The enhancement of perpendicular magnetic anisotropy(PMA)is critical for the continuous growth of magnetic memory density.Material systems that possess high interfacial PMA typically involve strong spin-orbit coupling...The enhancement of perpendicular magnetic anisotropy(PMA)is critical for the continuous growth of magnetic memory density.Material systems that possess high interfacial PMA typically involve strong spin-orbit coupling(SOC)or transition metal/oxide interfaces.In contrast,the role of 3d light metals in enhancing the interfacial PMA has been less investigated.This study demonstrated that the insertion of a few atomic Cr layers into Pt/Co/Pt/Ta heterostructures with Cr between the 1 atomic Pt layer and the 3 nm Ta overlayer enhanced the effective PMA energy(K_(eff))by a factor of 4.First-principles calculations revealed that the underlying mechanism originated from Cr-Pt d-orbital hybridization,leading to a corresponding orbital redistribution and significantly increasing the magnetic anisotropy energy.The progressive reduction in the spin-orbit torque(SOT)efficiency with increasing Cr thickness might stem from the enhanced orbital Rashba–Edelstein effect at the Pt/Cr interface.Furthermore,the wedging of a few atomic Cr layers caused the robust field-free SOT switching of perpendicular magnetization,which was due to the lateral PMA gradients enabled by the strong dependence of the PMA on the Cr thickness.The results provide a method for interfacial PMA enhancement by d-orbital hybridization of 3d–5d electrons and an alternative to field-free SOT switching towards low-power and high-density memory applications.展开更多
BACKGROUND SMARCB1/INI1-deficient pancreatic undifferentiated rhabdoid carcinoma is a highly aggressive tumor,and spontaneous splenic rupture(SSR)as its presenting manifestation is rarely reported among pancreatic mal...BACKGROUND SMARCB1/INI1-deficient pancreatic undifferentiated rhabdoid carcinoma is a highly aggressive tumor,and spontaneous splenic rupture(SSR)as its presenting manifestation is rarely reported among pancreatic malignancies.CASE SUMMARY We herein report a rare case of a 59-year-old female who presented with acute left upper quadrant abdominal pain without any history of trauma.Abdominal imaging demonstrated a heterogeneous splenic lesion with hemoperitoneum,raising clinical suspicion of SSR.Emergency laparotomy revealed a pancreatic tumor invading the spleen and left kidney,with associated splenic rupture and dense adhesions,necessitating en bloc resection of the distal pancreas,spleen,and left kidney.Histopathology revealed a biphasic malignancy composed of moderately differentiated pancreatic ductal adenocarcinoma and an undifferentiated carcinoma with rhabdoid morphology and loss of SMARCB1 expression.Immunohistochemical analysis confirmed complete loss of SMARCB1/INI1 in the undifferentiated component,along with a high Ki-67 index(approximately 80%)and CD10 positivity.The ductal adenocarcinoma component retained SMARCB1/INI1 expression and was positive for CK7 and CK-pan.Transitional zones between the two tumor components suggested progressive dedifferentiation and underlying genomic instability.The patient received adjuvant chemotherapy with gemcitabine and nab-paclitaxel and maintained a satisfactory quality of life at the 6-month follow-up.CONCLUSION This study reports a rare case of SMARCB1/INI1-deficient undifferentiated rhabdoid carcinoma of the pancreas combined with ductal adenocarcinoma,presenting as SSR-an exceptionally uncommon initial manifestation of pancreatic malignancy.展开更多
Both D-stability and finite L2-gain properties are studiedfor a class of uncertain discrete-time systems with timevaryingnetwork-induced delays. By using coordinate transformand delay partition, the D-stability and H...Both D-stability and finite L2-gain properties are studiedfor a class of uncertain discrete-time systems with timevaryingnetwork-induced delays. By using coordinate transformand delay partition, the D-stability and H∞ performance problemsfor such networked control systems （NCSs） are equivalentlytransferred into the corresponding problems for switching systemswith arbitrary switching. Then, a sufficient condition for the existenceof the robust D-stabilizing controllers is derived in termsof linear matrix inequality （LMI）, and the design method is alsopresented for the state feedback controllers which guarantee thatall the closed-loop poles remain inside the specified disk D（α,r）and the desired disturbance attenuation level. Finally, an illustrativeexample is given to demonstrate the effectiveness of the proposedresults.展开更多
The resistive random access memory(RRAM)has stimulated a variety of promising applications including programmable analog circuit,massive data storage,neuromorphic computing,etc.These new emerging applications have hug...The resistive random access memory(RRAM)has stimulated a variety of promising applications including programmable analog circuit,massive data storage,neuromorphic computing,etc.These new emerging applications have huge demands on high integration density and low power consumption.The cross-point configuration or passive array,which offers the smallest footprint of cell size and feasible capability of multi-layer stacking,has received broad attention from the research community.In such array,correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells.This target requires nonlinear I-V characteristics of the memory cell,which can be realized by either adding separate selector or developing implicit build-in nonlinear cells.The performance of a passive array largely depends on the cell nonlinearity,reliability,on/off ratio,line resistance,thermal coupling,etc.This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration.First,the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures.Next,the state of the arts on the development of various selector devices and self-selective cells are presented.Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles.Then,the reliability issues in 3D array are summarized in terms of uniformity,endurance,retention,and disturbance.Subsequently,scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed,and applications of 3D RRAM beyond storage,such as neuromorphic computing and CMOL circuit are discussed later.Summary and outlooks are given in the final.展开更多
The analysis of the impulse voltage on the internal electric field of the cable joint plays a key role in studying the breakdown of the joint. Based on the finite element method, a three-dimensional electromagnetic fi...The analysis of the impulse voltage on the internal electric field of the cable joint plays a key role in studying the breakdown of the joint. Based on the finite element method, a three-dimensional electromagnetic field simulation model of the cable joint is established in this paper. Simulation results show that the voltage at the head of the cable joint reaches about twice the impulse voltage. The increase of the conductivity of semi-conductive material also leads to the increase of electric field intensity. Then, several points and curves at different positions are selected for further analysis in this paper. Among them, the electric field distortion at the edge of the high voltage shield is the most serious and the electric field in the air gap is the least.展开更多
The Development of 3D CAD technology presents a new effective tool in designing outdoor switch yard for power plant. A new layout pattern of 330 kV switch yard (SWYD) of aligned type was studied with this method. Some...The Development of 3D CAD technology presents a new effective tool in designing outdoor switch yard for power plant. A new layout pattern of 330 kV switch yard (SWYD) of aligned type was studied with this method. Some issues about computerized 3D modes applied in SWYD design are also discussed in this paper.展开更多
A high-speed high-accuracy fully differenttial operational amplifier （op-amp） is realized based on no-Miller-capacitor feedforward （NMCF） compensation scheme. In order to achieve a good phase margin, the NMCF comp...A high-speed high-accuracy fully differenttial operational amplifier （op-amp） is realized based on no-Miller-capacitor feedforward （NMCF） compensation scheme. In order to achieve a good phase margin, the NMCF compensation scheme uses the positive phase shift of left-half-plane （LHP） zero caused by the feedforvvard path to counteract the negative phase shift of the non-dominant pole. Compared to traditional Miller compensation method, the op-amp obtains high gain and wide band synchronously without the pole-splitting effect while saves significant chip area due to the absence of the Miller capacitor. Simulated by the 0.35 μm CMOS RF technology, the result shows that the open-loop gain of the op-amp is 118 dB with the unity gain-bandwidth （UGBW） of 1 GHz, and the phase margin is 61°while the settling time is 5.8 ns when achieving 0.01% accuracy. The op-amp is especially suitable for the front-end sample/hold （S/H） cell and the multiplying D/A converter （MDAC） module of the high-speed high-resolution pipelined A/D converters （AVCs）.展开更多
At present,the naked-eye three-dimensional(3D)display technology still has some drawbacks,such as low brightness uniformity,high crosstalk,low light efficiency,short viewing distance,and the manufacturing is difficult...At present,the naked-eye three-dimensional(3D)display technology still has some drawbacks,such as low brightness uniformity,high crosstalk,low light efficiency,short viewing distance,and the manufacturing is difficulty.Based on the principle of naked-eye 3D display and the Fresnel optical theory,this paper designs a Fresnel lens array and the star-shaped liquid crystal display(LCD)switch of unit LCD screen to achieve low-crosstalk and high brightness uniformity for the autostereoscopic 3D display.The unit parameters of a 139.7 cm 4K model autostereoscopic 3D displayer are provided and they are optimized by the TracePro software.The results show that when the pitch of the Fresnel lens on the exit surface is 0.304 mm,the width of each serration of Fresnel lens is 0.0234 mm,the length of the Fresnel lens is 2.87 mm,and the center height of star-shaped LCD switch is 0.030 mm,the center length is 0.040 mm,the width of star-shaped LCD switch is 0.050 mm,and the image crosstalk is less than 2%when the viewing distance is 2.50 m.The problem on the brightness of the image in different positions is improved.展开更多
基金supported by the “Pioneer” and “Leading Goose” R&D Program of Zhejiang Province (Grant No.2022C01053)the National Natural Science Foundation of China (Grant No.62293493)the Natural Science Foundation of Zhejiang Province,China (Grant No.LQ21A050001)。
文摘The enhancement of perpendicular magnetic anisotropy(PMA)is critical for the continuous growth of magnetic memory density.Material systems that possess high interfacial PMA typically involve strong spin-orbit coupling(SOC)or transition metal/oxide interfaces.In contrast,the role of 3d light metals in enhancing the interfacial PMA has been less investigated.This study demonstrated that the insertion of a few atomic Cr layers into Pt/Co/Pt/Ta heterostructures with Cr between the 1 atomic Pt layer and the 3 nm Ta overlayer enhanced the effective PMA energy(K_(eff))by a factor of 4.First-principles calculations revealed that the underlying mechanism originated from Cr-Pt d-orbital hybridization,leading to a corresponding orbital redistribution and significantly increasing the magnetic anisotropy energy.The progressive reduction in the spin-orbit torque(SOT)efficiency with increasing Cr thickness might stem from the enhanced orbital Rashba–Edelstein effect at the Pt/Cr interface.Furthermore,the wedging of a few atomic Cr layers caused the robust field-free SOT switching of perpendicular magnetization,which was due to the lateral PMA gradients enabled by the strong dependence of the PMA on the Cr thickness.The results provide a method for interfacial PMA enhancement by d-orbital hybridization of 3d–5d electrons and an alternative to field-free SOT switching towards low-power and high-density memory applications.
文摘BACKGROUND SMARCB1/INI1-deficient pancreatic undifferentiated rhabdoid carcinoma is a highly aggressive tumor,and spontaneous splenic rupture(SSR)as its presenting manifestation is rarely reported among pancreatic malignancies.CASE SUMMARY We herein report a rare case of a 59-year-old female who presented with acute left upper quadrant abdominal pain without any history of trauma.Abdominal imaging demonstrated a heterogeneous splenic lesion with hemoperitoneum,raising clinical suspicion of SSR.Emergency laparotomy revealed a pancreatic tumor invading the spleen and left kidney,with associated splenic rupture and dense adhesions,necessitating en bloc resection of the distal pancreas,spleen,and left kidney.Histopathology revealed a biphasic malignancy composed of moderately differentiated pancreatic ductal adenocarcinoma and an undifferentiated carcinoma with rhabdoid morphology and loss of SMARCB1 expression.Immunohistochemical analysis confirmed complete loss of SMARCB1/INI1 in the undifferentiated component,along with a high Ki-67 index(approximately 80%)and CD10 positivity.The ductal adenocarcinoma component retained SMARCB1/INI1 expression and was positive for CK7 and CK-pan.Transitional zones between the two tumor components suggested progressive dedifferentiation and underlying genomic instability.The patient received adjuvant chemotherapy with gemcitabine and nab-paclitaxel and maintained a satisfactory quality of life at the 6-month follow-up.CONCLUSION This study reports a rare case of SMARCB1/INI1-deficient undifferentiated rhabdoid carcinoma of the pancreas combined with ductal adenocarcinoma,presenting as SSR-an exceptionally uncommon initial manifestation of pancreatic malignancy.
基金supported by the National Natural Science Foundation of China(61403344)
文摘Both D-stability and finite L2-gain properties are studiedfor a class of uncertain discrete-time systems with timevaryingnetwork-induced delays. By using coordinate transformand delay partition, the D-stability and H∞ performance problemsfor such networked control systems （NCSs） are equivalentlytransferred into the corresponding problems for switching systemswith arbitrary switching. Then, a sufficient condition for the existenceof the robust D-stabilizing controllers is derived in termsof linear matrix inequality （LMI）, and the design method is alsopresented for the state feedback controllers which guarantee thatall the closed-loop poles remain inside the specified disk D（α,r）and the desired disturbance attenuation level. Finally, an illustrativeexample is given to demonstrate the effectiveness of the proposedresults.
基金the National Key R&D Program of China(Grant Nos.2018YFB0407501 and 2016YFA0201800)the National Natural Science Foundation of China(Grant Nos.61804173,61922083,61804167,61904200,and 61821091)the fourth China Association for Science and Technology Youth Talent Support Project(Grant No.2019QNRC001).
文摘The resistive random access memory(RRAM)has stimulated a variety of promising applications including programmable analog circuit,massive data storage,neuromorphic computing,etc.These new emerging applications have huge demands on high integration density and low power consumption.The cross-point configuration or passive array,which offers the smallest footprint of cell size and feasible capability of multi-layer stacking,has received broad attention from the research community.In such array,correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells.This target requires nonlinear I-V characteristics of the memory cell,which can be realized by either adding separate selector or developing implicit build-in nonlinear cells.The performance of a passive array largely depends on the cell nonlinearity,reliability,on/off ratio,line resistance,thermal coupling,etc.This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration.First,the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures.Next,the state of the arts on the development of various selector devices and self-selective cells are presented.Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles.Then,the reliability issues in 3D array are summarized in terms of uniformity,endurance,retention,and disturbance.Subsequently,scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed,and applications of 3D RRAM beyond storage,such as neuromorphic computing and CMOL circuit are discussed later.Summary and outlooks are given in the final.
文摘The analysis of the impulse voltage on the internal electric field of the cable joint plays a key role in studying the breakdown of the joint. Based on the finite element method, a three-dimensional electromagnetic field simulation model of the cable joint is established in this paper. Simulation results show that the voltage at the head of the cable joint reaches about twice the impulse voltage. The increase of the conductivity of semi-conductive material also leads to the increase of electric field intensity. Then, several points and curves at different positions are selected for further analysis in this paper. Among them, the electric field distortion at the edge of the high voltage shield is the most serious and the electric field in the air gap is the least.
文摘The Development of 3D CAD technology presents a new effective tool in designing outdoor switch yard for power plant. A new layout pattern of 330 kV switch yard (SWYD) of aligned type was studied with this method. Some issues about computerized 3D modes applied in SWYD design are also discussed in this paper.
文摘A high-speed high-accuracy fully differenttial operational amplifier （op-amp） is realized based on no-Miller-capacitor feedforward （NMCF） compensation scheme. In order to achieve a good phase margin, the NMCF compensation scheme uses the positive phase shift of left-half-plane （LHP） zero caused by the feedforvvard path to counteract the negative phase shift of the non-dominant pole. Compared to traditional Miller compensation method, the op-amp obtains high gain and wide band synchronously without the pole-splitting effect while saves significant chip area due to the absence of the Miller capacitor. Simulated by the 0.35 μm CMOS RF technology, the result shows that the open-loop gain of the op-amp is 118 dB with the unity gain-bandwidth （UGBW） of 1 GHz, and the phase margin is 61°while the settling time is 5.8 ns when achieving 0.01% accuracy. The op-amp is especially suitable for the front-end sample/hold （S/H） cell and the multiplying D/A converter （MDAC） module of the high-speed high-resolution pipelined A/D converters （AVCs）.
基金supported by the 2022 Fujian Provincial Young and Middle-aged Teacher Education and Research Project(Science and Technology)(No.JAT220468)the Xiamen Natural Science Foundation(No.3502Z20227334).
文摘At present,the naked-eye three-dimensional(3D)display technology still has some drawbacks,such as low brightness uniformity,high crosstalk,low light efficiency,short viewing distance,and the manufacturing is difficulty.Based on the principle of naked-eye 3D display and the Fresnel optical theory,this paper designs a Fresnel lens array and the star-shaped liquid crystal display(LCD)switch of unit LCD screen to achieve low-crosstalk and high brightness uniformity for the autostereoscopic 3D display.The unit parameters of a 139.7 cm 4K model autostereoscopic 3D displayer are provided and they are optimized by the TracePro software.The results show that when the pitch of the Fresnel lens on the exit surface is 0.304 mm,the width of each serration of Fresnel lens is 0.0234 mm,the length of the Fresnel lens is 2.87 mm,and the center height of star-shaped LCD switch is 0.030 mm,the center length is 0.040 mm,the width of star-shaped LCD switch is 0.050 mm,and the image crosstalk is less than 2%when the viewing distance is 2.50 m.The problem on the brightness of the image in different positions is improved.
