The fabrication process dependent effects on single event effects （SEEs） are investigated in a commercial silicon- germanium heterojunction bipolar transistor （SiGe HBT） using three-dimensional （3D） TCAD simulat...The fabrication process dependent effects on single event effects （SEEs） are investigated in a commercial silicon- germanium heterojunction bipolar transistor （SiGe HBT） using three-dimensional （3D） TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61274106,11175138,and 61601352)
文摘The fabrication process dependent effects on single event effects （SEEs） are investigated in a commercial silicon- germanium heterojunction bipolar transistor （SiGe HBT） using three-dimensional （3D） TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.
