负荷开关和断路器的配合使用已广泛应用于配电网中,而精确检测和处理非接地系统中的接地故障是配电系统的一个重要课题。介绍了高性能的SOG(storage over current ground)智能型线路保护开关的原理、特点和功能,进一步阐述其与上级变电...负荷开关和断路器的配合使用已广泛应用于配电网中,而精确检测和处理非接地系统中的接地故障是配电系统的一个重要课题。介绍了高性能的SOG(storage over current ground)智能型线路保护开关的原理、特点和功能,进一步阐述其与上级变电所断路器的配合应用,实践证明SOG在配网中发挥重要作用,具有良好的应用前景。展开更多
Protein O-GlcNAcylation is a monosaccharide post-translational modification maintained by two evolutionarily conserved enzymes, O-GlcNAc transferase (OGT) and O-GlcNAcase (OGA). Mutations in human OGT have recently be...Protein O-GlcNAcylation is a monosaccharide post-translational modification maintained by two evolutionarily conserved enzymes, O-GlcNAc transferase (OGT) and O-GlcNAcase (OGA). Mutations in human OGT have recently been associated with neurodevelopmental disorders, although the mechanisms linking O-GlcNAc homeostasis to neurodevelopment are not understood. Here, we investigate the effects of perturbing protein O-GlcNAcylation using transgenic Drosophila lines that overexpress a highly active OGA. We reveal that temporal reduction of protein O-GlcNAcylation in early embryos leads to reduced brain size and olfactory learning in adult Drosophila. Downregulation of O-GlcNAcylation induced by the exogenous OGA activity promotes nuclear foci formation of Polycomb-group protein Polyhomeotic and the accumulation of excess K27 trimethylation of histone H3 (H3K27me3) at the mid-blastula transition. These changes interfere with the zygotic expression of several neurodevelopmental genes, particularly short gastrulation (sog), a component of an evolutionarily conserved sog-Decapentaplegic (Dpp) signaling system required for neuroectoderm specification. Our findings highlight the importance of early embryonic O-GlcNAcylation homeostasis for the fidelity of facultative heterochromatin redeployment and initial cell fate commitment of neuronal lineages, suggesting a possible mechanism underpinning OGT-associated intellectual disability.展开更多
The silicon on glasses process is a common preparation method of micro-electro-mechanical system inertial devices,which can realize the processing of thick silicon structures.This paper proposes that indium tin oxides...The silicon on glasses process is a common preparation method of micro-electro-mechanical system inertial devices,which can realize the processing of thick silicon structures.This paper proposes that indium tin oxides(ITO)film can serve as a deep silicon etching cut-off layer because ITO is less damaged under the attack of fluoride ions.ITO has good electrical conductivity and can absorb fluoride ions for silicon etching and reduce the reflection of fluoride ions,thus reducing the foot effect.The removal and release of ITO use an acidic solution,which does not damage the silicon structure.Therefore,the selection of the sacrificial layer has an excellent effect in maintaining the shape of the MEMS structure.This method is used in the preparation of MEMS accelerometers with a structure thickness of 100μm and a feature size of 4μm.The over-etching of the bottom of the silicon structure caused by the foot effect is negligible.The difference between the simulated value and the designed value of the device characteristic frequency is less than 5%.This indicates that ITO is an excellent deep silicon etch stopper material.展开更多
In the second half of August of 2011,we took a unique journey over three days along the route from Nagqu,via Sog,to Driru and then on to the four counties on the eastern side of Nagqu Prefecture. Lodro,the local cultu...In the second half of August of 2011,we took a unique journey over three days along the route from Nagqu,via Sog,to Driru and then on to the four counties on the eastern side of Nagqu Prefecture. Lodro,the local culture expert,was accompanying us and feeding us information about the landscape,cultural matters and local resources.Our first stop was the well-known Sogtsanden Monastery,a miniature of the展开更多
文摘负荷开关和断路器的配合使用已广泛应用于配电网中,而精确检测和处理非接地系统中的接地故障是配电系统的一个重要课题。介绍了高性能的SOG(storage over current ground)智能型线路保护开关的原理、特点和功能,进一步阐述其与上级变电所断路器的配合应用,实践证明SOG在配网中发挥重要作用,具有良好的应用前景。
基金This project has been supported by the National Natural Science Foundation of China(grants 91853108,92153301,31771589,and 32170821 to K.Y,32101034 to F.C)Department of Science and Technology of Hunan Province(grants 2017RS3013,2017XK2011,2018DK2015,2019SK1012,and 2021JJ10054 to K.Y,and the innovative team program 2019RS1010)+2 种基金Central South University(2018CX032 to K.Y,2019zzts046 to Y.Z,2019zzts339 to X.L,2021zzts497 to H.Y,and the innovation-driven team project 2020CX016)D.M.F.v.A.is supported by Wellcome Trust Investigator Award(110061)a Novo Nordisk Foundation Laureate award(NNF21OC0065969).
文摘Protein O-GlcNAcylation is a monosaccharide post-translational modification maintained by two evolutionarily conserved enzymes, O-GlcNAc transferase (OGT) and O-GlcNAcase (OGA). Mutations in human OGT have recently been associated with neurodevelopmental disorders, although the mechanisms linking O-GlcNAc homeostasis to neurodevelopment are not understood. Here, we investigate the effects of perturbing protein O-GlcNAcylation using transgenic Drosophila lines that overexpress a highly active OGA. We reveal that temporal reduction of protein O-GlcNAcylation in early embryos leads to reduced brain size and olfactory learning in adult Drosophila. Downregulation of O-GlcNAcylation induced by the exogenous OGA activity promotes nuclear foci formation of Polycomb-group protein Polyhomeotic and the accumulation of excess K27 trimethylation of histone H3 (H3K27me3) at the mid-blastula transition. These changes interfere with the zygotic expression of several neurodevelopmental genes, particularly short gastrulation (sog), a component of an evolutionarily conserved sog-Decapentaplegic (Dpp) signaling system required for neuroectoderm specification. Our findings highlight the importance of early embryonic O-GlcNAcylation homeostasis for the fidelity of facultative heterochromatin redeployment and initial cell fate commitment of neuronal lineages, suggesting a possible mechanism underpinning OGT-associated intellectual disability.
基金the Laboratory Open Fund of Beijing Smart-chip Microelectronics Technology Co.,Ltd and Chinese National Science Foundation(Contract No.52075519 and 61974136).
文摘The silicon on glasses process is a common preparation method of micro-electro-mechanical system inertial devices,which can realize the processing of thick silicon structures.This paper proposes that indium tin oxides(ITO)film can serve as a deep silicon etching cut-off layer because ITO is less damaged under the attack of fluoride ions.ITO has good electrical conductivity and can absorb fluoride ions for silicon etching and reduce the reflection of fluoride ions,thus reducing the foot effect.The removal and release of ITO use an acidic solution,which does not damage the silicon structure.Therefore,the selection of the sacrificial layer has an excellent effect in maintaining the shape of the MEMS structure.This method is used in the preparation of MEMS accelerometers with a structure thickness of 100μm and a feature size of 4μm.The over-etching of the bottom of the silicon structure caused by the foot effect is negligible.The difference between the simulated value and the designed value of the device characteristic frequency is less than 5%.This indicates that ITO is an excellent deep silicon etch stopper material.
文摘In the second half of August of 2011,we took a unique journey over three days along the route from Nagqu,via Sog,to Driru and then on to the four counties on the eastern side of Nagqu Prefecture. Lodro,the local culture expert,was accompanying us and feeding us information about the landscape,cultural matters and local resources.Our first stop was the well-known Sogtsanden Monastery,a miniature of the
