The optimization of device performance through tunable elemental doping is one of the appealing aspects of semiconductors.Compared with heavy doping,light doping is more efficient and allows for the precise regulation...The optimization of device performance through tunable elemental doping is one of the appealing aspects of semiconductors.Compared with heavy doping,light doping is more efficient and allows for the precise regulation of material properties and the tailoring of band structures.In this study,a facile plasma-enhanced chemical vapor deposition technology is employed to fabricate a series of Sn-doped Ga_(2)O_(3) films(Sn:Ga=0–1.14 at.%).The conductivity of the films,along with the atypical Schottky-type junction behavior observed at the Ti/Sn-Ga_(2)O_(3) interface,can be modulated by varying the concentrations of oxygen vacancy(O_(Ⅱ)),and coordinately influence the carrier transport processes and the detection performance of the corresponding Au/Ti/Sn-Ga_(2)O_(3)/Ti/Au photodetectors.Notably,as the O_(Ⅱ) concentration increases to 38.88%,the interfacial Schottky barrier height decreases to 0.54 eV,which facilitates electron tunneling and promotes a superior responsivity reaching 1880 mA/W.Conversely,a reduced O_(Ⅱ) concentration of 30%reinforces the barrier height(0.70 eV),which in turn restricts the dark current(28.4 pA)while improving the detectivity to 1.44×10^(13) Jones and the photo-to-dark current ratio to 3.42×10^(4).This research highlights the importance of balancing doping concentration with performance optimization and illustrates the significant potential of interface engineering in regulating electronic transport behavior and device performance.展开更多
Sn doping is usually adopted to prepare Ti_(3)AlC_(2)in mass production because it can reduce the synthesis temperature while increasing the phase purity.However,excessive Sn doping usually deteriorates the oxidation ...Sn doping is usually adopted to prepare Ti_(3)AlC_(2)in mass production because it can reduce the synthesis temperature while increasing the phase purity.However,excessive Sn doping usually deteriorates the oxidation resistance of Ti_(3)AlC_(2).Therefore,an appropriate Sn doping concentration is a vital issue.In this work,the effect of Sn doping concentration on the oxidation behavior of Ti_(3)AlC_(2)was systematically investigated by combining theoretical calculations and experimental methods.Density function theory calculations suggest that the oxygen adsorption mechanisms for the(001)surface of Ti_(3)AlC_(2)with and without Sn doping are similar,and Ti-O bonds are always preferentially formed.The molecular dynamics simulation further indicates that Al atoms have a faster diffusion rate during the oxidation process.Therefore,a continuous Al_(2)O_(3)layer can form rapidly at high temperature.Nevertheless,when the Sn doping concentration exceeds 10 mol%,the continuity of the Al_(2)O_(3)layer is destroyed,thereby impairing the oxidation resistance of Ti_(3)AlC_(2).Furthermore,oxidation experiments verify the above results.The oxidation mechanisms of Ti3AlC2 with different Sn doping concentrations are also proposed.展开更多
Solid electrolytes face challenges in solid-state sodium batteries(SSSBs)because of limited ionic conductivity,increased interfacial resistance,and sodium dendrite issues.In this study,we adopted a unique Sn4+doping s...Solid electrolytes face challenges in solid-state sodium batteries(SSSBs)because of limited ionic conductivity,increased interfacial resistance,and sodium dendrite issues.In this study,we adopted a unique Sn4+doping strategy for Na_(3.2)Zr_(2)Si_(2.2)P_(0.8)O_(12)(NZSP)that caused a partial structural transition from the monoclinic(C2/c)phase to the rhombohedral(R-3c)phase in Na_(3.2)Zr_(1.9)Sn_(0.1)Si_(2.2)P_(0.8)O_(12)(NZSnSP1).X-ray diffraction(XRD)patterns and high-resolution transmission electron microscopy analyses were used to confirm this transition,where rhombohedral NZSnSP1 showed an increase in the Na2-O bond length compared with monoclinic NZSnSP1,increasing its triangular bottleneck areas and noticeably enhancing Na+ionic conductivity,a higher Na transference number,and lower electronic conductivity.NZSnSP1 also showed exceptionally high compatibility with Na metal with an increased critical current density,as evidenced by symmetric cell tests.The SSSB,fabricated using Na_(0.9)Zn_(0.22)Fe_(0.3)Mn_(0.48)O_(2)(NZFMO),Na metal,and NZSnSP1 as the cathode,anode,and the solid electrolyte and separator,respectively,maintains 65.86%of retention in the reversible capacity over 300 cycles within a voltage range of 2.0-4.0 V at 25℃ at 0.1 C.The in-situ X-ray diffraction and X-ray absorption analyses of the P and Zr K-edges confirmed that NZSnSP1 remained highly stable before and after electrochemical cycling.This crystal structure modification strategy enables the synthesis of ideal solid electrolytes for practical SSSBs.展开更多
Sn1-2xFexNbxO2（0.45≤x≤0.50） samples were prepared at 1000 ℃ via a simple chemical co-precipitation method.The effects of the concentrations of Sn doped on the structures and magnetic properties of the samples hav...Sn1-2xFexNbxO2（0.45≤x≤0.50） samples were prepared at 1000 ℃ via a simple chemical co-precipitation method.The effects of the concentrations of Sn doped on the structures and magnetic properties of the samples have been investigated.A systematic variation from monoclinic to orthorhombic FeNbO4 structure was observed with increasing Sn content.The phase evolutions were observed from monoclinic structure with x=0.50 to the coexistence of monoclinic and orthorhombic structures with x=0.48,0.47,0.46,and then to orthorhombic structure with x=0.45.Antiferromagnetic behavior was observed for all the samples,and the magnetic ordering temperatures decrease with increasing Sn concentration,which further indicated the sequence of phase transitions.The results suggest that the incorporation of Sn can stabilize the orthorhombic FeNbO4.展开更多
This study proved the significance of simulated sunlight irradiation response capability of Sn-F co-doped TiO_(2)/SiO_(2)(Sn-F-TiO_(2)/SiO_(2))photocatalysts,which were prepared by a simple sol-gel method and were eva...This study proved the significance of simulated sunlight irradiation response capability of Sn-F co-doped TiO_(2)/SiO_(2)(Sn-F-TiO_(2)/SiO_(2))photocatalysts,which were prepared by a simple sol-gel method and were evaluated by acrylonitrile degradation for photocatalytic activity.The synthesized catalysts were characterized by X-ray Diffraction(XRD),Scanning Electron Microscopy(SEM),Energy Dispersive Spectrometer(EDS),X-ray Photoelectron Spectroscopy(XPS),Brunauer-Emmett-Teller(BET),Ultraviolet-Visible Absorption spectroscopy(UV-Vis),and Photoluminescence Spectroscopy(PL).UV-Visible spectroscopy demonstrated that Sn doping caused remarkable red shift in TiO_(2),which significantly increased the absorption efficiency of the catalysts.The XPS results showed that Sn was successfully doped into the TiO_(2) lattice.The photocatalytic degradation of acrylonitrile indicated that the Sn-F-TiO_(2)/SiO_(2) photocatalysts exhibited excellent photocatalytic activity when being annealed at 550℃for 2 h.The degradation rate of acrylonitrile reached 67.7%after irradiation under simulated sunlight for 6 min,and the hole was the most important active species.展开更多
Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron s...Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga_(2)O_(3) films changed from amorphous to β-Ga_(2)O_(3) after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm.The β-Ga_(2)O_(3) had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm.The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga_(2)O_(3) thin film annealed in N_2 has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA,the photo dark current ratio is 1.7 × 10~6, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10~3%, the specific detection rate is 2.61 × 10~(12) Jones, the response time and recovery time are 378 and 90 ms, respectively.展开更多
RuO_(2)is a powerful alternative to IrO_(2) catalyst for acidic oxygen evolution reaction(OER),but its widespread application is hampered by its susceptibility to degradation in acidic environments.This instability is...RuO_(2)is a powerful alternative to IrO_(2) catalyst for acidic oxygen evolution reaction(OER),but its widespread application is hampered by its susceptibility to degradation in acidic environments.This instability is primarily due to the detrimental involvement of lattice oxygen,culminating in the formation of the labile RuO_(4) species and large amount of unstable oxygen vacancies.In this context,the electronic configuration and the local coordination environment of RuO_(2)are precise tailored by Sn doping.The resulting asymmetric Ru-O-Sn structure accelerates proton transfer and facilitates the formation of high oxidation state Ru centers.The resulting Sn-doped RuO_(2)electrocatalyst has demonstrated remarkable OER performance in 0.5 M H_(2)SO_(4),with a minimum overpotential of 197 mV at a current density of 10 mA·cm^(-2)and impressive durability.The proposed strategy involves the incorporation of Sn into the RuO_(2)lattice,which reduces the Ru-O covalency,inhibits over-oxidation,and reduces the adsorption energy of reaction intermediates,resulting in a significant improvement in catalyst activity and stability.展开更多
ABSTRACT LiNi0.5Mn1.5-xSnxO4 （0≤x≤ 0.1） cathode materials with uniform and fine particle sizes were successfully synthesized by a two-step calcination of solid-state reaction method. As the cathode materials for l...ABSTRACT LiNi0.5Mn1.5-xSnxO4 （0≤x≤ 0.1） cathode materials with uniform and fine particle sizes were successfully synthesized by a two-step calcination of solid-state reaction method. As the cathode materials for lithium ion batteries, the LiNi0.5Mn1.48Sn0.0204 shows the highest specific capacity and cycle stability. In the potential range of 3.5-4.9 V at room temperature, LiNi0.5MnL4sSn0.0204 composite material shows a discharge capacity of more than 117 mA h g-1 at 0.1 C, while the corresponding discharge capacity of undoped LiNi0.5Mn1.5O4 is only 101 mA h g-1. Moreover, in cycle performance, all the LiNi0.5Mnl.5-xSnxO4 （0 ≤ x≤ 0.1） samples show better capacity retention than the undoped LiNio.sMnx.sO4 at 1 C rate after 100 cycles. Especially, for the LiNi0.5Mn1.5O4, the discharge capacity after 100 cycles is 90 mA h g-1, while the corresponding discharge capacities of the undoped LiNi0.5Mn1.5O4 is only 56.1 mA h g-1. The significantly enhanced DLi＋ and the enlarged electronic conductivity make the Sn-doped spinel LiNi0.5Mn1.504 material present even more excellent electrochemical performances. These results reveal that Sn-doping is an effective way to improve electrochemical performances of LiNi0.5Mn1.5O4.展开更多
基金supported in part by the Joints Fund of the National Natural Science Foundation of China (U23A20349)the National Natural Science Foundation of China (62204126, 62305171, 62304113, and 52402147)+1 种基金the Natural Science Foundation of Jiangsu Province (BK20241464)the Postdoctoral Fellowship Program of China Postdoctoral Science Foundation (GZC20233500)。
文摘The optimization of device performance through tunable elemental doping is one of the appealing aspects of semiconductors.Compared with heavy doping,light doping is more efficient and allows for the precise regulation of material properties and the tailoring of band structures.In this study,a facile plasma-enhanced chemical vapor deposition technology is employed to fabricate a series of Sn-doped Ga_(2)O_(3) films(Sn:Ga=0–1.14 at.%).The conductivity of the films,along with the atypical Schottky-type junction behavior observed at the Ti/Sn-Ga_(2)O_(3) interface,can be modulated by varying the concentrations of oxygen vacancy(O_(Ⅱ)),and coordinately influence the carrier transport processes and the detection performance of the corresponding Au/Ti/Sn-Ga_(2)O_(3)/Ti/Au photodetectors.Notably,as the O_(Ⅱ) concentration increases to 38.88%,the interfacial Schottky barrier height decreases to 0.54 eV,which facilitates electron tunneling and promotes a superior responsivity reaching 1880 mA/W.Conversely,a reduced O_(Ⅱ) concentration of 30%reinforces the barrier height(0.70 eV),which in turn restricts the dark current(28.4 pA)while improving the detectivity to 1.44×10^(13) Jones and the photo-to-dark current ratio to 3.42×10^(4).This research highlights the importance of balancing doping concentration with performance optimization and illustrates the significant potential of interface engineering in regulating electronic transport behavior and device performance.
基金the National Science Fund for Distinguished Young Scholars(Grant No.52025041)the National Natural Science Foundation of China(Grants No.51904021,51902020,and 51974021)the Fundamental Research Funds for the Central Universities(Grants No.FRF-TP-19-008A1 and FRF-TP-19-004B2Z).
文摘Sn doping is usually adopted to prepare Ti_(3)AlC_(2)in mass production because it can reduce the synthesis temperature while increasing the phase purity.However,excessive Sn doping usually deteriorates the oxidation resistance of Ti_(3)AlC_(2).Therefore,an appropriate Sn doping concentration is a vital issue.In this work,the effect of Sn doping concentration on the oxidation behavior of Ti_(3)AlC_(2)was systematically investigated by combining theoretical calculations and experimental methods.Density function theory calculations suggest that the oxygen adsorption mechanisms for the(001)surface of Ti_(3)AlC_(2)with and without Sn doping are similar,and Ti-O bonds are always preferentially formed.The molecular dynamics simulation further indicates that Al atoms have a faster diffusion rate during the oxidation process.Therefore,a continuous Al_(2)O_(3)layer can form rapidly at high temperature.Nevertheless,when the Sn doping concentration exceeds 10 mol%,the continuity of the Al_(2)O_(3)layer is destroyed,thereby impairing the oxidation resistance of Ti_(3)AlC_(2).Furthermore,oxidation experiments verify the above results.The oxidation mechanisms of Ti3AlC2 with different Sn doping concentrations are also proposed.
基金supported by the National Research Foundation of Korea(RS-2024-00404414)the National Research Council of Science&Technology(NST,No.GTL24011-000)funded by the Ministry of Science and ICTsupported by the KIST Institutional Program(Project No.2E33270).
文摘Solid electrolytes face challenges in solid-state sodium batteries(SSSBs)because of limited ionic conductivity,increased interfacial resistance,and sodium dendrite issues.In this study,we adopted a unique Sn4+doping strategy for Na_(3.2)Zr_(2)Si_(2.2)P_(0.8)O_(12)(NZSP)that caused a partial structural transition from the monoclinic(C2/c)phase to the rhombohedral(R-3c)phase in Na_(3.2)Zr_(1.9)Sn_(0.1)Si_(2.2)P_(0.8)O_(12)(NZSnSP1).X-ray diffraction(XRD)patterns and high-resolution transmission electron microscopy analyses were used to confirm this transition,where rhombohedral NZSnSP1 showed an increase in the Na2-O bond length compared with monoclinic NZSnSP1,increasing its triangular bottleneck areas and noticeably enhancing Na+ionic conductivity,a higher Na transference number,and lower electronic conductivity.NZSnSP1 also showed exceptionally high compatibility with Na metal with an increased critical current density,as evidenced by symmetric cell tests.The SSSB,fabricated using Na_(0.9)Zn_(0.22)Fe_(0.3)Mn_(0.48)O_(2)(NZFMO),Na metal,and NZSnSP1 as the cathode,anode,and the solid electrolyte and separator,respectively,maintains 65.86%of retention in the reversible capacity over 300 cycles within a voltage range of 2.0-4.0 V at 25℃ at 0.1 C.The in-situ X-ray diffraction and X-ray absorption analyses of the P and Zr K-edges confirmed that NZSnSP1 remained highly stable before and after electrochemical cycling.This crystal structure modification strategy enables the synthesis of ideal solid electrolytes for practical SSSBs.
基金Supported by the Postdoctoral Foundation of Henan Province,China
文摘Sn1-2xFexNbxO2（0.45≤x≤0.50） samples were prepared at 1000 ℃ via a simple chemical co-precipitation method.The effects of the concentrations of Sn doped on the structures and magnetic properties of the samples have been investigated.A systematic variation from monoclinic to orthorhombic FeNbO4 structure was observed with increasing Sn content.The phase evolutions were observed from monoclinic structure with x=0.50 to the coexistence of monoclinic and orthorhombic structures with x=0.48,0.47,0.46,and then to orthorhombic structure with x=0.45.Antiferromagnetic behavior was observed for all the samples,and the magnetic ordering temperatures decrease with increasing Sn concentration,which further indicated the sequence of phase transitions.The results suggest that the incorporation of Sn can stabilize the orthorhombic FeNbO4.
基金Sponsored by the Science and Technology Commission of Shenzhen Municipality,P.R.China(Grant Nos.JCYJ20140417172417138 and ZDSYS20140508161622508).
文摘This study proved the significance of simulated sunlight irradiation response capability of Sn-F co-doped TiO_(2)/SiO_(2)(Sn-F-TiO_(2)/SiO_(2))photocatalysts,which were prepared by a simple sol-gel method and were evaluated by acrylonitrile degradation for photocatalytic activity.The synthesized catalysts were characterized by X-ray Diffraction(XRD),Scanning Electron Microscopy(SEM),Energy Dispersive Spectrometer(EDS),X-ray Photoelectron Spectroscopy(XPS),Brunauer-Emmett-Teller(BET),Ultraviolet-Visible Absorption spectroscopy(UV-Vis),and Photoluminescence Spectroscopy(PL).UV-Visible spectroscopy demonstrated that Sn doping caused remarkable red shift in TiO_(2),which significantly increased the absorption efficiency of the catalysts.The XPS results showed that Sn was successfully doped into the TiO_(2) lattice.The photocatalytic degradation of acrylonitrile indicated that the Sn-F-TiO_(2)/SiO_(2) photocatalysts exhibited excellent photocatalytic activity when being annealed at 550℃for 2 h.The degradation rate of acrylonitrile reached 67.7%after irradiation under simulated sunlight for 6 min,and the hole was the most important active species.
基金supported by the National Natural Science Foundation of China (Grant No. 62204203)the Shaanxi Natural Science Basic Research Program (Grant No. 2022JQ-701)。
文摘Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga_(2)O_(3) films changed from amorphous to β-Ga_(2)O_(3) after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm.The β-Ga_(2)O_(3) had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm.The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga_(2)O_(3) thin film annealed in N_2 has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA,the photo dark current ratio is 1.7 × 10~6, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10~3%, the specific detection rate is 2.61 × 10~(12) Jones, the response time and recovery time are 378 and 90 ms, respectively.
基金supported by the National Natural Science Foundation of China(No.22202020)Y.Q.S.acknowledges the“Young Talent Support Plan”of Xi'an Jiaotong University.
文摘RuO_(2)is a powerful alternative to IrO_(2) catalyst for acidic oxygen evolution reaction(OER),but its widespread application is hampered by its susceptibility to degradation in acidic environments.This instability is primarily due to the detrimental involvement of lattice oxygen,culminating in the formation of the labile RuO_(4) species and large amount of unstable oxygen vacancies.In this context,the electronic configuration and the local coordination environment of RuO_(2)are precise tailored by Sn doping.The resulting asymmetric Ru-O-Sn structure accelerates proton transfer and facilitates the formation of high oxidation state Ru centers.The resulting Sn-doped RuO_(2)electrocatalyst has demonstrated remarkable OER performance in 0.5 M H_(2)SO_(4),with a minimum overpotential of 197 mV at a current density of 10 mA·cm^(-2)and impressive durability.The proposed strategy involves the incorporation of Sn into the RuO_(2)lattice,which reduces the Ru-O covalency,inhibits over-oxidation,and reduces the adsorption energy of reaction intermediates,resulting in a significant improvement in catalyst activity and stability.
基金supported by the Science and Technology Program of WeiHai(2015DXGJMS017)HIT&Yun Shan Group Research and Development on Graphite Area
文摘ABSTRACT LiNi0.5Mn1.5-xSnxO4 （0≤x≤ 0.1） cathode materials with uniform and fine particle sizes were successfully synthesized by a two-step calcination of solid-state reaction method. As the cathode materials for lithium ion batteries, the LiNi0.5Mn1.48Sn0.0204 shows the highest specific capacity and cycle stability. In the potential range of 3.5-4.9 V at room temperature, LiNi0.5MnL4sSn0.0204 composite material shows a discharge capacity of more than 117 mA h g-1 at 0.1 C, while the corresponding discharge capacity of undoped LiNi0.5Mn1.5O4 is only 101 mA h g-1. Moreover, in cycle performance, all the LiNi0.5Mnl.5-xSnxO4 （0 ≤ x≤ 0.1） samples show better capacity retention than the undoped LiNio.sMnx.sO4 at 1 C rate after 100 cycles. Especially, for the LiNi0.5Mn1.5O4, the discharge capacity after 100 cycles is 90 mA h g-1, while the corresponding discharge capacities of the undoped LiNi0.5Mn1.5O4 is only 56.1 mA h g-1. The significantly enhanced DLi＋ and the enlarged electronic conductivity make the Sn-doped spinel LiNi0.5Mn1.504 material present even more excellent electrochemical performances. These results reveal that Sn-doping is an effective way to improve electrochemical performances of LiNi0.5Mn1.5O4.
