The prediction problem of the actual value of the dynamic parameters in the simulation model in semiconductor manufacturing was discussed. Considering the fact that the default value of processing time of one certain ...The prediction problem of the actual value of the dynamic parameters in the simulation model in semiconductor manufacturing was discussed. Considering the fact that the default value of processing time of one certain equipment in the simulation model was not the same as its actual value,a general data driven prediction model of the processing time was built based on support vector regression( SVR),with the utilization of manufacturing information in manufacturing execution system( MES). The processing time of one certain equipment was highly related to the status of the equipment itself and the wafers being processed. To uncover the relationship of the processing time with the information of historical products,process flow,technical standard of silicon wafers and manual intervention,data were extracted from MES and used to build a prediction model. This model was employed on an ion implantation equipment as a case, and the effectiveness of the proposed method was shown by comparing with other approaches.展开更多
“Industry 4.0” has become the future direction of manufacturing industry. To prepare for this upgrade, it is important to study the automation of semiconductor failure analysis. In this paper, the sample polishing a...“Industry 4.0” has become the future direction of manufacturing industry. To prepare for this upgrade, it is important to study the automation of semiconductor failure analysis. In this paper, the sample polishing activity was studied for upgrading to a smart polishing process. Two major issues were identified in implementing the smart polishing process: the optimization of current polishing recipes and the capability of making decisions based on live feedback. With the help of Solver add-in, the current polishing recipes were optimized. To make decisions based on live images captured during polishing, strategies were explored based on finger polishing process study. Our investigation showed that a grey scale line profile analysis on images can be used to build the vision capability of our smart polishing system, on which a decision- making capability can be developed.展开更多
Plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished p...Plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished poly-crystalline diamond （PCD） thick films in a microwave plasma enhanced chemical vapor deposition （MPCVD） reactor, then they were processed in methane, ar- gon, hydrogen and B2H~ （0.1% diluted by H~） plasmas, respectively. Scanning electron microscopy （SEM） and atomic force microscope （AFM） results show that the surface morphology changed lit- tle during the 10 min treatment. Secondary ion mass spectroscopy （SIMS） results indicate that B2H6 plasma was efficient for increasing boron concentration in NCD films, while the carrier anal- yses demonstrates that CH4 plasma processing was effective to activate the dopants and resulted in good electrical properties.展开更多
基金National Natural Science Foundation of China(No.61034004)
文摘The prediction problem of the actual value of the dynamic parameters in the simulation model in semiconductor manufacturing was discussed. Considering the fact that the default value of processing time of one certain equipment in the simulation model was not the same as its actual value,a general data driven prediction model of the processing time was built based on support vector regression( SVR),with the utilization of manufacturing information in manufacturing execution system( MES). The processing time of one certain equipment was highly related to the status of the equipment itself and the wafers being processed. To uncover the relationship of the processing time with the information of historical products,process flow,technical standard of silicon wafers and manual intervention,data were extracted from MES and used to build a prediction model. This model was employed on an ion implantation equipment as a case, and the effectiveness of the proposed method was shown by comparing with other approaches.
文摘“Industry 4.0” has become the future direction of manufacturing industry. To prepare for this upgrade, it is important to study the automation of semiconductor failure analysis. In this paper, the sample polishing activity was studied for upgrading to a smart polishing process. Two major issues were identified in implementing the smart polishing process: the optimization of current polishing recipes and the capability of making decisions based on live feedback. With the help of Solver add-in, the current polishing recipes were optimized. To make decisions based on live images captured during polishing, strategies were explored based on finger polishing process study. Our investigation showed that a grey scale line profile analysis on images can be used to build the vision capability of our smart polishing system, on which a decision- making capability can be developed.
基金supported by the Research Fund of Hubei Provincial Department of Education of China (No.Q20081505)
文摘Plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished poly-crystalline diamond （PCD） thick films in a microwave plasma enhanced chemical vapor deposition （MPCVD） reactor, then they were processed in methane, ar- gon, hydrogen and B2H~ （0.1% diluted by H~） plasmas, respectively. Scanning electron microscopy （SEM） and atomic force microscope （AFM） results show that the surface morphology changed lit- tle during the 10 min treatment. Secondary ion mass spectroscopy （SIMS） results indicate that B2H6 plasma was efficient for increasing boron concentration in NCD films, while the carrier anal- yses demonstrates that CH4 plasma processing was effective to activate the dopants and resulted in good electrical properties.
