Micron-sized silicon anodes offer significant industrial advantages over nanoscale counterparts due to their cost-effectiveness and scalability.However,their practical applications are significantly hindered by severe...Micron-sized silicon anodes offer significant industrial advantages over nanoscale counterparts due to their cost-effectiveness and scalability.However,their practical applications are significantly hindered by severe stress-induced fragmentation,leading to rapid capacity decay.Addressing this challenge,we introduce a novel dual-conformal encapsulated micron-sized porous Si(μm-pSi)anode by utilizingμm-Si recycled from the photovoltaic industry as the Si precursor.This encapsulation design of the internal conformal SiO_(x)/C layer and external Ti_(3)C_(2)Tx MXene layer forms intergranular and intragranular protective skins onμm-pSi,ensuring simultaneous mechanical and electrochemical stability for efficient Li+storage.As a result,the fabricated WpSi@SiO_(x)/C@MXene anode demonstrates an exceptional cycling performance,delivering 535.1 mA h g^(−1)after 1500 cycles at 5 A g^(−1)with a minimal capacity decay of 0.003%per cycle.Chemo-mechanical modeling and SEI analysis reveal that the dual-conformal coating achieves exceptional mechanical and electrochemical stability through robust mechanical confinement and ultra-fast Li+diffusion kinetics during lithiation,coupled with a Li_(2)CO_(3)/LiF-rich hybrid SEI that facilitates Li+transport,collectively enabling rate-insensitive stress evolution,long-term structural durability,and stable cycling under high-rate conditions.This work provides a compelling design strategy for leveraging sustainableμm-Si to achieve high-rate and long-life lithium-ion batteries.展开更多
TiO2deposited at extremely low temperature of 120°C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmiss...TiO2deposited at extremely low temperature of 120°C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy indicate that the lower deposition temperature tends to effectively eliminate the formation of GeOxto reduce the tunneling resistance. Compared with TiO2deposited at higher temperature of 250°C,there are more oxygen vacancies in lower-temperature-deposited TiO2, which will dope TiO2contributing to the lower tunneling resistance. Al/TiO2/n-Ge metal-insulator-semiconductor diodes with 2 nm 120°C deposited TiO2achieves 2496 times of current density at-0.1 V compared with the device without the TiO2interface layer case, and is 8.85 times larger than that with 250°C deposited TiO2. Thus inserting extremely low temperature deposited TiO2to depin the Fermi level for n-Ge may be a better choice.展开更多
Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established the...Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established theoretical models under the K-point space of periodic boundary condition. The structures after optimization have been analyzed, and the results show that the interfaces present in disordered state and both Si-O-Si and Si=O structures exist. Meanwhile, the bonding of surface structure is analyzed via the graphics of electron localization function（ELF）.展开更多
In order to modify the interface, Si ON coating was introduced on the surface of silicon nitride fiber by perhydropolysilazane conversion method. Si-3N4f/SiO2 and Si-3N4f/Si ONc/SiO2 composites were prepared by sol-ge...In order to modify the interface, Si ON coating was introduced on the surface of silicon nitride fiber by perhydropolysilazane conversion method. Si-3N4f/SiO2 and Si-3N4f/Si ONc/SiO2 composites were prepared by sol-gel method to explore the influence of Si ON coating on the mechanical properties of composites.The results show that with the protection of Si ON coating, Si-3N4fiber enjoys a strength increase of up to 24.1% and Si-3N4f/Si ONc/SiO2 composites have a tensile strength of 170.5 MPa and a modulus of26.9 GPa, respectively. After 1000℃ annealing in air for 1 h, Si-3N4f/Si ONc/SiO2 composites retain 65.0%of their original strength and show a better toughness than Si-3N4f/SiO2 composites. The improvement of mechanical properties is attributing to the healing effect of Si ON coating as well as its intermediate coefficient of thermal expansion between Si-3N4fiber and SiO2 matrix.展开更多
The microstructure of primary Mg_(2)Si and the interface of Mg_(2)Si/α-Mg modified by Sn and Sb elements in an as-cast Mg-5Sn-2Si-1.5Al-1Zn-0.8Sb(wt.%) alloy were investigated.In the primary Mg_(2)Si phase not only t...The microstructure of primary Mg_(2)Si and the interface of Mg_(2)Si/α-Mg modified by Sn and Sb elements in an as-cast Mg-5Sn-2Si-1.5Al-1Zn-0.8Sb(wt.%) alloy were investigated.In the primary Mg_(2)Si phase not only the Si atoms but also the Mg atoms could be substituted by Sn and Sb atoms,resulting in the slightly reduced lattice constant a of 0.627 nm.An OR of Mg_(2)Si phase and α-Mg in the form of[001]Mg_(2)Si‖[01■1]α,(220)Mg_(2)Si‖(0■12)αwas discovered.Between primary Mg_(2)Si phase and α-Mg matrix two transitional nano-particle layers were formed.In the rim region of primary Mg_(2)Si particle,Mg_(2)Sn precipitates sizing from 5 nm to 50 nm were observed.Adjacent to the boundary of primary Mg_(2)Si particle,luxuriant columnar crystals of primary Mg_(2)Sn phase with width of about 25 nm and length of about100 nm were distributed on the α-Mg matrix.The lattice constant of the Mg_(2)Sn precipitate in primary Mg_(2)Si particle was about 0.756 nm.Three ORs between Mg_(2)Sn and Mg_(2)Si were found,in which the Mg_(2)Sn precipitates had strong bonding interfaces with Mg_(2)Si phase.Three new minor ORs between Mg_(2)Sn phase and α-Mg were found.The lattice constant of primary Mg_(2)Sn phase was enlarged to 0.813 nm owing to the solution of Sn and Sb atoms.Primary Mg_(2)Sn had edge-to-edge interfaces with α-Mg.Therefore,the primary Mg_(2)Si particle and α-Mg were united and the interfacial adhesion was improved by the two nano-particles layers of Mg_(2)Sn phase.展开更多
The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer ...The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL).The electrical properties (such as capacitance-voltage (C-V) and gate leakage current density versus gate voltage (J_(g)-V_(g))) were measured by HP4284A precision LCR meter and HP4156A semiconductor parameter analyzer.The chemical states and interfacial quality of the high-k/Ge interface were investigated by X-ray photoelectron spectroscopy (XPS).The experimental results show that the sample with the NdAlON as IPL exhibits the excellent interfacial and electrical properties.These should be attributed to an effective suppression of the Ge suboxide and HfGeOx interlayer,and an enhanced blocking role against inter-diffusion of the elements during annealing by the NdAlON IPL.展开更多
High silicon content Al-Si composites with a composition of Al-40 wt% Si were fabricated via a highenergy ball milling method. The microstructure evolution of Al-40 wt% Si milled powders and sintered composites has be...High silicon content Al-Si composites with a composition of Al-40 wt% Si were fabricated via a highenergy ball milling method. The microstructure evolution of Al-40 wt% Si milled powders and sintered composites has been thoroughly studied by scanning electron microscopy, X-ray diffraction, energydispersive spectrometry and high-resolution transmission electron microscopy. The mechanism of ball milling Al-40 wt% Si powders has been disclosed in detail: fracture mechanism dominating in the early stages, followed by the agglomeration mechanism, finally reaching the balance between the fragments and the agglomerates. It has been found that the average particle sizes of mixed Al-Si powders can be refined to the nanoscale, and the crystallite sizes of Al and Si have been reduced to 10nm and 62nm upon milling for 2h–50h, respectively. The finally formed Al-Si interfaces after ball milling for 50h are wellcohesive. A dense and homogenous Al-40 wt% Si composite have been achieved by solid-state sintering at550?C. The results thus provide an effective support for producing bulk nanostructured Al-Si composites.展开更多
This paper presents a two-agent framework to build a natural langua g e query interface for IC information system, focusing more on scope queries in a single English sentence. The first agent, parsing agent, syntact...This paper presents a two-agent framework to build a natural langua g e query interface for IC information system, focusing more on scope queries in a single English sentence. The first agent, parsing agent, syntactically p rocesses and semantically interprets natural language sentence to construct a fu zzy structured query language (SQL) statement. The second agent, defuzzif ying agent, defuzzifies the imprecise part of the fuzzy SQL statement into its e quivalent executable precise SQL statement based on fuzzy rules. The first agent can also actively ask the user some necessary questions when it manages to disa mbiguate the vague retrieval requirements. The adaptive defuzzification approach employed in the defuzzifying agent is discussed in detail. A prototype interface has been implemented to demonstrate the effectiveness.展开更多
Lithium metal batteries represent promising candidates for high-energy-density batteries, however, many challenges must still be overcome,e.g., interface instability and dendrite growth. In this work, nano silica aero...Lithium metal batteries represent promising candidates for high-energy-density batteries, however, many challenges must still be overcome,e.g., interface instability and dendrite growth. In this work, nano silica aerogel was employed to generate a hybrid film with high lithium ion conductivity(0.6 mS cm^(-1)at room temperature) via an in situ crosslinking reaction. TOF-SIMS profile analysis has revealed conversion mechanism of hybrid film to Li–Si alloy/Li F biphasic interface layer, suggesting that the Li–Si alloy and Li F-rich interface layer promoted rapid Li+transport and shielded the Li anodes from corrosive reactions with electrolyte-derived products. When coupled with nickel-cobalt-manganese-based cathodes, the batteries achieve outstanding capacity retention over 1000 cycles at 1 C. Additionally the developed film coated on Li enabled high coulombic efficiency(99.5%) after long-term cycling when coupled with S cathodes. Overall, the results presented herein confirm an effective strategy for the development of high-energy batteries.展开更多
The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporou...The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of inter- facial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.展开更多
A series of Al-xSi-yGe filler metals(x=4–12 and y=10–40,wt%)were prepared,and the effect of Si and Ge on microstructure and melting characteristics of filler metals was studied.The thermodynamic model of Al-Si-Ge te...A series of Al-xSi-yGe filler metals(x=4–12 and y=10–40,wt%)were prepared,and the effect of Si and Ge on microstructure and melting characteristics of filler metals was studied.The thermodynamic model of Al-Si-Ge ternary alloy was established to analyze the phase formation mechanism of filler metals based on Miedema model,Tanaka model,and Toop equation.This research provided a basis for the composition optimization of filler metals and the analysis of metallurgical reaction process between filler metals and base materials.Results show that Al-Si-Ge alloy is composed of Al-Ge eutectic phase,Al-Si eutectic phase,and primary Si.Ge addition promotes the precipitation of primary Si.Ge is the main melting point depressant element of filler metals.With the increase in Ge content from 10wt%to 40wt%,the solid phase line of filler metals remains unchanged,whereas the liquidus temperature decreases from 567.65°C to 499.96°C.With the increase in Ge content of filler metal,Ge content in eutectic Si phase is increased,the endothermic peak of Al-Si eutectic reaction according to thermogravimetry curve becomes smoother,and Al-Si eutectic temperature is decreased.Ge addition can reduce the free energy of Al-Si alloy system.The lowest point of free energy is located on Al-Ge side.The eutectic Ge phase with the composition similar to pure Ge composition is the most likely to appear in the microstructure of filler metals,whereas the eutectic Si phase with the composition similar to pure Si composition is the least likely to appear.The thermodynamic calculation results are consistent with the experiment results.展开更多
Efficient thermal management is critical to the reliability and performance of nanoscale electronic and photonic devices,particularly those incorporating multilayer structures.In this study,non-equilibrium molecular d...Efficient thermal management is critical to the reliability and performance of nanoscale electronic and photonic devices,particularly those incorporating multilayer structures.In this study,non-equilibrium molecular dynamics simulations were conducted to systematically investigate the effects of temperature,penetration depth,and Si layer thickness on the interfacial thermal resistance(ITR)in nanometer-scale Mo/Si multilayers,widely employed in extreme ultraviolet lithography.The results indicate that:(i)temperature variations exert a negligible influence on the ITR of amorphous Mo/Si interfaces,which remains stable across the range of 200-900 K;(ii)increasing penetration depth enhances the overlap of phonon density of states,thereby significantly reducing ITR;(iii)the ITR decreases with increasing Si thickness up to4.2 nm due to quasi-ballistic phonon transport,but rises again as phonon scattering becomes more pronounced at larger thicknesses.This study provides quantitative insights into heat transfer mechanisms at amorphous interfaces and also offers a feasible strategy for tailoring interfacial thermal transport through structural design.展开更多
The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects.The depassivation of these defects suggests that the deep levels associated with the defects are reactivated,aff...The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects.The depassivation of these defects suggests that the deep levels associated with the defects are reactivated,affecting the performance of devices.This work simulates the depassivation reactions between holes and passivated amorphous-SiO_(2)/Si interface defects(HP_(b)+h→P_(b)+H^(+)).The climbing image nudged elastic band method is used to calculate the reaction curves and the barriers.In addition,the atomic charges of the initial and final structures are analyzed by the Bader charge method.It is shown that more than one hole is trapped by the defects,which is implied by the reduction in the total number of valence electrons on the active atoms.The results indicate that the depassivation of the defects by the holes actually occurs in three steps.In the first step,a hole is captured by the passivated defect,resulting in the stretching of the Si-H bond.In the second step,the defect captures one more hole,which may contribute to the breaking of the Si-H bond.The H atom is released as a proton and the Si atom is three-coordinated and positively charged.In the third step,an electron is captured by the Si atom,and the Si atom becomes neutral.In this step,a Pb-type defect is reactivated.展开更多
It is well known that in the process of thermal oxidation of silicon,there are P_(b)-type defects at amorphous silicon dioxide/silicon(a-SiO_(2)/Si)interface due to strain.These defects have a very important impact on...It is well known that in the process of thermal oxidation of silicon,there are P_(b)-type defects at amorphous silicon dioxide/silicon(a-SiO_(2)/Si)interface due to strain.These defects have a very important impact on the performance and reliability of semiconductor devices.In the process of passivation,hydrogen is usually used to inactivate P_(b)-type defects by the reaction P_(b)+H_(2)→P_(b)H+H.At the same time,P_(b)H centers dissociate according to the chemical reaction P_(b)H→P_(b)+H.Therefore,it is of great significance to study the balance of the passivation and dissociation.In this work,the reaction mechanisms of passivation and dissociation of the P_(b)-type defects are investigated by first-principles calculations.The reaction rates of the passivation and dissociation are calculated by the climbing image-nudged elastic band(CI-NEB)method and harmonic transition state theory(HTST).By coupling the rate equations of the passivation and dissociation reactions,the equilibrium density ratio of the saturated interfacial dangling bonds and interfacial defects(P_(b),P_(b)0,and P_(b)1)at different temperatures is calculated.展开更多
By using newly developed CuNi5~25Ti16~28 B rapldly solidifled brazing filler the joining of Si3 N4/1.25Cr-0.5Mo steel has been carried out with interlayer method. If employing the interlayer structure of steel (0.2 mm...By using newly developed CuNi5~25Ti16~28 B rapldly solidifled brazing filler the joining of Si3 N4/1.25Cr-0.5Mo steel has been carried out with interlayer method. If employing the interlayer structure of steel (0.2 mm)/W (2.0 mm)/Ni(0.2 mm), the joint strength can be increased greatly compared with employing that of Ni/W/Ni, and the three point bend strength of the Joint shows the value of 261 MPa. The metallurgical behaviour at the interface between Si3N4 and the interlayer has been studied. It is found that Fe participated in the interfacial reactions between Si3N4 and the brazing filler at the Si3N4/steel (0.2 mm) interface and the compound Fe5Si3 was produced. However, since the reactions of Fe with the active Ti are weaker than those of Ni with Ti, the normal inter facial reactions were still assured at the interface of Si3N4/steel (0.2 mm) instead of Si3N4/Ni (0.2 mm), resulting in the improvement of the joint strength. The mechanism of the formation of Fe5Si3 is also discussed. Finally, some ideas to further ameliorate and simplify the interlayer structure are put forward.展开更多
The microstructure,elemental distribution,phase composition,and thickness of intermetallic layers between high-strength low-alloy steel(H420)/mild carbon steel(DC51)and Al–43.4Zn–1.6Si(wt.%)(galvalume,GL)alloy were ...The microstructure,elemental distribution,phase composition,and thickness of intermetallic layers between high-strength low-alloy steel(H420)/mild carbon steel(DC51)and Al–43.4Zn–1.6Si(wt.%)(galvalume,GL)alloy were comparatively investigated.The experimental results reveal that the interfacial reaction layer was composed of Fe2Al5,Fe4Al13,and Al8Fe2Si intermetallic compounds.Moreover,the growth curves of the Fe2Al5 and Fe4Al13 intermetallic layers fit the parabolic law well,and the total thickness of the intermetallic layers of H420+GL was almost the same as that of DC51+GL.However,the thickness of the Fe2Al5 layer in H420+GL was thinner than that in DC51+GL.In addition,first-principle calculations were performed to explore the effect of Mn on the growth of the Fe2Al5 intermetallic phase,and the results indicate that Mn substitution in Fe2Al5 removes electronic charge from the Al atoms,thus decreasing the thickness of the Fe2Al5 interface layer.展开更多
On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2...On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved.It is found that the post oxidation annealing at lower temperatures is helpful to passivate the interface defects at the Ge/GeO2 stack generated by the conventional thermal oxidation,while the high-quality GeO2 bulk properties can only be achieved by HPO that grows GeO2 film at high temperatures without the GeO desorption.This paper reviews the advantage of HPO on the formation of Ge/GeO2 stacks in terms of Ge/GeO2 interface and GeO2 bulk properties.展开更多
Interaction behaviors between Al-Si, Zn-Al alloys and Al2O)3p)/6061Al composite at different heating temperatures were investigated. It is found that Al2O)3p)/6061Al composite can be wetted well by AlSi-1, AlSi-4 and ...Interaction behaviors between Al-Si, Zn-Al alloys and Al2O)3p)/6061Al composite at different heating temperatures were investigated. It is found that Al2O)3p)/6061Al composite can be wetted well by AlSi-1, AlSi-4 and Zn-Al alloys and an interaction layer forms between the alloy and composite during interaction. Little Al-Si alloys remain on the surface when they fully wet the composite and Si element in Al-Si alloy diffuses into composite entirely and assembles in the composite near the interface of Al-Si alloy/composite to form a Si-rich zone. The microstructure in interaction layer with Si penetration is still dense. Much more residual Zn-Al alloy exists on the surface of composite when it wets the composite, and porosities appear at the interface of Zn-Al alloy/composite. The penetration of elements Zn, Cu of Zn-Al alloy into composite leads to the generation of shrinkage cavities in the interaction layer and makes the microstructure of Al2O)3p)/6061Al composite loose.展开更多
基金the financial support from the Natural Science Foundation of Shanghai(23ZR1423800)Open Research Fund of Shanghai Key Laboratory of Green Chemistry and Chemical Processes(East China Normal University,202503)+1 种基金State Key Laboratory of Advanced Fiber Materials(Donghua University,KF2406)Key Laboratory of Advanced Energy Materials Chemistry(Ministry of Education),Nankai University。
文摘Micron-sized silicon anodes offer significant industrial advantages over nanoscale counterparts due to their cost-effectiveness and scalability.However,their practical applications are significantly hindered by severe stress-induced fragmentation,leading to rapid capacity decay.Addressing this challenge,we introduce a novel dual-conformal encapsulated micron-sized porous Si(μm-pSi)anode by utilizingμm-Si recycled from the photovoltaic industry as the Si precursor.This encapsulation design of the internal conformal SiO_(x)/C layer and external Ti_(3)C_(2)Tx MXene layer forms intergranular and intragranular protective skins onμm-pSi,ensuring simultaneous mechanical and electrochemical stability for efficient Li+storage.As a result,the fabricated WpSi@SiO_(x)/C@MXene anode demonstrates an exceptional cycling performance,delivering 535.1 mA h g^(−1)after 1500 cycles at 5 A g^(−1)with a minimal capacity decay of 0.003%per cycle.Chemo-mechanical modeling and SEI analysis reveal that the dual-conformal coating achieves exceptional mechanical and electrochemical stability through robust mechanical confinement and ultra-fast Li+diffusion kinetics during lithiation,coupled with a Li_(2)CO_(3)/LiF-rich hybrid SEI that facilitates Li+transport,collectively enabling rate-insensitive stress evolution,long-term structural durability,and stable cycling under high-rate conditions.This work provides a compelling design strategy for leveraging sustainableμm-Si to achieve high-rate and long-life lithium-ion batteries.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61534004,61604112 and 61622405
文摘TiO2deposited at extremely low temperature of 120°C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy indicate that the lower deposition temperature tends to effectively eliminate the formation of GeOxto reduce the tunneling resistance. Compared with TiO2deposited at higher temperature of 250°C,there are more oxygen vacancies in lower-temperature-deposited TiO2, which will dope TiO2contributing to the lower tunneling resistance. Al/TiO2/n-Ge metal-insulator-semiconductor diodes with 2 nm 120°C deposited TiO2achieves 2496 times of current density at-0.1 V compared with the device without the TiO2interface layer case, and is 8.85 times larger than that with 250°C deposited TiO2. Thus inserting extremely low temperature deposited TiO2to depin the Fermi level for n-Ge may be a better choice.
基金Supported by the National Grand Fundamental Research 973 Program of China (No. 51310Z07-3) and the Research Program of Application of Sichuan Department of Science and Technology (No. 02GY029-006)
文摘Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established theoretical models under the K-point space of periodic boundary condition. The structures after optimization have been analyzed, and the results show that the interfaces present in disordered state and both Si-O-Si and Si=O structures exist. Meanwhile, the bonding of surface structure is analyzed via the graphics of electron localization function（ELF）.
基金the financial support from the National Natural Science Foundation of China (Grant No. 51702361)the Natural Science Foundation of Hunan Province (Grant No. 2017JJ3353)
文摘In order to modify the interface, Si ON coating was introduced on the surface of silicon nitride fiber by perhydropolysilazane conversion method. Si-3N4f/SiO2 and Si-3N4f/Si ONc/SiO2 composites were prepared by sol-gel method to explore the influence of Si ON coating on the mechanical properties of composites.The results show that with the protection of Si ON coating, Si-3N4fiber enjoys a strength increase of up to 24.1% and Si-3N4f/Si ONc/SiO2 composites have a tensile strength of 170.5 MPa and a modulus of26.9 GPa, respectively. After 1000℃ annealing in air for 1 h, Si-3N4f/Si ONc/SiO2 composites retain 65.0%of their original strength and show a better toughness than Si-3N4f/SiO2 composites. The improvement of mechanical properties is attributing to the healing effect of Si ON coating as well as its intermediate coefficient of thermal expansion between Si-3N4fiber and SiO2 matrix.
基金supported by the National Natural Science Foundation of China [51571086]Research Fund for Doctoral Program of Henan Polytechnic University [B2015-14]。
文摘The microstructure of primary Mg_(2)Si and the interface of Mg_(2)Si/α-Mg modified by Sn and Sb elements in an as-cast Mg-5Sn-2Si-1.5Al-1Zn-0.8Sb(wt.%) alloy were investigated.In the primary Mg_(2)Si phase not only the Si atoms but also the Mg atoms could be substituted by Sn and Sb atoms,resulting in the slightly reduced lattice constant a of 0.627 nm.An OR of Mg_(2)Si phase and α-Mg in the form of[001]Mg_(2)Si‖[01■1]α,(220)Mg_(2)Si‖(0■12)αwas discovered.Between primary Mg_(2)Si phase and α-Mg matrix two transitional nano-particle layers were formed.In the rim region of primary Mg_(2)Si particle,Mg_(2)Sn precipitates sizing from 5 nm to 50 nm were observed.Adjacent to the boundary of primary Mg_(2)Si particle,luxuriant columnar crystals of primary Mg_(2)Sn phase with width of about 25 nm and length of about100 nm were distributed on the α-Mg matrix.The lattice constant of the Mg_(2)Sn precipitate in primary Mg_(2)Si particle was about 0.756 nm.Three ORs between Mg_(2)Sn and Mg_(2)Si were found,in which the Mg_(2)Sn precipitates had strong bonding interfaces with Mg_(2)Si phase.Three new minor ORs between Mg_(2)Sn phase and α-Mg were found.The lattice constant of primary Mg_(2)Sn phase was enlarged to 0.813 nm owing to the solution of Sn and Sb atoms.Primary Mg_(2)Sn had edge-to-edge interfaces with α-Mg.Therefore,the primary Mg_(2)Si particle and α-Mg were united and the interfacial adhesion was improved by the two nano-particles layers of Mg_(2)Sn phase.
基金Funded by the National Natural Science Foundation of China (No. 61704113)the Higher Vocational Brand Mayer in Guangdong Province (No.610103)the Educational Science Planning Project of Guangdong Province (Higher Education Special)。
文摘The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL).The electrical properties (such as capacitance-voltage (C-V) and gate leakage current density versus gate voltage (J_(g)-V_(g))) were measured by HP4284A precision LCR meter and HP4156A semiconductor parameter analyzer.The chemical states and interfacial quality of the high-k/Ge interface were investigated by X-ray photoelectron spectroscopy (XPS).The experimental results show that the sample with the NdAlON as IPL exhibits the excellent interfacial and electrical properties.These should be attributed to an effective suppression of the Ge suboxide and HfGeOx interlayer,and an enhanced blocking role against inter-diffusion of the elements during annealing by the NdAlON IPL.
基金financially supported by the National Natural Science Foundation of China (No.51571148)the National Key Research and Development Program of China (No.2017YFE0302600 and No.2017YFB0701801)the Thousand Talents Program for Distinguished Young Scholars of China
文摘High silicon content Al-Si composites with a composition of Al-40 wt% Si were fabricated via a highenergy ball milling method. The microstructure evolution of Al-40 wt% Si milled powders and sintered composites has been thoroughly studied by scanning electron microscopy, X-ray diffraction, energydispersive spectrometry and high-resolution transmission electron microscopy. The mechanism of ball milling Al-40 wt% Si powders has been disclosed in detail: fracture mechanism dominating in the early stages, followed by the agglomeration mechanism, finally reaching the balance between the fragments and the agglomerates. It has been found that the average particle sizes of mixed Al-Si powders can be refined to the nanoscale, and the crystallite sizes of Al and Si have been reduced to 10nm and 62nm upon milling for 2h–50h, respectively. The finally formed Al-Si interfaces after ball milling for 50h are wellcohesive. A dense and homogenous Al-40 wt% Si composite have been achieved by solid-state sintering at550?C. The results thus provide an effective support for producing bulk nanostructured Al-Si composites.
文摘This paper presents a two-agent framework to build a natural langua g e query interface for IC information system, focusing more on scope queries in a single English sentence. The first agent, parsing agent, syntactically p rocesses and semantically interprets natural language sentence to construct a fu zzy structured query language (SQL) statement. The second agent, defuzzif ying agent, defuzzifies the imprecise part of the fuzzy SQL statement into its e quivalent executable precise SQL statement based on fuzzy rules. The first agent can also actively ask the user some necessary questions when it manages to disa mbiguate the vague retrieval requirements. The adaptive defuzzification approach employed in the defuzzifying agent is discussed in detail. A prototype interface has been implemented to demonstrate the effectiveness.
基金the support from National Natural Science Foundation of China (22179006)International Science & Technology Cooperation Program of China under Contract No.2019YFE0100200+3 种基金National Natural Science Foundation of China (52072036)NSAF (No.U1930113)Guangdong Key Laboratory of Battery Safety,China (No.2019B121203008)China Postdoctoral Science Foundation (No.2021TQ0034)。
文摘Lithium metal batteries represent promising candidates for high-energy-density batteries, however, many challenges must still be overcome,e.g., interface instability and dendrite growth. In this work, nano silica aerogel was employed to generate a hybrid film with high lithium ion conductivity(0.6 mS cm^(-1)at room temperature) via an in situ crosslinking reaction. TOF-SIMS profile analysis has revealed conversion mechanism of hybrid film to Li–Si alloy/Li F biphasic interface layer, suggesting that the Li–Si alloy and Li F-rich interface layer promoted rapid Li+transport and shielded the Li anodes from corrosive reactions with electrolyte-derived products. When coupled with nickel-cobalt-manganese-based cathodes, the batteries achieve outstanding capacity retention over 1000 cycles at 1 C. Additionally the developed film coated on Li enabled high coulombic efficiency(99.5%) after long-term cycling when coupled with S cathodes. Overall, the results presented herein confirm an effective strategy for the development of high-energy batteries.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176044 and 11074224)the Science and Technology Project for Innovative Scientist of Henan Province,China(Grant No.1142002510017)the Science and Technology Project on Key Problems of Henan Province,China(Grant No.082101510007)
文摘The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of inter- facial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.
基金National Natural Science Foundation of China(U22A20191)。
文摘A series of Al-xSi-yGe filler metals(x=4–12 and y=10–40,wt%)were prepared,and the effect of Si and Ge on microstructure and melting characteristics of filler metals was studied.The thermodynamic model of Al-Si-Ge ternary alloy was established to analyze the phase formation mechanism of filler metals based on Miedema model,Tanaka model,and Toop equation.This research provided a basis for the composition optimization of filler metals and the analysis of metallurgical reaction process between filler metals and base materials.Results show that Al-Si-Ge alloy is composed of Al-Ge eutectic phase,Al-Si eutectic phase,and primary Si.Ge addition promotes the precipitation of primary Si.Ge is the main melting point depressant element of filler metals.With the increase in Ge content from 10wt%to 40wt%,the solid phase line of filler metals remains unchanged,whereas the liquidus temperature decreases from 567.65°C to 499.96°C.With the increase in Ge content of filler metal,Ge content in eutectic Si phase is increased,the endothermic peak of Al-Si eutectic reaction according to thermogravimetry curve becomes smoother,and Al-Si eutectic temperature is decreased.Ge addition can reduce the free energy of Al-Si alloy system.The lowest point of free energy is located on Al-Ge side.The eutectic Ge phase with the composition similar to pure Ge composition is the most likely to appear in the microstructure of filler metals,whereas the eutectic Si phase with the composition similar to pure Si composition is the least likely to appear.The thermodynamic calculation results are consistent with the experiment results.
基金supported by the National Natural Science Foundation of China(Grant No.52206092)the National Key R&D Program of China(Grant No.2024YFF0508900)+1 种基金the Big Data Computing Center of Southeast Universitythe Center for Fundamental and Interdisciplinary Sciences of Southeast University。
文摘Efficient thermal management is critical to the reliability and performance of nanoscale electronic and photonic devices,particularly those incorporating multilayer structures.In this study,non-equilibrium molecular dynamics simulations were conducted to systematically investigate the effects of temperature,penetration depth,and Si layer thickness on the interfacial thermal resistance(ITR)in nanometer-scale Mo/Si multilayers,widely employed in extreme ultraviolet lithography.The results indicate that:(i)temperature variations exert a negligible influence on the ITR of amorphous Mo/Si interfaces,which remains stable across the range of 200-900 K;(ii)increasing penetration depth enhances the overlap of phonon density of states,thereby significantly reducing ITR;(iii)the ITR decreases with increasing Si thickness up to4.2 nm due to quasi-ballistic phonon transport,but rises again as phonon scattering becomes more pronounced at larger thicknesses.This study provides quantitative insights into heat transfer mechanisms at amorphous interfaces and also offers a feasible strategy for tailoring interfacial thermal transport through structural design.
基金Project supported by the Science Challenge Project(Grant No.TZ2016003-1-105)Tianjin Natural Science Foundation,China(Grant No.20JCZDJC00750)the Fundamental Research Funds for the Central Universities—Nankai University(Grant Nos.63211107 and 63201182)。
文摘The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects.The depassivation of these defects suggests that the deep levels associated with the defects are reactivated,affecting the performance of devices.This work simulates the depassivation reactions between holes and passivated amorphous-SiO_(2)/Si interface defects(HP_(b)+h→P_(b)+H^(+)).The climbing image nudged elastic band method is used to calculate the reaction curves and the barriers.In addition,the atomic charges of the initial and final structures are analyzed by the Bader charge method.It is shown that more than one hole is trapped by the defects,which is implied by the reduction in the total number of valence electrons on the active atoms.The results indicate that the depassivation of the defects by the holes actually occurs in three steps.In the first step,a hole is captured by the passivated defect,resulting in the stretching of the Si-H bond.In the second step,the defect captures one more hole,which may contribute to the breaking of the Si-H bond.The H atom is released as a proton and the Si atom is three-coordinated and positively charged.In the third step,an electron is captured by the Si atom,and the Si atom becomes neutral.In this step,a Pb-type defect is reactivated.
基金Project supported by the Science Challenge Project,China(Grant No.TZ2016003-1-105)the Tianjin Natural Science Foundation,China(Grant No.20JCZDJC00750)the Fundamental Research Funds for the Central Universities,Nankai University(Grant Nos.63211107 and 63201182).
文摘It is well known that in the process of thermal oxidation of silicon,there are P_(b)-type defects at amorphous silicon dioxide/silicon(a-SiO_(2)/Si)interface due to strain.These defects have a very important impact on the performance and reliability of semiconductor devices.In the process of passivation,hydrogen is usually used to inactivate P_(b)-type defects by the reaction P_(b)+H_(2)→P_(b)H+H.At the same time,P_(b)H centers dissociate according to the chemical reaction P_(b)H→P_(b)+H.Therefore,it is of great significance to study the balance of the passivation and dissociation.In this work,the reaction mechanisms of passivation and dissociation of the P_(b)-type defects are investigated by first-principles calculations.The reaction rates of the passivation and dissociation are calculated by the climbing image-nudged elastic band(CI-NEB)method and harmonic transition state theory(HTST).By coupling the rate equations of the passivation and dissociation reactions,the equilibrium density ratio of the saturated interfacial dangling bonds and interfacial defects(P_(b),P_(b)0,and P_(b)1)at different temperatures is calculated.
文摘By using newly developed CuNi5~25Ti16~28 B rapldly solidifled brazing filler the joining of Si3 N4/1.25Cr-0.5Mo steel has been carried out with interlayer method. If employing the interlayer structure of steel (0.2 mm)/W (2.0 mm)/Ni(0.2 mm), the joint strength can be increased greatly compared with employing that of Ni/W/Ni, and the three point bend strength of the Joint shows the value of 261 MPa. The metallurgical behaviour at the interface between Si3N4 and the interlayer has been studied. It is found that Fe participated in the interfacial reactions between Si3N4 and the brazing filler at the Si3N4/steel (0.2 mm) interface and the compound Fe5Si3 was produced. However, since the reactions of Fe with the active Ti are weaker than those of Ni with Ti, the normal inter facial reactions were still assured at the interface of Si3N4/steel (0.2 mm) instead of Si3N4/Ni (0.2 mm), resulting in the improvement of the joint strength. The mechanism of the formation of Fe5Si3 is also discussed. Finally, some ideas to further ameliorate and simplify the interlayer structure are put forward.
基金the support from Science and Technology Committee of Shanghai(Grant No.16ZR1412000)National Natural Science Foundation of China(Grant Nos.51674163 and 51104098)Guiyang Science and Technology Project(Grant No.20161001).
文摘The microstructure,elemental distribution,phase composition,and thickness of intermetallic layers between high-strength low-alloy steel(H420)/mild carbon steel(DC51)and Al–43.4Zn–1.6Si(wt.%)(galvalume,GL)alloy were comparatively investigated.The experimental results reveal that the interfacial reaction layer was composed of Fe2Al5,Fe4Al13,and Al8Fe2Si intermetallic compounds.Moreover,the growth curves of the Fe2Al5 and Fe4Al13 intermetallic layers fit the parabolic law well,and the total thickness of the intermetallic layers of H420+GL was almost the same as that of DC51+GL.However,the thickness of the Fe2Al5 layer in H420+GL was thinner than that in DC51+GL.In addition,first-principle calculations were performed to explore the effect of Mn on the growth of the Fe2Al5 intermetallic phase,and the results indicate that Mn substitution in Fe2Al5 removes electronic charge from the Al atoms,thus decreasing the thickness of the Fe2Al5 interface layer.
基金The author would like to thank Prof.Akira Toriumi,Prof.Kita Koji,Prof.Kosuke Nagashio,and Dr.Tomonori Nishimura at the University of Tokyo for their continuous support and encouragement,which induced the main results reviewed in this paper.
文摘On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved.It is found that the post oxidation annealing at lower temperatures is helpful to passivate the interface defects at the Ge/GeO2 stack generated by the conventional thermal oxidation,while the high-quality GeO2 bulk properties can only be achieved by HPO that grows GeO2 film at high temperatures without the GeO desorption.This paper reviews the advantage of HPO on the formation of Ge/GeO2 stacks in terms of Ge/GeO2 interface and GeO2 bulk properties.
文摘Interaction behaviors between Al-Si, Zn-Al alloys and Al2O)3p)/6061Al composite at different heating temperatures were investigated. It is found that Al2O)3p)/6061Al composite can be wetted well by AlSi-1, AlSi-4 and Zn-Al alloys and an interaction layer forms between the alloy and composite during interaction. Little Al-Si alloys remain on the surface when they fully wet the composite and Si element in Al-Si alloy diffuses into composite entirely and assembles in the composite near the interface of Al-Si alloy/composite to form a Si-rich zone. The microstructure in interaction layer with Si penetration is still dense. Much more residual Zn-Al alloy exists on the surface of composite when it wets the composite, and porosities appear at the interface of Zn-Al alloy/composite. The penetration of elements Zn, Cu of Zn-Al alloy into composite leads to the generation of shrinkage cavities in the interaction layer and makes the microstructure of Al2O)3p)/6061Al composite loose.
