A sampled grating distributed Bragg reflector(SG-DBR)laser monolithically integrated with semiconductor optical amplifiers(SOAs),which has a tuning range over 43nm from 1514.05 nm to 1557.4 nm covering 49 continuous a...A sampled grating distributed Bragg reflector(SG-DBR)laser monolithically integrated with semiconductor optical amplifiers(SOAs),which has a tuning range over 43nm from 1514.05 nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 mW for all output wavelengths,is successfully demonstrated.展开更多
Silicon photonics(SiPh)technology has become a key platform for developing photonic integrated circuits due to its CMOS compatibility and scalable manufacturing.However,integrating efficient on-chip optical sources an...Silicon photonics(SiPh)technology has become a key platform for developing photonic integrated circuits due to its CMOS compatibility and scalable manufacturing.However,integrating efficient on-chip optical sources and in-line amplifiers remains challenging due to silicon’s indirect bandgap.In this study,we developed prefabricated standardized InAs/GaAs quantum-dot(QD)active devices optimized for micro-transfer printing and successfully integrated them on SiPh integrated circuits.By transfer-printing standardized QD devices onto specific regions of the SiPh chip,we realized O-band semiconductor optical amplifiers(SOAs),distributed feedback(DFB)lasers,and widely tunable lasers(TLs).The SOAs reached an on-chip gain of 7.5 dB at 1299 nm and maintained stable performance across a wide input power range.The integrated DFB lasers achieved waveguide(WG)-coupled output powers of up to 19.7 mW,with a side-mode suppression ratio(SMSR)of 33.3 dB,and demonstrated notable robustness against optical feedback,supporting error-free data rates of 30 Gbps without additional isolators.Meanwhile,the TLs demonstrated a wavelength tuning range exceeding 35 nm,and a WG-coupled output power greater than 3 m W.The micro-transfer printing approach effectively decouples the fabrication of non-native devices from the SiPh process,allowing back-end integration of the Ⅲ–Ⅴ devices.Our approach offers a viable path toward fully integrated Ⅲ–Ⅴ/ SiPh platforms capable of supporting high-speed,high-capacity communication.展开更多
Wavelength conversion based on the cross-gain modulation (XGM) in a traveling-wave type semiconductor optical amplifier (TW-SOA) using assist light is theoretically studied. Taking into account the spatial and tempora...Wavelength conversion based on the cross-gain modulation (XGM) in a traveling-wave type semiconductor optical amplifier (TW-SOA) using assist light is theoretically studied. Taking into account the spatial and temporal variations of carrier density along the SOA length, the dependency of the conversion response on the assist light conditions is simulated both for co- and counter-propagating assist light schemes.展开更多
基金Supported by the National High-Tech Research and Development Program of China under Grant NoS 2006AA01Z256,2007AA03Z419 and 2007AA03Z417the National Basic Research Program of China under Grant Nos 2006CB604901 and 2006CB604902the National Natural Science Foundation of China under Grant Nos 90401025,60736036,60706009 and 60777021。
文摘A sampled grating distributed Bragg reflector(SG-DBR)laser monolithically integrated with semiconductor optical amplifiers(SOAs),which has a tuning range over 43nm from 1514.05 nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 mW for all output wavelengths,is successfully demonstrated.
基金European Union(CALADAN)(825453)Dutch Growth Fund PhotonDelta project。
文摘Silicon photonics(SiPh)technology has become a key platform for developing photonic integrated circuits due to its CMOS compatibility and scalable manufacturing.However,integrating efficient on-chip optical sources and in-line amplifiers remains challenging due to silicon’s indirect bandgap.In this study,we developed prefabricated standardized InAs/GaAs quantum-dot(QD)active devices optimized for micro-transfer printing and successfully integrated them on SiPh integrated circuits.By transfer-printing standardized QD devices onto specific regions of the SiPh chip,we realized O-band semiconductor optical amplifiers(SOAs),distributed feedback(DFB)lasers,and widely tunable lasers(TLs).The SOAs reached an on-chip gain of 7.5 dB at 1299 nm and maintained stable performance across a wide input power range.The integrated DFB lasers achieved waveguide(WG)-coupled output powers of up to 19.7 mW,with a side-mode suppression ratio(SMSR)of 33.3 dB,and demonstrated notable robustness against optical feedback,supporting error-free data rates of 30 Gbps without additional isolators.Meanwhile,the TLs demonstrated a wavelength tuning range exceeding 35 nm,and a WG-coupled output power greater than 3 m W.The micro-transfer printing approach effectively decouples the fabrication of non-native devices from the SiPh process,allowing back-end integration of the Ⅲ–Ⅴ devices.Our approach offers a viable path toward fully integrated Ⅲ–Ⅴ/ SiPh platforms capable of supporting high-speed,high-capacity communication.
文摘Wavelength conversion based on the cross-gain modulation (XGM) in a traveling-wave type semiconductor optical amplifier (TW-SOA) using assist light is theoretically studied. Taking into account the spatial and temporal variations of carrier density along the SOA length, the dependency of the conversion response on the assist light conditions is simulated both for co- and counter-propagating assist light schemes.
