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Effect of Screw-Dislocation on Electrical Properties of Spiral-Type Bi2Se3 Nanoplates
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作者 Yu-kun Wu A-wei Zhuang +3 位作者 Chun-miao Ye Jie Zeng Nan Pan Xiao-ping Wang 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2016年第6期687-692,I0001,共7页
We systematically investigated the electrical nanoplates through field effect transistor and properties of spiral-type and smooth Bi2Se3 conductive atomic force microscopy (CAFM) measurement. It is observed that bot... We systematically investigated the electrical nanoplates through field effect transistor and properties of spiral-type and smooth Bi2Se3 conductive atomic force microscopy (CAFM) measurement. It is observed that both nanoplates possess high conductivity and show metallic-like behavior. Compared to the smooth nanoplate, the spiral-type one exhibits the higher carrier concentration and lower mobility. CAFM characterization reveals that the conductance at the screw-dislocation edge is even higher than that on the terrace, implying that the dislocation can supply excess carriers to compensate the low mobility and achieve high conductivity. The unique structure and electrical properties make the spiral-type Bi2 Se3 nanoplates a good candidate for catalysts and gas sensors. 展开更多
关键词 Bi2Se3 nanoplates screw-dislocation Electrical properties Field effect tran-sistor Conductive atomic force microscopy
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