Reconfigurable surface acoustic wave(SAW)phase shifters have garnered significant attention owing to their potential applications in emerging fields such as secure wireless communication,adaptable signal processing,an...Reconfigurable surface acoustic wave(SAW)phase shifters have garnered significant attention owing to their potential applications in emerging fields such as secure wireless communication,adaptable signal processing,and intelligent sensing systems.Among various modulation methods,employing gate voltage-controlled tuning methodologies that leverage acoustoelectric interactions has proven to be an efficient modulation approach that requires a low bias voltage.However,current acoustoelectric devices suffer from limited tunability,intricate heterogeneous structures,and complex manufacturing processes,all of which impede their practical applications.In this study,we present a novel material system for voltage-tunable SAW phase shifters.This system incorporates an atomic layer deposition ZnO thin-film transistors on LiNbO_(3)structure.This structure combines the benefits of LiNbO_(3)'s high electromechanical coupling coefficient(K^(2))and ZnO's superior conductivity adjustability.Besides,the device possesses a simplified structural configuration,which is easy to fabricate.Devices with different mesa lengths were fabricated and measured,and two of the different modes were compared.The results indicate that both the maximum phase shift and attenuation of the Rayleigh mode and longitudinal leaky SAW(LLSAW)increase proportionally with mesa length.Furthermore,LLSAW with larger effective electromechanical coupling coefficients(K_(eff)^(2))values exhibits greater phase velocity shifts and attenuation coefficients,with a maximum phase velocity tuning of 1.22%achieved.It is anticipated that the proposed devices will find utility in a variety of applications necessitating tunable acoustic components.展开更多
Silicon photonics(SiPh)has emerged as the predominant platform across a wide range of integrated photonics applications,encompassing not only mainstream fields such as optical communications and microwave signal proce...Silicon photonics(SiPh)has emerged as the predominant platform across a wide range of integrated photonics applications,encompassing not only mainstream fields such as optical communications and microwave signal processing but also burgeoning areas such as artificial intelligence and quantum processing.A vital component in most SiPh applications is the optical phase shifter,which is essential for varying the phase of light with minimal optical loss.Historically,SiPh phase shifters have primarily utilized the thermo-optic coefficient of silicon for their operation.Thermo-optic phase shifters(TOPSs)offer significant advantages,including excellent compatibility with complementary metal-oxide-semiconductor technology and the potential for negligible optical loss,making them highly scalable.However,the inherent heating mechanism of TOPSs renders them power-hungry and slow,which is a drawback for many applications.We thoroughly examine the principal configurations and optimization strategies that have been proposed for achieving energy-efficient and fast TOPSs.Furthermore,we compare TOPSs with other electro-optic mechanisms and technologies poised to revolutionize phase shifter development on the SiPh platform.展开更多
A two-bit phase shifter with distributed microelectromechanical system (MEMS) transmission line (DMTL) is developed,and a novel structure which be actuated by coplanar waveguide transmission line (CPW-actuation struct...A two-bit phase shifter with distributed microelectromechanical system (MEMS) transmission line (DMTL) is developed,and a novel structure which be actuated by coplanar waveguide transmission line (CPW-actuation structure) is proposed,which can reduce the actuation voltage significantly.The measured result,with actuation voltage less than 20V,0°/20.1°/41.9°/68.2° phase shift and -1.2dB insert loss at 20GHz,is demonstrated,and insertion loss/return loss is better than -1.8dB/-11dB from DC to 32GHz.The experimental results highlight the potential of a low-loss and broadband digital MEMS phase shifter on a high-permittivity substrate.展开更多
To implement the multi-way phase shifting maintaining the compact size and simplicity in structure,the uniform reference line concept was proposed for the differential phase shifter.However,the performance in bandwidt...To implement the multi-way phase shifting maintaining the compact size and simplicity in structure,the uniform reference line concept was proposed for the differential phase shifter.However,the performance in bandwidth and phase range deteriorates with the additional requirements considered.To solve this problem,a quarter wavelength coupled line section loaded with open/short stubs is proposed as the basic element to implement the main line and also reference line.According to the theoretical analysis on this basic element,the loading stubs can be used to control the phase shift and also the phase slope of the basic element without affecting the amplitude property.With the predetermined parameters of the uniform reference line,only two parameters are required for the implementation of different differential phase shifts.This demonstrates the high simplicity of the proposed structure.For demonstration,an eight-way differential phase shifter operating at 3.5 GHz was implemented using the vertically installed planar structure.The prototype was further fabricated and measured.Good agreement between simulation and measurement can be observed.The implemented phase shifter can provide a wide range of phase shifting values from 45°to 315°with reference to the uniform reference line over a relative bandwidth of 62.3%.展开更多
The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, w...The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, which is based on right-handed nonlinear transmission lines and consists of a coplanar waveguide transmission line and periodically distributed GaAs planar Schottky varactor diode. The distributed-Schottky transmission-line-type phase shifter at a bias voltage greater than 1.5 V presents a continuous 0°–360° differential phase shift over a frequency range from 0 to 33 GHz. It is demonstrated that the minimum insertion loss is about 0.5 dB and that the return loss is less than-10 dB over the frequency band of 0–33 GHz at a reverse bias voltage less than 4.5 V. These excellent characteristics, such as broad differential phase shift, low insertion loss, and return loss, indicate that the proposed phase shifter can entirely be integrated into a phased array radar circuit.展开更多
The voltage controlled oscillator-based （VCO-based） continuous-time delta-sigma （CTDS） analog to digital converter （ADC） suffers from nonlinearity and mismatch in its feedback network. A new feedback network con...The voltage controlled oscillator-based （VCO-based） continuous-time delta-sigma （CTDS） analog to digital converter （ADC） suffers from nonlinearity and mismatch in its feedback network. A new feedback network consisting of a phase shifter is proposed. The phase shifter replaces the digital to analog converter （DAC） in the proposed architecture. Feasibility of the proposed idea is discussed and its higher performance is illustrated through a behavioral simulation approach （CppSim）. We have also developed the phase shifter as a variable all-pass filter in the C language. The nonlinearity and mismatch of the system caused by DAC is mitigated, resulting in higher signal to noise ratio （SNR） and signal to noise and distortion ratio （SNDR）, respectively.展开更多
Generation of single-sideband （SSB） multi-carrier source based on a recirculating frequency shifter （RFS） is anal- ysed theoretically and realized experimentally. The effects of affecting factors originating from ...Generation of single-sideband （SSB） multi-carrier source based on a recirculating frequency shifter （RFS） is anal- ysed theoretically and realized experimentally. The effects of affecting factors originating from the deviation from the right operation bias voltage and unbalanced amplitude, and the phase of the radio frequency （RF） drive signals on the performance of the multi-tone source are discussed in detail. Based on the theoretical analysis, high-quality 50-tone out- put is successfully realized. Experiments under some implementation imperfections are also carried out. The imperfect and low-quality output results are in good agreement with theoretical analysis.展开更多
A photonic-assisted radio frequency phase shifter with direct current voltage control is proposed using a polymer- based integrated Mach-Zehnder modulator. A closed-form expression of radio frequency （RF） signal pow...A photonic-assisted radio frequency phase shifter with direct current voltage control is proposed using a polymer- based integrated Mach-Zehnder modulator. A closed-form expression of radio frequency （RF） signal power and phase is given. Theoretical calculation reveals that by carefully setting the bias voltages, RF signal power variation lower than 1-dB and phase accuracy less than 3° can be achieved and are not degraded by perturbation of modulation index once the bias voltage drift is kept within -3% -- 3%.展开更多
A method of current drive with Ion Cyclotron Range of Frequency （ICRF） on Experimental Advanced Superconducting Tokomak （EAST） is described. A variety of liquid silicon oil heights in the phase shifter will bring ...A method of current drive with Ion Cyclotron Range of Frequency （ICRF） on Experimental Advanced Superconducting Tokomak （EAST） is described. A variety of liquid silicon oil heights in the phase shifter will bring the phase difference to the current drive. It is found that the current drive can be achieved by using the phase shifter. The liquid phase shifter is one of the impedance matching systems too.展开更多
In this article,a single-layer symmetrical full-port quasi-absorptive filtering phase shifter is presented.The proposed phase shifter is composed of a main quasi-absorptive filtering branch,a reference quasi-absorptiv...In this article,a single-layer symmetrical full-port quasi-absorptive filtering phase shifter is presented.The proposed phase shifter is composed of a main quasi-absorptive filtering branch,a reference quasi-absorptive filtering branch,and two delay lines.The proposed phase shifter achieves both phase controlling function and quasi-absorptive filtering function for the first time.Each quasi-absorptive filtering branch can realize the quasi-absorptive filtering function.Meanwhile,the constant phase shift can be obtained by combining the two quasi-absorptive filtering branches and the two delay lines.The design formulas can be derived from the even-and odd-mode network analysis,and then two quasi-absorptive filtering phase shifters can be devised easily and quickly.For verification,a 90°quasi-absorptive filtering phase shifter,which is critical for circularly polarized antenna systems,is simulated,manufactured,and measured.展开更多
With the development of research on integrated photonic quantum information processing,the integration level of the integrated quantum photonic circuits has been increasing continuously,which makes the calibration of ...With the development of research on integrated photonic quantum information processing,the integration level of the integrated quantum photonic circuits has been increasing continuously,which makes the calibration of the phase shifters on the chip increasingly difficult.For the calibration of multiple cascaded phase shifters that is not easy to be decoupled,the resources consumed by conventional brute force methods increase exponentially with the number of phase shifters,making it impossible to calibrate a relatively large number of cascaded phase shifters.In this work,we experimentally validate an efficient method for calibrating cascaded phase shifters that achieves an exponential increase in calibration efficiency compared to the conventional method,thus solving the calibration problem for multiple cascaded phase shifters.Specifically,we experimentally calibrate an integrated quantum photonic circuit with nine cascaded phase shifters and achieve a high-precision calibration with an average fidelity of 99.26%.展开更多
Broadband phase shifters are mostly proposed and fabricated based on the scheme proposed by Shiffman, which uses a coupled line with far ends connected together and a uniform transmission line to give a differential p...Broadband phase shifters are mostly proposed and fabricated based on the scheme proposed by Shiffman, which uses a coupled line with far ends connected together and a uniform transmission line to give a differential phase shift. Based on the unique dispersion property of the composite right/left-handed (CRLH) metamaterial structure, a new configuration is presented in this paper for fabricating the broadband differential phase shifter, which employs a novel CRLH metamaterial structure as one of the differential phase-shift arms, instead of the conventional coupled line. The new circuit can achieve a phase shift of 90° in an operational bandwidth as broad as one octave and its phase deviations are quite small. An original design of the novel broadband phase shifter is presented, in which the artificial CRLH structure was implemented by microstrip quasi-lumped elements. Both the simulated and measured results of the 90° broadband differential phase shifter are presented.展开更多
A 60 GHz phased array system for mm wave frequency in 5G is introduced and a 5 bit digitally controlled phase shifter in 40 nm CMOS technology is presented.In a phased array system,the signal to noise ratio(SNR)of the...A 60 GHz phased array system for mm wave frequency in 5G is introduced and a 5 bit digitally controlled phase shifter in 40 nm CMOS technology is presented.In a phased array system,the signal to noise ratio(SNR)of the receiver is improved with the beaming forming function.Therefore,the communication data rate and distance are improved accordingly.The phase shifter is the key component for achieving the beam forming function,and its resolution and power consumption are also very critical.In the second half of this paper,an analysis of phase shifter is introduced,and a 60 GHz 5 bit digitally controlled phase shifter in 40 nm complementary metal oxide semiconductor(CMOS)technology is presented.In this presented phase shifter,a hybrid structure is implemented for its advantage on lower phase deviation while keeping comparable loss.Meanwhile,this digitally controlled phase shifter is much more compact than other works.For all 32 states,the minimum phase error is 1.5°,and the maximum phase error is 6.8°.The measured insertion loss is-20.9±1 dB including pad loss at 60 GHz and the return loss is more than 10 dB over 57-64 GHz.The total chip size is 0.24 mm^2 with 0 mW DC power consumption.展开更多
To suppress the dispersion effect, an improved scheme was proposed for Mach-Zehnder intefferometer （MZI） based interleaver. The device consists of an MZI, a fiber loop （FL）, and a phase shifter inserted in FL. The...To suppress the dispersion effect, an improved scheme was proposed for Mach-Zehnder intefferometer （MZI） based interleaver. The device consists of an MZI, a fiber loop （FL）, and a phase shifter inserted in FL. The introduction of π phase shifter into FI, dramatically suppresses the dispersion effiect. Then the transmission response remains square-like shape, with low frequency deviation and high extinction ratio. Moreover, the lower frequency deviation is achieved by reducing the dispersion coefficient. For 100GHz-spacing interleaver, the 0.08nm deviation is reduced to 0.02nm by replacing G.652 with G.655.展开更多
The aim of the study of phase shifter on MEMS （micro-electro-mechanical systems） structures was to minimize the dimensions of the design achievement. Also, the main task was to achieve the reliability and durability...The aim of the study of phase shifter on MEMS （micro-electro-mechanical systems） structures was to minimize the dimensions of the design achievement. Also, the main task was to achieve the reliability and durability of the device. The calculation was based on the optimization technique （step by step） and the modeling of individual parts of the device, namely MEMS-keys that perform the main function--switching. The urgency of this problem is the development and study of one device as a universal, that is, automatically switches from two signals simultaneously. Designs are original and devises are the intellectual property of the authors. The program for modeling phase shifters Computer Simulation Technology Microwave Studio and its results are presented in the paper.展开更多
New low-power Level Shifter (LS) circuit is designed by using sleep transistor with Multi Threshold CMOS (MTCMOS) technique for robust logic voltage shifting from sub-threshold to above- threshold domain. MultiSupply ...New low-power Level Shifter (LS) circuit is designed by using sleep transistor with Multi Threshold CMOS (MTCMOS) technique for robust logic voltage shifting from sub-threshold to above- threshold domain. MultiSupply Voltage Design (MSVD) technique is mainly used for energy and speed in modern system-on-chip. In MSVD, level shifters are required to allow different voltage supply to shift from the lower power supply voltage to the higher power supply voltage. This new low-power level shifter circuit is also used for fast response and low leakage power consumption. This low leakage power consumption can be achieved through insertion of sleep transistor and proper transistors sizing. The proposed design efficiently converts 100 mv input signal into 1 v output signal and achieves the power of 2.56 nW by using 90 nm technology.展开更多
This brief presents an ultra-low voltage single-ended level shifter(LS)with a stacked current mirror and an improved split-controlled inverter as an output driver to enable wide-range voltage conversion.At the ultra-l...This brief presents an ultra-low voltage single-ended level shifter(LS)with a stacked current mirror and an improved split-controlled inverter as an output driver to enable wide-range voltage conversion.At the ultra-low input supply voltages,VDDL,the differential LS circuit will gradually be dysfunctional as the inverter produces limited voltage swings at the output.Some prior works have replaced the inverter with a pass transistor,whose gate is connected to the lower supply voltage,VDDL,to ensure the proper operation of the current mirror in its pull-up network(PUN).This requires the use of the“tie-high”standard cell to prevent gate breakdown in the pass transistor but it is unable to function properly at ultra-supply voltage.To solve this problem,we proposed to connect the pass transistor gate to the input transistor’s drain.The proposed LS circuit and prior single-ended LS circuit works have been fabricated in 55nm CMOS technology and a total of 10 chips for each circuit have been measured.The proposed LS circuit operates with a single input signal with a supply voltage of 100mV at a frequency of 1MHz.With a VDDL of 200mV and VDDH of 1.2V,the measured propagation delay is 182.1ns and the energy per transition(EPT)is around 4.35∼5.44 pJ.It has achieved a 1.08∼2.25×improvement in the Figure of Merit(FoM)than prior multi-supply works and a maximum improvement of 1134×compared to prior single-supply work.The FoM is based on the ratio between propagation delay and level conversion differences,which enables us to understand the circuit’s ability to operate efficiently under wide signal-level conversion.展开更多
基金supported by National Natural Science Foundation of China(Grant Nos:62122004 and 62274082)Beijing Natural Science Foundation(Grant No.Z210006)+5 种基金Hong Kong Research Grant Council(Grant Nos.27206321,17205922,17212923,C1009-22G and T45-701/22-R)Shenzhen Science and Technology Innovation Commission(SGDX20220530111405040,JCYJ20220530115411025 and JCYJ20210324120409025)Research on mechanism of source/drain ohmic contact and the related Ga N p-FET(Grant No:2023A1515030034)Research on high-reliable Ga N power device and the related industrial power system(Grant No:HZQB-KCZYZ-2021052)supported by ACCESS-AI Chip Center for Emerging Smart Systems,sponsored by Innovation and Technology Fund(ITF),Hong Kong SARthe assistance of SUSTech Core Research Facilities。
文摘Reconfigurable surface acoustic wave(SAW)phase shifters have garnered significant attention owing to their potential applications in emerging fields such as secure wireless communication,adaptable signal processing,and intelligent sensing systems.Among various modulation methods,employing gate voltage-controlled tuning methodologies that leverage acoustoelectric interactions has proven to be an efficient modulation approach that requires a low bias voltage.However,current acoustoelectric devices suffer from limited tunability,intricate heterogeneous structures,and complex manufacturing processes,all of which impede their practical applications.In this study,we present a novel material system for voltage-tunable SAW phase shifters.This system incorporates an atomic layer deposition ZnO thin-film transistors on LiNbO_(3)structure.This structure combines the benefits of LiNbO_(3)'s high electromechanical coupling coefficient(K^(2))and ZnO's superior conductivity adjustability.Besides,the device possesses a simplified structural configuration,which is easy to fabricate.Devices with different mesa lengths were fabricated and measured,and two of the different modes were compared.The results indicate that both the maximum phase shift and attenuation of the Rayleigh mode and longitudinal leaky SAW(LLSAW)increase proportionally with mesa length.Furthermore,LLSAW with larger effective electromechanical coupling coefficients(K_(eff)^(2))values exhibits greater phase velocity shifts and attenuation coefficients,with a maximum phase velocity tuning of 1.22%achieved.It is anticipated that the proposed devices will find utility in a variety of applications necessitating tunable acoustic components.
基金funding from MCIN/AEI/10.13039/501100011033(Grant Nos.PID2022-137787OB-I00 and TED2021-132211B-I00)and“ERDF:Away of making Europe”The PROMETEO program(Grant No.CIPROM/2022/14)funded by Generalitat Valenciana is also acknowledged+2 种基金J.Parra would like to acknowledge Universitat Politècnica de València(Grant No.PAID-10-23)J.Navarro acknowledges a grant from the University of Valencia/Ministry of Universities(Government of Spain),modality“Margarita Salas”(Grant No.MS21-037)funded by the European Union,Next-Generation EU.
文摘Silicon photonics(SiPh)has emerged as the predominant platform across a wide range of integrated photonics applications,encompassing not only mainstream fields such as optical communications and microwave signal processing but also burgeoning areas such as artificial intelligence and quantum processing.A vital component in most SiPh applications is the optical phase shifter,which is essential for varying the phase of light with minimal optical loss.Historically,SiPh phase shifters have primarily utilized the thermo-optic coefficient of silicon for their operation.Thermo-optic phase shifters(TOPSs)offer significant advantages,including excellent compatibility with complementary metal-oxide-semiconductor technology and the potential for negligible optical loss,making them highly scalable.However,the inherent heating mechanism of TOPSs renders them power-hungry and slow,which is a drawback for many applications.We thoroughly examine the principal configurations and optimization strategies that have been proposed for achieving energy-efficient and fast TOPSs.Furthermore,we compare TOPSs with other electro-optic mechanisms and technologies poised to revolutionize phase shifter development on the SiPh platform.
文摘A two-bit phase shifter with distributed microelectromechanical system (MEMS) transmission line (DMTL) is developed,and a novel structure which be actuated by coplanar waveguide transmission line (CPW-actuation structure) is proposed,which can reduce the actuation voltage significantly.The measured result,with actuation voltage less than 20V,0°/20.1°/41.9°/68.2° phase shift and -1.2dB insert loss at 20GHz,is demonstrated,and insertion loss/return loss is better than -1.8dB/-11dB from DC to 32GHz.The experimental results highlight the potential of a low-loss and broadband digital MEMS phase shifter on a high-permittivity substrate.
基金The work described in this paper was supported by the National Natural Science Foundation of China(No.62071503).
文摘To implement the multi-way phase shifting maintaining the compact size and simplicity in structure,the uniform reference line concept was proposed for the differential phase shifter.However,the performance in bandwidth and phase range deteriorates with the additional requirements considered.To solve this problem,a quarter wavelength coupled line section loaded with open/short stubs is proposed as the basic element to implement the main line and also reference line.According to the theoretical analysis on this basic element,the loading stubs can be used to control the phase shift and also the phase slope of the basic element without affecting the amplitude property.With the predetermined parameters of the uniform reference line,only two parameters are required for the implementation of different differential phase shifts.This demonstrates the high simplicity of the proposed structure.For demonstration,an eight-way differential phase shifter operating at 3.5 GHz was implemented using the vertically installed planar structure.The prototype was further fabricated and measured.Good agreement between simulation and measurement can be observed.The implemented phase shifter can provide a wide range of phase shifting values from 45°to 315°with reference to the uniform reference line over a relative bandwidth of 62.3%.
基金Project supported by the Fundamental Research Funds for Central Universities,China(Grant No.XDJK2013B004)the Research Fund for the Doctoral Program of Southwest University,China(Grant No.SWU111030)the State Key Laboratory for Millimeter Waves of Southeast University,China(Grant No.K201312)
文摘The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, which is based on right-handed nonlinear transmission lines and consists of a coplanar waveguide transmission line and periodically distributed GaAs planar Schottky varactor diode. The distributed-Schottky transmission-line-type phase shifter at a bias voltage greater than 1.5 V presents a continuous 0°–360° differential phase shift over a frequency range from 0 to 33 GHz. It is demonstrated that the minimum insertion loss is about 0.5 dB and that the return loss is less than-10 dB over the frequency band of 0–33 GHz at a reverse bias voltage less than 4.5 V. These excellent characteristics, such as broad differential phase shift, low insertion loss, and return loss, indicate that the proposed phase shifter can entirely be integrated into a phased array radar circuit.
基金supported by Iran Telecommunication Research Center under Grant No. 4222/500
文摘The voltage controlled oscillator-based （VCO-based） continuous-time delta-sigma （CTDS） analog to digital converter （ADC） suffers from nonlinearity and mismatch in its feedback network. A new feedback network consisting of a phase shifter is proposed. The phase shifter replaces the digital to analog converter （DAC） in the proposed architecture. Feasibility of the proposed idea is discussed and its higher performance is illustrated through a behavioral simulation approach （CppSim）. We have also developed the phase shifter as a variable all-pass filter in the C language. The nonlinearity and mismatch of the system caused by DAC is mitigated, resulting in higher signal to noise ratio （SNR） and signal to noise and distortion ratio （SNDR）, respectively.
基金Project supported by the National Natural Science Foundation of China (Grant No.60977049)the Chinese Universities Scientific Fund (Grant No.BUPT 2009RC0413)
文摘Generation of single-sideband （SSB） multi-carrier source based on a recirculating frequency shifter （RFS） is anal- ysed theoretically and realized experimentally. The effects of affecting factors originating from the deviation from the right operation bias voltage and unbalanced amplitude, and the phase of the radio frequency （RF） drive signals on the performance of the multi-tone source are discussed in detail. Based on the theoretical analysis, high-quality 50-tone out- put is successfully realized. Experiments under some implementation imperfections are also carried out. The imperfect and low-quality output results are in good agreement with theoretical analysis.
基金Project supported by the Fundamental Research Funds for the Central Universities of China(Grant No.2014JBM013)
文摘A photonic-assisted radio frequency phase shifter with direct current voltage control is proposed using a polymer- based integrated Mach-Zehnder modulator. A closed-form expression of radio frequency （RF） signal power and phase is given. Theoretical calculation reveals that by carefully setting the bias voltages, RF signal power variation lower than 1-dB and phase accuracy less than 3° can be achieved and are not degraded by perturbation of modulation index once the bias voltage drift is kept within -3% -- 3%.
文摘A method of current drive with Ion Cyclotron Range of Frequency （ICRF） on Experimental Advanced Superconducting Tokomak （EAST） is described. A variety of liquid silicon oil heights in the phase shifter will bring the phase difference to the current drive. It is found that the current drive can be achieved by using the phase shifter. The liquid phase shifter is one of the impedance matching systems too.
基金supported by National Natural Science Foundations of China(No.U20A20203,No.61971052,U21A20510)the Fundamental Research Funds for the Central Universities(2021XDA07-1)Key Research and Development Project of Guangdong Province(2020B0101080001)。
文摘In this article,a single-layer symmetrical full-port quasi-absorptive filtering phase shifter is presented.The proposed phase shifter is composed of a main quasi-absorptive filtering branch,a reference quasi-absorptive filtering branch,and two delay lines.The proposed phase shifter achieves both phase controlling function and quasi-absorptive filtering function for the first time.Each quasi-absorptive filtering branch can realize the quasi-absorptive filtering function.Meanwhile,the constant phase shift can be obtained by combining the two quasi-absorptive filtering branches and the two delay lines.The design formulas can be derived from the even-and odd-mode network analysis,and then two quasi-absorptive filtering phase shifters can be devised easily and quickly.For verification,a 90°quasi-absorptive filtering phase shifter,which is critical for circularly polarized antenna systems,is simulated,manufactured,and measured.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFA0305200)the Key Research and Development Program of Guangdong Province,China(Grant Nos.2018B030329001 and 2018B030325001)the National Natural Science Foundation of China(Grant No.61974168)。
文摘With the development of research on integrated photonic quantum information processing,the integration level of the integrated quantum photonic circuits has been increasing continuously,which makes the calibration of the phase shifters on the chip increasingly difficult.For the calibration of multiple cascaded phase shifters that is not easy to be decoupled,the resources consumed by conventional brute force methods increase exponentially with the number of phase shifters,making it impossible to calibrate a relatively large number of cascaded phase shifters.In this work,we experimentally validate an efficient method for calibrating cascaded phase shifters that achieves an exponential increase in calibration efficiency compared to the conventional method,thus solving the calibration problem for multiple cascaded phase shifters.Specifically,we experimentally calibrate an integrated quantum photonic circuit with nine cascaded phase shifters and achieve a high-precision calibration with an average fidelity of 99.26%.
基金Project supported by the National Basic Research Program (973) of China (No. 2004CB719802)the National Natural Science Founda-tion of China (No. 60378037)the Science and Technology Department of Zhejiang Province, China (No. 2005C31004)
文摘Broadband phase shifters are mostly proposed and fabricated based on the scheme proposed by Shiffman, which uses a coupled line with far ends connected together and a uniform transmission line to give a differential phase shift. Based on the unique dispersion property of the composite right/left-handed (CRLH) metamaterial structure, a new configuration is presented in this paper for fabricating the broadband differential phase shifter, which employs a novel CRLH metamaterial structure as one of the differential phase-shift arms, instead of the conventional coupled line. The new circuit can achieve a phase shift of 90° in an operational bandwidth as broad as one octave and its phase deviations are quite small. An original design of the novel broadband phase shifter is presented, in which the artificial CRLH structure was implemented by microstrip quasi-lumped elements. Both the simulated and measured results of the 90° broadband differential phase shifter are presented.
基金supported by the National Science Foundation of China (No. 61828401)
文摘A 60 GHz phased array system for mm wave frequency in 5G is introduced and a 5 bit digitally controlled phase shifter in 40 nm CMOS technology is presented.In a phased array system,the signal to noise ratio(SNR)of the receiver is improved with the beaming forming function.Therefore,the communication data rate and distance are improved accordingly.The phase shifter is the key component for achieving the beam forming function,and its resolution and power consumption are also very critical.In the second half of this paper,an analysis of phase shifter is introduced,and a 60 GHz 5 bit digitally controlled phase shifter in 40 nm complementary metal oxide semiconductor(CMOS)technology is presented.In this presented phase shifter,a hybrid structure is implemented for its advantage on lower phase deviation while keeping comparable loss.Meanwhile,this digitally controlled phase shifter is much more compact than other works.For all 32 states,the minimum phase error is 1.5°,and the maximum phase error is 6.8°.The measured insertion loss is-20.9±1 dB including pad loss at 60 GHz and the return loss is more than 10 dB over 57-64 GHz.The total chip size is 0.24 mm^2 with 0 mW DC power consumption.
基金Supported by the National Natural Science Foundation of China （No.10174057, 90201011） and the Key Project of Chinese Ministry of Education （No.105148）.
文摘To suppress the dispersion effect, an improved scheme was proposed for Mach-Zehnder intefferometer （MZI） based interleaver. The device consists of an MZI, a fiber loop （FL）, and a phase shifter inserted in FL. The introduction of π phase shifter into FI, dramatically suppresses the dispersion effiect. Then the transmission response remains square-like shape, with low frequency deviation and high extinction ratio. Moreover, the lower frequency deviation is achieved by reducing the dispersion coefficient. For 100GHz-spacing interleaver, the 0.08nm deviation is reduced to 0.02nm by replacing G.652 with G.655.
文摘The aim of the study of phase shifter on MEMS （micro-electro-mechanical systems） structures was to minimize the dimensions of the design achievement. Also, the main task was to achieve the reliability and durability of the device. The calculation was based on the optimization technique （step by step） and the modeling of individual parts of the device, namely MEMS-keys that perform the main function--switching. The urgency of this problem is the development and study of one device as a universal, that is, automatically switches from two signals simultaneously. Designs are original and devises are the intellectual property of the authors. The program for modeling phase shifters Computer Simulation Technology Microwave Studio and its results are presented in the paper.
文摘New low-power Level Shifter (LS) circuit is designed by using sleep transistor with Multi Threshold CMOS (MTCMOS) technique for robust logic voltage shifting from sub-threshold to above- threshold domain. MultiSupply Voltage Design (MSVD) technique is mainly used for energy and speed in modern system-on-chip. In MSVD, level shifters are required to allow different voltage supply to shift from the lower power supply voltage to the higher power supply voltage. This new low-power level shifter circuit is also used for fast response and low leakage power consumption. This low leakage power consumption can be achieved through insertion of sleep transistor and proper transistors sizing. The proposed design efficiently converts 100 mv input signal into 1 v output signal and achieves the power of 2.56 nW by using 90 nm technology.
基金supported by the National Natural Science Foundation of China under Grant 62434006 and Grant 62350610271.
文摘This brief presents an ultra-low voltage single-ended level shifter(LS)with a stacked current mirror and an improved split-controlled inverter as an output driver to enable wide-range voltage conversion.At the ultra-low input supply voltages,VDDL,the differential LS circuit will gradually be dysfunctional as the inverter produces limited voltage swings at the output.Some prior works have replaced the inverter with a pass transistor,whose gate is connected to the lower supply voltage,VDDL,to ensure the proper operation of the current mirror in its pull-up network(PUN).This requires the use of the“tie-high”standard cell to prevent gate breakdown in the pass transistor but it is unable to function properly at ultra-supply voltage.To solve this problem,we proposed to connect the pass transistor gate to the input transistor’s drain.The proposed LS circuit and prior single-ended LS circuit works have been fabricated in 55nm CMOS technology and a total of 10 chips for each circuit have been measured.The proposed LS circuit operates with a single input signal with a supply voltage of 100mV at a frequency of 1MHz.With a VDDL of 200mV and VDDH of 1.2V,the measured propagation delay is 182.1ns and the energy per transition(EPT)is around 4.35∼5.44 pJ.It has achieved a 1.08∼2.25×improvement in the Figure of Merit(FoM)than prior multi-supply works and a maximum improvement of 1134×compared to prior single-supply work.The FoM is based on the ratio between propagation delay and level conversion differences,which enables us to understand the circuit’s ability to operate efficiently under wide signal-level conversion.
