In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer...In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer were prepared by means of spin coating technique and mechanical mixing of organic and inorganic materials.V_(2)O_(5)was studied for its effects on the surface morphology,chemical composition,and optical transmittance of PEDOT:PSS films.The findings of the study show that the addition of V_(2)O_(5)particles changes the surface morphology of PEDOT:PSS films and promotes its superior ohmic contact with the Si interface.Furthermore,PEDOT:PSS incorporated with V_(2)O_(5)particles that have outstanding optical and semiconductor properties reduces the rate of carrier recombination at the device interface and blocks electron transport to the anode in the fabricated Si-based solar cells.When compared to conventional PEDOT:PSS/Si planar heterojunction solar cells,the fill factor,photoelectric conversion efficiency,open-circuit voltage,and short-circuit current density of the devices prepared in this study can be significantly improved,reaching up to 70.98%,15.17%,652 mV and 32.8 mA/cm^(2),respectively.This research provides a promising and effective method for improving the photoelectric conversion performance of PEDOT:PSS/Si heterojunction solar cells,which enables the application of V_(2)O_(5)in Si solar cells.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.52164050,51762043,61764009,51974143)National Key R&D Program of China(No.2018YFC1901801,No.2018YFC1901805)+1 种基金Major Science and Technology Project of Yunnan Province(202202AB080010,2019ZE00703)Yunnan University“Double First-class”Construction Joint Special Project-major project(202201BF070001-018).
文摘In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer were prepared by means of spin coating technique and mechanical mixing of organic and inorganic materials.V_(2)O_(5)was studied for its effects on the surface morphology,chemical composition,and optical transmittance of PEDOT:PSS films.The findings of the study show that the addition of V_(2)O_(5)particles changes the surface morphology of PEDOT:PSS films and promotes its superior ohmic contact with the Si interface.Furthermore,PEDOT:PSS incorporated with V_(2)O_(5)particles that have outstanding optical and semiconductor properties reduces the rate of carrier recombination at the device interface and blocks electron transport to the anode in the fabricated Si-based solar cells.When compared to conventional PEDOT:PSS/Si planar heterojunction solar cells,the fill factor,photoelectric conversion efficiency,open-circuit voltage,and short-circuit current density of the devices prepared in this study can be significantly improved,reaching up to 70.98%,15.17%,652 mV and 32.8 mA/cm^(2),respectively.This research provides a promising and effective method for improving the photoelectric conversion performance of PEDOT:PSS/Si heterojunction solar cells,which enables the application of V_(2)O_(5)in Si solar cells.
