addresses a gap in the recent literature regarding a full evaluation of the internal electrical parameters in a whole solar panel of multiple cells.Firstly,a dark experimental environment has been developed so that no influence from external light sources can affect the measurements being taken.The panel is then stimulated with different types of electrical stresses in various circuit configurations to measure the required static and dynamic parameters.For the solar panel under study,the series and shunt resistances per cell have been evaluated to be 18.91 mΩand 5.6 kΩ,respectively,while the junction and diffusion capacitances have shown direct and inverse relationships,respectively,with the applied voltage as expected.The outcomes of these experimental setups highlighted the importance of the developed comprehensive framework in this research to be employed to assess the quality of the solar panel and its real-time performance at variable operational conditions.
基金Project supported by the National Natural Science Foundation of China(Grant No.61504049)Jiangsu Province Postdoctoral Science Foundation(Grant No.2018K057B)the Fundamental Research Funds for the Central Universities,China(Grant No.JUSRP51510).
文摘The repetitive unclamped inductive switching(UIS)avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET(C-SGT)and P-ring SGT MOSFETs(P-SGT).It is found that the static and dynamic parameters of both devices show different degrees of degradation.Combining experimental and simulation results,the hot holes trapped into the Si/SiO_(2) interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors.Moreover,under repetitive UIS avalanche stress,the reliability of P-SGT overcomes that of C-SGT,benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.
