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新型NO_2化学传感器:碳化硅纳米管(英文) 被引量:1
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作者 丁瑞雪 杨银堂 刘帘曦 《计算物理》 EI CSCD 北大核心 2010年第5期779-784,共6页
气体吸附对碳化硅纳米管的电子结构的影响是理解碳化硅纳米管气敏传感器工作机理的基础.基于密度泛函理论,利用CASTEP软件包计算NO2气体吸附前后的碳化硅纳米管的结构及其电子结构.结果表明,NO2气体与碳化硅纳米管间形成了稳定的吸附,... 气体吸附对碳化硅纳米管的电子结构的影响是理解碳化硅纳米管气敏传感器工作机理的基础.基于密度泛函理论,利用CASTEP软件包计算NO2气体吸附前后的碳化硅纳米管的结构及其电子结构.结果表明,NO2气体与碳化硅纳米管间形成了稳定的吸附,并明显的增强了碳化硅纳米管的导电特性.碳化硅纳米管是制备气体传感器的理想材料之一,为开发应用于NO2气体检测的碳化硅纳米管提供必要的理论支持. 展开更多
关键词 碳化硅纳米管 NO2气敏传感器 密度泛函理论
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Silicon carbide nanotubes with special morphology prepared by super critical hydrothermal method and photoluminescence character 被引量:1
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作者 郭池 唐元洪 +1 位作者 裴立宅 张勇 《Journal of Shanghai University(English Edition)》 CAS 2011年第6期538-541,共4页
Silicon carbide nanotubes(SiCNTs) with special morphology synthesized by supercritical hydrothermal method at 470 C and 8 MPa have been reported in this paper.SiCNTs with special morphology were characterized by tra... Silicon carbide nanotubes(SiCNTs) with special morphology synthesized by supercritical hydrothermal method at 470 C and 8 MPa have been reported in this paper.SiCNTs with special morphology were characterized by transmission electron microscopy(TEM) and high-resolution TEM(HRTEM).There are two kinds of silicon carbide with special morphology:One is oval SiCNTs with small aspect ratio,the other is bamboo cone-shape structure.SiCNTs have been analyzed by fluorescence spectrometer.The results indicate that the SiCNTs have strong photoluminescence(PL) property.The SiCNTs with oval shape are one kind of intermediate state of growth process of nanotube.The growth mechanism of silicon nanotubes has been proposed based on experiment data.The investigations of growth mechanism of SiCNTs with bamboo structure show that the defect produced in the growth process play the important role in SiCNTs with special structure. 展开更多
关键词 silicon carbide nanotubes(sicnts) supercritical hydrothermal method photoluminescence(PL)
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First Principles Simulation of Molecular Oxygen Adsorption on SiC Nanotubes
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作者 M.D.Ganji B.Ahaz 《Communications in Theoretical Physics》 SCIE CAS CSCD 2010年第4期742-748,共7页
We study the binding of molecular oxygen to a (5, 0) single walled SiC nanotube, by means of density functional calculations. The center of a hexagon of silicon and carbon atoms in sites on SiCNT surfaces is the mos... We study the binding of molecular oxygen to a (5, 0) single walled SiC nanotube, by means of density functional calculations. The center of a hexagon of silicon and carbon atoms in sites on SiCNT surfaces is the most stable adsorption site for 02 molecule, with a binding energy of -38.22 eV and an average Si-O binding distance of 1.698 A. We have also tested the stability of the 02-adsorbed SiCNT/CNT with ab initio molecular dynamics simulation which have been carried out at room temperature. Furthermore, the adsorption of 02 on the single walled carbon nanotubes has been investigated. Our first-principles calculations predict that the 02 adsorptive capability of silicon carbide nanotubes is much better than that of carbon nanotubes. This might have potential for gas detection and energy storage. 展开更多
关键词 ADSORPTION oxygen molecule DFT sicnts CNTS sensors
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Band alignment in SiC-based one-dimensional van der Waals homojunctions
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作者 Xing-Yi Tan Lin-Jie Ding Da-Hua Ren 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第12期503-507,共5页
The density functional theory method is utilized to verify the electronic structures of SiC nanotubes(SiCNTs) and SiC nanoribbons(SiCNRs) one-dimensional(1D) van der Waals homojunctions(vdWh) under an applied axial st... The density functional theory method is utilized to verify the electronic structures of SiC nanotubes(SiCNTs) and SiC nanoribbons(SiCNRs) one-dimensional(1D) van der Waals homojunctions(vdWh) under an applied axial strain and an external electric field. According to the calculated results, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-II band alignment and robust electronic structures with different diameters or widths. Furthermore,the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-I band alignment, respectively, in a range of[-0.3,-0.1] V/A and [0.1, 0.3] V/A and change into metal when the electric field intensity is equal to or higher than0.4 V/A. Interestingly, the SiCNTs/SiCNRs 1D vdWhs have robust electronic structures under axial strain. These findings demonstrate theoretically that the SiCNTs/SiCNRs 1D vdWhs can be employed in nanoelectronics devices. 展开更多
关键词 sicnts/SiCNRs one-dimensional(1D)van der Waals homojunctions(vdWh) electronic structure external electric field axial strain
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Working mechanism of a SiC nanotube NO_2 gas sensor
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作者 丁瑞雪 杨银堂 刘帘曦 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第11期67-70,共4页
The working mechanism of sensors plays an important role in their simulation and design, which is the foundation of their applications. A model of a nanotube NO2 gas sensor system is established based on an (8, 0) s... The working mechanism of sensors plays an important role in their simulation and design, which is the foundation of their applications. A model of a nanotube NO2 gas sensor system is established based on an (8, 0) silicon carbide nanotube (SiCNT) with a NO2 molecule adsorbed. The transport properties of the system are studied with a method combining density functional theory (DFT) with the non-equilibrium Green's function (NEGF). The adsorbed gas molecule plays an important role in the transport properties of the gas sensor, which results in the formation of a transmission peak near the Fermi energy. More importantly, the adsorption leads to different voltage current characteristics of the sensor to that with no adsorption; the difference is large enough to detect the presence of NO2 gas. 展开更多
关键词 working mechanism sicnt gas sensor non-equilibrium Green's function
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