Micrometer-sized silicon oxide(SiO)anodes encounter challenges in large-scale applications due to significant volume expansion during the alloy/de-alloy process.Herein,an innovative deep eutectic electrolyte derived f...Micrometer-sized silicon oxide(SiO)anodes encounter challenges in large-scale applications due to significant volume expansion during the alloy/de-alloy process.Herein,an innovative deep eutectic electrolyte derived from succinonitrile is introduced to enhance the cycling stability of SiO anodes.Density functional theory calculations validate a robust ion-dipole interaction between lithium ions(Li^(+))and succinonitrile(SN).The cosolvent fluoroethylene carbonate(FEC)optimizes the Li^(+)solvation structure in the SN-based electrolyte with its weakly solvating ability.Molecular dynamics simulations investigate the regulating mechanism of ion-dipole and cation-anion interaction.The unique Li^(+)solvation structure,enriched with FEC and TFSI^(-),facilitates the formation of an inorganic-organic composite solid electrolyte interphase on SiO anodes.Micro-CT further detects the inhibiting effect on the SiO volume expansion.As a result,the SiO|LiCoO_(2) full cells exhibit excellent electrochemical performance in deep eutectic-based electrolytes.This work presents an effective strategy for extending the cycle life of SiO anodes by designing a new SN-based deep eutectic electrolyte.展开更多
A series of CeO2/SiO2 and SixCe1–xO2 complex oxides supported on an activated Al2TiO5-TiO2-SiO2 complex phase (ATS) ceramics were prepared by step impregnation and co-impregnation methods, and characterized by N2-BET...A series of CeO2/SiO2 and SixCe1–xO2 complex oxides supported on an activated Al2TiO5-TiO2-SiO2 complex phase (ATS) ceramics were prepared by step impregnation and co-impregnation methods, and characterized by N2-BET, XRD, SEM and NH3-TPD techniques. The effects of reaction temperature, CeO2/SiO2 loadings and Si/Ce molar ratio on the granular catalysts for NO selective catalytic reduction with ammonia (NH3-SCR) were studied. Results indicated that both CeO2/SiO2/ATS and CeO2/ATS catalysts showed the same ac...展开更多
A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately...A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately 15μm thickness for the stiff backplate.The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB(5.6mV/Pa) to -55dB(1.78mV/Pa) under the frequency from 500Hz to 10kHz,and shows a gradual increase at higher frequency.The cut-off frequency is above 20kHz.展开更多
The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-per...The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-performance spintronic memory and computing applications.Here,we report the development of the PMA superlattice[Pt/Co/W]_(n)that can be sputtered-deposited on commercial oxidized silicon substrates and has giant SOTs,strong uniaxial PMA of≈9.2 Merg/cm^(3),and rigid macrospin performance.The damping-like and field-like SOTs of the[Pt/Co/W]_(n)superlattices exhibit a linear increase with the repeat number n and reach the giant values of 225%and-33%(two orders of magnitude greater than that in clean-limit Pt)at n=12,respectively.The damping-like SOT is also of the opposite sign and much greater in magnitude than the field-like SOT,regardless of the number n.These results clarify that the spin current that generates SOTs in the[Pt/Co/W]_(n)superlattices arises predominantly from the spin Hall effect rather than bulk Rashba spin splitting,providing a unified understanding of the SOTs in these superlattices.We also demonstrate deterministic switching in thickerthan-50-nm PMA[Pt/Co/W]_(12)superlattices at a low current density.This work establishes the[Pt/Co/W]_(n)superlattice as a compelling material candidate for ultra-fast,low-power,long-retention nonvolatile spintronic memory and computing technologies.展开更多
Cerium oxide/silicon rubber was prepared via mechanical blending.Mechanical and frictional properties,as well as thermal stability after thermo-oxidative ageing were investigated in this rubber composite.3D surface pr...Cerium oxide/silicon rubber was prepared via mechanical blending.Mechanical and frictional properties,as well as thermal stability after thermo-oxidative ageing were investigated in this rubber composite.3D surface profilometry,scanning electron microscopy(SEM)and thermogravimetry analysis(TGA)were used to study the friction surface characteristics,friction mechanism and thermal stability,respectively.Additionally,swelling experiments were carried out to investigate the variation of crosslinking density.After thermo-oxidative ageing,the tear strength of cerium oxide/silicon rubber decreases.However,in the early ageing stage,improvements in tensile strength,elongation at break,and frictional performance are caused by crosslinking density increments.Moreover,the addition of cerium oxide remarkably improves the re-cross linking degree during ageing process,which in turn decreases the number of holes on the friction surface and endows the silicon rubber with better mechanical and frictional properties,as well as thermo-oxidative ageing resistance.展开更多
Simultaneous thermal analysis（STA） was used to investigate the effects of silicon content on the oxidation kinetics of silicon-containing steels under an atmosphere and heating procedures similar to those used in in...Simultaneous thermal analysis（STA） was used to investigate the effects of silicon content on the oxidation kinetics of silicon-containing steels under an atmosphere and heating procedures similar to those used in industrial reheating furnaces for the production of hot-rolled strips. Our results show that when the heating temperature was greater than the melting point of Fe2SiO4, the oxidation rates of steels with different silicon contents were the same; the total mass gain decreased with increasing silicon content, whereas it increased with increasing oxygen content. The oxidation rates for steels with different silicon contents were constant with respect to time under isothermal conditions. In addition, the starting oxidation temperature, the intense oxidation temperature, and the finishing oxidation temperature increased with increasing silicon content; the intense oxidation temperature had no correlation with the melting of Fe2SiO4. Moreover, the silicon distributed in two forms： as Fe2SiO4 at the interface between the innermost layer of oxide scale and the iron matrix, and as particles containing silicon in grains and grain boundaries in the iron matrix.展开更多
We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon ...We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon （LOCOS） and deep trench isolation （DTI）. The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate （C/S） junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.展开更多
Nafion/Silicon oxide composite membranes were produced via in situ sol-gel reaction of tetraethylorthosilicate （TEOS） in Nafion membranes. The physicochemical properties of the membranes were studied by FT-IR,TG-DSC...Nafion/Silicon oxide composite membranes were produced via in situ sol-gel reaction of tetraethylorthosilicate （TEOS） in Nafion membranes. The physicochemical properties of the membranes were studied by FT-IR,TG-DSC and tensile strength. The results show that the silicon oxide is compatible with the Nation membrane and the thermo stability of Nation/Silicon oxide composite membrane is higher than that of Nation membrane. Furthermore, the tensile strength of Nation/Silicon oxide composite membrane is similar to that of the Nation membrane. The proton conductivity of Nation/Silicon oxide composite membrane is higher than that of Nation membrane. When the Nation/Silicon oxide composite membrane was employed as an electrolyte in H2/O2 PEMFC, a higher current density value （1 000 mA/cm^2 at 0.38 V） than that of the Nafion1135 membrane （100 mA/cm^2 at 0.04 V） was obtained at 110 ℃.展开更多
The surface oxidation of silicon （Si） wafers by atomic oxygen radical anions （O- anions） and the preparation of metal-oxide-semiconductor （MOS） capacitors on the O-oxidized Si substrates have been examined for t...The surface oxidation of silicon （Si） wafers by atomic oxygen radical anions （O- anions） and the preparation of metal-oxide-semiconductor （MOS） capacitors on the O-oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al2sO64]^4＋·4O^- （Cl2A7-O^- for short）. After it has been irradiated by an O- anion bean： （0.5 μA/cm^2） at 300℃ for 1-10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32 nm. X-ray photoelectron spectroscopy （XPS） results reveal that the oxide layer is of a mixture of SiO2, Si2 O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of 〈Al electrode/SiOx/Si〉 are investigated by measuring capacitance-voltage （C - V） and current-voltage （I - V） curves. The oxide charge density is about 6.0 × 10^1 cm^-2 derived from the （C - V curves. The leakage current density is in the order of 10^-6 A/cm^2 below 4 MV/cm, obtained from the I - V curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.展开更多
Based on the quantum confinement-luminescence center model, to ensembles of spherical silicon nanocrystals (nc-Si) containing two kinds of luminescence centers (LCs) in the layers surrounding the nc-Si, the relations...Based on the quantum confinement-luminescence center model, to ensembles of spherical silicon nanocrystals (nc-Si) containing two kinds of luminescence centers (LCs) in the layers surrounding the nc-Si, the relationship between the photoluminescence (PL) and the thickness of the layer is studied with the excitation energy flux density as a parameter. When there is no layer surrounding the nc-Si, the electron-heavy hole pair can only recombine inside the nc-Si, then the PL blueshift with reducing particle sizes roughly accords with the rule predicted by the quantum confinement model of Canham. When there presences a layer, some of the carriers may tunnel into it and recombine outside the nc-Si at the LCs to emit visible light. The thicker the layer is, the higher the radiative recombination rate occurred outside the nc-Si will be. When the central scale of the nc-Si is much smaller than the critical scale, the radiative recombination rate outside the nc-Si dominates, and visible PL will be possible for some nc-Si samples with big average radius, greater than 4 nm, for example. When there is only one kind of LC in the layer, the PL peak position does not shift with reducing particle sizes. All these conclusions are in accord with the experimental results. When there are two or more kinds of LCs in the layer, the PL peak position energy and intensity swing with reducing particle sizes.展开更多
In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PHy The deposition rate, refractive index, band gap, crystalline volume fraction, and...In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PHy The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The film with refractive index of 1.99, band gap of 2.6eV and conductivity of 10-7 S/cm was obtained, which was suitable for the intermediate reflector layer.展开更多
Photoluminescence （PL） characteristics of Tb-doped silicon rich oxide （SRO） films prepared by DC-sputtering and post-annealing processes were studied. The silicon richness of the SRO film could be controlled by va...Photoluminescence （PL） characteristics of Tb-doped silicon rich oxide （SRO） films prepared by DC-sputtering and post-annealing processes were studied. The silicon richness of the SRO film could be controlled by varying the sputtering power and oxygen concentration in the sputtering chamber. PL emission from the as-deposited sample was found to be composed of Th^3 ＋ intra 4f transition-related emission and the silicon nano particle-related broad bandwidth emission. Thermal annealing could significantly improve the material properties as well as the PL signals. PL properties depended strongly upon the annealing scheme and silicon richness. Annealing at high temperatures （900- 1050℃） enhanced Tbrelated emission and suppressed the silicon nano particle-related emission. For samples with different silicon richness, annealing at 950 ℃ was found to produce higher PL signals than at other temperatures. It was attributed more to lifetime quenching than to concentration quenching. Electroluminescent （EL） devices with a capacitor structure were fabricated, the optimized process condition for the EL device was found to be different from that of PL emission. Among the annealing schemes that were used, wet oxidation was found to improve device performance the most, whereas, dry oxidation was found to improve material property the most. Wet oxidation allowed the breakdown electrical field to increase significantly and to reach above 10 mV·cm^-1. The EL spectra showed a typical Th^3＋ emission, agreeing well with the PL spectra. The I-V measurements indicated that for 100 nm thick film, the Fowler-Nordheim tunneling started at an electrical field of around 6 mV·cm^-1 and the light emission became detectable at a current density of around 10-4 A·cm^-2 and higher. Strong electroluminescence light emission was detected when the electrical field was close to 10 mV·cm^-1.展开更多
Anovel silicon containing carbon precursor was synthesised by reacting a petroleum pitchfraction and polydimethylsilane. The precursor containing about 26wt% Si was meltspunintofibresand then oxidativelystabilised in...Anovel silicon containing carbon precursor was synthesised by reacting a petroleum pitchfraction and polydimethylsilane. The precursor containing about 26wt% Si was meltspunintofibresand then oxidativelystabilised in airto renderthefibresinfusiblebefore pyrolysisat1200℃underinertatmospheretoproduceC Sialloy( CSA) fibres. Theextentofstabili sation wasfoundto becriticalto the development of mechanicalstrength of thefibres which varied with heattreatmenttemperature, showing a maximum at 1200 ℃when thestrength was 1 4 1 6 GPa. Thesestrengthsareremarkably goodconsideringthelow modulus whichis duetothe quite high failurestrains. Thefibrescanshow excellentresistanceto oxidation if given an initialshortexposureto oxygen athigh temperature duetotheformation of an im perceptiblelayer of silica. CSAfibreshavethe advantagesof both carbon fibresand SiCfi bres,thusextended application areascan beenvisaged .展开更多
The stability of the photoluminescence (PS) has evidently improvedby HNO3 chemical oxidation The PL intensity and peak wavelength of PS were changed with theHNO3 of HNO3 concentration and oxidation time. Being diff...The stability of the photoluminescence (PS) has evidently improvedby HNO3 chemical oxidation The PL intensity and peak wavelength of PS were changed with theHNO3 of HNO3 concentration and oxidation time. Being different from other oxidation time. Being different from other oxidized ways, the PSoxidized by HNO3 remains remains sensitive to adsorbates. FTTR spectroscopic data suggest that these phenomena are attributed to the presence of HSi(SiaO30a)(a≤3)layer on PS surface.展开更多
Silicon oxide(SiO_(x))has received remarkable attention as a next-generation battery material;however,the sudden decrease in the cycling retention constitutes a significant challenge in facilitating its application.Tr...Silicon oxide(SiO_(x))has received remarkable attention as a next-generation battery material;however,the sudden decrease in the cycling retention constitutes a significant challenge in facilitating its application.Tris(2,2,2-trifluoroethyl)phosphite(TTFP),which can control parasitic reactions such as the pulverization of SiO_(x)anode materials and electrolyte decomposition,has been proposed to improve the lifespan of the cell.The electrochemical reduction of TTFP results in solid-electrolyte interphase(SEI)layers that are mainly composed of LiF,which occur at a higher potential than the working potential of the SiO_(x)anode and carbonate-based solvents.The electrolyte with TTFP exhibited a substantial improvement in cycling retention after 100 cycles,whereas the standard electrolyte showed acutely decreased retention.The thickness of the SiO_(x)anode with TTFP also changed only slightly without any considerable delamination spots,whereas the SiO_(x)anode without TTFP was prominently deformed by an enormous volume expansion with several internal cracks.The cycled SiO_(x)anode with TTFP exhibited less increase in resistance after cycling than that in the absence of TTFP,in addition to fewer decomposition adducts in corresponding X-ray photoelectron spectroscopy(XPS)analyses between the cycled SiO_(x)anodes.These results demonstrate that TTFP formed SEI layers at the SiO_(x)interface,which substantially reduced the pulverization of the SiO_(x)anode materials;in addition,electrolyte decomposition at the interface decreased,which led to improved cycling retention.展开更多
Geopolymers are three-dimensional aluminosilicates formed in a short time at low temperature by geopolymerization. In this pa-per, alkali-activated foam geopolymers were fabricated from circulating fluidized bed fly a...Geopolymers are three-dimensional aluminosilicates formed in a short time at low temperature by geopolymerization. In this pa-per, alkali-activated foam geopolymers were fabricated from circulating fluidized bed fly ash （CFA）, and the effect of SiO2/Na2O mole ratio （0.91-1.68） on their properties was studied. Geopolymerization products were characterized by mechanical testing, scanning electron mi-croscopy （SEM）, energy-dispersive X-ray spectroscopy （EDX）, and X-ray diffraction （XRD）. The results show that SiO2/Na2O mole ratio plays an important role in the mechanical and morphological characteristics of geopolymers. Foam samples prepared in 28 d with a SiO2/Na2O mole ratio of 1.42 exhibit the greatest compressive strength of 2.52 MPa. Morphological analysis reveals that these foam geo-polymers appear the relatively optimized pore structure and distribution, which are beneficial to the structure stability. Moreover, a combina-tion of the Si/Al atomic ratio ranging between 1.47 and 1.94 with the Na/Al atomic ratio of about 1 produces the samples with high strength.展开更多
We outline probable and possible developments with wireless capsule endoscopy. It seems likely that capsule endoscopy will become increasingly effective in diagnostic gastrointestinal endoscopy. This will be attractiv...We outline probable and possible developments with wireless capsule endoscopy. It seems likely that capsule endoscopy will become increasingly effective in diagnostic gastrointestinal endoscopy. This will be attractive to patients especially for cancer or varices detection because capsule endoscopy is painless and is likely to have a higher take up rate compared to conventional colonoscopy and gastroscopy. Double imager capsules with increased frame rates have been used to image the esophagus for Barrett's and esophageal varices. The image quality is not bad but needs to be improved if it is to become a realistic substitute for flexible upper and lower gastrointestinal endoscopy. An increase in the frame rate, angle of view, depth of field, image numbers, duration of the procedure and improvements in illumination seem likely. Colonic, esophageal and gastric capsules will improve in quality, eroding the supremacy of flexible endoscopy, and become embedded into screening programs. Therapeutic capsules will emerge with brushing, cytology, fluid aspiration, biopsy and drug delivery capabilities. Electrocautery may also become possible. Diagnostic capsules will integrate physiological measurements with imaging and optical biopsy, and immunologic cancer recognition. Remote control movement will improve with the use of magnets and/or electrostimulation and perhaps electromechanical methods. External wireless commands will influence capsule diagnosis and therapy and will increasingly entail the use of real-time imaging. However, it should be noted that speculations about the future of technology in any detail are almost always wrong.展开更多
In this paper, we reported nano-scale SiOx coatings deposited on polyethylene terephthalate （PET） webs by microwave surface-wave assisted plasma enhanced chemical vapor deposition for the purpose of improving their ...In this paper, we reported nano-scale SiOx coatings deposited on polyethylene terephthalate （PET） webs by microwave surface-wave assisted plasma enhanced chemical vapor deposition for the purpose of improving their barrier properties. Oxygen （O2） and hexamethyl- disiloxane （HMDSO） were employed as oxidant gas and Si monomer during SiOx deposition, re- spectively. Analysis by Fourier transform infrared spectroscope （FTIR） for chemical structure and observation by atomic force microscopy （AFM） for surface morphology of SiO~ coatings demon- strated that both chemical compounds and surface feature of coatings have a remarkable influence on the coating barrier properties. It is noted that the processing parameters play a critical role in the barrier properties of coatings. After optimization of the SiOx coatings deposition conditions, i.e. the discharge power of 1500 W, 2 ： 1 of O2 ： HMDSO ratio and working pressure of 20 Pa, a better barrier property was achieved in this work.展开更多
An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be...An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials （a-SiOx：H） are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiOx：H materials is discussed in detail.展开更多
基金supported by the National Natural Science Foundation of China(22279026)the National Key Research and Development Program of China(2022YFE0138900)+2 种基金the Young Elite Scientist sponsorship program by CAST(no.20200148)the Natural Science Funds of Heilongjiang Province(YQ2021B003)the Fundamental Research Funds for the Central Universities(grant no.HIT.OCEF.2022017).
文摘Micrometer-sized silicon oxide(SiO)anodes encounter challenges in large-scale applications due to significant volume expansion during the alloy/de-alloy process.Herein,an innovative deep eutectic electrolyte derived from succinonitrile is introduced to enhance the cycling stability of SiO anodes.Density functional theory calculations validate a robust ion-dipole interaction between lithium ions(Li^(+))and succinonitrile(SN).The cosolvent fluoroethylene carbonate(FEC)optimizes the Li^(+)solvation structure in the SN-based electrolyte with its weakly solvating ability.Molecular dynamics simulations investigate the regulating mechanism of ion-dipole and cation-anion interaction.The unique Li^(+)solvation structure,enriched with FEC and TFSI^(-),facilitates the formation of an inorganic-organic composite solid electrolyte interphase on SiO anodes.Micro-CT further detects the inhibiting effect on the SiO volume expansion.As a result,the SiO|LiCoO_(2) full cells exhibit excellent electrochemical performance in deep eutectic-based electrolytes.This work presents an effective strategy for extending the cycle life of SiO anodes by designing a new SN-based deep eutectic electrolyte.
基金Project supported by the National High-Tech Research and Development Program of China (2009AA05Z313)National Natural Science Foundation of China (50872052)Foundation of Jiangsu Province of China for College Postgraduate Students in Innovation Engineering (CX07B_083z)
文摘A series of CeO2/SiO2 and SixCe1–xO2 complex oxides supported on an activated Al2TiO5-TiO2-SiO2 complex phase (ATS) ceramics were prepared by step impregnation and co-impregnation methods, and characterized by N2-BET, XRD, SEM and NH3-TPD techniques. The effects of reaction temperature, CeO2/SiO2 loadings and Si/Ce molar ratio on the granular catalysts for NO selective catalytic reduction with ammonia (NH3-SCR) were studied. Results indicated that both CeO2/SiO2/ATS and CeO2/ATS catalysts showed the same ac...
文摘A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately 15μm thickness for the stiff backplate.The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB(5.6mV/Pa) to -55dB(1.78mV/Pa) under the frequency from 500Hz to 10kHz,and shows a gradual increase at higher frequency.The cut-off frequency is above 20kHz.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1204000)the Beijing National Natural Science Foundation(Grant No.Z230006)the National Natural Science Foundation of China(Grant Nos.12304155 and 12274405).
文摘The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-performance spintronic memory and computing applications.Here,we report the development of the PMA superlattice[Pt/Co/W]_(n)that can be sputtered-deposited on commercial oxidized silicon substrates and has giant SOTs,strong uniaxial PMA of≈9.2 Merg/cm^(3),and rigid macrospin performance.The damping-like and field-like SOTs of the[Pt/Co/W]_(n)superlattices exhibit a linear increase with the repeat number n and reach the giant values of 225%and-33%(two orders of magnitude greater than that in clean-limit Pt)at n=12,respectively.The damping-like SOT is also of the opposite sign and much greater in magnitude than the field-like SOT,regardless of the number n.These results clarify that the spin current that generates SOTs in the[Pt/Co/W]_(n)superlattices arises predominantly from the spin Hall effect rather than bulk Rashba spin splitting,providing a unified understanding of the SOTs in these superlattices.We also demonstrate deterministic switching in thickerthan-50-nm PMA[Pt/Co/W]_(12)superlattices at a low current density.This work establishes the[Pt/Co/W]_(n)superlattice as a compelling material candidate for ultra-fast,low-power,long-retention nonvolatile spintronic memory and computing technologies.
基金Project supported by the Development Plan for Academics in Huanshui,the Natural Science Foundation of the Henan Province(182300410169,182102210201)the Support Project of Scientific and Technological Innovation Talents of Universities in Henan Province(19HASTIT023).
文摘Cerium oxide/silicon rubber was prepared via mechanical blending.Mechanical and frictional properties,as well as thermal stability after thermo-oxidative ageing were investigated in this rubber composite.3D surface profilometry,scanning electron microscopy(SEM)and thermogravimetry analysis(TGA)were used to study the friction surface characteristics,friction mechanism and thermal stability,respectively.Additionally,swelling experiments were carried out to investigate the variation of crosslinking density.After thermo-oxidative ageing,the tear strength of cerium oxide/silicon rubber decreases.However,in the early ageing stage,improvements in tensile strength,elongation at break,and frictional performance are caused by crosslinking density increments.Moreover,the addition of cerium oxide remarkably improves the re-cross linking degree during ageing process,which in turn decreases the number of holes on the friction surface and endows the silicon rubber with better mechanical and frictional properties,as well as thermo-oxidative ageing resistance.
基金the financial support from the National Natural Science Foundation of China(NSFC)(No.51274154)the State Key Laboratory of Development and Application Technology of Automotive Steels(Baosteel Group)
文摘Simultaneous thermal analysis（STA） was used to investigate the effects of silicon content on the oxidation kinetics of silicon-containing steels under an atmosphere and heating procedures similar to those used in industrial reheating furnaces for the production of hot-rolled strips. Our results show that when the heating temperature was greater than the melting point of Fe2SiO4, the oxidation rates of steels with different silicon contents were the same; the total mass gain decreased with increasing silicon content, whereas it increased with increasing oxygen content. The oxidation rates for steels with different silicon contents were constant with respect to time under isothermal conditions. In addition, the starting oxidation temperature, the intense oxidation temperature, and the finishing oxidation temperature increased with increasing silicon content; the intense oxidation temperature had no correlation with the melting of Fe2SiO4. Moreover, the silicon distributed in two forms： as Fe2SiO4 at the interface between the innermost layer of oxide scale and the iron matrix, and as particles containing silicon in grains and grain boundaries in the iron matrix.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274106
文摘We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon （LOCOS） and deep trench isolation （DTI）. The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate （C/S） junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.
基金the National Natural Science Foundation of China(No.50632050)
文摘Nafion/Silicon oxide composite membranes were produced via in situ sol-gel reaction of tetraethylorthosilicate （TEOS） in Nafion membranes. The physicochemical properties of the membranes were studied by FT-IR,TG-DSC and tensile strength. The results show that the silicon oxide is compatible with the Nation membrane and the thermo stability of Nation/Silicon oxide composite membrane is higher than that of Nation membrane. Furthermore, the tensile strength of Nation/Silicon oxide composite membrane is similar to that of the Nation membrane. The proton conductivity of Nation/Silicon oxide composite membrane is higher than that of Nation membrane. When the Nation/Silicon oxide composite membrane was employed as an electrolyte in H2/O2 PEMFC, a higher current density value （1 000 mA/cm^2 at 0.38 V） than that of the Nafion1135 membrane （100 mA/cm^2 at 0.04 V） was obtained at 110 ℃.
基金Project supported by the National Natural Science Foundation of China (Grant No 50772107)the National High Technology Development Program of China (Grant No 2006AA05Z118)
文摘The surface oxidation of silicon （Si） wafers by atomic oxygen radical anions （O- anions） and the preparation of metal-oxide-semiconductor （MOS） capacitors on the O-oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al2sO64]^4＋·4O^- （Cl2A7-O^- for short）. After it has been irradiated by an O- anion bean： （0.5 μA/cm^2） at 300℃ for 1-10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32 nm. X-ray photoelectron spectroscopy （XPS） results reveal that the oxide layer is of a mixture of SiO2, Si2 O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of 〈Al electrode/SiOx/Si〉 are investigated by measuring capacitance-voltage （C - V） and current-voltage （I - V） curves. The oxide charge density is about 6.0 × 10^1 cm^-2 derived from the （C - V curves. The leakage current density is in the order of 10^-6 A/cm^2 below 4 MV/cm, obtained from the I - V curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.
文摘Based on the quantum confinement-luminescence center model, to ensembles of spherical silicon nanocrystals (nc-Si) containing two kinds of luminescence centers (LCs) in the layers surrounding the nc-Si, the relationship between the photoluminescence (PL) and the thickness of the layer is studied with the excitation energy flux density as a parameter. When there is no layer surrounding the nc-Si, the electron-heavy hole pair can only recombine inside the nc-Si, then the PL blueshift with reducing particle sizes roughly accords with the rule predicted by the quantum confinement model of Canham. When there presences a layer, some of the carriers may tunnel into it and recombine outside the nc-Si at the LCs to emit visible light. The thicker the layer is, the higher the radiative recombination rate occurred outside the nc-Si will be. When the central scale of the nc-Si is much smaller than the critical scale, the radiative recombination rate outside the nc-Si dominates, and visible PL will be possible for some nc-Si samples with big average radius, greater than 4 nm, for example. When there is only one kind of LC in the layer, the PL peak position does not shift with reducing particle sizes. All these conclusions are in accord with the experimental results. When there are two or more kinds of LCs in the layer, the PL peak position energy and intensity swing with reducing particle sizes.
基金Funded partially by the National Basic Research Program of China(No.2011CBA00700)
文摘In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PHy The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The film with refractive index of 1.99, band gap of 2.6eV and conductivity of 10-7 S/cm was obtained, which was suitable for the intermediate reflector layer.
文摘Photoluminescence （PL） characteristics of Tb-doped silicon rich oxide （SRO） films prepared by DC-sputtering and post-annealing processes were studied. The silicon richness of the SRO film could be controlled by varying the sputtering power and oxygen concentration in the sputtering chamber. PL emission from the as-deposited sample was found to be composed of Th^3 ＋ intra 4f transition-related emission and the silicon nano particle-related broad bandwidth emission. Thermal annealing could significantly improve the material properties as well as the PL signals. PL properties depended strongly upon the annealing scheme and silicon richness. Annealing at high temperatures （900- 1050℃） enhanced Tbrelated emission and suppressed the silicon nano particle-related emission. For samples with different silicon richness, annealing at 950 ℃ was found to produce higher PL signals than at other temperatures. It was attributed more to lifetime quenching than to concentration quenching. Electroluminescent （EL） devices with a capacitor structure were fabricated, the optimized process condition for the EL device was found to be different from that of PL emission. Among the annealing schemes that were used, wet oxidation was found to improve device performance the most, whereas, dry oxidation was found to improve material property the most. Wet oxidation allowed the breakdown electrical field to increase significantly and to reach above 10 mV·cm^-1. The EL spectra showed a typical Th^3＋ emission, agreeing well with the PL spectra. The I-V measurements indicated that for 100 nm thick film, the Fowler-Nordheim tunneling started at an electrical field of around 6 mV·cm^-1 and the light emission became detectable at a current density of around 10-4 A·cm^-2 and higher. Strong electroluminescence light emission was detected when the electrical field was close to 10 mV·cm^-1.
文摘Anovel silicon containing carbon precursor was synthesised by reacting a petroleum pitchfraction and polydimethylsilane. The precursor containing about 26wt% Si was meltspunintofibresand then oxidativelystabilised in airto renderthefibresinfusiblebefore pyrolysisat1200℃underinertatmospheretoproduceC Sialloy( CSA) fibres. Theextentofstabili sation wasfoundto becriticalto the development of mechanicalstrength of thefibres which varied with heattreatmenttemperature, showing a maximum at 1200 ℃when thestrength was 1 4 1 6 GPa. Thesestrengthsareremarkably goodconsideringthelow modulus whichis duetothe quite high failurestrains. Thefibrescanshow excellentresistanceto oxidation if given an initialshortexposureto oxygen athigh temperature duetotheformation of an im perceptiblelayer of silica. CSAfibreshavethe advantagesof both carbon fibresand SiCfi bres,thusextended application areascan beenvisaged .
文摘The stability of the photoluminescence (PS) has evidently improvedby HNO3 chemical oxidation The PL intensity and peak wavelength of PS were changed with theHNO3 of HNO3 concentration and oxidation time. Being different from other oxidation time. Being different from other oxidized ways, the PSoxidized by HNO3 remains remains sensitive to adsorbates. FTTR spectroscopic data suggest that these phenomena are attributed to the presence of HSi(SiaO30a)(a≤3)layer on PS surface.
基金This work was financially supported by the National Research Foundation of Korea financially(NRF)(No.NRF-2022R1F1A1069039)the Core Research Institute(CRI)Program,the Basic Science Research Program through the National Research Foundation of Korea(NRF),Ministry of Education(No.NRF-2017R1A6A1A06015181)the Technology Innovation Program(No.20011905)funded by the Ministry of Trade,Industry&Energy(MOTIE,Korea).
文摘Silicon oxide(SiO_(x))has received remarkable attention as a next-generation battery material;however,the sudden decrease in the cycling retention constitutes a significant challenge in facilitating its application.Tris(2,2,2-trifluoroethyl)phosphite(TTFP),which can control parasitic reactions such as the pulverization of SiO_(x)anode materials and electrolyte decomposition,has been proposed to improve the lifespan of the cell.The electrochemical reduction of TTFP results in solid-electrolyte interphase(SEI)layers that are mainly composed of LiF,which occur at a higher potential than the working potential of the SiO_(x)anode and carbonate-based solvents.The electrolyte with TTFP exhibited a substantial improvement in cycling retention after 100 cycles,whereas the standard electrolyte showed acutely decreased retention.The thickness of the SiO_(x)anode with TTFP also changed only slightly without any considerable delamination spots,whereas the SiO_(x)anode without TTFP was prominently deformed by an enormous volume expansion with several internal cracks.The cycled SiO_(x)anode with TTFP exhibited less increase in resistance after cycling than that in the absence of TTFP,in addition to fewer decomposition adducts in corresponding X-ray photoelectron spectroscopy(XPS)analyses between the cycled SiO_(x)anodes.These results demonstrate that TTFP formed SEI layers at the SiO_(x)interface,which substantially reduced the pulverization of the SiO_(x)anode materials;in addition,electrolyte decomposition at the interface decreased,which led to improved cycling retention.
基金financially supported by the Research Fund for the Doctoral Program of Higher Education of China(No.20120023110011)the Fundamental Research Funds for the Central Universities of China(Nos.2009KH09 and 2009QH02)
文摘Geopolymers are three-dimensional aluminosilicates formed in a short time at low temperature by geopolymerization. In this pa-per, alkali-activated foam geopolymers were fabricated from circulating fluidized bed fly ash （CFA）, and the effect of SiO2/Na2O mole ratio （0.91-1.68） on their properties was studied. Geopolymerization products were characterized by mechanical testing, scanning electron mi-croscopy （SEM）, energy-dispersive X-ray spectroscopy （EDX）, and X-ray diffraction （XRD）. The results show that SiO2/Na2O mole ratio plays an important role in the mechanical and morphological characteristics of geopolymers. Foam samples prepared in 28 d with a SiO2/Na2O mole ratio of 1.42 exhibit the greatest compressive strength of 2.52 MPa. Morphological analysis reveals that these foam geo-polymers appear the relatively optimized pore structure and distribution, which are beneficial to the structure stability. Moreover, a combina-tion of the Si/Al atomic ratio ranging between 1.47 and 1.94 with the Na/Al atomic ratio of about 1 produces the samples with high strength.
文摘We outline probable and possible developments with wireless capsule endoscopy. It seems likely that capsule endoscopy will become increasingly effective in diagnostic gastrointestinal endoscopy. This will be attractive to patients especially for cancer or varices detection because capsule endoscopy is painless and is likely to have a higher take up rate compared to conventional colonoscopy and gastroscopy. Double imager capsules with increased frame rates have been used to image the esophagus for Barrett's and esophageal varices. The image quality is not bad but needs to be improved if it is to become a realistic substitute for flexible upper and lower gastrointestinal endoscopy. An increase in the frame rate, angle of view, depth of field, image numbers, duration of the procedure and improvements in illumination seem likely. Colonic, esophageal and gastric capsules will improve in quality, eroding the supremacy of flexible endoscopy, and become embedded into screening programs. Therapeutic capsules will emerge with brushing, cytology, fluid aspiration, biopsy and drug delivery capabilities. Electrocautery may also become possible. Diagnostic capsules will integrate physiological measurements with imaging and optical biopsy, and immunologic cancer recognition. Remote control movement will improve with the use of magnets and/or electrostimulation and perhaps electromechanical methods. External wireless commands will influence capsule diagnosis and therapy and will increasingly entail the use of real-time imaging. However, it should be noted that speculations about the future of technology in any detail are almost always wrong.
基金supported financially by National Natural Science Foundation of China(Nos.1117502411375031)+8 种基金Beijing Natural Science Foundation(No.1112012)the National Science & Technology Pillar Program for the 12th Five-year Plan2011BAD24B01Beijing Education Committee Foundation of Science and Technology(Nos.KM2011100015008KM201010015005)BIGC Key Project(No.23190113051)PHR20110516PHR201107145Fujian Provincial Department of Science and Technology Key Project of China(No.2012H0008)
文摘In this paper, we reported nano-scale SiOx coatings deposited on polyethylene terephthalate （PET） webs by microwave surface-wave assisted plasma enhanced chemical vapor deposition for the purpose of improving their barrier properties. Oxygen （O2） and hexamethyl- disiloxane （HMDSO） were employed as oxidant gas and Si monomer during SiOx deposition, re- spectively. Analysis by Fourier transform infrared spectroscope （FTIR） for chemical structure and observation by atomic force microscopy （AFM） for surface morphology of SiO~ coatings demon- strated that both chemical compounds and surface feature of coatings have a remarkable influence on the coating barrier properties. It is noted that the processing parameters play a critical role in the barrier properties of coatings. After optimization of the SiOx coatings deposition conditions, i.e. the discharge power of 1500 W, 2 ： 1 of O2 ： HMDSO ratio and working pressure of 20 Pa, a better barrier property was achieved in this work.
基金supported by the National Basic Research Program of China(Grant Nos.2011CBA00705,2011CBA00706,and 2011CBA00707)the National Natural Science Foundation of China(Grant No.60976051)the Program for New Century Excellent Talents in University of China(Grant No.NCET-08-0295)
文摘An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials （a-SiOx：H） are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiOx：H materials is discussed in detail.
