以具有三维骨架结构的环氧树脂大孔聚合物为整体型模板,利用硅酸酯原位溶胶-凝胶过程和高温烧结法制备出大尺寸SiO2大孔材料,通过水热法用铝酸钠对材料进行表面改性,得到铝掺杂SiO2大孔材料(Al-SiO2),并用SEM、FTIR和XPS对大孔材料进行...以具有三维骨架结构的环氧树脂大孔聚合物为整体型模板,利用硅酸酯原位溶胶-凝胶过程和高温烧结法制备出大尺寸SiO2大孔材料,通过水热法用铝酸钠对材料进行表面改性,得到铝掺杂SiO2大孔材料(Al-SiO2),并用SEM、FTIR和XPS对大孔材料进行了表征.以Cu2+和Pb2+为模拟污染物,研究改性大孔材料的吸附性能.结果表明:改性大孔材料对Cu2+和Pb2+均具有良好吸附能力;Al-SiO2对Cu2+和Pb2+的最大吸附量分别为71mg.g-1和138mg.g-1,0.100 g Al-SiO2对100mL 50mg.L-1水溶液中Pb2+的去除率达到95.3%,重复使用3次后的去除率保持在89.8%.展开更多
The effect of particle size of silica, as catalyst binder, on the chemical and mechanical properties of iron based FT catalyst was studied in this work. The samples were characterized using XRD, BET, TEM, FT-IR, and H...The effect of particle size of silica, as catalyst binder, on the chemical and mechanical properties of iron based FT catalyst was studied in this work. The samples were characterized using XRD, BET, TEM, FT-IR, and H2-TPR, re- spectively. The attrition resistance and the FT activity were tested. Si-8-Si-15 catalysts prepared with 8-15 nm silica sol show good attrition resistance （attrition loss 〈 4%）, especially Si-13 with an attrition loss of 1.89%. He- matite appeared in XRD patterns when silica sol above 15 nm is used. TEM micrographs show that no obvious SiO2 particles appear when silica sol particle with size less than 8 nm was used, but SiO2 particles coated with small ferrihydrite particles appear when silica sol above 8 nm was used. Si-O-Si vibration peak in FT-IR spectra increases with increasing silica sol size. Samples prepared with silica sol show good stability of FT reactions, and the average molecular weight of FT products increases with the increase of SiO2 particle.展开更多
In this paper,the replication process of large area nanoimprint stamp with small critical dimension(CD) loss was investigated,using the thin residual layer nanoimprint lithography(NIL) technology.The residual layer th...In this paper,the replication process of large area nanoimprint stamp with small critical dimension(CD) loss was investigated,using the thin residual layer nanoimprint lithography(NIL) technology.The residual layer thickness was optimized by changing the spin-coated resist thickness.The dependences of the residual layer etching rate on gas flow,chamber pressure,and RF power were investigated,and the optimized process conditions were established.By means of the thin residual layer NIL technique and optimized residual layer etching process,large area stamp with small CD loss and multi-orientation patterns was successfully replicated on 2-inch SiO2/Si wafer.The CD loss was controlled within 5 nm.The replicated stamp showed high performance in the patterning with thermal NIL.The replication process reported in this work could also be used to fabricate large area nanostructures with small CD loss.展开更多
文摘以具有三维骨架结构的环氧树脂大孔聚合物为整体型模板,利用硅酸酯原位溶胶-凝胶过程和高温烧结法制备出大尺寸SiO2大孔材料,通过水热法用铝酸钠对材料进行表面改性,得到铝掺杂SiO2大孔材料(Al-SiO2),并用SEM、FTIR和XPS对大孔材料进行了表征.以Cu2+和Pb2+为模拟污染物,研究改性大孔材料的吸附性能.结果表明:改性大孔材料对Cu2+和Pb2+均具有良好吸附能力;Al-SiO2对Cu2+和Pb2+的最大吸附量分别为71mg.g-1和138mg.g-1,0.100 g Al-SiO2对100mL 50mg.L-1水溶液中Pb2+的去除率达到95.3%,重复使用3次后的去除率保持在89.8%.
基金financial support from Shenhua Group and Zhejiang University of Technology is highly acknowledged for the catalyst test
文摘The effect of particle size of silica, as catalyst binder, on the chemical and mechanical properties of iron based FT catalyst was studied in this work. The samples were characterized using XRD, BET, TEM, FT-IR, and H2-TPR, re- spectively. The attrition resistance and the FT activity were tested. Si-8-Si-15 catalysts prepared with 8-15 nm silica sol show good attrition resistance （attrition loss 〈 4%）, especially Si-13 with an attrition loss of 1.89%. He- matite appeared in XRD patterns when silica sol above 15 nm is used. TEM micrographs show that no obvious SiO2 particles appear when silica sol particle with size less than 8 nm was used, but SiO2 particles coated with small ferrihydrite particles appear when silica sol above 8 nm was used. Si-O-Si vibration peak in FT-IR spectra increases with increasing silica sol size. Samples prepared with silica sol show good stability of FT reactions, and the average molecular weight of FT products increases with the increase of SiO2 particle.
基金supported by the National Basic Research Program of China ("973" Program) (Grant No. 2011CB302105)the Fundamental Research Funds for the Central Universities (Grant No. DUT10ZD104)
文摘In this paper,the replication process of large area nanoimprint stamp with small critical dimension(CD) loss was investigated,using the thin residual layer nanoimprint lithography(NIL) technology.The residual layer thickness was optimized by changing the spin-coated resist thickness.The dependences of the residual layer etching rate on gas flow,chamber pressure,and RF power were investigated,and the optimized process conditions were established.By means of the thin residual layer NIL technique and optimized residual layer etching process,large area stamp with small CD loss and multi-orientation patterns was successfully replicated on 2-inch SiO2/Si wafer.The CD loss was controlled within 5 nm.The replicated stamp showed high performance in the patterning with thermal NIL.The replication process reported in this work could also be used to fabricate large area nanostructures with small CD loss.
