In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor...In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.展开更多
Terahertz(THz)detectors using MEMS resonators have attracted great interests owing to their high sensitivity,rapid response,and room-temperature operation capability.For easy integration with CMOS circuits,silicon(Si)...Terahertz(THz)detectors using MEMS resonators have attracted great interests owing to their high sensitivity,rapid response,and room-temperature operation capability.For easy integration with CMOS circuits,silicon(Si)based MEMS detectors are highly desirable.Here we report an uncooled THz bolometer using doubly-clamped Si on insulator(SOI)MEMS beam resonator with piezoresistive readout.When external heat is applied to the MEMS beam,the resonance frequency shifts owing to the thermal strain in the beam,demonstrating a thermal responsivity up to 149W^(−1).SOI MEMS resonators exhibit a thermal response time of about 88μs,which is over 3 times faster than that of GaAs MEMS detectors.Furthermore,electrical readout of the MEMS vibrations is achieved by using the piezoresistive effect of Si,offering a low frequency noise density of 2.7 mHz/√Hz,and subsequently a noise equivalent power(NEP)of about 36 pW/√Hz for the current devices.Optical measurement using a FTIR spectrometer shows that SOI MEMS bolometers has a broadband THz response across 1-10 THz range.These results demonstrate that SOI MEMS bolometer features fast response and high sensitivity,while also being compact,broadband,and CMOS-compatible,highlighting its strong potential for advanced THz spectroscopy and imaging applications.展开更多
In order to realize accurate bilinear transformation from s- to z-domain,a novelswitched-capacitor configuration is proposed in the light of principles of dual-rate sampling and chargeconservation,which has also been ...In order to realize accurate bilinear transformation from s- to z-domain,a novelswitched-capacitor configuration is proposed in the light of principles of dual-rate sampling and chargeconservation,which has also been used for building a 5th-order elliptic lowpass filter.The filter issimulated and measured in typical 0.34 μm/3.3 V Si CMOS process models,special full differentialoperational amplifiers and CMOS transfer gate switches,which achieves 80 MHz sampling rate,17.8MHz cutoff frequency,0.052 dB maximum passband ripple,42.1 dB minimum stopband attenuation and74 mW quiescent power dissipation.At the same time,the dual-rate sampling topology breaks thetraditional restrictions of filter introduced by unit-gain bandwidth and slew rate of operational amplifiersand also improves effectively their performances in high-frequency applications.It has been applied forthe design of an anti-alias filter in analog front-end of video decoder IC with 15 MHz signal frequencyyet.展开更多
文摘In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.
基金supported by the A-STEP program of JST,and KAKENHI from JSPS(21K04151,24K00937)。
文摘Terahertz(THz)detectors using MEMS resonators have attracted great interests owing to their high sensitivity,rapid response,and room-temperature operation capability.For easy integration with CMOS circuits,silicon(Si)based MEMS detectors are highly desirable.Here we report an uncooled THz bolometer using doubly-clamped Si on insulator(SOI)MEMS beam resonator with piezoresistive readout.When external heat is applied to the MEMS beam,the resonance frequency shifts owing to the thermal strain in the beam,demonstrating a thermal responsivity up to 149W^(−1).SOI MEMS resonators exhibit a thermal response time of about 88μs,which is over 3 times faster than that of GaAs MEMS detectors.Furthermore,electrical readout of the MEMS vibrations is achieved by using the piezoresistive effect of Si,offering a low frequency noise density of 2.7 mHz/√Hz,and subsequently a noise equivalent power(NEP)of about 36 pW/√Hz for the current devices.Optical measurement using a FTIR spectrometer shows that SOI MEMS bolometers has a broadband THz response across 1-10 THz range.These results demonstrate that SOI MEMS bolometer features fast response and high sensitivity,while also being compact,broadband,and CMOS-compatible,highlighting its strong potential for advanced THz spectroscopy and imaging applications.
基金Supported by the National Nature Science Foundation(No. 60072004)and the University Postgraduate Station Foundation of China(No.2000061402)
文摘In order to realize accurate bilinear transformation from s- to z-domain,a novelswitched-capacitor configuration is proposed in the light of principles of dual-rate sampling and chargeconservation,which has also been used for building a 5th-order elliptic lowpass filter.The filter issimulated and measured in typical 0.34 μm/3.3 V Si CMOS process models,special full differentialoperational amplifiers and CMOS transfer gate switches,which achieves 80 MHz sampling rate,17.8MHz cutoff frequency,0.052 dB maximum passband ripple,42.1 dB minimum stopband attenuation and74 mW quiescent power dissipation.At the same time,the dual-rate sampling topology breaks thetraditional restrictions of filter introduced by unit-gain bandwidth and slew rate of operational amplifiersand also improves effectively their performances in high-frequency applications.It has been applied forthe design of an anti-alias filter in analog front-end of video decoder IC with 15 MHz signal frequencyyet.
