Bacterial infections are one of the greatest threats to wound healing,and microbial resistance has increased the demand for new antimicrobial dressings.Artificial nanozymes possess myriad considerable advantages,inclu...Bacterial infections are one of the greatest threats to wound healing,and microbial resistance has increased the demand for new antimicrobial dressings.Artificial nanozymes possess myriad considerable advantages,including low cost and high activity,for targeted biological treatments.Despite significant efforts made in nanozyme engineering,significant challenge remains that their catalytic performance is far from satisfactory in wound treatment.Herein,based on biowaste valorisation,we propose a sustainable and efficient strategy to synthesize an ultrafine-Mn-loaded(3.0±1 nm)N,O-doped porous nanocarbons(Mn-PNCs)nanozyme via the Mott−Schottky effect.The nanozyme achieves mid-temperature(45.8℃)and superior photothermal conversion efficiency(77.62%),photothermally enhanced peroxidase-like activity that contributes to the effective treatment of methicillin-resistant Staphylococcus aureus-infected wounds.The photo-enzyme platform further reduced the inflammatory response,normalized epidermal tissue regeneration,and accelerated wound healing.Notably,the mechanism demonstrated that this Mott−Schottky catalyst can trigger the rapid transfer of electrons to release reactive oxygen species(ROS)species,as a heterojunction system is strongly capable of changing the electron density within the metal.Under photothermal induction,the Mott–Schottky contact can be used to fabricate other polysaccharide-derived nanozymes in tissue engineering,or on the high-value application of biomass resources.展开更多
Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the i...Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.展开更多
Poly(phenylene vinylene) (PPV) him was synthesized via a soluble precursor polymer. Strong fluorescence at 500-600 nm was observed in both precursor and PPV him. Room-temperature conductivity of PPV him doped with FeC...Poly(phenylene vinylene) (PPV) him was synthesized via a soluble precursor polymer. Strong fluorescence at 500-600 nm was observed in both precursor and PPV him. Room-temperature conductivity of PPV him doped with FeCl3 depends on the elimination temperature, the concentration of FeCl3 and doping time. The maximum conductivity of doped PPV at room-temperature can reach about 40 S . cm(-1). The temperature dependence of conductivity was controlled by 1D-VRH (1 Dimension Variable Range Hopping) model with T-0 value of 3.9 x 10(3) K. Non-Ohmic conductivity resulting from Schottky effect was observed and the value of converted voltage from Ohmic region into non-Ohmic region at the current-voltage characteristic was found to be dependent upon the work function of electrodes.展开更多
The analytical description of the trap signature in the charge conduction process of turmeric dye-based organic semiconductor has been presented in this study.An analytical explanation of the built-in potential Ⅴx-Ⅴ...The analytical description of the trap signature in the charge conduction process of turmeric dye-based organic semiconductor has been presented in this study.An analytical explanation of the built-in potential Ⅴx-Ⅴ graph that emphasizes the presence of trapping states has been provided.Differential analysis of current-voltage(Ⅰ-Ⅴ)characteristics has also been conducted to verify the trap signature of the carrier in the device.The non-monotonous decrement of the G(Ⅴ)-Ⅴ plot verifies the trap signature.The values of trap energy(Et)and trap factor(θ)have been derived from the logarithmic Ⅰ-Ⅴ relationship.From the analysis of the semilogarithmic Ⅰ-Ⅴ plot,the barrier height(ϕbi)of the device has also been determined.The overallⅠ-Ⅴcurve has been taken into account to examine the Richardson-Schottky and Poole-Frenkel effects on the trap-assisted charge conduction process.From the results of the experiment,the Schottky effect has been observed to be effective,which leads to a bulk-limited charge conduction process.展开更多
We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used...We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 gA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel arra36 the yield of functioning transistors is dramatically increased and device- to-device variability is reduced compared to single devices. This new nanowire- based platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes （LEDs）, while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.展开更多
Developing efficient electrocatalysts for selective nitrate contamination reduction into value-added ammonia is significant.Here,heterostructured Co/CoO nanosheet arrays(Co/CoO NSAs)exhibited excellent Faradaic effici...Developing efficient electrocatalysts for selective nitrate contamination reduction into value-added ammonia is significant.Here,heterostructured Co/CoO nanosheet arrays(Co/CoO NSAs)exhibited excellent Faradaic efficiency(93.8%)and selectivity(91.2%)for nitrate electroreduction to ammonia,greatly outperforming Co NSAs.15N isotope labeling experiments and 1H nuclear magnetic resonance(NMR)quantitative testing methods confirmed the origin of the produced ammonia.Electrochemical in situ Fourier transform infrared(FTIR)spectroscopy,online differential electrochemical mass spectrometry(DEMS)data and density functional theory(DFT)results revealed that the superior performances arose from the electron deficiency of Co induced by the rectifying Schottky contact in the Co/CoO heterostructures.The electron transfer from Co to CoO at the interface could not only suppress the competitive hydrogen evolution reaction,but also increase energy barriers for by-products,thus leading to high Faradaic efficiency and selectivity of ammonia.展开更多
The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights（BH） of as-deposited and 200 ℃ annealed SBDs are 0.80 eV（I-V）/0....The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights（BH） of as-deposited and 200 ℃ annealed SBDs are 0.80 eV（I-V）/0.93 eV（C-V） and 0.87 eV（I-V）/1.03 eV（C-V）. However, the BH rises to 0.99 eV（I-V）/1.18 eV（C-V）and then slightly deceases to 0.92 eV（I-V）/1.03 eV（C-V） after annealing at 300 ℃ and 400 ℃. The utmost BH is attained after annealing at 300 ℃ and thus the optimum annealing for SBD is 300 ℃. By applying Cheung＇s functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung＇s and ΨS-V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the NSS decreases up to 300 ℃ annealing and then slightly increases after annealing at 400 ℃. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.展开更多
By means of analyzing theⅠ-Ⅴcharacteristic curve of NiSi/n-Si Schottkyjunction diodes（NiSi/n-Si SJDs）, abstracting the effective Schottky barrier height（φ_（B,eff）） and the idealfactor ofNiSi/n-Si SJDs and mea...By means of analyzing theⅠ-Ⅴcharacteristic curve of NiSi/n-Si Schottkyjunction diodes（NiSi/n-Si SJDs）, abstracting the effective Schottky barrier height（φ_（B,eff）） and the idealfactor ofNiSi/n-Si SJDs and measuring the sheet resistance of NiSi films（R_（NiSi））,we study the effects of different dopant segregation process parameters,including impurity implantation dose,segregation annealing temperature and segregation annealing time,on theφ_（B,eff） of NiSi/ n-Si SJDs and the resistance characteristic of NiSi films.In addition,the changing rules ofφ_（B,eff） and R_（NiSi） are discussed.展开更多
基金supported by Research Funding of Wuhan Polytechnic University(2023RZ019)the Young Top-Notch Talent Cultivation Program of Hubei Province,the Wuhan Science and Technology Bureau(2022020801010389)+2 种基金the National Natural Science Foundation of China(51973166)the Key Research and Development Program of Hubei Province(2020BCA079)the Beijing Natural Science Foundation(L248026).
文摘Bacterial infections are one of the greatest threats to wound healing,and microbial resistance has increased the demand for new antimicrobial dressings.Artificial nanozymes possess myriad considerable advantages,including low cost and high activity,for targeted biological treatments.Despite significant efforts made in nanozyme engineering,significant challenge remains that their catalytic performance is far from satisfactory in wound treatment.Herein,based on biowaste valorisation,we propose a sustainable and efficient strategy to synthesize an ultrafine-Mn-loaded(3.0±1 nm)N,O-doped porous nanocarbons(Mn-PNCs)nanozyme via the Mott−Schottky effect.The nanozyme achieves mid-temperature(45.8℃)and superior photothermal conversion efficiency(77.62%),photothermally enhanced peroxidase-like activity that contributes to the effective treatment of methicillin-resistant Staphylococcus aureus-infected wounds.The photo-enzyme platform further reduced the inflammatory response,normalized epidermal tissue regeneration,and accelerated wound healing.Notably,the mechanism demonstrated that this Mott−Schottky catalyst can trigger the rapid transfer of electrons to release reactive oxygen species(ROS)species,as a heterojunction system is strongly capable of changing the electron density within the metal.Under photothermal induction,the Mott–Schottky contact can be used to fabricate other polysaccharide-derived nanozymes in tissue engineering,or on the high-value application of biomass resources.
文摘Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.
基金This research was financially supported by the National Natural Science Foundation of China and the Chinese Academy of Sciences
文摘Poly(phenylene vinylene) (PPV) him was synthesized via a soluble precursor polymer. Strong fluorescence at 500-600 nm was observed in both precursor and PPV him. Room-temperature conductivity of PPV him doped with FeCl3 depends on the elimination temperature, the concentration of FeCl3 and doping time. The maximum conductivity of doped PPV at room-temperature can reach about 40 S . cm(-1). The temperature dependence of conductivity was controlled by 1D-VRH (1 Dimension Variable Range Hopping) model with T-0 value of 3.9 x 10(3) K. Non-Ohmic conductivity resulting from Schottky effect was observed and the value of converted voltage from Ohmic region into non-Ohmic region at the current-voltage characteristic was found to be dependent upon the work function of electrodes.
文摘The analytical description of the trap signature in the charge conduction process of turmeric dye-based organic semiconductor has been presented in this study.An analytical explanation of the built-in potential Ⅴx-Ⅴ graph that emphasizes the presence of trapping states has been provided.Differential analysis of current-voltage(Ⅰ-Ⅴ)characteristics has also been conducted to verify the trap signature of the carrier in the device.The non-monotonous decrement of the G(Ⅴ)-Ⅴ plot verifies the trap signature.The values of trap energy(Et)and trap factor(θ)have been derived from the logarithmic Ⅰ-Ⅴ relationship.From the analysis of the semilogarithmic Ⅰ-Ⅴ plot,the barrier height(ϕbi)of the device has also been determined.The overallⅠ-Ⅴcurve has been taken into account to examine the Richardson-Schottky and Poole-Frenkel effects on the trap-assisted charge conduction process.From the results of the experiment,the Schottky effect has been observed to be effective,which leads to a bulk-limited charge conduction process.
文摘We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 gA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel arra36 the yield of functioning transistors is dramatically increased and device- to-device variability is reduced compared to single devices. This new nanowire- based platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes （LEDs）, while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.
基金supported by the National Natural Science Foundation of China(21871206,21701122)。
文摘Developing efficient electrocatalysts for selective nitrate contamination reduction into value-added ammonia is significant.Here,heterostructured Co/CoO nanosheet arrays(Co/CoO NSAs)exhibited excellent Faradaic efficiency(93.8%)and selectivity(91.2%)for nitrate electroreduction to ammonia,greatly outperforming Co NSAs.15N isotope labeling experiments and 1H nuclear magnetic resonance(NMR)quantitative testing methods confirmed the origin of the produced ammonia.Electrochemical in situ Fourier transform infrared(FTIR)spectroscopy,online differential electrochemical mass spectrometry(DEMS)data and density functional theory(DFT)results revealed that the superior performances arose from the electron deficiency of Co induced by the rectifying Schottky contact in the Co/CoO heterostructures.The electron transfer from Co to CoO at the interface could not only suppress the competitive hydrogen evolution reaction,but also increase energy barriers for by-products,thus leading to high Faradaic efficiency and selectivity of ammonia.
文摘The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights（BH） of as-deposited and 200 ℃ annealed SBDs are 0.80 eV（I-V）/0.93 eV（C-V） and 0.87 eV（I-V）/1.03 eV（C-V）. However, the BH rises to 0.99 eV（I-V）/1.18 eV（C-V）and then slightly deceases to 0.92 eV（I-V）/1.03 eV（C-V） after annealing at 300 ℃ and 400 ℃. The utmost BH is attained after annealing at 300 ℃ and thus the optimum annealing for SBD is 300 ℃. By applying Cheung＇s functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung＇s and ΨS-V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the NSS decreases up to 300 ℃ annealing and then slightly increases after annealing at 400 ℃. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.
文摘By means of analyzing theⅠ-Ⅴcharacteristic curve of NiSi/n-Si Schottkyjunction diodes（NiSi/n-Si SJDs）, abstracting the effective Schottky barrier height（φ_（B,eff）） and the idealfactor ofNiSi/n-Si SJDs and measuring the sheet resistance of NiSi films（R_（NiSi））,we study the effects of different dopant segregation process parameters,including impurity implantation dose,segregation annealing temperature and segregation annealing time,on theφ_（B,eff） of NiSi/ n-Si SJDs and the resistance characteristic of NiSi films.In addition,the changing rules ofφ_（B,eff） and R_（NiSi） are discussed.
