The molecular beam epitaxial growth of high quality epilayers on （100） InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. ...The molecular beam epitaxial growth of high quality epilayers on （100） InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/（V · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.展开更多
利用新型全固源分子束外延技术 ,对 1 .5 5 μm波段的 In As P/ In Ga As P应变多量子阱结构的生长进行了研究。实验表明 ,较低的生长温度或较大的 / 束流比有利于提高应变多量子阱材料的结构质量 ,而生长温度对材料的光学特性有较...利用新型全固源分子束外延技术 ,对 1 .5 5 μm波段的 In As P/ In Ga As P应变多量子阱结构的生长进行了研究。实验表明 ,较低的生长温度或较大的 / 束流比有利于提高应变多量子阱材料的结构质量 ,而生长温度对材料的光学特性有较大的影响。在此基础上生长了分别限制多量子阱激光器结构 ,制作的氧化物条形宽接触激光器实现了室温脉冲工作 ,激射波长为 1 5 63 nm,阈值电流密度为 1 .4k A/ cm2 。这是国际上首次基于全固源分子束外延的 1 .5 5 μm波段 In As P/ In Ga As展开更多
The surface morphologies of InP epilayers grown by solid source molecular beam epitaxy at different growth temperatures and P/In flux ratios have been systematically studied by atomic force microscopy(AFM).The results...The surface morphologies of InP epilayers grown by solid source molecular beam epitaxy at different growth temperatures and P/In flux ratios have been systematically studied by atomic force microscopy(AFM).The results show that the remarkable variety of surface morphologies of samples is related to the transition of growth mode.Under a critical growth condition,a transition of growth mode is induced between a two-dimensional(2D)growth mode and a three-dimensional(3D)growth mode.On the basis of these results,a summary phased iagram is proposed for the growth mode of InP epilayers.Under the 2D growth region,high quality InP epilayers are obtained.展开更多
文摘The molecular beam epitaxial growth of high quality epilayers on （100） InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/（V · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.
文摘利用新型全固源分子束外延技术 ,对 1 .5 5 μm波段的 In As P/ In Ga As P应变多量子阱结构的生长进行了研究。实验表明 ,较低的生长温度或较大的 / 束流比有利于提高应变多量子阱材料的结构质量 ,而生长温度对材料的光学特性有较大的影响。在此基础上生长了分别限制多量子阱激光器结构 ,制作的氧化物条形宽接触激光器实现了室温脉冲工作 ,激射波长为 1 5 63 nm,阈值电流密度为 1 .4k A/ cm2 。这是国际上首次基于全固源分子束外延的 1 .5 5 μm波段 In As P/ In Ga As
文摘The surface morphologies of InP epilayers grown by solid source molecular beam epitaxy at different growth temperatures and P/In flux ratios have been systematically studied by atomic force microscopy(AFM).The results show that the remarkable variety of surface morphologies of samples is related to the transition of growth mode.Under a critical growth condition,a transition of growth mode is induced between a two-dimensional(2D)growth mode and a three-dimensional(3D)growth mode.On the basis of these results,a summary phased iagram is proposed for the growth mode of InP epilayers.Under the 2D growth region,high quality InP epilayers are obtained.
