Due to the highly porous structure,large specific surface area,and 3 D interconnected metal conductive network,nanoporous metal foams have attracted a lot of attention in the field of energy conversion and storage,esp...Due to the highly porous structure,large specific surface area,and 3 D interconnected metal conductive network,nanoporous metal foams have attracted a lot of attention in the field of energy conversion and storage,especially lithium-ion batteries,which are ideal for current collectors.In this work,we develop a facile approach to fabricate core-shell Ni3Se2/Ni nanofoams composites.The Ni3Se2/Ni composites make full use of both the advantages of metal conductive network and core-shell structure,resulting in a high capacity and superior rate performance.In addition,the composites can be directly converted into electrode by a simple mechanical compression,which is more convenient than traditional casting method.What’s more,this material and its structure can be extended to other devices in the field of energy conversion and storage.展开更多
Reducing the manufacturing cost of solar cells is necessary to their industrial production. Electrodepositing is an effective, non-vacuum method which is very suitable for cutting the manufacturing cost of thin films ...Reducing the manufacturing cost of solar cells is necessary to their industrial production. Electrodepositing is an effective, non-vacuum method which is very suitable for cutting the manufacturing cost of thin films as well as developing its large-scale industrial production. In this study, about 1-μm-thick Cu（In,Ga）Se2（CIGS） precursors were electrodeposited on Mo/glass substrates in aqueous solution utilizing a three-electrode potentiostatic system.Triethanolamine was used as complexing agent, and all parameters of electrodeposition were precisely controlled.After that, the electrodeposited precursors were selenized in a Se atmosphere with different heating ramp rates（60 and 600℃·min^（-1））. High-quality CIGS films were obtained, and their characteristics were investigated by X-ray fluorescence, scanning electron microscopy, energydispersive spectroscopy, X-ray diffraction, Raman spectra and near-infrared-visible（NIR-Vis） spectra. The results reveal that there are many differences between the properties of the films under different heating rates. Finally,CIGS solar cells were fabricated using a fast and a slow heating rate. The maximum efficiencies achieved for the films selenized at 60 and 600℃-min^（-1） are 3.15% and 0.71%, respectively.展开更多
In this article, we discuss the leading thin-film photovoltaic （PV） technology based on the Cu（ln,Ga）Se2 （CIGS） compound semiconductor. This contribution includes a general comparison with the conventional Si-wa...In this article, we discuss the leading thin-film photovoltaic （PV） technology based on the Cu（ln,Ga）Se2 （CIGS） compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation.展开更多
This paper reviews the development history of alkali element doping on Cu（In,Ga）Se2 （CIGS） solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strat...This paper reviews the development history of alkali element doping on Cu（In,Ga）Se2 （CIGS） solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIG5 absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride （NaF and KF） post-deposition treatment （PDT）, we discuss and interpret the following issues： ① The delamination of CIGS thin films induced by Na incorporation facilitates CulnSe2 formation and inhibits Ga during low-temperature co-evaporation process- es. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss, This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect （Cd^＋Cu） density, which is transferred from the acceptor defect （C^-cu） and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.展开更多
We have successfully synthesized two novel compounds[A6Cl][Fe24Se26](A=K,Rb).The key structural units of them are FeSe octamers,consisting of edge-shared FeSe4 tetrahedra.Two kinds of FeSe octamer layers with differen...We have successfully synthesized two novel compounds[A6Cl][Fe24Se26](A=K,Rb).The key structural units of them are FeSe octamers,consisting of edge-shared FeSe4 tetrahedra.Two kinds of FeSe octamer layers with different connection configurations stack along the c axis,forming a three-dimensional(3D)TiAl3-type structure.Interestingly,the 3D structural topology of these ocatmers in one unit cell is similar to the local atomic arrangement of themselves,i.e.,self-similarity in structure.Physical property characterizations indicate that both the compounds exhibit insulating antiferromagnetism with Neel temperatures Tn^110K and 75K for[K6Cl][Fe24Se26]and[Rb6Cl][Fe24Se26].展开更多
In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with t...In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.展开更多
In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of su...In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of subcells on Cu(Inx,Ga1-x)Se2(CIGS)modules.In this way,we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished.Specifically,by analyzing the standard P1 patterning line ablated before the CIGS deposition,we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath.We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope(SEM)cross-section,where a reduction of the photoemission cannot be explained by a thickness variation.We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS.We then document,for the first time,the existence of a short-range damaged area,which is independent of the application of an optical aperture on the laser path.Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.展开更多
分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In_2Se_3/CuSe粉体,研究不同方法制备In_2Se_3/CuSe粉体的物相、形貌,并利用涂覆–快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组...分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In_2Se_3/CuSe粉体,研究不同方法制备In_2Se_3/CuSe粉体的物相、形貌,并利用涂覆–快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组成进行了表征。结果表明:超声微波溶剂热法和常压溶剂热法得到的产物是以In_2Se_3+CuSe混合相的形式存在,高压溶剂热法合成的In_2Se_3/CuSe粉体则呈核壳结构,(以In_2Se_3为核,CuSe为壳)。涂覆–快速热处理法制备CIS薄膜的FESEM照片结果表明,高压溶剂热法合成的In_2Se_3/CuSe更容易获得平整致密的薄膜。将该CIS薄膜直接用于电池器件的组装,获得的光电性能参数:Voc为50 m V,Jsc为8 m A/cm^2。展开更多
基金financially supported by the Promotion Program for Young and Middle-aged Teacher in Science and Technology Research of Huaqiao University(ZQN-PY608)the Fujian Provincial Natural Science Foundation of China(No.2017J05008)the National Natural Science Foundation of China(No.11704071).
文摘Due to the highly porous structure,large specific surface area,and 3 D interconnected metal conductive network,nanoporous metal foams have attracted a lot of attention in the field of energy conversion and storage,especially lithium-ion batteries,which are ideal for current collectors.In this work,we develop a facile approach to fabricate core-shell Ni3Se2/Ni nanofoams composites.The Ni3Se2/Ni composites make full use of both the advantages of metal conductive network and core-shell structure,resulting in a high capacity and superior rate performance.In addition,the composites can be directly converted into electrode by a simple mechanical compression,which is more convenient than traditional casting method.What’s more,this material and its structure can be extended to other devices in the field of energy conversion and storage.
基金financially supported by the National High Technology Research and Development Program of China(No.2015AA034201)the National Natural Science Foundation of China(No.11474355)the Chinese Universities Scientific Fund(No.2017LX002)
文摘Reducing the manufacturing cost of solar cells is necessary to their industrial production. Electrodepositing is an effective, non-vacuum method which is very suitable for cutting the manufacturing cost of thin films as well as developing its large-scale industrial production. In this study, about 1-μm-thick Cu（In,Ga）Se2（CIGS） precursors were electrodeposited on Mo/glass substrates in aqueous solution utilizing a three-electrode potentiostatic system.Triethanolamine was used as complexing agent, and all parameters of electrodeposition were precisely controlled.After that, the electrodeposited precursors were selenized in a Se atmosphere with different heating ramp rates（60 and 600℃·min^（-1））. High-quality CIGS films were obtained, and their characteristics were investigated by X-ray fluorescence, scanning electron microscopy, energydispersive spectroscopy, X-ray diffraction, Raman spectra and near-infrared-visible（NIR-Vis） spectra. The results reveal that there are many differences between the properties of the films under different heating rates. Finally,CIGS solar cells were fabricated using a fast and a slow heating rate. The maximum efficiencies achieved for the films selenized at 60 and 600℃-min^（-1） are 3.15% and 0.71%, respectively.
基金funding by the German Federal Ministry for Economic Affairs and Energy (BMWi)the German Federal Ministry of Education and Research (BMBF)+1 种基金the German State of Baden-Württembergthe European Union
文摘In this article, we discuss the leading thin-film photovoltaic （PV） technology based on the Cu（ln,Ga）Se2 （CIGS） compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation.
文摘This paper reviews the development history of alkali element doping on Cu（In,Ga）Se2 （CIGS） solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIG5 absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride （NaF and KF） post-deposition treatment （PDT）, we discuss and interpret the following issues： ① The delamination of CIGS thin films induced by Na incorporation facilitates CulnSe2 formation and inhibits Ga during low-temperature co-evaporation process- es. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss, This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect （Cd^＋Cu） density, which is transferred from the acceptor defect （C^-cu） and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.
基金the National Key R&D Program of China under Grant No.2016YFA0300504the National Natural Science Foundation of China(Nos.11574394,11774423,11822412)the Fundamental Research Funds for the Central Universities,and the Research Funds of Renmin University of China(RUC)(15XNLQ07,18XNLG14,19XNLG17).
文摘We have successfully synthesized two novel compounds[A6Cl][Fe24Se26](A=K,Rb).The key structural units of them are FeSe octamers,consisting of edge-shared FeSe4 tetrahedra.Two kinds of FeSe octamer layers with different connection configurations stack along the c axis,forming a three-dimensional(3D)TiAl3-type structure.Interestingly,the 3D structural topology of these ocatmers in one unit cell is similar to the local atomic arrangement of themselves,i.e.,self-similarity in structure.Physical property characterizations indicate that both the compounds exhibit insulating antiferromagnetism with Neel temperatures Tn^110K and 75K for[K6Cl][Fe24Se26]and[Rb6Cl][Fe24Se26].
基金supported by Korea Research Institute of Standards and Science(KRISS–2019–GP2019-0014)。
文摘In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.
基金the DFG research training group GRK 1896 at Erlangen University and from the Joint Project Helmholtz-Institute Erlangen-Nürnberg(HI-ERN)for Renewable Energy Production under Project DBF01253,respectivelyfinancial support through the“Aufbruch Bayern”initiative of the state of Bavaria(EnCN and Solar Factory of the Future)and the“Solar Factory of the Future”with the Energy Campus Nürnberg(EnCN).
文摘In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of subcells on Cu(Inx,Ga1-x)Se2(CIGS)modules.In this way,we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished.Specifically,by analyzing the standard P1 patterning line ablated before the CIGS deposition,we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath.We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope(SEM)cross-section,where a reduction of the photoemission cannot be explained by a thickness variation.We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS.We then document,for the first time,the existence of a short-range damaged area,which is independent of the application of an optical aperture on the laser path.Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.
文摘分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In_2Se_3/CuSe粉体,研究不同方法制备In_2Se_3/CuSe粉体的物相、形貌,并利用涂覆–快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组成进行了表征。结果表明:超声微波溶剂热法和常压溶剂热法得到的产物是以In_2Se_3+CuSe混合相的形式存在,高压溶剂热法合成的In_2Se_3/CuSe粉体则呈核壳结构,(以In_2Se_3为核,CuSe为壳)。涂覆–快速热处理法制备CIS薄膜的FESEM照片结果表明,高压溶剂热法合成的In_2Se_3/CuSe更容易获得平整致密的薄膜。将该CIS薄膜直接用于电池器件的组装,获得的光电性能参数:Voc为50 m V,Jsc为8 m A/cm^2。
