Intrinsic zinc oxide films, normally deposited by radio frequency （RF） sputtering, are fabricated by direct current （DC） sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible ...Intrinsic zinc oxide films, normally deposited by radio frequency （RF） sputtering, are fabricated by direct current （DC） sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu （ln, Ga） Se2 （CIGS） solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.展开更多
Molybdenum （Mo） thin films, most commonly used as electrical back contacts in Cu（In, Ga）Se2 （CIGS） solar cells, are deposited by rf and dc magnetron sputtering in identical systems to study the discrepancy and g...Molybdenum （Mo） thin films, most commonly used as electrical back contacts in Cu（In, Ga）Se2 （CIGS） solar cells, are deposited by rf and dc magnetron sputtering in identical systems to study the discrepancy and growth mechanisms of the two sputtering techniques. The results reveal that though different techniques generally de- posit films with different characteristic properties, Mo films with similar structural and physical properties can be obtained at respective suitable deposition conditions. Highly adhesive and conductive Mo films on soda lime glass are further optimized, and the as-fabricated solar cells reach efficiencies as high as 9.4% and 9.1% without an antireflective laver.展开更多
基金supported by the National "973" Program of China(Nos.2007CB936704 and 2009CB939903)the Natural Science Foundation of Shanghai,China(No.11ZR1441900)the Science and Technology Commission of Shanghai,China(Nos.10520706700 and 0952nm06500)
文摘Intrinsic zinc oxide films, normally deposited by radio frequency （RF） sputtering, are fabricated by direct current （DC） sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu （ln, Ga） Se2 （CIGS） solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.
基金supported by the National Natural Science Foundation of China under Grant No.11274328
文摘Molybdenum （Mo） thin films, most commonly used as electrical back contacts in Cu（In, Ga）Se2 （CIGS） solar cells, are deposited by rf and dc magnetron sputtering in identical systems to study the discrepancy and growth mechanisms of the two sputtering techniques. The results reveal that though different techniques generally de- posit films with different characteristic properties, Mo films with similar structural and physical properties can be obtained at respective suitable deposition conditions. Highly adhesive and conductive Mo films on soda lime glass are further optimized, and the as-fabricated solar cells reach efficiencies as high as 9.4% and 9.1% without an antireflective laver.
