The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin f...The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb6 Te4/VO2 has a broader energy band of 1.58 eV and better data retention （125℃ for 103/）. The crystallization is suppressed by the multilayer interfaces in Sbf Te4/VO2 thin film with a smaller rms surface roughness for Sbf Te4/VO2 than monolayer Sb4Te6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb6Te4 （2nm）/VO2 （8nm） thin film. The Sb6 Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.展开更多
A new compound 2 6[Co(H 2O) 2(VO) 8(OH) 4(PO 4) 8] has been hydrothermally synthesized. Single crystal X-ray analysis indicates that this compound crystallizes in a monoclinic system, space group P2 1/n with a=1.438 5...A new compound 2 6[Co(H 2O) 2(VO) 8(OH) 4(PO 4) 8] has been hydrothermally synthesized. Single crystal X-ray analysis indicates that this compound crystallizes in a monoclinic system, space group P2 1/n with a=1.438 5(3) nm, b=1.012 2(2) nm, c=1.832 5(4) nm, β=90.21°, V=2\^668 2(9) nm 3, Z=2, D c=2.112 g/cm 3, R=0.055, wR=0.149 7, S=1.037. The structure of 2 6[Co(H 2O) 2(VO) 8(OH) 4(PO 4) 8] is characterized by P-V-O layers constructed by [(VO) 4(OH) 2(PO 4) 4] 6- non-symmetric units. The P-V-O layers are pillared by [Co(H 2O) 2] 2+ group, resulting in the channels within which the protonated diaminoethane and H 3O + are located.展开更多
Normal photocatalysts cannot effectively remove low-concentration NO because of the high recombination rate of the photogenerated carriers.To overcome this problem,S-scheme composites have been developed to fabricate ...Normal photocatalysts cannot effectively remove low-concentration NO because of the high recombination rate of the photogenerated carriers.To overcome this problem,S-scheme composites have been developed to fabricate photocatalysts.Herein,a novel S-scheme Sb2WO6/g-C3N4 nanocomposite was fabricated by an ultrasound-assisted method,which exhibited excellent performance for photocatalytic ppb-level NO removal.Compared with the pure constituents of the nanocomposite,the as-prepared 15%-Sb2WO6/g-C3N4 photocatalyst could remove more than 68%continuous-flowing NO(initial concentration:400 ppb)under visible-light irradiation in 30 min.The findings of the trapping experiments confirmed that•O2^–and h+were the important active species in the NO oxidation reaction.Meanwhile,the transient photocurrent response and PL spectroscopy analyses proved that the unique S-scheme structure of the samples could enhance the charge separation efficiency.In situ DRIFTS revealed that the photocatalytic reaction pathway of NO removal over the Sb2WO6/g-C3N4 nanocomposite occurred via an oxygen-induced route.The present work proposes a new concept for fabricating efficient photocatalysts for photocatalytic ppb-level NO oxidation and provides deeper insights into the mechanism of photocatalytic NO oxidation.展开更多
Phase transformations in a Ge1Sb2Te4 system induced by a single femtosecond laser exposure were investigated. The system has a multilayer structure of air/10 nm ZnS–SiO2/80 nm Ge1Sb2Te4/80 nm ZnS–SiO2/0.6 mm polycar...Phase transformations in a Ge1Sb2Te4 system induced by a single femtosecond laser exposure were investigated. The system has a multilayer structure of air/10 nm ZnS–SiO2/80 nm Ge1Sb2Te4/80 nm ZnS–SiO2/0.6 mm polycarbonate substrate. The morphology and contrast of marks written in both amorphous and crystalline backgrounds by single femtosecond pulses were characterized using an optical microscope. X-ray diffraction (XRD) was applied to identify the crystal structures transformed by single 108 fs shots. The characteristics and the conditions of phase transitions in the multilayer structure triggered by single shots were investigated. The pulse energy window for the crystallization in the Ge1Sb2Te4 system was established. The mechanism of phase change triggered by 108 fs laser pulses was discussed.展开更多
Metasurfaces have emerged as a flexible platform for shaping the electromagnetic field via the tailoring phase,amplitude,and polarization at will.However,the chromatic aberration inherited from building blocks’diffra...Metasurfaces have emerged as a flexible platform for shaping the electromagnetic field via the tailoring phase,amplitude,and polarization at will.However,the chromatic aberration inherited from building blocks’diffractive nature plagues them when used in many practical applications.Current solutions for eliminating chromatic aberration usually rely on searching through many meta-atoms to seek designs that satisfy both phase and phase dispersion preconditions,inevitably leading to intensive design efforts.Moreover,most schemes are commonly valid for incidence with a specific spin state.Here,inspired by the Rayleigh criterion for spot resolution,we present a design principle for broadband achromatic and polarization-insensitive metalenses using two sets of anisotropic nanofins based on phase change material Ge2Sb2Se4Te1.By limiting the rotation angles of all nanofins to either 0 deg or 90 deg,the metalens with a suitable numerical aperture constructed by this fashion allows for achromatic and polarization-insensitive performance across the wavelength range of 4–5μm,while maintaining high focusing efficiency and diffraction-limited performance.We also demonstrate the versatility of our approach by successfully implementing the generation of broadband achromatic and polarization-insensitive focusing optical vortex.This work represents a major advance in achromatic metalenses and may find more applications in compact and chip-scale devices.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 11774438the Natural Science Foundation of Jiangsu Province under Grant No BK20151172+2 种基金the Qing Lan Project,the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Chinese Academy of Sciencesthe Postgraduate Research and Practice Innovation Program of Jiangsu Province under Grant No SJCX18_1024
文摘The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb6 Te4/VO2 has a broader energy band of 1.58 eV and better data retention （125℃ for 103/）. The crystallization is suppressed by the multilayer interfaces in Sbf Te4/VO2 thin film with a smaller rms surface roughness for Sbf Te4/VO2 than monolayer Sb4Te6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb6Te4 （2nm）/VO2 （8nm） thin film. The Sb6 Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.
文摘A new compound 2 6[Co(H 2O) 2(VO) 8(OH) 4(PO 4) 8] has been hydrothermally synthesized. Single crystal X-ray analysis indicates that this compound crystallizes in a monoclinic system, space group P2 1/n with a=1.438 5(3) nm, b=1.012 2(2) nm, c=1.832 5(4) nm, β=90.21°, V=2\^668 2(9) nm 3, Z=2, D c=2.112 g/cm 3, R=0.055, wR=0.149 7, S=1.037. The structure of 2 6[Co(H 2O) 2(VO) 8(OH) 4(PO 4) 8] is characterized by P-V-O layers constructed by [(VO) 4(OH) 2(PO 4) 4] 6- non-symmetric units. The P-V-O layers are pillared by [Co(H 2O) 2] 2+ group, resulting in the channels within which the protonated diaminoethane and H 3O + are located.
文摘Normal photocatalysts cannot effectively remove low-concentration NO because of the high recombination rate of the photogenerated carriers.To overcome this problem,S-scheme composites have been developed to fabricate photocatalysts.Herein,a novel S-scheme Sb2WO6/g-C3N4 nanocomposite was fabricated by an ultrasound-assisted method,which exhibited excellent performance for photocatalytic ppb-level NO removal.Compared with the pure constituents of the nanocomposite,the as-prepared 15%-Sb2WO6/g-C3N4 photocatalyst could remove more than 68%continuous-flowing NO(initial concentration:400 ppb)under visible-light irradiation in 30 min.The findings of the trapping experiments confirmed that•O2^–and h+were the important active species in the NO oxidation reaction.Meanwhile,the transient photocurrent response and PL spectroscopy analyses proved that the unique S-scheme structure of the samples could enhance the charge separation efficiency.In situ DRIFTS revealed that the photocatalytic reaction pathway of NO removal over the Sb2WO6/g-C3N4 nanocomposite occurred via an oxygen-induced route.The present work proposes a new concept for fabricating efficient photocatalysts for photocatalytic ppb-level NO oxidation and provides deeper insights into the mechanism of photocatalytic NO oxidation.
基金Project(05PJ14037) supported by Foundations of Pujiang Talented Person Plans of Shanghai Science and Technology Project(0519) supported by Shanghai-Applied Materials Research and Development Fund Project(0552nm042) supported by the Shanghai Science and Technology Committee
文摘Phase transformations in a Ge1Sb2Te4 system induced by a single femtosecond laser exposure were investigated. The system has a multilayer structure of air/10 nm ZnS–SiO2/80 nm Ge1Sb2Te4/80 nm ZnS–SiO2/0.6 mm polycarbonate substrate. The morphology and contrast of marks written in both amorphous and crystalline backgrounds by single femtosecond pulses were characterized using an optical microscope. X-ray diffraction (XRD) was applied to identify the crystal structures transformed by single 108 fs shots. The characteristics and the conditions of phase transitions in the multilayer structure triggered by single shots were investigated. The pulse energy window for the crystallization in the Ge1Sb2Te4 system was established. The mechanism of phase change triggered by 108 fs laser pulses was discussed.
基金supported by the National Natural Science Foundation of China(Grant No.12004347)the Scientific and Technological Project in Henan Province(Grant Nos.222102210063 and 232102320057)+2 种基金the Aeronautical Science Foundation of China(Grant Nos.2020Z073055002 and 2019ZF055002)the Innovation and Entrepreneurship Training Program for College Students(Grant Nos.202210485007 and 202210485044)the Graduate Education Innovation Program Foundation(Grant No.2022CX53).
文摘Metasurfaces have emerged as a flexible platform for shaping the electromagnetic field via the tailoring phase,amplitude,and polarization at will.However,the chromatic aberration inherited from building blocks’diffractive nature plagues them when used in many practical applications.Current solutions for eliminating chromatic aberration usually rely on searching through many meta-atoms to seek designs that satisfy both phase and phase dispersion preconditions,inevitably leading to intensive design efforts.Moreover,most schemes are commonly valid for incidence with a specific spin state.Here,inspired by the Rayleigh criterion for spot resolution,we present a design principle for broadband achromatic and polarization-insensitive metalenses using two sets of anisotropic nanofins based on phase change material Ge2Sb2Se4Te1.By limiting the rotation angles of all nanofins to either 0 deg or 90 deg,the metalens with a suitable numerical aperture constructed by this fashion allows for achromatic and polarization-insensitive performance across the wavelength range of 4–5μm,while maintaining high focusing efficiency and diffraction-limited performance.We also demonstrate the versatility of our approach by successfully implementing the generation of broadband achromatic and polarization-insensitive focusing optical vortex.This work represents a major advance in achromatic metalenses and may find more applications in compact and chip-scale devices.
