Sb-Ge chalcogenides are known as effective phase change materials,making them ideal for optical data storage applications,detectors,and sensors.However,there have been no photovoltaic devices developed using these mat...Sb-Ge chalcogenides are known as effective phase change materials,making them ideal for optical data storage applications,detectors,and sensors.However,there have been no photovoltaic devices developed using these materials to date.In this work,Sb-Ge-Se crystalline thin films with different[Sb]/[Ge]atomic ratios are successfully grown for the first time through the selenization of co-evaporated Sb and Ge layers.The impact of the Se addition and temperature during the selenization process on the composition,structural,morphological,vibrational,and optical properties of the Sb-Ge-Se layers is investigated.展开更多
为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻...为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻璃皮管。采用棒管法拉制出外径50±1.5μm、具有芯包结构的Ge-Sb-Se硫系玻璃光纤,光纤弯曲半径为5 mm,红外波段吸收基线为2.2 d B/m(2.87μm和4.5μm处除外)。展开更多
基金supported by ASSESS(TED2021-129666B-C21 and C22)project funded by MCIN/AEI/10.13039/501100011033by the“European Union Next Generation EU/PRTR”+5 种基金supported by the research project Inno PV(PID 2022-140226OB-C3)funded by MICIU/AEI/10.13039/501100011033 and by“FEDER/UE”by the research project 2DEn Light(PID2020-113415RBC21)funded by MICIU/AEI/10.13039/501100011033by SUNLIFE(PCI2024155033-2)project funded by MICIU/AEI/10.13039/501100011033/UEfunding from CM(project S2018/NMT-4291 TEC2SPACE)MINECO(project CSIC13-4E-1794)EU(FEDER,FSE)。
文摘Sb-Ge chalcogenides are known as effective phase change materials,making them ideal for optical data storage applications,detectors,and sensors.However,there have been no photovoltaic devices developed using these materials to date.In this work,Sb-Ge-Se crystalline thin films with different[Sb]/[Ge]atomic ratios are successfully grown for the first time through the selenization of co-evaporated Sb and Ge layers.The impact of the Se addition and temperature during the selenization process on the composition,structural,morphological,vibrational,and optical properties of the Sb-Ge-Se layers is investigated.
文摘为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻璃皮管。采用棒管法拉制出外径50±1.5μm、具有芯包结构的Ge-Sb-Se硫系玻璃光纤,光纤弯曲半径为5 mm,红外波段吸收基线为2.2 d B/m(2.87μm和4.5μm处除外)。
