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Single event upset induced multi-block error and its mitigation strategy for SRAM-based FPGA 被引量:5
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作者 XING KeFei YANG JianWei +1 位作者 ZHANG ChuangSheng HE Wei 《Science China(Technological Sciences)》 SCIE EI CAS 2011年第10期2657-2664,共8页
According to the SRAM-based FPGA's single event effect problem in space application,single event upset induced multi-block error(SEU-MBE) phenomenon and its mitigation strategy are studied in the paper.After analy... According to the SRAM-based FPGA's single event effect problem in space application,single event upset induced multi-block error(SEU-MBE) phenomenon and its mitigation strategy are studied in the paper.After analyzing the place and route result,the paper points out that the essence of SEU-MBE is that some important modules exceed the safe internal distance.Two approaches,area constraint method(ACM) and incremental route algorithm(IRA),are proposed,which can reduce the error rate by manipulating programmable switch matrix and interconnection points within FPGA route resource.Fault injection experiments indicate that error detection rate is above 98.6% for both strategies,and FPGA resources increment and performance penalty are around 10%. 展开更多
关键词 sram-based FPGA single event upset induced multi-block error place and route
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SRAM-Based FPGA Systems for Safety-Critical Applications: A Survey on Design Standards and Proposed Methodologies 被引量:2
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作者 Cinzia Bernardeschi Luca Cassano Andrea Domenici 《Journal of Computer Science & Technology》 SCIE EI CSCD 2015年第2期373-390,共18页
As the ASIC design cost becomes affordable only for very large-scale productions, the FPGA technology is currently becoming the leading technology for those applications that require a small-scale production. FPGAs ca... As the ASIC design cost becomes affordable only for very large-scale productions, the FPGA technology is currently becoming the leading technology for those applications that require a small-scale production. FPGAs can be considered as a technology crossing between hardware and software. Only a small-number of standards for the design of safety-critical systems give guidelines and recommendations that take the peculiarities of the FPGA technology into consideration. The main contribution of this paper is an overview of the existing design standards that regulate the design and verification of FPCA-based systems in safety-critical application fields. Moreover, the paper proposes a survey of significant published research proposals and existing industrial guidelines about the topic, and collects and reports about some lessons learned from industrial and research projects involving the use of FPGA devices. 展开更多
关键词 design verification electronic design safety-critical system sram-based FPGA
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A software solution to estimate the SEU-induced soft error rate for systems implemented on SRAM-based FPGAs
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作者 王忠明 姚志斌 +1 位作者 郭红霞 吕敏 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第5期117-123,共7页
SRAM-based FPGAs are very susceptible to radiation-induced Single-Event Upsets (SEUs) in space applications. The failure mechanism in FPGA's configuration memory differs from those in traditional memory device. As ... SRAM-based FPGAs are very susceptible to radiation-induced Single-Event Upsets (SEUs) in space applications. The failure mechanism in FPGA's configuration memory differs from those in traditional memory device. As a result, there is a growing demand for methodologies which could quantitatively evaluate the impact of this effect. Fault injection appears to meet such requirement. In this paper, we propose a new methodology to analyze the soft errors in SRAM-based FPGAs. This method is based on in depth understanding of the device architecture and failure mechanisms induced by configuration upsets. The developed programs read in the placed and routed netlist, search for critical logic nodes and paths that may destroy the circuit topological structure, and then query a database storing the decoded relationship of the configurable resources and corresponding control bit to get the sensitive bits. Accelerator irradiation test and fault injection experiments were carried out to validate this approach. 展开更多
关键词 radiation effect single-event effect sram-based FPGAs fault injection
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Total dose ionizing irradiation effects on a static random access memory field programmable gate array
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作者 高博 余学峰 +5 位作者 任迪远 李豫东 孙静 崔江维 王义元 李明 《Journal of Semiconductors》 EI CAS CSCD 2012年第3期42-47,共6页
SRAM-based FPGA devices are irradiated by ^(60)Coγrays at various aose rates 10 investigate total dose effects and the evaluation method.The dependences of typical electrical parameters such as static power current... SRAM-based FPGA devices are irradiated by ^(60)Coγrays at various aose rates 10 investigate total dose effects and the evaluation method.The dependences of typical electrical parameters such as static power current, peak-peak value,and delay time on total dose are discussed.The experiment results show that the static power current of the devices reduces rapidly at room temperature(25℃) and high temperature(80℃) annealing after irradiation.When the device is irradiated at a low dose rate,the delay time and peak-peak value change unobviously with an increase in the accumulated dose.In contrast,the function parameters completely fail at 2.1 kGy(Si) when the dose rate increases to 0.71 Gy(Si)/s. 展开更多
关键词 sram-based FPGA γ-^(60)Co ionizing irradiation effects evaluation methods
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