We investigate the effect of ozone(O_(3))oxidation of silicon carbide(SiC)on the flat-band voltage(Vfb)stability of SiC metal–oxide–semiconductor(MOS)capacitors.The SiC MOS capacitors are produced by O_(3)oxidation,...We investigate the effect of ozone(O_(3))oxidation of silicon carbide(SiC)on the flat-band voltage(Vfb)stability of SiC metal–oxide–semiconductor(MOS)capacitors.The SiC MOS capacitors are produced by O_(3)oxidation,and their Vfbstability under frequency variation,temperature variation,and bias temperature stress are evaluated.Secondary ion mass spectroscopy(SIMS),atomic force microscopy(AFM),and x-ray photoelectron spectroscopy(XPS)indicate that O_(3)oxidation can adjust the element distribution near SiC/SiO_(2)interface,improve SiC/SiO_(2)interface morphology,and inhibit the formation of near-interface defects,respectively.In addition,we elaborate the underlying mechanism through which O_(3)oxidation improves the Vfbstability of SiC MOS capacitors by using the measurement results and O_(3)oxidation kinetics.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61874017)。
文摘We investigate the effect of ozone(O_(3))oxidation of silicon carbide(SiC)on the flat-band voltage(Vfb)stability of SiC metal–oxide–semiconductor(MOS)capacitors.The SiC MOS capacitors are produced by O_(3)oxidation,and their Vfbstability under frequency variation,temperature variation,and bias temperature stress are evaluated.Secondary ion mass spectroscopy(SIMS),atomic force microscopy(AFM),and x-ray photoelectron spectroscopy(XPS)indicate that O_(3)oxidation can adjust the element distribution near SiC/SiO_(2)interface,improve SiC/SiO_(2)interface morphology,and inhibit the formation of near-interface defects,respectively.In addition,we elaborate the underlying mechanism through which O_(3)oxidation improves the Vfbstability of SiC MOS capacitors by using the measurement results and O_(3)oxidation kinetics.
