Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturiza...Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturization,achieving precise regionally selective doping becomes critical for building complex,highly integrated devices[2].In inorganic semiconductors(e.g.,silicon),sub-100-nanometer regional doping is achievable through photolithography and ion implantation—techniques foundational to modern complementary metaloxide-semiconductor(CMOS)technology[3].展开更多
Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully construct...Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.展开更多
Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for ...Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.展开更多
Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models...Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.展开更多
Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep...Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep understanding of the multi-field coupling behavior.This work investigates the free vibration and buckling characteristics of a PS beam under different mechanical boundary conditions.The coupling fields of a PS beam are modeled by combining the Timoshenko beam theory for mechanical fields with a high-order expansion along the beam thickness for electric fields and carrier distributions.Based on the hypothesis of small perturbation of carrier density,the governing equations and boundary conditions are derived with the principle of virtual work.The differential quadrature method(DQM)is used to solve the boundary-value problem.The analytical solutions for a simply supported-simply supported(SS)PS beam are also obtained for verification.The convergence and correctness of the solutions obtained with the DQM are first evaluated.Subsequently,the effects of initial electron density,boundary conditions,and geometric parameters on the vibration and buckling characteristics are explored through numerical examples,where the finite element simulations are also included.The interaction mechanism of multi-physics fields is revealed.The scale effect on the static and dynamic responses of a PS beam is demonstrated.The derived model and findings are useful for the analysis and design of PS-based devices.展开更多
Fiber photodetectors(FPDs)with high deformability,flexible designability,and seamless integrability with everyday textiles hold tremendous potential for the nextgeneration wearable optoelectronics.Inorganic semiconduc...Fiber photodetectors(FPDs)with high deformability,flexible designability,and seamless integrability with everyday textiles hold tremendous potential for the nextgeneration wearable optoelectronics.Inorganic semiconductors(ISCs)are considered the ideal building block to design and govern the functions of FPDs owing to their superior electrical and optical properties.Recent developments in wearable technology of ISCs,especially in fiber form factor,have driven the creation of various FPDs with smart capabilities,from light sensing,information interfacing,to sophisticated logic operating,revolutionizing human-machine interaction paradigms in many emerging fields.Herein,we present a comprehensive review of the recent progress of ISCbased FPDs.Firstly,key design principles for ISC-based FPDs are explored,encompassing material selection,fabrication technologies,device architectures,and textile integration strategies.Then,how defect engineering,alignment engineering,and heterojunction engineering of ISCs can control the optoelectronic performance of FPDs is examined.Following this,potential wearable applications of ISC-based FPDs in optical communication,image sensing,and health monitoring are analyzed.Finally,the challenges and perspectives for the design of high-performance ISC-based FPDs are outlined.展开更多
Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical cra...Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical crack under combined mechanical and electric loading,considering both central and edge cracks.Using Fourier transforms and dislocation density functions,the Mode-Ⅲproblem is converted to Cauchy-type singular integral equations.The crack surface fields,intensity factors,and energy release rate are derived.The accuracy of the proposed model is verified through the finite element(FE)simulation via COMSOL Multiphysics.The results for low electron concentrations align with those of the intrinsic piezoelectric materials,validating the correctness of the present model as well.The combined effects of crack position,applied electric loading,and initial carrier concentration on the crack propagation are analyzed.The normalized electric displacement factor shows heightened sensitivity to crack size,electromechanical loading,and carrier concentration.The crack position significantly influences the crack surface fields and normalized intensity factors due to the boundary proximity effect.展开更多
Realizing ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics.Recent experiments have reported two-dimensional(2D)room temperature ferromagnetic metals,such as monolayer Cr_...Realizing ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics.Recent experiments have reported two-dimensional(2D)room temperature ferromagnetic metals,such as monolayer Cr_(3)Te_(6).In this paper,through density functional theory(DFT)calculations,we propose a method to obtain 2D high TC ferromagnetic semiconductors through element replacement in these ferromagnetic metals.We predict that monolayer(Cr_(4/6),Mo_(2/6))_(3)Te_(6),created via element replacement in monolayer Cr_(3)Te_(6),is a room-temperature ferromagnetic semiconductor exhibiting a band gap of 0.34 eV and a TC of 384 K.Our analysis reveals that the metal-to-semiconductor transition stems from the synergistic interplay of Mo-induced lattice distortion,which resolves band overlap,and the electronic contributions of Mo dopants,which further drive the formation of a distinct band gap.The origin of the high TC is traced to strong superexchange coupling between magnetic ions,analyzed via the superexchange model with DFT and Wannier function calculations.Considering the fast developments in fabrication and manipulation of 2D materials,our theoretical results propose an approach to explore high-temperature ferromagnetic semiconductors derived from experimentally obtained 2D high-temperature ferromagnetic metals through element replacement.展开更多
Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologie...Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.展开更多
Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic a...Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot.展开更多
Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive en...Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.展开更多
Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application ...Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application of the organic semiconductor Y6-1O single crystal in photodetection devices.Firstly,Y6-1O single crystal material was prepared on a silicon substrate using solution droplet casting method.The optical properties of Y6-1O material were characterized by polarized optical microscopy,fluorescence spectroscopy,etc.,confirming its highly single crystalline performance and emission properties in the near-infrared region.Phototransistors based on Y6-1O materials with different thicknesses were then fabricated and tested.It was found that the devices exhibited good visible to near-infrared photoresponse,with the maximum photoresponse in the near-infrared region at 785 nm.The photocurrent on/off ratio reaches 10^(2),and photoresponsivity reaches 16 mA/W.It was also found that the spectral response of the device could be regulated by gate voltage as well as the material thickness,providing important conditions for optimizing the performance of near-infrared photodetectors.This study not only demonstrates the excellent performance of organic phototransistors based on Y6-1O single crystal material in near-infrared detection but also provides new ideas and directions for the future development of infrared detectors.展开更多
Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respe...Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respective diagnostic beams to carry out quality control/quality assurance tests needed to optimize patient doses in the hospital. Semiconductor detectors are used in dosimetry to verify the equipment performance and dose to patients. This work aims to assess the performance, energy dependence, and response of five commercially available semiconductor detectors in RQR, RQR-M, RQA, and RQT at Secondary Standard Dosimetry for clinical applications. The diagnostic beams were generated using Exradin A4 reference ion chamber and PTW electrometer. The ambient temperature and pressure were noted for KTP correction. The detectors designed for RQR showed good performance in RQT beams and vice versa. The detectors designed for RQR-M displayed high energy dependency in other diagnostic beams. The type of diagnostic beam quality determines the response of semiconductor detectors. Therefore, a detector should be calibrated according to the beam qualities to be measured.展开更多
All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have attracted extensive attention in photoelectric detection for their excellent photoelectric properties and stability.However,the CsPbBr_(3) quantum dot film exh...All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have attracted extensive attention in photoelectric detection for their excellent photoelectric properties and stability.However,the CsPbBr_(3) quantum dot film exhibits a high non-radiative recombination rate,and the mismatch in energy levels with the carbon electrode weakens hole extraction efficiency.These reduces the device's performance.To improve this,a semiconductor photodetector based on fluorine-doped tin oxide(FTO)/dense titanium dioxide(c-TiO_(2))/mesoporous titanium dioxide(m-TiO_(2))/CsPbBr_(3) QDs/CsPbBr_(x)I_(3-x)(x=2,1.5,1)QDs/C struc-ture was studied.By adjusting the Br-:I-ratio,the synthesized CsPbBr_(x)I_(3-x)(x=2,1.5,1)QDs showed an adjustable band gap width of 2.284-2.394 eV.And forming a typeⅡband structure with CsPbBr_(3) QDs,which reduced the valence band offset between the active layer and the carbon electrode,this promoted carrier extraction and reduced non-radiative recombination rate.Compared with the original device(the photosensitive layer is CsPbBr_(3) QDs),the performance of the photodetector based on the CsPbBr_(3) QDs/CsPbBr2I QDs heterostructure is significantly improved,the responsivity(R)increased by 73%,the specific detectivity rate(D^(*))increased from 6.98×10^(12) to 3.19×10^(13) Jones,the on/off ratio reached 106.This study provides a new idea for the development of semiconductor tandem detectors.展开更多
The effect of intermetallic particles on the corrosion of 6061 aluminum alloy and its coating used in semiconductor processing systems was systematically studied via liquid and gas experiments and micromorphology char...The effect of intermetallic particles on the corrosion of 6061 aluminum alloy and its coating used in semiconductor processing systems was systematically studied via liquid and gas experiments and micromorphology characterization.The results revealed that a huge difference of corrosion resistance between imported and domestic 6061 aluminum alloys in HCl solution and gas acid mist experiments mainly was attributed to the different size and amount of Al_(15)(Fe,Mn)_(3)Si_(2).The corrosion resistance of domestic 6061 alloy in dry/wet semiconductor electronic special gas environments was worse than that of imported aluminum alloy,and there are great differences in the corrosion mechanism of 6061 alloy caused by the second phase in the two dry/wet environments.And the corrosion resistance of the hard anodized alumina film was closely related to the microscopic morphology of holes.The vertical and elongatedα-Al_(15)(Mn,Fe)_(3)Si_(2) phase was formed in the rolled aluminum alloy that has been rolled perpendicular to the surface of the substrate.Compared to the horizontal long hole,the longitudinal long holes generated by the verticalα-Al_(15)(Mn,Fe)_(3)Si_(2) phase will enable the corrosive medium to reach the substrate rapidly,which significantly weakens the corrosion resistance of the hard anodized film.展开更多
Flexoelectricity,an electromechanical coupling between strain gradient and electrical polarization in dielectrics or semiconductors,has attracted significant scientific interest.It is reported that large flexoelectric...Flexoelectricity,an electromechanical coupling between strain gradient and electrical polarization in dielectrics or semiconductors,has attracted significant scientific interest.It is reported that large flexoelectric behaviors can be obtained at the nanoscale because of the size effect.However,the flexoelectric responses of centrosymmetric semiconductors(CSs)are extremely weak under a conventional beam-bending approach,owing to weak flexoelectric coefficients and small strain gradients.The flexoelectric-like effect is an enhanced electromechanical effect coupling the flexoelectricity and piezoelectricity.In this paper,a composite structure consisting of piezoelectric dielectric layers and a CS layer is proposed.The electromechanical response of the CS is significantly enhanced via antisymmetric piezoelectric polarization.Consequently,the cross-scale mechanically tuned carrier distribution in the semiconductor is realized.Meanwhile,the significant size dependence of the electromechanical fields in the semiconductor is demonstrated.The flexoelectronics suppression is found when the semiconductor thickness reaches a critical size(0.8μm).In addition,the first-order carrier density of the composite structure under local loads is illustrated.Our results can suggest the structural design for flexoelectric semiconductor devices.展开更多
The fracture mechanics theory posits that cracks induce strain energy concentration near their tips in structural components,generating localized flexibility that impedes crack propagation.Theoretically,cracks are rep...The fracture mechanics theory posits that cracks induce strain energy concentration near their tips in structural components,generating localized flexibility that impedes crack propagation.Theoretically,cracks are represented as dimensionless,massless spring models,effectively capturing crack characteristics and cross-sectional properties at the crack location.Leveraging this spring-based representation,this study establishes an open-crack model for a one-dimensional(1D)piezoelectric semiconductor(PSC)curved beam under dynamic loading.This model enables the investigation of vibration characteristics in cracked structures.The analytical solutions for the electromechanical fields of the beam are derived using the differential operator method,and the natural frequencies together with the corresponding generalized mode shapes of the beam are determined analytically.Furthermore,the effects of the crack parameters on the natural vibration characteristics of the PSC curved beam are analyzed.展开更多
A principle was proposed for designing a method to seal anodized aluminum used in semiconductor processing apparatuses.Thermodynamic calculations and Fick’s second law were used to reveal trends in the metal ion depo...A principle was proposed for designing a method to seal anodized aluminum used in semiconductor processing apparatuses.Thermodynamic calculations and Fick’s second law were used to reveal trends in the metal ion deposition,deposition product stability,vapor pressures of halides for selected metal ions,the holding temperature,and time.Interactions between ion concentrations and the sealing temperature were also revealed.According to the design principles,anodized aluminum dipped in 1 mM Cr^(3+)ion solution and steam-sealed for 18 h exhibited the highest corrosion resistance when exposed to 5 wt.%HCl solution and HCl gas,verifying the designed results.展开更多
Doping plays a pivotal role in enhancing the performance of organic semiconductors(OSCs)for advanced optoelectronic and thermoelectric applications.In this study,we systematically investigated the doping performance a...Doping plays a pivotal role in enhancing the performance of organic semiconductors(OSCs)for advanced optoelectronic and thermoelectric applications.In this study,we systematically investigated the doping performance and applicability of the ionic dopant 4-isopropyl-4′-methyldiphenyliodonium tetrakis(penta-fluorophenyl-borate)(DPI-TPFB)as a p-dopant for OSCs.Using the p-type OSC PBBT-2T as a model system,we demonstrated that DPI-TPFB shows significant doping effect,as confirmed by ESR spectra,ultraviolet-visible-near-infrared(UV-vis-NIR)absorption,and work function analysis,and enhances the electronic conductivity of PBBT-2T films by over four orders of magnitude.Furthermore,DPI-TPFB exhibited broad doping applicability,effectively doping various p-type OSCs and even imparting p-type characteristics to the n-type OSC N2200,transforming its intrinsic n-type behavior into p-type.The application of DPI-TPFB-doped PBBT-2T films in organic thermoelectric devices(OTEs)was also explored,achieving a power factor of approximately 10μW·m^(-1)·K^(-2).These findings highlight the potential of DPI-TPFB as a versatile and efficient dopant for integration into organic optoelectronic and thermoelectric devices.展开更多
TiO_(2)is a well-known photocatalyst with a band gap of 3.2 eV,yet its ability to absorb light is limited to the short wavelengths of ultraviolet light.To achieve a more effective photocatalytic material,we have desig...TiO_(2)is a well-known photocatalyst with a band gap of 3.2 eV,yet its ability to absorb light is limited to the short wavelengths of ultraviolet light.To achieve a more effective photocatalytic material,we have designed two-dimensional semiconductor TiOS materials using swarm intelligence algorithms combined with first-principles calculations.Three stable low-energy structures with space groups of P2_(1)/m,P3m1 and P2_(1)/c are identified.Among these structures,the Janus P3m1 phase is a direct bandgap semiconductor,while the P2_(1)/m and P2_(1)/c phases are indirect bandgap semiconductors.Utilizing the accurate hybrid density functional HSE06 method,the band gaps of the three structures are calculated to be 2.34 eV(P2_(1)/m),2.24 eV(P3m1)and 3.22 eV(P2_(1)/c).Optical calculations reveal that TiOS materials exhibit a good light-harvesting capability in both visible and ultraviolet spectral ranges.Moreover,the photocatalytic calculations also indicate that both P2_(1)/m and P3m1 TiOS can provide a strong driving force for converting H_(2)O to H_(2)and O_(2)in an acidic environment with pH=0.The structural stabilities,mechanical properties,electronic structures and hydrogen evolution reaction activities are also discussed in detail.Our research suggests that two-dimensional TiOS materials have potential applications in both semiconductor devices and photocatalysis.展开更多
文摘Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturization,achieving precise regionally selective doping becomes critical for building complex,highly integrated devices[2].In inorganic semiconductors(e.g.,silicon),sub-100-nanometer regional doping is achievable through photolithography and ion implantation—techniques foundational to modern complementary metaloxide-semiconductor(CMOS)technology[3].
文摘Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.
基金supported by the National Natural Science Foundation of China(Grant No.22175136)the State Key Laboratory of Electrical Insulation and Power Equipment(Grant No.EIPE23127)the Fundamental Research Funds for the Central Universities(xtr052024009,xtr052025002).
文摘Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.
基金Project supported by the National Natural Science Foundation of China(No.12402113)the Sichuan Science and Technology Program(No.2024NSFSC0037)。
文摘Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.
基金Project supported by the National Natural Science Foundation of China(Nos.U21A20430 and 12472155)the Natural Science Foundation of Hebei Province of China(No.A2024210002)。
文摘Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep understanding of the multi-field coupling behavior.This work investigates the free vibration and buckling characteristics of a PS beam under different mechanical boundary conditions.The coupling fields of a PS beam are modeled by combining the Timoshenko beam theory for mechanical fields with a high-order expansion along the beam thickness for electric fields and carrier distributions.Based on the hypothesis of small perturbation of carrier density,the governing equations and boundary conditions are derived with the principle of virtual work.The differential quadrature method(DQM)is used to solve the boundary-value problem.The analytical solutions for a simply supported-simply supported(SS)PS beam are also obtained for verification.The convergence and correctness of the solutions obtained with the DQM are first evaluated.Subsequently,the effects of initial electron density,boundary conditions,and geometric parameters on the vibration and buckling characteristics are explored through numerical examples,where the finite element simulations are also included.The interaction mechanism of multi-physics fields is revealed.The scale effect on the static and dynamic responses of a PS beam is demonstrated.The derived model and findings are useful for the analysis and design of PS-based devices.
基金financially supported by the National Key R&D Program of China(2023YFE0210800)National Natural Science Foundation of China(U21A2069,22305088)+4 种基金Natural Science Foundation of Hubei Province(JCZRQN202400929)Shenzhen Science and Technology Program(JCYJ20240813153403005,JCYJ20220818102215033)Guangdong Basic and Applied Basic Research Foundation(2023B1515120041)Open Research Fund of Suzhou Laboratory(SZLAB-1508-2024-ZD013)Guangdong HUST Industrial Technology Research Institute,Guangdong Provincial Key Laboratory of Manufacturing Equipment Digitization(2023B1212060012)。
文摘Fiber photodetectors(FPDs)with high deformability,flexible designability,and seamless integrability with everyday textiles hold tremendous potential for the nextgeneration wearable optoelectronics.Inorganic semiconductors(ISCs)are considered the ideal building block to design and govern the functions of FPDs owing to their superior electrical and optical properties.Recent developments in wearable technology of ISCs,especially in fiber form factor,have driven the creation of various FPDs with smart capabilities,from light sensing,information interfacing,to sophisticated logic operating,revolutionizing human-machine interaction paradigms in many emerging fields.Herein,we present a comprehensive review of the recent progress of ISCbased FPDs.Firstly,key design principles for ISC-based FPDs are explored,encompassing material selection,fabrication technologies,device architectures,and textile integration strategies.Then,how defect engineering,alignment engineering,and heterojunction engineering of ISCs can control the optoelectronic performance of FPDs is examined.Following this,potential wearable applications of ISC-based FPDs in optical communication,image sensing,and health monitoring are analyzed.Finally,the challenges and perspectives for the design of high-performance ISC-based FPDs are outlined.
基金Project supported by the Guangdong Basic and Applied Basic Research Foundation of China(Nos.2022B1515020099 and 2024A1515240026)the National Natural Science Foundation of China(No.12372147)the Fundamental Research Funds for the Central Universities of China(No.HIT.OCEF.2024019)。
文摘Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical crack under combined mechanical and electric loading,considering both central and edge cracks.Using Fourier transforms and dislocation density functions,the Mode-Ⅲproblem is converted to Cauchy-type singular integral equations.The crack surface fields,intensity factors,and energy release rate are derived.The accuracy of the proposed model is verified through the finite element(FE)simulation via COMSOL Multiphysics.The results for low electron concentrations align with those of the intrinsic piezoelectric materials,validating the correctness of the present model as well.The combined effects of crack position,applied electric loading,and initial carrier concentration on the crack propagation are analyzed.The normalized electric displacement factor shows heightened sensitivity to crack size,electromechanical loading,and carrier concentration.The crack position significantly influences the crack surface fields and normalized intensity factors due to the boundary proximity effect.
基金supported by the National Key R&D Program of China(Grant No.2022YFA1405100)Chinese Academy of Sciences Project for Young Scientists in Basic Research(Grant No.YSBR-030)+3 种基金the Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures(Grant No.JZHKYPT-2021-08)GS was supported in part by the Innovation Program for Quantum Science and Technology(Grant No.2024ZD03005)the National Natural Science Foundation of China(Grant No.12447101)Chinese Academy of Sciences.
文摘Realizing ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics.Recent experiments have reported two-dimensional(2D)room temperature ferromagnetic metals,such as monolayer Cr_(3)Te_(6).In this paper,through density functional theory(DFT)calculations,we propose a method to obtain 2D high TC ferromagnetic semiconductors through element replacement in these ferromagnetic metals.We predict that monolayer(Cr_(4/6),Mo_(2/6))_(3)Te_(6),created via element replacement in monolayer Cr_(3)Te_(6),is a room-temperature ferromagnetic semiconductor exhibiting a band gap of 0.34 eV and a TC of 384 K.Our analysis reveals that the metal-to-semiconductor transition stems from the synergistic interplay of Mo-induced lattice distortion,which resolves band overlap,and the electronic contributions of Mo dopants,which further drive the formation of a distinct band gap.The origin of the high TC is traced to strong superexchange coupling between magnetic ions,analyzed via the superexchange model with DFT and Wannier function calculations.Considering the fast developments in fabrication and manipulation of 2D materials,our theoretical results propose an approach to explore high-temperature ferromagnetic semiconductors derived from experimentally obtained 2D high-temperature ferromagnetic metals through element replacement.
基金supported by the National Natural Science Foundation of China(62374150)Natural Science Foundation of Henan(242300421216)+3 种基金C.Zheng acknowledges the support of China Postdoctoral Science Foundation(Grant No.2023TQ0296)the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20232389)Y.Xie acknowledges the support of National Natural Science Foundation of China(62074011,62134008)Beijing Outstanding Young Scientist Program(JWZQ20240102009).
文摘Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.
基金Supported by Bissell Distinguished Professor Endowment Fund at UNC-Charlotte。
文摘Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot.
基金National Natural Science Foundation of China(12002196,12102140)。
文摘Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.
基金Supported by the National Key Research and Development Program of China(2021YFB2012601)National Natural Science Foundation of China(12204109)+1 种基金Science and Technology Innovation Plan of Shanghai Science and Technology Commission(21JC1400200)Higher Education Indus⁃try Support Program of Gansu Province(2022CYZC-06)。
文摘Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application of the organic semiconductor Y6-1O single crystal in photodetection devices.Firstly,Y6-1O single crystal material was prepared on a silicon substrate using solution droplet casting method.The optical properties of Y6-1O material were characterized by polarized optical microscopy,fluorescence spectroscopy,etc.,confirming its highly single crystalline performance and emission properties in the near-infrared region.Phototransistors based on Y6-1O materials with different thicknesses were then fabricated and tested.It was found that the devices exhibited good visible to near-infrared photoresponse,with the maximum photoresponse in the near-infrared region at 785 nm.The photocurrent on/off ratio reaches 10^(2),and photoresponsivity reaches 16 mA/W.It was also found that the spectral response of the device could be regulated by gate voltage as well as the material thickness,providing important conditions for optimizing the performance of near-infrared photodetectors.This study not only demonstrates the excellent performance of organic phototransistors based on Y6-1O single crystal material in near-infrared detection but also provides new ideas and directions for the future development of infrared detectors.
文摘Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respective diagnostic beams to carry out quality control/quality assurance tests needed to optimize patient doses in the hospital. Semiconductor detectors are used in dosimetry to verify the equipment performance and dose to patients. This work aims to assess the performance, energy dependence, and response of five commercially available semiconductor detectors in RQR, RQR-M, RQA, and RQT at Secondary Standard Dosimetry for clinical applications. The diagnostic beams were generated using Exradin A4 reference ion chamber and PTW electrometer. The ambient temperature and pressure were noted for KTP correction. The detectors designed for RQR showed good performance in RQT beams and vice versa. The detectors designed for RQR-M displayed high energy dependency in other diagnostic beams. The type of diagnostic beam quality determines the response of semiconductor detectors. Therefore, a detector should be calibrated according to the beam qualities to be measured.
文摘All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have attracted extensive attention in photoelectric detection for their excellent photoelectric properties and stability.However,the CsPbBr_(3) quantum dot film exhibits a high non-radiative recombination rate,and the mismatch in energy levels with the carbon electrode weakens hole extraction efficiency.These reduces the device's performance.To improve this,a semiconductor photodetector based on fluorine-doped tin oxide(FTO)/dense titanium dioxide(c-TiO_(2))/mesoporous titanium dioxide(m-TiO_(2))/CsPbBr_(3) QDs/CsPbBr_(x)I_(3-x)(x=2,1.5,1)QDs/C struc-ture was studied.By adjusting the Br-:I-ratio,the synthesized CsPbBr_(x)I_(3-x)(x=2,1.5,1)QDs showed an adjustable band gap width of 2.284-2.394 eV.And forming a typeⅡband structure with CsPbBr_(3) QDs,which reduced the valence band offset between the active layer and the carbon electrode,this promoted carrier extraction and reduced non-radiative recombination rate.Compared with the original device(the photosensitive layer is CsPbBr_(3) QDs),the performance of the photodetector based on the CsPbBr_(3) QDs/CsPbBr2I QDs heterostructure is significantly improved,the responsivity(R)increased by 73%,the specific detectivity rate(D^(*))increased from 6.98×10^(12) to 3.19×10^(13) Jones,the on/off ratio reached 106.This study provides a new idea for the development of semiconductor tandem detectors.
基金financially supported by the Program of the National Natural Science Foundation of China(Grant No.52371055)the Young Elite Scientist Sponsorship Program Cast(Grant No.YESS20200139)the Basic Scientific Research Project of Liaoning Provincial Department of Education(Grant No.JYTMS20230618)。
文摘The effect of intermetallic particles on the corrosion of 6061 aluminum alloy and its coating used in semiconductor processing systems was systematically studied via liquid and gas experiments and micromorphology characterization.The results revealed that a huge difference of corrosion resistance between imported and domestic 6061 aluminum alloys in HCl solution and gas acid mist experiments mainly was attributed to the different size and amount of Al_(15)(Fe,Mn)_(3)Si_(2).The corrosion resistance of domestic 6061 alloy in dry/wet semiconductor electronic special gas environments was worse than that of imported aluminum alloy,and there are great differences in the corrosion mechanism of 6061 alloy caused by the second phase in the two dry/wet environments.And the corrosion resistance of the hard anodized alumina film was closely related to the microscopic morphology of holes.The vertical and elongatedα-Al_(15)(Mn,Fe)_(3)Si_(2) phase was formed in the rolled aluminum alloy that has been rolled perpendicular to the surface of the substrate.Compared to the horizontal long hole,the longitudinal long holes generated by the verticalα-Al_(15)(Mn,Fe)_(3)Si_(2) phase will enable the corrosive medium to reach the substrate rapidly,which significantly weakens the corrosion resistance of the hard anodized film.
基金supported by the National Key Research and Development Program of China(Grant No.2021YFB2011400)the National Natural Science Foundation of China(Grant No.52375081).
文摘Flexoelectricity,an electromechanical coupling between strain gradient and electrical polarization in dielectrics or semiconductors,has attracted significant scientific interest.It is reported that large flexoelectric behaviors can be obtained at the nanoscale because of the size effect.However,the flexoelectric responses of centrosymmetric semiconductors(CSs)are extremely weak under a conventional beam-bending approach,owing to weak flexoelectric coefficients and small strain gradients.The flexoelectric-like effect is an enhanced electromechanical effect coupling the flexoelectricity and piezoelectricity.In this paper,a composite structure consisting of piezoelectric dielectric layers and a CS layer is proposed.The electromechanical response of the CS is significantly enhanced via antisymmetric piezoelectric polarization.Consequently,the cross-scale mechanically tuned carrier distribution in the semiconductor is realized.Meanwhile,the significant size dependence of the electromechanical fields in the semiconductor is demonstrated.The flexoelectronics suppression is found when the semiconductor thickness reaches a critical size(0.8μm).In addition,the first-order carrier density of the composite structure under local loads is illustrated.Our results can suggest the structural design for flexoelectric semiconductor devices.
基金supported by the National Natural Science Foundation of China(No.12272353)the Postdoctoral Research Grant in Henan Province of China(No.202003091)the Key Scientific Research Projects in Colleges and Universities of Henan Province of China(No.22A130008)。
文摘The fracture mechanics theory posits that cracks induce strain energy concentration near their tips in structural components,generating localized flexibility that impedes crack propagation.Theoretically,cracks are represented as dimensionless,massless spring models,effectively capturing crack characteristics and cross-sectional properties at the crack location.Leveraging this spring-based representation,this study establishes an open-crack model for a one-dimensional(1D)piezoelectric semiconductor(PSC)curved beam under dynamic loading.This model enables the investigation of vibration characteristics in cracked structures.The analytical solutions for the electromechanical fields of the beam are derived using the differential operator method,and the natural frequencies together with the corresponding generalized mode shapes of the beam are determined analytically.Furthermore,the effects of the crack parameters on the natural vibration characteristics of the PSC curved beam are analyzed.
基金supported by the Program of the National Natural Science Foundation of China(Grant No.52371055)the Young Elite Scientist Sponsorship Program Cast(Grant No.YESS20200139)+1 种基金the Basic Scientific Research Project of Liaoning Provincial Department of Education(Grant No.JYTMS20230618)Special thanks are due to the instrumental analysis from the Analytical and Testing Centre,Northeastern University.
文摘A principle was proposed for designing a method to seal anodized aluminum used in semiconductor processing apparatuses.Thermodynamic calculations and Fick’s second law were used to reveal trends in the metal ion deposition,deposition product stability,vapor pressures of halides for selected metal ions,the holding temperature,and time.Interactions between ion concentrations and the sealing temperature were also revealed.According to the design principles,anodized aluminum dipped in 1 mM Cr^(3+)ion solution and steam-sealed for 18 h exhibited the highest corrosion resistance when exposed to 5 wt.%HCl solution and HCl gas,verifying the designed results.
基金supported by the Fundamental Research Program of Shanxi Province(Nos.202303021212159 and 202303021222190)the National Natural Science Foundation of China(No.62222403)+2 种基金the Higher Education Institutions Science and Technology Innovation Program of Shanxi Province(No.2023L160)the Scientific Research Fund of Hunan Provincial Education Department(No.23B0842)the Natural Science Foundation of Shanxi Normal University(Nos.JCYJ2024017 and JCYJ2023015)。
文摘Doping plays a pivotal role in enhancing the performance of organic semiconductors(OSCs)for advanced optoelectronic and thermoelectric applications.In this study,we systematically investigated the doping performance and applicability of the ionic dopant 4-isopropyl-4′-methyldiphenyliodonium tetrakis(penta-fluorophenyl-borate)(DPI-TPFB)as a p-dopant for OSCs.Using the p-type OSC PBBT-2T as a model system,we demonstrated that DPI-TPFB shows significant doping effect,as confirmed by ESR spectra,ultraviolet-visible-near-infrared(UV-vis-NIR)absorption,and work function analysis,and enhances the electronic conductivity of PBBT-2T films by over four orders of magnitude.Furthermore,DPI-TPFB exhibited broad doping applicability,effectively doping various p-type OSCs and even imparting p-type characteristics to the n-type OSC N2200,transforming its intrinsic n-type behavior into p-type.The application of DPI-TPFB-doped PBBT-2T films in organic thermoelectric devices(OTEs)was also explored,achieving a power factor of approximately 10μW·m^(-1)·K^(-2).These findings highlight the potential of DPI-TPFB as a versatile and efficient dopant for integration into organic optoelectronic and thermoelectric devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.52272219 and U1904612)the Natural Science Foundation of Henan Province(Grant No.242300421191).
文摘TiO_(2)is a well-known photocatalyst with a band gap of 3.2 eV,yet its ability to absorb light is limited to the short wavelengths of ultraviolet light.To achieve a more effective photocatalytic material,we have designed two-dimensional semiconductor TiOS materials using swarm intelligence algorithms combined with first-principles calculations.Three stable low-energy structures with space groups of P2_(1)/m,P3m1 and P2_(1)/c are identified.Among these structures,the Janus P3m1 phase is a direct bandgap semiconductor,while the P2_(1)/m and P2_(1)/c phases are indirect bandgap semiconductors.Utilizing the accurate hybrid density functional HSE06 method,the band gaps of the three structures are calculated to be 2.34 eV(P2_(1)/m),2.24 eV(P3m1)and 3.22 eV(P2_(1)/c).Optical calculations reveal that TiOS materials exhibit a good light-harvesting capability in both visible and ultraviolet spectral ranges.Moreover,the photocatalytic calculations also indicate that both P2_(1)/m and P3m1 TiOS can provide a strong driving force for converting H_(2)O to H_(2)and O_(2)in an acidic environment with pH=0.The structural stabilities,mechanical properties,electronic structures and hydrogen evolution reaction activities are also discussed in detail.Our research suggests that two-dimensional TiOS materials have potential applications in both semiconductor devices and photocatalysis.
