A ns Nd:YAG pulsed laser has been employed to produce plasma from the interaction with a dense target,generating continuum and UV and soft x-ray emission depending on the laser parameters and target properties.The las...A ns Nd:YAG pulsed laser has been employed to produce plasma from the interaction with a dense target,generating continuum and UV and soft x-ray emission depending on the laser parameters and target properties.The laser hits solid and gaseous targets producing plasma in high vacuum,which was investigated by employing a silicon carbide detector.The two different interaction mechanisms were studied,as well as their dependence on the atomic number.The photon emission from laser-generated plasma produced by solid targets,such as boron nitride(BN)and other elements(Al,Cu,Sn and Ta)and compounds such as polyethylene,has been compared with that coming from plasma produced by irradiating different gas-puff targets based on N_(2)and other gases(Ar,Xe,Kr,SF_(6)).The experimental results demonstrated that the yields are comparable and,in both cases,increase proportionally to the target atomic number.The obtained results,focusing the attention on the advantages and drawbacks of the employed targets,are presented and discussed.展开更多
Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specif...Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specific carrier lifetime, were induced to describe Z1/2 defects in simulation to calculate the charge collection efficiency versus bias voltage. Comparison between our calculation and the reported experimental results shows that an acceptable agreement was achieved, proving the feasibility of regarding Z1/2 defect as two individual defect levels. Such a treatment can simplify the simulation and may help to further investigate the detector degradation.展开更多
文中基于多种理论模型构建了4H-SiC SAM APD结构紫外光电探测器的基本物理模型。模拟研究了包括反向伏安特性、离化率、光谱响应在内的光电效应特性,并通过改变SAM结构各层厚度,得到了厚度与击穿电压、光谱响应的关系,从结果可以看出:减...文中基于多种理论模型构建了4H-SiC SAM APD结构紫外光电探测器的基本物理模型。模拟研究了包括反向伏安特性、离化率、光谱响应在内的光电效应特性,并通过改变SAM结构各层厚度,得到了厚度与击穿电压、光谱响应的关系,从结果可以看出:减小P+层厚度、增大N、N+层厚度可有效增大光电流,提高探测器性能。展开更多
文摘A ns Nd:YAG pulsed laser has been employed to produce plasma from the interaction with a dense target,generating continuum and UV and soft x-ray emission depending on the laser parameters and target properties.The laser hits solid and gaseous targets producing plasma in high vacuum,which was investigated by employing a silicon carbide detector.The two different interaction mechanisms were studied,as well as their dependence on the atomic number.The photon emission from laser-generated plasma produced by solid targets,such as boron nitride(BN)and other elements(Al,Cu,Sn and Ta)and compounds such as polyethylene,has been compared with that coming from plasma produced by irradiating different gas-puff targets based on N_(2)and other gases(Ar,Xe,Kr,SF_(6)).The experimental results demonstrated that the yields are comparable and,in both cases,increase proportionally to the target atomic number.The obtained results,focusing the attention on the advantages and drawbacks of the employed targets,are presented and discussed.
基金Project supported by the National Key R&D Program of China(Grant No.2016YFB0400400)
文摘Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specific carrier lifetime, were induced to describe Z1/2 defects in simulation to calculate the charge collection efficiency versus bias voltage. Comparison between our calculation and the reported experimental results shows that an acceptable agreement was achieved, proving the feasibility of regarding Z1/2 defect as two individual defect levels. Such a treatment can simplify the simulation and may help to further investigate the detector degradation.
文摘文中基于多种理论模型构建了4H-SiC SAM APD结构紫外光电探测器的基本物理模型。模拟研究了包括反向伏安特性、离化率、光谱响应在内的光电效应特性,并通过改变SAM结构各层厚度,得到了厚度与击穿电压、光谱响应的关系,从结果可以看出:减小P+层厚度、增大N、N+层厚度可有效增大光电流,提高探测器性能。
