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Selective growth of carbon nanotube on silicon substrates
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作者 邹小平 H.ABE +4 位作者 T.SHIMIZU A.ANDO H.TOKUMOTO 朱申敏 周豪慎 《中国有色金属学会会刊:英文版》 CSCD 2006年第B01期377-380,共4页
The carbon nanotube (CNT) growth of iron oxide-deposited trench-patterns and the locally-ordered CNT arrays on silicon substrate were achieved by simple thermal chemical vapor deposition(STCVD) of ethanol vapor. The C... The carbon nanotube (CNT) growth of iron oxide-deposited trench-patterns and the locally-ordered CNT arrays on silicon substrate were achieved by simple thermal chemical vapor deposition(STCVD) of ethanol vapor. The CNTs were uniformly synthesized with good selectivity on trench-patterned silicon substrates. This fabrication process is compatible with currently used semiconductor-processing technologies, and the carbon-nanotube fabrication process can be widely applied for the development of electronic devices using carbon-nanotube field emitters as cold cathodes and can revolutionize the area of field-emitting electronic devices. The site-selective growth of CNT from an iron oxide nanoparticle catalyst patterned were also achieved by drying-mediated self-assembly technique. The present method offers a simple and cost-effective method to grow carbon nanotubes with self-assembled patterns. 展开更多
关键词 carbon nanotubes silicon substrate stcvd trench-patterned locally-ordered pattern
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