In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliabi...In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliability in high humidity environment. Samples with different thicknesses of Si 3 N 4 and SiO 2 were prepared on Pyrex 7740 glass substrates and characterized by isothermal and high humidity charge decay. The results of experiment approved that the PECVD SiO 2 /Si 3 N 4 double layers electrets on glass substrate has as good chargeability and charge stability in high temperature and high humidity environment as thermal oxidation or APCVD/LPCVD ones on silicon substrates. The experiment results indicated that a Si 3 N 4 layer no less than 50 nm is necessary for good charge stability in high temperature and a Si 3 N 4 layer thicker than 500 nm decreases the chargeability. Even a 2 nm Si 3 N 4 layer is enough to significantly improve the charge stability in high humidity environment. Thick SiO 2 layer can increase the surface potential of electrets under the same charging condition and its charge stability in high temperature. However, the electrets with high surface potential also exhibit poor uniformity of charge stability in high humidity environment.展开更多
The Al0.85Ga0.15As layers buried below the GaAs core layer with and without the SiO2 layer were successfully oxidized in a wet ambient environment.The experimental results show that the SiO2 layer has little impact on...The Al0.85Ga0.15As layers buried below the GaAs core layer with and without the SiO2 layer were successfully oxidized in a wet ambient environment.The experimental results show that the SiO2 layer has little impact on the lateral-wet-oxidation rate of the Al0.85Ga0.15 As layer.The contrast of the SEM image of the oxidized regions and the absence of As-related Raman peaks for samples with the SiO2 layer arise from the removal of As ingredients with the largest atomic number,which leads to improvements in the thermal stability of the oxidized layer.The PL intensities of samples with the SiO2 layer are much stronger than those without the SiO2 layer.The PL emission peak is almost unshifted with a slight broadening under the protection of the SiO2 layer.This is attributed to the SiO2 layer preventing oxidation damage to the GaAs capping layer.展开更多
基金supported by the National Basic Research Program of China ("973" Program) (Grant No. 2009CB320300)
文摘In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliability in high humidity environment. Samples with different thicknesses of Si 3 N 4 and SiO 2 were prepared on Pyrex 7740 glass substrates and characterized by isothermal and high humidity charge decay. The results of experiment approved that the PECVD SiO 2 /Si 3 N 4 double layers electrets on glass substrate has as good chargeability and charge stability in high temperature and high humidity environment as thermal oxidation or APCVD/LPCVD ones on silicon substrates. The experiment results indicated that a Si 3 N 4 layer no less than 50 nm is necessary for good charge stability in high temperature and a Si 3 N 4 layer thicker than 500 nm decreases the chargeability. Even a 2 nm Si 3 N 4 layer is enough to significantly improve the charge stability in high humidity environment. Thick SiO 2 layer can increase the surface potential of electrets under the same charging condition and its charge stability in high temperature. However, the electrets with high surface potential also exhibit poor uniformity of charge stability in high humidity environment.
基金supported by the National Research Project of China(Nos.60990315,60625402,61161130527)
文摘The Al0.85Ga0.15As layers buried below the GaAs core layer with and without the SiO2 layer were successfully oxidized in a wet ambient environment.The experimental results show that the SiO2 layer has little impact on the lateral-wet-oxidation rate of the Al0.85Ga0.15 As layer.The contrast of the SEM image of the oxidized regions and the absence of As-related Raman peaks for samples with the SiO2 layer arise from the removal of As ingredients with the largest atomic number,which leads to improvements in the thermal stability of the oxidized layer.The PL intensities of samples with the SiO2 layer are much stronger than those without the SiO2 layer.The PL emission peak is almost unshifted with a slight broadening under the protection of the SiO2 layer.This is attributed to the SiO2 layer preventing oxidation damage to the GaAs capping layer.
