A physical model for simulating plasmonic solar cells (SCs) using the SILVACO TCAD simulator is establisled and the effects of some factors on the efficiency enhancement of the amorphous silicon thin film SCs are simu...A physical model for simulating plasmonic solar cells (SCs) using the SILVACO TCAD simulator is establisled and the effects of some factors on the efficiency enhancement of the amorphous silicon thin film SCs are simulated.Through this simulation,it is demonstrated that our method can successfully simulate the optical and electrical properties of plasmonic solar cells without the overestimation of the characteristics and without the neglect of parameter change in the device operation process.It is shown that not only the size and kind of metal nanoparticles but also other factors,such as the surrounding medium,the distance from the bottom of particles to the device surface,and the light incident angle,play important roles in the optical and electrical properties of plasmonic SCs.展开更多
Metal-ferroelectric-insulator-silicon(MFIS) capacitors with Bi3.15Nd0.85Ti3O12(BNT) ferroelectric thin film were simulated using a commercial software Silvaco/Atlas,and the effects of applied voltage and insulator lay...Metal-ferroelectric-insulator-silicon(MFIS) capacitors with Bi3.15Nd0.85Ti3O12(BNT) ferroelectric thin film were simulated using a commercial software Silvaco/Atlas,and the effects of applied voltage and insulator layer on capacitance-voltage(C-V) hysteresis loops and memory windows were investigated. For the MFIS capacitors with CeO2 insulator,with the increase of applied voltage from 2 V to 15 V,the C-V loops become wider and memory windows increase from 0.15 V to 1.27 V. When the thickness of CeO2 layer increases from 1 nm to 5 nm at the applied voltage of 5 V,the C-V loops become narrower and the memory windows decrease from 1.09 V to 0.36 V. For MFIS capacitors with different insulator layers(CeO2,HfO2,Y2O3,Si3N4 and SiO2),the high dielectric constants can make the C-V loops wider and improve the capacitor's memory window. The simulation results prove that Silvaco/Atlas is a powerful simulator for MFIS capacitor,and they are helpful to the fabrication of MFIS nonvolatile memory devices.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 6177055.
文摘A physical model for simulating plasmonic solar cells (SCs) using the SILVACO TCAD simulator is establisled and the effects of some factors on the efficiency enhancement of the amorphous silicon thin film SCs are simulated.Through this simulation,it is demonstrated that our method can successfully simulate the optical and electrical properties of plasmonic solar cells without the overestimation of the characteristics and without the neglect of parameter change in the device operation process.It is shown that not only the size and kind of metal nanoparticles but also other factors,such as the surrounding medium,the distance from the bottom of particles to the device surface,and the light incident angle,play important roles in the optical and electrical properties of plasmonic SCs.
基金Projects (10472099,0672139) supported by the National Natural Science Foundation of ChinaProject (207079) supported by Key Project of Ministry of Education of China+1 种基金Project (05FJ2005) supported by Key Project of Scientific and Technological Department of Hunan ProvinceProject(06A072) supported by Key Project of Education Department of Hunan Province
文摘Metal-ferroelectric-insulator-silicon(MFIS) capacitors with Bi3.15Nd0.85Ti3O12(BNT) ferroelectric thin film were simulated using a commercial software Silvaco/Atlas,and the effects of applied voltage and insulator layer on capacitance-voltage(C-V) hysteresis loops and memory windows were investigated. For the MFIS capacitors with CeO2 insulator,with the increase of applied voltage from 2 V to 15 V,the C-V loops become wider and memory windows increase from 0.15 V to 1.27 V. When the thickness of CeO2 layer increases from 1 nm to 5 nm at the applied voltage of 5 V,the C-V loops become narrower and the memory windows decrease from 1.09 V to 0.36 V. For MFIS capacitors with different insulator layers(CeO2,HfO2,Y2O3,Si3N4 and SiO2),the high dielectric constants can make the C-V loops wider and improve the capacitor's memory window. The simulation results prove that Silvaco/Atlas is a powerful simulator for MFIS capacitor,and they are helpful to the fabrication of MFIS nonvolatile memory devices.
