Highly homogeneous, well dispersed SiO_2@Au@TiO_2(SAT) microspheres decorated with Au nanoparticles(AuNPs) were prepared and incorporated into the photoanode with an optimized concentration gradientascent. The effects...Highly homogeneous, well dispersed SiO_2@Au@TiO_2(SAT) microspheres decorated with Au nanoparticles(AuNPs) were prepared and incorporated into the photoanode with an optimized concentration gradientascent. The effects of SAT microspheres and the gradient-ascent architecture on the light absorption and the photoelectric conversion efficiency(PCE) of the dye-sensitized solar cells(DSSCs) were investigated.Studies indicate that the introduction of SAT microspheres and the gradient-ascent architecture in the photoanode significantly enhance the light scattering and harvesting capability of the photoanode. The DSSC with the optimized SAT gradient-ascent photoanode has the maximum short circuit current density(J_(sc)) of 17.7 mA cm^(-2) and PCE of 7.75%, remarkably higher than those of the conventional DSSC by 23.7%and 28.0%, respectively. This significantly enhancement of the performance of the DSSC can be attributed to the excellent light reflection/scattering of SAT, the localized surface plasma resonance(LSPR) effect of AuNPs within the microspheres, and the gradient-ascent architecture of SAT microspheres inside the photoanode. This study demonstrates that the tri-synergies of the scattering of SAT microspheres, the LSPR of AuNPs and the gradient-ascent architecture can effectively improve the PCE of DSSC.展开更多
The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra...The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO2 films. The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.展开更多
基金supported financially by the National Natural Science Foundation of China (Nos.51572102,11504101,11604089 and 11364018)
文摘Highly homogeneous, well dispersed SiO_2@Au@TiO_2(SAT) microspheres decorated with Au nanoparticles(AuNPs) were prepared and incorporated into the photoanode with an optimized concentration gradientascent. The effects of SAT microspheres and the gradient-ascent architecture on the light absorption and the photoelectric conversion efficiency(PCE) of the dye-sensitized solar cells(DSSCs) were investigated.Studies indicate that the introduction of SAT microspheres and the gradient-ascent architecture in the photoanode significantly enhance the light scattering and harvesting capability of the photoanode. The DSSC with the optimized SAT gradient-ascent photoanode has the maximum short circuit current density(J_(sc)) of 17.7 mA cm^(-2) and PCE of 7.75%, remarkably higher than those of the conventional DSSC by 23.7%and 28.0%, respectively. This significantly enhancement of the performance of the DSSC can be attributed to the excellent light reflection/scattering of SAT, the localized surface plasma resonance(LSPR) effect of AuNPs within the microspheres, and the gradient-ascent architecture of SAT microspheres inside the photoanode. This study demonstrates that the tri-synergies of the scattering of SAT microspheres, the LSPR of AuNPs and the gradient-ascent architecture can effectively improve the PCE of DSSC.
文摘The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO2 films. The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.
