得益于高效率优势,混合SiC/Si有源钳位(active neutral point clamped,ANPC)三电平电路拓扑在光储发电系统中应用广泛。但传统混合SiC/Si功率模块中,Si器件的使用限制了效率提升,SiC器件引入后又可能导致热分布不均、电压过冲及振荡等...得益于高效率优势,混合SiC/Si有源钳位(active neutral point clamped,ANPC)三电平电路拓扑在光储发电系统中应用广泛。但传统混合SiC/Si功率模块中,Si器件的使用限制了效率提升,SiC器件引入后又可能导致热分布不均、电压过冲及振荡等问题。提出了一种综合设计方法,结合功率器件损耗均衡与功率模块布局寄生电感优化,以提高混合SiC/Si ANPC电路拓扑的功率模块性能。建立了功率模块损耗模型,并进行热性能优化,降低结温与芯片温差;构建了寄生电感模型,通过优化设计减小寄生电感;研制了基于ANPC拓扑的混合SiC/Si功率模块,并开展电热性能测试。实验结果验证了功率模块在损耗、寄生电感及热分布方面的显著优势。展开更多
mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by in...mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.展开更多
Silicon carbide (SiC) has been prepared by passing natural gas over (100) oriented hot Si substrate at different temperatures in the range 930~1000℃. Reaction times of 60 and 90 min are used.Depth profile, using Auge...Silicon carbide (SiC) has been prepared by passing natural gas over (100) oriented hot Si substrate at different temperatures in the range 930~1000℃. Reaction times of 60 and 90 min are used.Depth profile, using Auger Electron Spectroscopy, shows the formation of SiC under a thin coating of carbon for the samples prepared at 930 and 950℃. Annealing, at 1050℃ for 12 h,results in a more pronounced formation of SiC. It is found that at the temperature of 1000℃and reaction times of 60 and 90 min, a hard diamond-like coating is formed.展开更多
文摘得益于高效率优势,混合SiC/Si有源钳位(active neutral point clamped,ANPC)三电平电路拓扑在光储发电系统中应用广泛。但传统混合SiC/Si功率模块中,Si器件的使用限制了效率提升,SiC器件引入后又可能导致热分布不均、电压过冲及振荡等问题。提出了一种综合设计方法,结合功率器件损耗均衡与功率模块布局寄生电感优化,以提高混合SiC/Si ANPC电路拓扑的功率模块性能。建立了功率模块损耗模型,并进行热性能优化,降低结温与芯片温差;构建了寄生电感模型,通过优化设计减小寄生电感;研制了基于ANPC拓扑的混合SiC/Si功率模块,并开展电热性能测试。实验结果验证了功率模块在损耗、寄生电感及热分布方面的显著优势。
文摘mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.
文摘Silicon carbide (SiC) has been prepared by passing natural gas over (100) oriented hot Si substrate at different temperatures in the range 930~1000℃. Reaction times of 60 and 90 min are used.Depth profile, using Auger Electron Spectroscopy, shows the formation of SiC under a thin coating of carbon for the samples prepared at 930 and 950℃. Annealing, at 1050℃ for 12 h,results in a more pronounced formation of SiC. It is found that at the temperature of 1000℃and reaction times of 60 and 90 min, a hard diamond-like coating is formed.
