Doping modification is one of the most effective ways to optimize the thermoelectric properties of Bi_(2)Te_(3)-based alloys.P-type Bi_(2−x)Sb_(x)Te_(3) thermoelectric materials have been successfully prepared by dire...Doping modification is one of the most effective ways to optimize the thermoelectric properties of Bi_(2)Te_(3)-based alloys.P-type Bi_(2−x)Sb_(x)Te_(3) thermoelectric materials have been successfully prepared by direct Sb doping method.It can be found that doping Sb into Bi_(2)Te_(3) lattice array for Bi-site replacement facilitates the generation of Sb′Te anti-site defects.This anti-site defects can increase the hole concentration and optimize electrical transport properties of Bi_(2−x)Sb_(x)Te_(3) alloys.In addition,the point defects induced by mass and stress fluctuations and the Sb impurities produced during the sintering process can enhance the multi-scale phonon scattering and reduce the lattice thermal conductivity.As a result,the Bi_(0.47)Sb_(1.63)Te_(3) sample has a maximum thermoelectric figure of merit ZT of 1.04 at 350 K.It is worth noting that the bipolar effect of Bi_(2)Te_(3)-based alloys can be weakened with the increase of Sb content.The Bi_(0.44)Sb_(1.66)Te_(3) sample has a maximum average ZT value(0.93)in the temperature range of 300–500 K,indicating that direct doping of Sb can broaden the temperature range corresponding to the optimal ZT value.This work provides an idea for developing high-performance near room temperature thermoelectric materials with a wide temperature range.展开更多
In this work,the TiO_(2)/Sb_(2)S_(3) nanorod arrays(NRAs)were synthesized through a two-stage hydrothermal route for photoelectrochemical(PEC)water splitting.The effect of annealing treatment in Ar ambience on the PEC...In this work,the TiO_(2)/Sb_(2)S_(3) nanorod arrays(NRAs)were synthesized through a two-stage hydrothermal route for photoelectrochemical(PEC)water splitting.The effect of annealing treatment in Ar ambience on the PEC activity of TiO_(2)/Sb_(2)S_(3) composite sample was investigated by electrochemical impedance analysis,including Nyquist and Mott-Schottky(M-S)plots.It was demonstrated that vacuum annealing could crystallize Sb_(2)S_(3) component and change its color from red to black,leading to an increment of photocurrent density from 1.9 A/m^(2) to 4.25 A/m^(2) at 0 V versus saturated calomel electrode(VSCE).The enhanced PEC performance was mainly attributed to the improved visible light absorption.Moreover,annealing treatment facilitated retarding the electron-hole recombination occurred at the solid/liquid interfaces.Our work might provide a novel strategy for enhancing the PEC performance of a semiconductor electrode.展开更多
β-Ga_(2)O_(3)以其较高的导带底(Conduction Band Minimum,CBM)和较低的价带顶(Valence Band Maximum,VBM),赋予其光生电子和空穴较强的还原与氧化能力,但其宽禁带和高载流子复合率限制了在光催化中的应用.金属离子掺杂被认为是提升光...β-Ga_(2)O_(3)以其较高的导带底(Conduction Band Minimum,CBM)和较低的价带顶(Valence Band Maximum,VBM),赋予其光生电子和空穴较强的还原与氧化能力,但其宽禁带和高载流子复合率限制了在光催化中的应用.金属离子掺杂被认为是提升光催化性能的有效途径.本文基于第一性原理系统研究了Sr、Ba、V、Nb、Ta等二十种元素掺杂对β-Ga_(2)O_(3)光催化性能的影响,研究发现:Sr、Nb、Ta、Mn、Fe、Zn、Hg七种元素掺杂β-Ga_(2)O_(3)后,材料除能保持合适的带边位置外,还具有更高的电子空穴分离效率以及更低的形成能,表明这些元素的引入可有效提升β-Ga_(2)O_(3)光催化效率;Nb、Ta掺杂可显著增强材料在红外光区的吸收,Mn、Fe掺杂则显著提升材料在紫外和可见光区的吸收能力,其中,Nb在0.5 eV处光吸收系数高达1.38×10^(5)cm^(−1),Mn、Fe掺杂在3 eV处光吸收系数可达1×10^(5)cm^(−1),在不同波段均呈现出良好的光吸收能力.此外,Hg掺杂表现出跨红外至深紫外的宽波段增强效果,Hg掺杂后,电子空穴相对有效质量高达109,说明Hg掺杂显著提升载流子分离能力,同时由于其在宽波段显著增强的光吸收效果,因此,Hg可作为β-Ga_(2)O_(3)在光催化制氢中理想的金属掺杂元素,以上研究结果为β-Ga_(2)O_(3)光催化分解水制氢研究提供了价值参考.展开更多
基金supported by the Anhui Province Natural Science Foundation for Excellent Youth Scholars(2208085Y17)the University Synergy Innovation Program of Anhui Province(GXXT-2022-008+1 种基金GXXT-2021-022)the Anhui Key Lab of Metal Material and Processing Open Project.
文摘Doping modification is one of the most effective ways to optimize the thermoelectric properties of Bi_(2)Te_(3)-based alloys.P-type Bi_(2−x)Sb_(x)Te_(3) thermoelectric materials have been successfully prepared by direct Sb doping method.It can be found that doping Sb into Bi_(2)Te_(3) lattice array for Bi-site replacement facilitates the generation of Sb′Te anti-site defects.This anti-site defects can increase the hole concentration and optimize electrical transport properties of Bi_(2−x)Sb_(x)Te_(3) alloys.In addition,the point defects induced by mass and stress fluctuations and the Sb impurities produced during the sintering process can enhance the multi-scale phonon scattering and reduce the lattice thermal conductivity.As a result,the Bi_(0.47)Sb_(1.63)Te_(3) sample has a maximum thermoelectric figure of merit ZT of 1.04 at 350 K.It is worth noting that the bipolar effect of Bi_(2)Te_(3)-based alloys can be weakened with the increase of Sb content.The Bi_(0.44)Sb_(1.66)Te_(3) sample has a maximum average ZT value(0.93)in the temperature range of 300–500 K,indicating that direct doping of Sb can broaden the temperature range corresponding to the optimal ZT value.This work provides an idea for developing high-performance near room temperature thermoelectric materials with a wide temperature range.
基金supported by the Fundamental Research Funds for the Central Universities(No.2019ZDPY04).
文摘In this work,the TiO_(2)/Sb_(2)S_(3) nanorod arrays(NRAs)were synthesized through a two-stage hydrothermal route for photoelectrochemical(PEC)water splitting.The effect of annealing treatment in Ar ambience on the PEC activity of TiO_(2)/Sb_(2)S_(3) composite sample was investigated by electrochemical impedance analysis,including Nyquist and Mott-Schottky(M-S)plots.It was demonstrated that vacuum annealing could crystallize Sb_(2)S_(3) component and change its color from red to black,leading to an increment of photocurrent density from 1.9 A/m^(2) to 4.25 A/m^(2) at 0 V versus saturated calomel electrode(VSCE).The enhanced PEC performance was mainly attributed to the improved visible light absorption.Moreover,annealing treatment facilitated retarding the electron-hole recombination occurred at the solid/liquid interfaces.Our work might provide a novel strategy for enhancing the PEC performance of a semiconductor electrode.
文摘β-Ga_(2)O_(3)以其较高的导带底(Conduction Band Minimum,CBM)和较低的价带顶(Valence Band Maximum,VBM),赋予其光生电子和空穴较强的还原与氧化能力,但其宽禁带和高载流子复合率限制了在光催化中的应用.金属离子掺杂被认为是提升光催化性能的有效途径.本文基于第一性原理系统研究了Sr、Ba、V、Nb、Ta等二十种元素掺杂对β-Ga_(2)O_(3)光催化性能的影响,研究发现:Sr、Nb、Ta、Mn、Fe、Zn、Hg七种元素掺杂β-Ga_(2)O_(3)后,材料除能保持合适的带边位置外,还具有更高的电子空穴分离效率以及更低的形成能,表明这些元素的引入可有效提升β-Ga_(2)O_(3)光催化效率;Nb、Ta掺杂可显著增强材料在红外光区的吸收,Mn、Fe掺杂则显著提升材料在紫外和可见光区的吸收能力,其中,Nb在0.5 eV处光吸收系数高达1.38×10^(5)cm^(−1),Mn、Fe掺杂在3 eV处光吸收系数可达1×10^(5)cm^(−1),在不同波段均呈现出良好的光吸收能力.此外,Hg掺杂表现出跨红外至深紫外的宽波段增强效果,Hg掺杂后,电子空穴相对有效质量高达109,说明Hg掺杂显著提升载流子分离能力,同时由于其在宽波段显著增强的光吸收效果,因此,Hg可作为β-Ga_(2)O_(3)在光催化制氢中理想的金属掺杂元素,以上研究结果为β-Ga_(2)O_(3)光催化分解水制氢研究提供了价值参考.
