A silicon dioxide fiber-reinforced silicon nitride matrix （SiOJSi3N4） composite used for radomes was prepared by chemical vapor infiltration （CVI） process using the SiCl4-NH3-H2 system. The effects of the process ...A silicon dioxide fiber-reinforced silicon nitride matrix （SiOJSi3N4） composite used for radomes was prepared by chemical vapor infiltration （CVI） process using the SiCl4-NH3-H2 system. The effects of the process conditions, including infiltration temperature, infiltration time, and gas flux were investigated. The energy dispersion spectra （EDS） result showed that the main elements of this composite contained Si, N, and O. The X-ray diffraction （XRD） results indicated that phases of the composite before and after treatment at 1350℃ were all amorphous. A little fiber pull-out was observed on the cross section of the composite by scan electron microscope （SEM）. As a result, the composite exhibited good thermal stability, but an appropriate interface was necessary between the fiber and the matrix.展开更多
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships amon...Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.展开更多
Using low-cost precipitated silica(SiO2) as the carrier,a ternary SiO2-TiO2/g-C3N4 composite photocatalyst was prepared via the sol-gel method associated with a wet-grinding process.The asprepared composite exhibits p...Using low-cost precipitated silica(SiO2) as the carrier,a ternary SiO2-TiO2/g-C3N4 composite photocatalyst was prepared via the sol-gel method associated with a wet-grinding process.The asprepared composite exhibits photocatalytic hydrogen production and pollutant degradation performance under solar-like irradiation.The effect of SiO2 carrier on the properties of the heterostructure between TiO2 and g-C3N4(CN) was systematically studied.It is found that SiO2 has important effects on promoting the interaction between TiO2 and CN.The particle size of TiO2 and CN was obviously reduced during the calcination process due to the effects of SiO2.Especially,the TiO2 particles exhibit monodispersed state with particle size below 10 nm(quantum dots),resulting in the improvement of the contact area and the interaction betweenTiO2 and CN,and leading to the formation of efficient TiO2/CN Zscheme heterostructure in SiO2-TiO2/CN.Besides,the introduction of SiO2 can increase the specific surface area and light absorption of SiO2-TiO2/CN,further promoting the photocatalytic reaction.As expected,the optimum SiO2-TiO2/CN composite exhibits 12.3,3.1 and 2.9 times higher photocatalytic hydrogen production rate than that of SiO2-TiO2,CN and TiO2/CN under solar-like irradiation,while the photocatalytic active component in SiO2-TiO2/CN is only about 60 wt%.Moreover,the rhodamine B degradation rate of SiO2-TiO2/CN is also higher than that of SiO2-TiO2,CN and TiO2/CN.展开更多
基金This study was financially supported by the Key Foundation of National Science in China (No. 90405015), the National Elitist Youth Foundation of China (No. 50425208the Doctorate Foundation of Northwestern Polytechnical University (CX200505).
文摘A silicon dioxide fiber-reinforced silicon nitride matrix （SiOJSi3N4） composite used for radomes was prepared by chemical vapor infiltration （CVI） process using the SiCl4-NH3-H2 system. The effects of the process conditions, including infiltration temperature, infiltration time, and gas flux were investigated. The energy dispersion spectra （EDS） result showed that the main elements of this composite contained Si, N, and O. The X-ray diffraction （XRD） results indicated that phases of the composite before and after treatment at 1350℃ were all amorphous. A little fiber pull-out was observed on the cross section of the composite by scan electron microscope （SEM）. As a result, the composite exhibited good thermal stability, but an appropriate interface was necessary between the fiber and the matrix.
文摘Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.
基金partly supported by the National Natural Science Foundation of China(Nos.21577132,21978276)。
文摘Using low-cost precipitated silica(SiO2) as the carrier,a ternary SiO2-TiO2/g-C3N4 composite photocatalyst was prepared via the sol-gel method associated with a wet-grinding process.The asprepared composite exhibits photocatalytic hydrogen production and pollutant degradation performance under solar-like irradiation.The effect of SiO2 carrier on the properties of the heterostructure between TiO2 and g-C3N4(CN) was systematically studied.It is found that SiO2 has important effects on promoting the interaction between TiO2 and CN.The particle size of TiO2 and CN was obviously reduced during the calcination process due to the effects of SiO2.Especially,the TiO2 particles exhibit monodispersed state with particle size below 10 nm(quantum dots),resulting in the improvement of the contact area and the interaction betweenTiO2 and CN,and leading to the formation of efficient TiO2/CN Zscheme heterostructure in SiO2-TiO2/CN.Besides,the introduction of SiO2 can increase the specific surface area and light absorption of SiO2-TiO2/CN,further promoting the photocatalytic reaction.As expected,the optimum SiO2-TiO2/CN composite exhibits 12.3,3.1 and 2.9 times higher photocatalytic hydrogen production rate than that of SiO2-TiO2,CN and TiO2/CN under solar-like irradiation,while the photocatalytic active component in SiO2-TiO2/CN is only about 60 wt%.Moreover,the rhodamine B degradation rate of SiO2-TiO2/CN is also higher than that of SiO2-TiO2,CN and TiO2/CN.
